The Datasheet Archive

HY514100A datasheet (2)

Part Manufacturer Description Type PDF
HY514100AJ Hynix Semiconductor 4Mx1, Fast Page mode Original PDF
HY514100AT Hynix Semiconductor 4Mx1, Fast Page mode Original PDF

HY514100A Datasheets Context Search

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jdda

Abstract: HY514100AJ HY514100ALJ
Text: ) 1AC06-30-MAY95 87 «HYUNDAI HY514100A Series ORDERING INFORMATION PART NUMBER HY514100AJ HY514100ALJ HY514100AT HY514100ALT HY514100AR HY514100ALR SPEED 50/60/70 50/60/70 50/60/70 50/60/70 50/60 , and ICC7 are applied to L-parts only ( HY514100ALJ , HY514100ALT and HY514100ALR ). 1AC06-30 , . )= 128ms is applied to L-parts ( HY514100ALJ , HY514100ALT and HY514100ALR ). 12.A burst of 1024 , ·HYUNDAI DESCRIPTION H Y 5 1 4 1 0 0 A S e r ie s 4M x1-bit CMOS DRAM The HY514100A is


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PDF HY514100A Schottky00 1AC06-30-MAY95 HY514100AJ HY514100ALJ HY514100AT HY514100ALT jdda
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Abstract: No abstract text available
Text: applied to L-parts only ( HY514100ALJ , HY514100ALT and HY514100ALR ). 4b7S0ôô 0 00 4 10 7 S3b , ( HY514100ALJ , HY514100ALT and HY514100ALR ). 12.A burst o f 1024 C A$-before-R AS refresh cycles must be , HY514100A Series -HYUNDAI ORDERING INFORMATION PART NUMBER SPEED HY514100AJ 50/60/70 HY514100ALJ HY514100AT HY514100ALT POWER PACKAGE 50/60/70 L-part SOJ SOJ 50/60/70 50/60 , HY514100A Series »HYUNDAI 4M x 1 -bit CMOS DRAM DESCRIPTION The HY514100A is the 2nd


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PDF HY514100A HY514100A 1AC06-30-MAY95 HY514100AJ HY514100ALJ HY514100AT HY514100ALT
Not Available

Abstract: No abstract text available
Text: Tfl7 HY514100A Series ••HYUNDAI ORDERING INFORMATION PART NUMBER SPEED HY514100AJ HY514100AU HY514100AT HY514100ALT HY514100AR HY514100ALR 50/60/70 50/60/70 50/60/70 50/60/70 50/60 , L-part only ( HY514100ALJ , HY514100ALT and HY514100ALR ). 1AC06-20-APR93 4L7S0fifl 121 00014GT , ( HY514100ALJ , HY514100ALT and HY514100ALR ). 12.These specifications are applied to the Test Mode , The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A


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PDF 14100A HY514100A HV514100A 1AC06-20-APR93 4b75DÃ HY514100AJ HY514100AU HY514100AT
HY514100A

Abstract: 512Kx1+DRAM
Text: . ICC5(max.) = 0.2mA and ICC7 are applied to L-part only ( HY514100ALJ , HY514100ALT and HY514100ALR ). , ( HY514100ALJ , HY514100ALT and HY514100ALR ). 12. These specifications are applied to the Test Mode , Series ORDERING INFORMATION PART NUMBER SPEED POWER PACKAGE HY514100AJ HY514100AU HY51410QAT HY514100ALT HY514100AR HY514100ALR 50/60/70 50/60/70 50/60/70 50/60/70 50/60/70 50/60/70 L-part L-part , HYUNDAI SEMICONDUCTOR DESCRIPTION HY514100A Series 4M X 1-bit CMOS DRAM The HY514100A


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PDF HY514100A HY5141OOA 1AC06-20-APR93 HY514100AJ HY514100AU HY51410QAT HY514100ALT 512Kx1+DRAM
Not Available

