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Part Manufacturer Description Datasheet Download Buy Part
D2-74083-LR Intersil Corporation Intelligent Digital Amplifier and Sound Processor; LQFP128; Temp Range: 0° to 70°
EL5237IYZ-T7 Intersil Corporation Dual Ultra Low Noise Wideband Amplifiers; MSOP10; Temp Range: -40° to 85°C
EL8172FSZ-T7A Intersil Corporation Micropower, Single Supply, Rail-to-Rail Input-Output Instrumentation Amplifiers; SOIC8; Temp Range: -40° to 125°C
HIP4086AABZ Intersil Corporation 80V, 500mA, 3-Phase MOSFET Driver; SOIC24; Temp Range: -40° to 105°C
ISL23318TFRUZ-TK Intersil Corporation Single, 128-taps Low Voltage Digitally Controlled Potentiometer (XDCP™); MSOP10, uTQFN10; Temp Range: -40° to 125°C
ISL23318WFRUZ-TK Intersil Corporation Single, 128-taps Low Voltage Digitally Controlled Potentiometer (XDCP™); MSOP10, uTQFN10; Temp Range: -40° to 125°C

Harris 721 Datasheets Context Search

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1997 - zero crossing detector

Abstract: telephone ring generator circuit HC-5502A phase sequence detector zero crossing HC5502A AC Zero detector HC-5504 zero crossing three signals RING GENERATOR
Text: to thank Geoff Philliips for his contribution to this paper. 7-21 Harris Semiconductor , Harris Semiconductor No. AN571.1 Harris Linear January 1997 Using Ring Sync with HC-5502A and HC-5504 SLICs Author: Dave Donovan Introduction The ring synchronization (sync) input pin is , usually an 80VRMS, 20Hz signal. For use with the Harris SLIC, the ring signal should not exceed 150V , through the Copyright © Harris Corporation 1997 7-20 FIGURE 1. RING TRIP SEQUENCE


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PDF AN571 HC-5502A HC-5504 HC-5504, zero crossing detector telephone ring generator circuit phase sequence detector zero crossing HC5502A AC Zero detector zero crossing three signals RING GENERATOR
HMF-03100-200

Abstract: Harris 721
Text: HARRIS niil SEMICONDUCTOR MbE J> HSOESb'i D 0 0 0 n 3 7 J Ê HNS JE HARRIS PRODUCT DATA Features · +19 dBm Output Power with 8.5 dB Associated Gain at 8 GHz H M F -0 3 , with 0.5 nm gate length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac , -03110-200 suit able for the most demanding applications. The chip devices are selected from Harris Microwave , w S O U RCE DRAIN 0.51 (0.02) TYP Dimensions in millimeters (inches) 3-9 HARRIS


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PDF HMF-03110-200 HMF03100-200. HMF-03100-200 Harris 721
Harris 721

Abstract: RURM1610CC RURM1615CC RURM1620CC
Text: HARRIS SEMICOND SECTOR bflE » ■M3DEE71 DDSOMÖ1 721 «HAS Specifications RURM1610CC, RURM1615CC ,  HARRIS SEMCONI SECTOR bSE H ■1302271 PPSDM8Q SIS HHAS HARRIS RURM1610CC SEUIC0N0UCT0R RURM1615CC, RURM1620CC December 1993 16A ,100V - 200V Ultrafast Dual Diodes Features Package • Ultrafast Recovery Time JEDEC TO-204AA (tRR < 35ns) BOTTOM VIEW • Low Forward Voltage CATHODE • Low Thermal Resistance ANODE 1 / / (FLANGE) • Planar Design • Wire-Bonded Construction (o o


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PDF RURM1610CC RURM1615CC, RURM1620CC O-204AA 100kHz RURM1610CC, RURM1620CC Harris 721 RURM1610CC RURM1615CC
1998 - Not Available

