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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C

HV diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - D3 017 6PIN

Abstract: ESD Diodes HV diode DIODE marking LV
Text: other channel of the CM1240 is a high voltage ( HV ) diode which has a capacitance of 25 pF enabling it to , ) Symbol CLV CHV ILV IHV VCL(LV) Parameter LV Diode Capacitance at 3 Vdc; 1 MHz, 30 mVac HV Diode Capacitance at 3 Vdc; 1 MHz, 30 mVac LV Diode Leakage at +3.3 V reverse bias voltage HV Diode Leakage at +11 V reverse bias voltage LV Diode Signal Clamp Voltage: Positive Clamp, 10 mA Negative Clamp, -10 mA HV Diode , Resistance: Positive Negative HV Diode Dynamic Resistance: Positive Negative (Note 2) 5.6 -1.5 13 -1.5 ±25


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PDF CM1240 CM1240/D D3 017 6PIN ESD Diodes HV diode DIODE marking LV
2010 - HV diode

Abstract: ESD Diodes CM12 CM1240 CM1240-F4SE D3 017 6PIN
Text: ( HV ) diode which has a capacitance of 25pF enabling it to protect power supply inputs or OLED power , Units CLV LV diode Capacitance at 3Vdc; 1MHz, 30mVac 6 pF CHV HV diode Capacitance at , µA IHV HV Diode Leakage at +11V reverse bias voltage 0.01 0.4 µA VCL(LV) VCL( HV , ­0.8 9 ­0.4 V V HV Diode Signal Clamp Voltage: Positive Clamp, 10mA Negative Clamp, ­10mA , ±12 kV kV LV Diode Dynamic Resistance: Positive Negative 2.8 1.2 HV Diode


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PDF CM1240 OT-563 CM1240 HV diode ESD Diodes CM12 CM1240-F4SE D3 017 6PIN
2011 - Not Available

Abstract: No abstract text available
Text: protection. The other channel of the CM1240 is a high voltage ( HV ) diode which has a capacitance of 25 pF , CHV HV Diode Capacitance at 3 Vdc; 1 MHz, 30 mVac 25 pF ILV LV Diode Leakage at +3.3 V reverse bias voltage 0.01 0.4 mA IHV HV Diode Leakage at +11 V reverse bias voltage 0.01 , ˆ’10 mA 5.6 −1.5 6.8 –0.8 9 −0.4 VCL( HV ) HV Diode Signal Clamp Voltage: Positive , : Positive Negative 2.8 1.2 RDYN( HV ) HV Diode Dynamic Resistance: Positive Negative 1.0 0.7


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PDF CM1240 CM1240 CM1240/D
2007 - TDFN-08

Abstract: ESD Diodes dap 6 HV Diode tDFN 2mm 6pin D3 017 6PIN
Text: channel of the CM1240 is a high voltage ( HV ) diode which has a capacitance of 25pF enabling it to protect , ) Symbol CLV CHV ILV IHV Parameter LV diode Capacitance at 3Vdc; 1MHz, 30mVac HV diode Capacitance at 3Vdc; 1MHz, 30mVac LV Diode Leakage at +3.3V reverse bias voltage HV Diode Leakage at +11V reverse bias , , 10mA Negative Clamp, ­10mA HV Diode Signal Clamp Voltage: Positive Clamp, 10mA Negative Clamp, ­10mA , discharge method LV Diode Dynamic Resistance: Positive Negative HV Diode Dynamic Resistance: Positive


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PDF CM1240 OT-563 MO-229C TDFN-08 ESD Diodes dap 6 HV Diode tDFN 2mm 6pin D3 017 6PIN
2007 - D3 017 6PIN

Abstract: DAP 011 CM1240 CM1240-04D4 CM1240-04DE CM1240-F4SE MO-229 MO-229C standard MINI USB dimension drawing
Text: of the CM1240 is a high voltage ( HV ) diode which has a capacitance of 25pF enabling it to protect , HV diode Capacitance at 3Vdc; 1MHz, 30mVac 25 pF ILV LV Diode Leakage at +3.3V reverse bias voltage 0.01 0.4 A IHV HV Diode Leakage at +11V reverse bias voltage 0.01 0.4 , ­1.5 6.8 ­0.8 9 ­0.4 V V VCL( HV ) HV Diode Signal Clamp Voltage: Positive Clamp, 10mA , RDYN( HV ) HV Diode Dynamic Resistance: Positive Negative 1 0.7 Note 1: Guaranteed at