Abstract: No abstract text available
Text: 70ns 20ns 45ns • Refresh cycle Part number Refresh Normal L-part HY514100A 1 K 1 6ms 128ms ORDERING INFORMATION Part Name Refresh Power Package HY514100AJ 1 K 20/26Pin SOJ HY5141 00ALJ 1 K L-part 20/26Pin SOJ HY514100AT 1 K 20/26Pin TSOP-II HY514100ALT 1 K L-part 20/26Pin TSOP-II *L : Low power This document ¡s a , •HYUNDAI HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized , .10/ Jan.98 y Hyundai Semiconductor -HYUNDAI HY514100A FUNCTIONAL BLOCK DIAGRAM WE CAS Data Input Buffer -


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PDF HY514100A 128ms
Not Available

Abstract: No abstract text available
Text: 70ns 20ns 45ns • Refresh cycle Part number Refresh Normal L-part HY514100A 1K 16ms 128ms ORDERING INFORMATION Part Name Refresh HY514100AJ 1K HY514100ALJ 1K HY514100AT 1K HY514100ALT 1K Power Package 20/26Pin SOJ L-part 20/26Pin , •HYUNDAI HY514100A 4Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 4M b it d y n a , licences are im plied . , . . Rev. 10 / Jan .98 1 Hyundai Sem iconductor -HYUNDAI HY514100A


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PDF HY514100A
Not Available

Abstract: No abstract text available
Text: HY514100AJ HY514100AU HY514100AT HY514100ALT HY514100AR HY514100ALR 50/60/70 50/60/70 50/60/70 50/60/70 50 , . 5. ICC5(max.)= 0.2mA and ICC7 are applied to L-part only ( HY514100AU , HY514100ALT and HY514100ALR ). , time is controlled by tAA. 11.tREF(max.)= 128ms is applied to L-parts ( HY514100AU , HY514100ALT and , -MAY94 11q «HYUNDAI HY514100A Series ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT , 5.0 - 5.5 VCC+ 1.0 0.8 V V V 120 1AC06-30-MA Y94 -HYUNDAI HY514100A Series DC


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PDF HY5141OOA HY5141 HY51410QA such1380 1AC06-30-MAY94 HY514100A HY514100AJ HY514100AU HY514100AT
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Abstract: No abstract text available
Text: INFORMATION PART NUMBER SPEED HY514100AJ HY514100AU HY514100AT HY514100ALT HY514100AR HY514100ALR , operation. 5. Icc5(max.)= 0.2mA and ICC7 are applied to L-part only ( HY514100AU , HY514100ALT and HY514100ALR ). 1AC06-30-MAY94 m MtiTSOafl 121 Q QQ5 3 flfi 712 » HY514100A Series , tim e is controlled by tAA. 11.tREF(max.)= 128ms is applied to L-parts ( HY514100AU , HY514100ALT and , HY514100A Series "H Y U N D A I 4M X 1-b it CMOS DRAM DESCRIPTION The HY514100A is the


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PDF HY514100A Schot0300 1AC06-30-MAY94 D002U0Q HY514100AJ HY514100AU
1998 - A0-A10d

Abstract: No abstract text available
Text: HY514100AJ HY514100ALJ HY514100AT HY514100ALT *L : Low power Refresh 1K 1K 1K 1K Power Package 20 , HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , Y Refresh cycle Part number HY514100A Refresh 1K Normal 16ms L-part 128ms Power 687mW 605mW 522mW Y , Rev. 10/Jan.98 1 HY514100A FUNCTIONAL BLOCK DIAGRAM D Q Data Input Buffer Data , Generator Substrate Bias Generator VCC VSS 4Mx1,FP DRAM Rev. 10/Jan.98 2 HY514100A PIN


Original
PDF HY514100A 128ms 10/Jan A0-A10d
HY514100A

Abstract: HY514100ALT HY514100AJ 4Mx1
Text: Part number Refresh Normal L-part HY514100A 1K 16ms 128ms ORDERING INFORMATION Part Name Refresh HY514100AJ 1K HY514100ALJ 1K HY514100AT 1K HY514100ALT 1K , HY514100A 4Mx1, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 4,194 , licences are implied Hyundai Semiconductor Rev.10 / Jan.98 1 HY514100A FUNCTIONAL BLOCK DIAGRAM , 4Mx1,FP DRAM Rev.10 / Jan.98 2 VCC VSS HY514100A PIN CONFIGURATION (Marking Side) D