Abstract: No abstract text available
Text: Integrated Protection Circuit Overview The Harris SP Series is comprised of Silicon Integrated Circuit Arrays of SCR/Diode structures. These devices have been designed and developed to withstand extreme ESD conditions, enabling them to protect other Silicon devices on data, signal and control lines , , the SP720, 721 and 723 are designed for the circuit board-level, working up to 35VDC. These devices , Available in both surface mount and through-hole packages. 6-2 Harris Semiconductor


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PDF SP720, 35VDC. SP72X
1996 - CA3039

Abstract: diode 1334 1334 diode harris 721 CA3039M CA3039M96
Text: DS D6 2 NC 6 7 D1 3 D2 © Harris Corporation 1996 D1 9 DS 8 5 9 NC , REVERSE VOLTAGE All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris , . Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights


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PDF CA3039 CA3039 1-800-4-HARRIS diode 1334 1334 diode harris 721 CA3039M CA3039M96
vp 3082

Abstract: CA3081 CA3081 HARRIS HARRIS 3081 CA3082 harris 723
Text: HARRIS SEfllCOND SECTOR MOE D Ei 4302271 00322=12 b I T - '4 3 -Z 5 (fj HARRIS C il3 0 S 1 CA3082 General-Purpose High-Current N-P-N Transistor Arrays Description , electrostatic discharge. Proper t.C. handling procedures should be followed. Copyright © Harris Corporation 1991 Rie Number 480.1 7-21 HA RRI S SEMICOND SECTOR MOE D Bi 4302271 00322=13 ö , 4 4 - 0.4 0.4 - =0 7-22 HARRIS SEMICOND SECTOR 40E D m 43DE271 3


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PDF CA3082 CA3081 CA3082 100mA) vp 3082 CA3081 HARRIS HARRIS 3081 harris 723
Not Available

Abstract: No abstract text available
Text: HARRIS Hl i ) SEMICONDUCTOR 4bE D 43022^ 00D0213 T HMS 1 = 3 1 -3 0 SI ( HARRIS PRODUCT DATA Features H M F -0 6 14 0 2 0 0 Gain Optimized GaAs FET 2-14 GHz * Chip Devices , length, utilizing Harris Microwave's gain optimized G10 process. The HMF-06100-200 ac tive layer is , able for the most demanding applications. The chip devices are selected from Harris Microwave , absolute maximum ratings. Refer to Application Note 201 for assembly recommendations. 3-30 HARRIS


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PDF 00D0213 HMF-06140-200 HMF06100-200.
VP 1176

Abstract: HMF-06100-200 HMF06100-200
Text: SAMSUNG ELECTRONICS INC bOE D 7=^4142 D011A71 4 ti b SflGK SI HARRIS PRODUCT DATA Features HM F-06140 Chip Devices are Selected from Standard Military Grade Wafers , length, utilizing Harris Microwave's gain optimized G10 process. The HMF-06100-200 ac tive layer is , able for the most demanding applications. The chip devices are selected from Harris Microwave , S 12 MAG .900 .837 .798 .780 .766 .746 .739 .754 .733 .774 .758 .722 .683 ANG - 72.1 -99.2


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PDF D011A71 F-06140 HMF-06140-200 HMF06100-200. VP 1176 HMF-06100-200 HMF06100-200
1999 - Not Available

Abstract: No abstract text available
Text: + A CATHODE ANODE G K G G - K - K 7-19 1-800-4- HARRIS or 407-727-9207 | Copyright © Harris Corporation 1999 SGT27S10, SGT27S23 Absolute Maximum Ratings TC = 25oC SGT27S10 SGT27S23 , off-state current that results from the application of the maximum offstate voltage (VDM). 7-21 IRM (Reverse , B: Bidirectional S: SCR Off-State Voltage Rating Divided by 10 Surgector All Harris semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris