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PDF CM1240 CM1240 OT-563 MO-229C D3 017 6PIN DAP 011 CM1240-04D4 CM1240-04DE CM1240-F4SE MO-229 standard MINI USB dimension drawing
2015 - RZ 464

Abstract: 10KV DIODE linear opto coupler OC250 rz464 HIGH VOLTAGE OPTO COUPLER noise diode Z100SG what is optocoupler HIGH VOLTAGE DIODE 10kv
Text: Light emitting diode - a.k.a. LEDs Forward current · Photo diode - a.k.a. HV diode , RZ 464 or Z100SG , Multipliers, Inc. Physical characteristics OC-100 A six leaded device containing one HV diode and two LED's. The LED's are positioned on either side of the HV diode to maximize the exposure of the junctions to , junctions of the high voltage diode . The high voltage diode is reverse-biased, so that the leakage current through the diode varies in response to the light levels from the LEDs. 8711 W. Roosevelt Ave. Visalia


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2009 - CEA-936-A

Abstract: T-75 A HIGH VOLTAGE DIODES T-75 High voltage diode HV diode CEA-936 Marking STMicroelectronics QFN J-STD-004 HIGH VOLTAGE DIODE kv USBULC1606-4M8 t-75 hv diode
Text: , level 4 Contact discharge HV diode Contact discharge LV diodes Air discharge all pins 15 15 8 , clamping voltage IPP = 1 A, tp = 8/20 µs IPP = 2.5 A, tp = 8/20 µs VF2 + HV Diode Reverse , -0.4 V 1.0 µA VF2 - HV Diode Forward Voltage ­ Negative Voltage IRM2 High Voltage diode leakage current VIN = 11 V, DAP grounded 0.1 Rd2 Dynamic Resistance of HV Diode IPP = , Diode array topology D+/D- and ID lines protection with 6.8 V low voltage diodes (LV


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PDF USBULC1606-4M8 CEA-936-A T-75 A HIGH VOLTAGE DIODES T-75 High voltage diode HV diode CEA-936 Marking STMicroelectronics QFN J-STD-004 HIGH VOLTAGE DIODE kv USBULC1606-4M8 t-75 hv diode
2009 - Not Available

Abstract: No abstract text available
Text: ESD discharge IEC 61000-4-2, level 4 Contact discharge HV diode Contact discharge LV diodes Air , µs VF2 + HV Diode Reverse Voltage – Positive Voltage IF = 10 mA 2/15 Doc ID 16864 , conditions Min. Typ. Max. Unit -0.4 V 1.0 µA VF2 - HV Diode Forward Voltage â , Dynamic Resistance of HV Diode IPP = 1 A, tp = 8/20 µs 2.8 Ω C2 High Voltage diode input , Diode array topology I D+/D- and ID lines protection with 6.8 V low voltage diodes (LV) I


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PDF USBULC1606-4M8 CEA-936-A
2009 - Not Available

Abstract: No abstract text available
Text: ESD discharge IEC 61000-4-2, level 4 Contact discharge HV diode Contact discharge LV diodes Air , Voltage diode clamping voltage High Voltage diode clamping voltage HV Diode Reverse Voltage ­ Positive , , otherwise specified (continued) Parameter HV Diode Forward Voltage ­ Negative Voltage Test conditions IF = , = 11 V, DAP grounded Dynamic Resistance of HV Diode High Voltage diode input capacitance IPP = 1 A , Diode array topology D+/D- and ID lines protection with 6.8 V low voltage diodes (LV) VBUS line


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PDF USBULC1606-4M8 CEA-936-A
2009 - 0.6 um cmos process

Abstract: CMOS Process Family hv 082 pmos 1P2M depletion nmos trench mos nmos pmos array HV diode Trench MOS Schottky Rectifier
Text: 0.3 10 rectifier HV diode (dfwdph) 0.76 0.3 50 Schottky Diode Parameter If [µA , 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV , isolation FEOL MIDOX XT06 Trench Isolation Cross Section Mid-oxide module for MV/ HV elements PMV Medium-voltage P-channel module NGD Extended MV n-channel module DEPL MV/ HV depletion NMOS module HVS HV 40V PMOS, ext. HV 60V NMOS module HVE Ext. HV 20V NPN, 60V m-DMOS