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PDF HY514100A 128ms HY514100A HY514100ALT HY514100AJ 4Mx1
Not Available

Abstract: No abstract text available
Text: consum ption and high reliability. HY514100A Series 4M x 1 -bit CMOS DRAM ORDERING INFORMATION P art Num ber HY514100AJ HY514100ALJ HY514100AT HY514100ALT HY514100AR HY514100ALR SPEED 50/60/70 50/60/70 , HY514100A Series PIN CONFIGURATION (Marking Side) D C 1o WE C 2 RÂS C 3 NC Z 4 A10 C 5 26 3 Vss 25 , (+5V) Ground Rev.01 / Jul.96 34 ·H Y U N D A I HY514100A Series ABSOLUTE MAXIMUM , HY514100A Series DC CHARACTERISTICS (T^=0'C to 7 0 t , V cc= 5 V ± 10%. Vss=0V, unless otherwise noted


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PDF HY514100A HY514100AJ HY514100ALJ HY514100AT HY514100ALT HY514100AR HY514100ALR 128ms
HYM536410AMG

Abstract: hym536410am HY5117400A HY514100A
Text: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þ decoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM / ASLTM are Tin-Lead plated and HYM536410AMG / ASLMG , HY514100A data sheet for detailed information. 5. Measured at with a load equivalent to 2 TTL loads and


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PDF HYM536410A 4Mx36-bit 36-bit HY5117400A HY514100A HYM536410AM HYM536410AMG 1CE11-10-DEC94 HY5117400A
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Abstract: No abstract text available
Text: "H Y U N D A I DESCRIPTION H Y M 536400A Series 4M x 36-blt CMOS DRAM MODULE PRELIMINARY S E M IC O N D U C TO R The HYM536400A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM. The HYM536400AM/ALM are Un-Lead plated and HYM536400AMG/ALMG , all inputs. 3. Refer to the HY514100A data sheet for detailed information. 4. Measured with a load


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PDF 36400A 36-blt HYM536400A 36-bit HY514100A HYM536400AM/ALM HYM536400AMG/ALMG 1CE04-00-MATO 1CE04-00-MAY93
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Abstract: No abstract text available
Text: HYM584000A M-Series •H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM. The HYM584000AM/ALM are Tin-Lead plated socket type Single In-line Memory Modules suitable for easy , for all inputs. 3. Refer to the HY514100A data sheet for detailed information. 4. Measured with a


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PDF HYM584000A HY514100A 22fiF HYM584000AM/ALM acce4000A 1BC03-11-FEB94 0-05M 031MIN.
PI-38

Abstract: No abstract text available
Text: ·HYUNDAI SEMICONDUCTOR DESCRIPTION HYM594000B Series 4M X 9-bit CMOS DRAM MODULE PRELIMINARY The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each DRAM. The HYM594000BM/BLM are Tin-Lead plated socket type Single , assum ed to be 5ns for all Inputs. 3. Refer to the HY5117400 and HY514100A data sheet for detailed


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PDF HYM594000B HY5117400 HY514100A HYM594000BM/BLM 1BC0e-00 MAY93 53-BEFORE-H 1BC06-00 PI-38
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Abstract: No abstract text available
Text: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for each DFtAM. The HYM53681OAM/ALM/ATM , HY514100A data sheet for detailed information. 5. Measured with a load equivalent to 2 TTL loads and 10OpF


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PDF 36-bit HYM536810A HY5117400A HY514100A HYM53681OAM/ALM/ATM/ALTM HYM53681OAMG/ALMG/ATMG/ALTMG HYM536810A/AL HYM536810AT/ALT 4b75DflA
HYM536410MG