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PDF SGT27S10, SGT27S23 O-202 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: fil HARRIS OCT i 3 H 15812 SEMI CON D U CT OR CMOS 12-Bit Sampling A/D Converter with , Procedures. Copyright © Harris Corporation 1992 1 File Number 3214.1 < s > *= > < % , dB dB K fs = Internal Clock, f|N = 1kHz fs = 750kHz, fIN= 1kHz 71.5 72.1 dB dB , SAMPLING RATE = 50kHz SNR = 72.1 dB SINAD = 71.4dB EFFECTIVE BITS = 11.5 THD = -79.1 dBc PEAK NOISE = , : 0.014 0.019 I 0.093 1 0.104 0.004 0.011 14 HI5812 Harris Semiconductor products are


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PDF 12-Bit HI5812 50KSPS 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: HARRIS M i l ) SEMICONDUCTOR 4bE D MBDESbR GDODIT? 4 «HMS T ~ 3 I^ S ~ - ® HARRIS PRODUCT DATA Features * +19 dBm Output Power with 9.5 dB Associated Gain at 8 GHz * 14 dB MAG , length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac tive layer is , able for the most demanding applications. The chip devices are selected from Harris Microwave , absolute maximum ratings Refer to Application Note 201 for assembly recommendations. 3-14 HARRIS


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PDF F-03140-200 noftheHMF03100-200. Harr15
rca 632

Abstract: 3vf5 rca 807 r rca 631
Text: 3.3* 5t 1.5 3.3 5 1.5 3.3 5 - - HARRIS SE" IC< > N ]> s e c t o r ~C -bl-Z\*S £, -55 to +125°C , Logic ICs ~ HARRIS SEMICOND SECTOR CD54AC139/3A CD54ACT139/3A T -fe l-a h S T ACT INPUT LOADING , HARRIS SEHICOND SECTOR CD54AC139/3A CD54ACT139/3A Vcc (V) 1.5 3.3* 5t 1.5 3.3 5 - - `T "-t7 -Z l-5 5 T - h 7-21 -sv -55 to +125°C MIN. 4.4 3.2 1.9 1.6 83 Typ. 10 MAX. 131 14.7 10.5» 131 14.7 10.5


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PDF 43DH271 002bl07 CD54AC138/3A CD54ACT138/3A CD54AC151/3A CD54ACT151 CD54ACT151/3A rca 632 3vf5 rca 807 r rca 631
Not Available

Abstract: No abstract text available
Text: Systems Packaging MODIFIED TO-202 Equivalent Schematic Symbols 1«800-4- HARRIS or 407*727*9207 I Copyright © Harris Corporation 1999 SURGECTOR PRODUCTS SGT27S10, SGT27S23 Absolute Maximum Ratings t , application of the maximum offstate voltage (Vqm) 7-21 I rm (Reverse Current) - Maximum value of reverse


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PDF SGT27S10, SGT27S23 T0-202 100inches 54min
Not Available

Abstract: No abstract text available
Text: C 13 □ Y2 3 12 □ D2 C1 The Harris HCTS4002MS is a Radiation Hardened , +125°C Harris Class S Equivalent 14 Lead SBDIP Harris Class S Equivalent 14 Lead Ceram ic , opyright © Harris C orporation 1995 _ . _ Spec Number File Number 518632 3075.1 , FN test which will be performed 100% Go/No-Go. Spec Number 721 518632 Specifications , /wafer 0 failures. Spec Number 722 518632 HCTS4002MS Harris Space Level Product Flow -


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PDF HCTS4002MS IL-STD-1835 CDIP2-T14
harris 723

Abstract: samsung 1622
Text: SAMSUNG ELECTRONICS INC bOE D 7^4145 GDllñSfi TSS «SMGK HARRIS PRODUCT DATA Features · +19 dBm Output Power with 9.5 dB Associated Gain at 8 GHz H M F - 0 , with 0.5 urn gate length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac , -03140-200 suit able for the most demanding applications. The chip devices are selected from Harris Microwave , 8.87 8.61 8.11 7.21 6.10 5.36 4.80 4.22 3.11 2.38 1.80 MAG 3.091 2.901 2.776 2.696 2.544 2.294 2.019


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PDF F-03140-200 F03100-200. harris 723 samsung 1622
Not Available