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SMD magnetron

Abstract: klystron hv 102 HTE24 charger/discharger circuit HV diode 700M HTE15 HTE19 HTE25
Text: application for HV energy Capacitor's charger& discharger, various HV Loads, HV Snubber, HV dampping ,on HV diode , R-C tank,in Ion gun's termination,etc. * Resistance rating : 1k to 700M * Power Ratings up , ) · Electrophoresis * HV Capacitor Charging, Discharging ·CT, MRI · Image Intensifier ·


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PDF Mod000 Mil-Std-202, SMD magnetron klystron hv 102 HTE24 charger/discharger circuit HV diode 700M HTE15 HTE19 HTE25
P-Channel Depletion Mode FET

Abstract: 5155 transistor Depletion MOSFET 20V HV Diode breadboard 400 dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A
Text: Universa!Semiconductor HV DIODE (USH5155) ELECTRICAL CHARACTERISTICS {TA = + 25°C ) PARAMETER Breakdown Voltage Leakage , BVr ( V o lt s ) The Universal HV diode is a diffused junction device that is dielectrically , DMOS FET P-channel enhancement mode DMOS FET insulated gate thyristor (IGT) thyristor diode CMOS , INPUT ^\ O F F ) [A -M < - 10% Universa!Semiconductor HV N-CHANNEL ENHANCEMENT MODE , USH5156 pinout 37 Universa!Semiconductor HV P-CHANNEL ENHANCEMENT MODE DMOS FET (USH5155 & USH5156


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PDF USH5155; USH5156 USH5155 USH5156 P-Channel Depletion Mode FET 5155 transistor Depletion MOSFET 20V HV Diode breadboard 400 dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A
2011 - diode MARKING CODE A9

Abstract: No abstract text available
Text: CIN_HV HV Channel Input Capacitance At 1 MHz, VN = 0 V, VIN = 2.5 V 53 VF_HV HV Diode , Temperature and Voltage High Voltage Zener Diode Protects Supply Rail No Need for External Bypass Capacitors , Pin 1 Pin 2 LV HV Pin 3 VN (8) CH2 (2) VCC VN (7) CH3 (3) VCC (4) DAP , ESD Channel 3 CH3 I/O LV Low−capacitance ESD Channel 4 VCC HV VDD 5 GND , (Pins Up View) Die Attach Pad (Ground) 8 7 6 5 P41 DAP 1 2 3 4 Pin 1 Marking HV


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PDF CM1641 IEC61000â 517BC CM1641/D diode MARKING CODE A9
2011 - HV diode

Abstract: CM1641 CM164-1 marking CODE VN UDFN-8
Text: Current HV Channel Input Capacitance HV Diode Breakdown Voltage Positive Voltage ESD Protection Peak , Voltage High Voltage Zener Diode Protects Supply Rail No Need for External Bypass Capacitors Each I/O Pin , Pin 1 Pin 2 Pin 3 LV HV CH1 (1) High-Speed Data Lines CH2 (2) CH3 (3) VCC (4) DAP* VN (8) VN (7 , /O HV VDD - - - - - Description LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel HV ESD Channel Ground Negative Voltage Supply Rail Negative Voltage Supply Rail


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PDF CM1641 IEC61000-4-2 517BC CM1641/D HV diode CM164-1 marking CODE VN UDFN-8
1999 - 0.6 um cmos process

Abstract: bsim3 MICRON POWER RESISTOR Mos Trench MOS Schottky Rectifier BSIM3 SOI pmos bsim3 model for 0.18 micron technology for hspice P-Channel Depletion Mosfets MOS RM3 bsim3 model
Text: : Bulk-isolated MV PMOS, scalable Schottky diode , HV rectifier diode - New: option of arraying HV NMOS devices - , diode Page 3 XT06 TRENCH etch and refill TCOVER HV N-well HVS HV P-well HVE N-well , ] rectifier diode NDIFF/PTUB dfwdn CORE 0.76 100 10 0.3 rectifier HV diode field imp/NTUB dfwdph HVS 0.76 120 50 0.3 rectifier HV diode CCIMP/NTUB dfwdcc PHVE 0.76 , dnw CORE 33 0.003 @Vnw = 0V 0.10 @Vnw = 60V NWELL/PTUB diode ( HV area) dnwh MIDOX


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2011 - diode MARKING CODE A9