Abstract: No abstract text available
Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM. The HYM53641OM/LM are Tin-Lead plated and HYM536410MG/LMG are Gold , ed to be 5ns for all inputs. 3. Refer to the HY5117400 and HY514100A data sheet for detailed


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PDF HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG
HY5118160

Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Text: .87 HY514100. . 4M HY514100A. . 4M HY514100B. . 4M HY51V4100B. . 4M


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PDF 256K-bits HY53C256. HY53C464 HY531000. DB101-20-MAY94 HY5118160 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Not Available

Abstract: No abstract text available
Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted for each DRAM. The HYM594000BM/BLM are Tin-Lead plated socket type Single , inputs. 3. Refer to the HY5117400 and HY514100A data sheet for detailed information. 4. Measured with


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PDF HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi
Not Available

Abstract: No abstract text available
Text: ‘ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|aF decoupling capacitor is mounted for each DRAM. The HYM53641OAM/ALM/ATM/ALTM are Tin-Lead , HY5117400A and HY514100A data sheet for detailed information. 5. Measured with a load equivalent to 2 TTL


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PDF HYM536410A 36-bit HYM53641OA HY5117400A HY514100A HYM53641OAM/ALM/ATM/ALTM HYM53641OAMG/ALMG/ATMG/ALTMG 13W72 HYM536410A/AL
HYM533400

Abstract: No abstract text available
Text: HYUNDAI DESCRIPTION HYM533400 M-Series 4M x 33-bit CMOS DRAM MODULE The HYM533400 is a 4M x 33-bit Fast page mode CMOS DRAM module consisting of thirty three HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22juF decoupling capacitor is mounted for each DRAM. The HYM533400M/LM are Tin-Lead plated and HYM533400MG/LMG are Gold plated socket type Single In-line Memory , time is measured between Vih and V il and assumed to be 5ns for all inputs. 3. Refer to the HY514100A


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PDF HYM533400 33-bit HY514100A 22juF HYM533400M/LM HYM533400MG/LMG 1CE11-11-FEB94
bt dof

Abstract: No abstract text available
Text: •HYUNDAI HYM536410 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A In 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 ^uF decoupling capacitor is mounted for each DRAM. The HYM536410M/LM are Tin-Lead plated and , and assumed to be 5ns for all inputs. 3. Refer to the HY5117400 and HY514100A data sheet for


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PDF HYM536410 36-bit HY5117400 HY514100A HYM536410M/LM HYM536410MG/LMG 4b750flà 1CE06-00-MAY93 bt dof
Not Available

Abstract: No abstract text available
Text: ( '«YUHDAt ) DESCRIPTION * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22uF decoupling are mounted for each DRAM. The HYM53681OAM/ASLM/ATM/ASLTM are , be 5ns for all inputs. Refer to the HY5117400A and HY514100A data sheet for detailed information


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PDF 8Mx36-blt HYM536810A 36-bit HY5117400A HY514100A HYM53681OAM/ASLM/ATM/ASLTM HYM53681OAMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM53681
HY5117400A

Abstract: HY514100A HYM536810AM HYM536810AMG
Text: HYM536810A M-Series 8Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The HYM536810AM/ASLM/ATM/ASLTM are Tin-Lead plated and HYM536810AMG/ALMG/ATMG , to be 5ns for all inputs. 4. Refer to the HY5117400A and HY514100A data sheet for detailed


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PDF HYM536810A 8Mx36-bit 36-bit HY5117400A HY514100A HYM536810AM/ASLM/ATM/ASLTM HYM536810AMG/ALMG/ATMG/ALTMG 1CE13-10-DEC94 HYM536810AM HYM536810AMG
HY514260

Abstract: HY5117404A 164-04A 4m 300mil
Text: s t P a g e ,512K Ref. 2/CAS 256K x 16 EDO 2 /C A S HY514100A HY514400A HY514404A


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PDF HY531000A HY534256A 256KX8 HY512800 HY512264 HY5120 6404A HY5116404B HY51V16404A HY51V16404B HY514260 HY5117404A 164-04A 4m 300mil
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