Abstract: No abstract text available
Text: electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright © Harris Corporation , dB fs = Internal Clock, f,N = 1kHz fs = 750kHz, fIN= 1kHz 71.5 72.1 dB dB fs Signal , SAMPUNG RATE = 50kHz SNR = 72.1 dB SINAD = 71.4dB EFFECTIVE BITS s 11.5 THD = -79.1 dBc PEAK NOISE = , 0.093 J_0.104 0.014 M 0.019 0.004 0.011 14 HI5812 Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit


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PDF HI5812 12-bit 50KSPS
Not Available

Abstract: No abstract text available
Text: HARRIS SEfllCOND SECTOR Read-Only Memories (ROMs) - 37E D 4302271 DD23721 2 B H A S T , 323 5 G- l 0 I HARRIS SEMICOND SECTOR _ 37E D , activity, chip disabled. ·*TTL Inputs. ·CMOS inputs. 719 3236 G- ll HARRIS SEMICOND SECTOR , . 2 - T im in g w a v e fo rm s . 7 2 0 _ 323 7 G-l 2 HARRIS , recommended between the V do and Vss pins of every ROM device. 3238 G- 13 721


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PDF DD23721 CDM53128 384-Word 28-pin CDM53128
54HC

Abstract: CD54HC137
Text: High-Reliability High-Speed CMOS Logic ICs_ CD54HC132/3A CD54HCT132/3A 37E » 4302271 002506? 2 IHAS HARRIS SEMICOND SECTOR HCT INPUT LOADING TABLE INPUT UNIT LOAD' nA, nB 0.6 T-3KLI 'Unit load is Alec limit specified in Static Characteristics Chart, e.g., 360 ¡lhmax. @ 25 , ■HAS^High-Reliability High-Speed CMOS Logic ICs HARRIS SEMICOND SECTOR CD54HC137/3A CD54HCT137/3A Static Electrical Characteristics (Limits with biack dots (.> are tested 100%) & 7-2-1 -SS TEST CONDITIONS T'^l'Zi HC


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PDF CD54HC132/3A CD54HCT132/3A 54HCT CD54HC/HCT137 CD54HC/HCT137 2k-47k 54HC CD54HC137
HMF-03100-200

Abstract: No abstract text available
Text: length, utilizing Harris Microwave's gain optimized G10 process. The HMF-03100-200 ac tive layer is , -03110-200 suit able for the most demanding applications. The chip devices are selected from Harris Microwave , 54.0 37.6 23.7 5.6 -6.1 -17.1 -27.1 -3 2 .9 -3 5 .0 -3 7 .2 -4 6 .2 -5 3 .3 -64.1 MAG .763 . 721 .683


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PDF HMF-03110-200 HMF03100-200. ga158 HMF-03100-200
Not Available

Abstract: No abstract text available
Text: CMOS Logic lCs HARRIS SEfUCOND SECTOR CD54HC137/3A CD54HCT137/3A T - £> 7-2.1 -S S Static , High-Reliability High-Speed CMOS Logic IC s _ 4302271 0025007 2 37E » HARRIS SEMICOND SECTOR CD54HC132/3A CD54HCT132/3A HCT INPUT LOADING TABLE INPUT nA, nB T-fc7-2l-5 5 UNIT LOAD* 0.6 "Unit load is Alec limit specified in Static Characteristics Chart, e.g., 360 p A max. @ 25°C . S w i t c h i n g S p e e d (Limits with black dots (•) are tested 100%.) SWITCHING


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PDF CD54HC132/3A CD54HCT132/3A 54HCT CD54HC/HCT137 2k-47k
ic 74138 pin diagram