Abstract: No abstract text available
Text: HV Channel Input Capacitance At 1 MHz, VN = 0 V, VIN = 2.5 V HV Diode Breakdown Voltage , Zener Diode Protects Supply Rail No Need for External Bypass Capacitors Each I/O Pin can Withstand , Pin 3 HV VCC CH1 (1) High−Speed Data Lines VN (8) VN (7) CH2 (2) CH3 (3) VCC (4 , HV VDD 5 GND − Ground 6 VN − Negative Voltage Supply Rail 7 VN â , Marking HV ESD Channel 1 2 3 4 8 7 6 5 CM1643−04D4 8−Lead UDFN Package SPECIFICATIONS


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PDF CM1643 IEC61000â 517BC CM1643/D diode MARKING CODE A9
2010 - CM1241

Abstract: CM1241-04D4 MO-229C
Text: , VN=0V, VIN=2.5V 53 VF_HV HV Diode Breakdown Voltage Positive Voltage IF = 10mA; TA , High voltage zener diode protects supply rail No need for external bypass capacitors Each I/O pin can , Low-capacitance ESD Channel 4 VCC HV VDD HV ESD Channel 5 GND Ground 6 VN Negative , UNITS 6.8 8.2 9.2 V ­1.05 ­0.9 ­0.6 V LV Diode Reverse Voltage (Positive Voltage) IF = 10mA; TA= 25° C LV Diode Forward Voltage (Negative Voltage) IF = 10mA; TA= 25° C


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PDF CM1241 IEC61000-4-2 201DERING CM1241 CM1241-04D4 MO-229C
2011 - CM1241

Abstract: No abstract text available
Text: Input Capacitance At 1 MHz, VN = 0 V, VIN = 2.5 V 53 VF_HV HV Diode Breakdown Voltage , Capacitance Change with Temperature and Voltage High Voltage Zener Diode Protects Supply Rail No Need for , 3 CH3 I/O LV Low−capacitance ESD Channel 4 VCC HV VDD 5 GND 6 VN , Supply Rail DAP GND Bottom View (Pins Up View) 8 7 6 5 1 2 3 Pin 1 Marking HV ESD , Diode Reverse Voltage (Positive Voltage) IF = 10 mA; TA = 25°C 6.8 8.2 9.2 V LV


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PDF CM1241 IEC61000â 511BF CM1241/D CM1241
2011 - CM1241

Abstract: CM1241-04D4 WDFN8 change over circuit in hv DIODE marking LV
Text: HV Channel Leakage Current HV Channel Input Capacitance HV Diode Breakdown Voltage Positive Voltage , with Temperature and Voltage High Voltage Zener Diode Protects Supply Rail No Need for External Bypass , CH3 VCC GND VN VN VN GND Type I/O I/O I/O HV VDD Description LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel HV ESD Channel Ground Negative Voltage Supply Rail , CHARACTERISTICS (Note1) Symbol VF Parameter LV Diode Reverse Voltage (Positive Voltage) LV Diode Forward Voltage


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PDF CM1241 IEC61000-4-2 511BF CM1241/D CM1241-04D4 WDFN8 change over circuit in hv DIODE marking LV
2010 - CM164-1

Abstract: CM1641 MO-229C
Text: VF_HV HV Diode Breakdown Voltage Positive Voltage IF = 10mA; TA=25° C IN VESD VCL , voltage High voltage zener diode protects supply rail No need for external bypass capacitors Each I/O , VCC HV VDD HV ESD Channel 5 GND Ground 6 VN Negative Voltage Supply Rail 7 , 9.2 V ­1.05 ­0.9 ­0.6 V 100 nA 1.5 pF LV Diode Reverse Voltage (Positive Voltage) IF = 10mA; TA= 25° C LV Diode Forward Voltage (Negative Voltage) IF = 10mA; TA


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PDF CM1641 IEC61000-4-2 CM164-1 CM1641 MO-229C
2010 - Not Available

Abstract: No abstract text available
Text: HV Channel Input Capacitance HV Diode Breakdown Voltage Positive Voltage ESD Protection Peak , Voltage Zener Diode Protects Supply Rail No Need for External Bypass Capacitors Each I/O Pin Can Withstand , -8 PACKAGE Pin 1 2 3 4 5 6 7 8 DAP Name CH1 CH2 CH3 VCC GND VN VN VN GND Type I/0 I/0 I/0 HV VDD Description LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel LV Low-capacitance ESD Channel HV ESD , Parameter LV Diode Reverse Voltage (Positive Voltage) LV Diode Forward Voltage (Negative Voltage) ILEAK LV


