| HZU12 |
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Hitachi Semiconductor
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Silicon Epitaxial Planar Zener Diode for Stabilizer |
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Original |
PDF
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| HZU12 |
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Renesas Technology
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Original |
PDF
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| HZU12 |
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Unknown
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The Diode Data Book with Package Outlines 1993 |
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Scan |
PDF
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| HZU12A1L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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Original |
PDF
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| HZU12A1L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 12V, Z-diode (operation in reverse direction), Stamping Code:121 |
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Original |
PDF
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| HZU12A1L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 11.6 to 12.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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| HZU12A2L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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Original |
PDF
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| HZU12A2L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 12V, Z-diode (operation in reverse direction), Stamping Code:122 |
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Original |
PDF
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| HZU12A2L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 11.9 to 12.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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| HZU12A3L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 12V, Z-diode (operation in reverse direction), Stamping Code:123 |
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Original |
PDF
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| HZU12A3L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
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Original |
PDF
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| HZU12A3L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 12.2 to 12.7; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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| HZU12B |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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Original |
PDF
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| HZU12B |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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Original |
PDF
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| HZU12B |
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Renesas Technology
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Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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| HZU12B1 |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diodes for Stabilizer |
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Original |
PDF
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| HZU12B1 |
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Renesas Technology
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Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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| HZU12B1L |
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Renesas Technology
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SMD, Zener Diode for Low Noise, 12V, Z-diode (operation in reverse direction), Stamping Code:124 |
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Original |
PDF
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| HZU12B1L |
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Renesas Technology
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Silicon Epitaxial Planar Zener Diode for Low Noise Application |
|
Original |
PDF
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| HZU12B1L |
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Renesas Technology
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Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 12.4 to 12.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP |
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Original |
PDF
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