Abstract: 74138 PIN DIAGRAM 74139 pin diagram ic 74139 74138 OCTAL decoder ic 74139 decoder pin diagram ic 74138 gl520 74139 decoder 74139 ic
Text: © Harris HPL-82C339 Programmable Chip Select Decoder (PCSD™) Features • Memory or I/O , Timing Generation • Harris Advanced Scaled SAJI IV CMOS Process • Faster than Low-Power Schottky at , be used for both memory and I/O chip select decoder applications. Utilizing the Harris advanced , either 8-bit or 16-bit microprocessor applications. The Harris fuse link technology used in this product , . handling procedures should be followed CT5 CO CO O CM 00 X HPL, PCSD are trademarks of Harris


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PDF HPL-82C339 HPL-82C339-5. HPL-82C339-9. HPL-82C339-8. 1250C ic 74138 pin diagram 74138 PIN DIAGRAM 74139 pin diagram ic 74139 74138 OCTAL decoder ic 74139 decoder pin diagram ic 74138 gl520 74139 decoder 74139 ic
N03E

Abstract: HBC2500 CMP006 op-amp- 356 AMP016 transistor 2955 Analog Devices Opamp 3-input xnor opamp 555 AMP017
Text: Description HBC2500 is a mixed-signal (analog and digital) BICMOS library supported on the Harris FASTRACK Design System. The interface to Harris is such that the end user can perform the electrical design and simulation tasks at his location, subsequently passing the design database to Harris for Lay out and , Harris Fastrack. There are 93 Additional Cells in Development. · Up to 800mA or More Output Drive , Currently Used by Harris Designers · Silicon Functionality is Guaranteed to Match Simula tion Results or


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PDF HBC2500 HBC2500 N03E CMP006 op-amp- 356 AMP016 transistor 2955 Analog Devices Opamp 3-input xnor opamp 555 AMP017
LA 7376

Abstract: HFA3046 729E 16 PIN ic 810 ba 9319 1320j TRANSISTOR 7812 hfa3128 complementary npn-pnp power transistors PNP monolithic Transistor Arrays
Text: the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor , number 663046. Harris also provides an Application Note illustrating the use of these devices as RF , . 1-800-4- HARRIS | Copyright © Harris Corporation 1998 HFA3046, HFA3096, HFA3127, HFA3128 Absolute Maximum , = 10mA, VCE = 5V - 0.5 - - 0.5 - nv/°c S-Parameter and PSPICE model data is available from Harris Sales Offices, and Harris Semiconductor's web site. Common Emitter S-Parameters of NPN 3\im x 50um


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PDF HFA3046, HFA3096, HFA3127 HFA3128 HFA3046 HFA3096 1-800-4-HARRIS LA 7376 729E 16 PIN ic 810 ba 9319 1320j TRANSISTOR 7812 complementary npn-pnp power transistors PNP monolithic Transistor Arrays
4733 PNP

Abstract: No abstract text available
Text: HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s , .<1pA For PSPICE models, please request AnswerFAX document number 663046. Harris also provides an , Handling Procedures. 1-800-4-H AR R IS | C opyright © Harris C orporation 1998 HFA3046, HFA3096 , 0.5 - - 0.5 - n v /° c S-Param eter and PSPICE model data is available from Harris Sales Offices, and Harris S em iconductor’s web site. Common Emitter S-Parameters of NPN 3\im x 50


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PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 1-800-4-HARRIS 4733 PNP
dg201acj

Abstract: dg201a DG201ACK
Text: (2 ) HARRIS S E M I C O N D U C T O R Quad Monolithic SPST CMOS Analog Switches FEATURES · · · · · · · ± 15V Input Signal Range Low R|>S(on) (S 175Î1) TTL, CMOS Compatible Latch Proof True , Harris ' new 44V CMOS process. These bidirectional switches are latch-proof and feature break-before-make , 'Switches Shown for Logic "1 " Input Figure 1: Functional Diagram HARRIS SEMICONDUCTOR S SO LE"AN D , II o 7-21 D G 201A/DG202 D G 2 0 1 A /D G 2 0 2 DG201A/DG202 D G 2 0 1 A /D G 2 0 2


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PDF DG201A DG202 DG201A/DG202 DG201A/DG202 dg201acj dg201a DG201ACK
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