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PDF ESD7554 IEC61000-4-2 517BC ESD7554/D
flyback transformer pin connections

Abstract: 20kv flyback transformer flyback transformer lg E52853 hv flyback transformer KE5612G-U E35688 FBT LIST 12 pin flyback transformer HV transformer specification
Text: DC 10 KV 13 H.V . DIODE SILICON DIODE DC 12 KV E72128 H.V . COIL WIRE RUBBER FACTORY , =0mA) 29.5kVdc REGULATION STD.±0.5kVdc(AT Ia=0 mA) FOCUS VOLTAGE Vf MAX: HV *(0.35) OR MORE Vf MIN: HV *(0.20) OR LESS SCREEN VOLTAGE Vs MAX: 1600 kVdc ( ( ) kVdc ) kVdc Vdc Vdc Vs , mA CONDITIONS Ia=0mA Ta=60 HV = kVdc Ta=60 STORAGE TEMP RANGE -20 +70 OPERATING TEMP , E48923 94V-0 CHEMICAL CO., LTD. 5 CASE 6 H.V . BOBBIN 7 L.V. BOBBIN 8


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PDF BSC28-2508 BSC2894V-0 E145391 E72128 flyback transformer pin connections 20kv flyback transformer flyback transformer lg E52853 hv flyback transformer KE5612G-U E35688 FBT LIST 12 pin flyback transformer HV transformer specification
kvp 42 DIODE

Abstract: kvp 68A kvp diode kvp 34 DIODE kvp 30 DIODE kvp 88 diode kvp 23A Kvp 26A kvp 26 DIODE 100-200KV
Text: 1 -B O O -67B -O B 98 I I I 2 NEW E-MAIL ADDRESS EDI-SALES@INTERNETMCI.COM HV DIODE , SERIES HAB WAB YAB ZAB 3W EF, EG, EH XL10 EK EM EP ER HV VT PAGE 4 6 8 10 12 14 16 14 14 14 14 18 20 , FPI-W 58 HAB 4 HTD3 142 HTDR3 144 HTD5,15,30 140 HV 18 HVPF 88 HX 18 KHP 120 KMO 124 KVF 126 KVO 124 KVP


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PDF 600mA 220mA 200mA 175mA 150mA 100mA 500mA kvp 42 DIODE kvp 68A kvp diode kvp 34 DIODE kvp 30 DIODE kvp 88 diode kvp 23A Kvp 26A kvp 26 DIODE 100-200KV
Kvp 26A

Abstract: kvp 3a 100-200KV kvp 34 DIODE kvp 42 DIODE hv rectifiers diode kvp 68A kvp 26 DIODE kvp diode 8ph ZENER
Text: products. HV DIODE ASSEMBLIES CURRENT 2.25-3.00A 2.25-2.50A 0.75-1 A 0.7-0.9A 0.6-1 A 500mA 0.4-.5A , YAB ZAB HAB 3W EF, EG, EH XL10 EK EM EP ER HV VT PAGE 6 8 10 4 12 14 16 14 14 14 14 18 20 STANDARD , FPI-W HAB HTD3 HTDR3 HTD5,15,30 HV HVPF HX KHP KMO KVF KVO KVP LHC MPI PAGE 14 14 14 14 80 60 90 58 4


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PDF 600mA 220mA 200mA 175mA 150mA 100mA 500mA Kvp 26A kvp 3a 100-200KV kvp 34 DIODE kvp 42 DIODE hv rectifiers diode kvp 68A kvp 26 DIODE kvp diode 8ph ZENER
Not Available

Abstract: No abstract text available
Text: Universa!Semiconductor HV DIODE (USH5155) ELECTRICAL CHARACTERISTICS (TA = + 25 °C) PARAMETER Breakdown Voltage Leakage , « 0 01 0 0 0 BVr (Volts) The Universal HV diode is a diffused junction device that is , insulated gate th y ris to r (IGT) th y ris to r diode CMOS inverter DESCRIPTION The U S H 5155 and U S , . T e s t W a v e fo rm 36 T3tifl341 0000105 718 Universa!Semiconductor HV N-CHANNEL , bS4 Universa!Semiconductor HV P-CHANNEL ENHANCEMENT MODE DMOS FET (USH5155 & USH5156) ELECTRICAL


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PDF USH5155; USH5156 USH5155 3bfl341
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