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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

HT 25-19 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: M ) ^133% 12.5% 2S% DOUBLE • SIDE COOUNO 60 T O 400 » S O TO Ht 40 ■H L


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PDF BP107, Amperes/500-1300 MAX/10
Thermocouple Type K material

Abstract: BS1843 Din 43714 Thermocouple Type K Thermocouple color Thermocouple type J PT100 Thermocouple temperature color codes cable k type thermocouple sensor Thermocouple type k PT100 NICR-NI thermocouple
Text: SUPPORT, DUPLEX SIZE 3.0mm 4.5mm 6.0mm Standard CA-072 CA-073 CA-074 SIMPLEX HT -053 HT -058 HT -050 N/A DUPLEX HT -056 HT -059 HT -054 Colour coded terminal blocks are for in-head


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2004 - mosfet sot23-6 maxim

Abstract: No abstract text available
Text: 6-pin thin SOT23 and 6-pin 3mm x 3mm thin DFN packages. An internal PMOS pass transistor maintains , transistor , an internal feedback voltagedivider, and a power-good comparator. The error amplifier compares , ) P-channel MOSFET pass transistor . Unlike similar designs using PNP pass transistors, P-channel MOSFETs , current in dropout when the pass transistor saturates and use high base-drive currents under large loads , controls the pass transistor 's gate voltage, limiting the output current to 850mA (typ). If the output


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PDF 500mA MAX1589 175mV 21-0137I T633-2* MAX1589ETT300 MAX1589ETT075 MAX1589ETT150 mosfet sot23-6 maxim
2004 - Not Available

Abstract: No abstract text available
Text: Frequency Mixers print this page Notes: · Absolute maximum power, voltage and current ratings: a. RF power, 200mW b. Peak IF current, 40mA LO Power Level 17 dBm Pin Configuration Port LO RF IF Gnd Ext. Case Gnd Not Used ht 6 3 2 1,4,5 - · 1 dB COMPR. +14 dBm typ. · E = [IP3(dBm)-LO Power(dBm)]/10 ADEX-10H · For Surface Mount Environmental Specifications, please click here. 0.5 dB when IF is above 150MHz. · Conversion loss increases · General Quality Control Outline


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PDF 200mW ADEX-10H 150MHz.
2004 - SOT23-6 PMOS

Abstract: T633-2 t633 ht sot23-6 SOT-23 MOSFET P-CHANNEL a1 1- mark A2 SOT-23 mosfet Z6 SOT23
Text: 6-pin thin SOT23 and 6-pin 3mm x 3mm thin DFN packages. An internal PMOS pass transistor maintains , transistor , an internal feedback voltagedivider, and a power-good comparator. The error amplifier compares , ) P-channel MOSFET pass transistor . Unlike similar designs using PNP pass transistors, P-channel MOSFETs , current in dropout when the pass transistor saturates and use high base-drive currents under large loads , controls the pass transistor 's gate voltage, limiting the output current to 850mA (typ). If the output


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PDF 500mA MAX1589 175mV MAX1589ETT130+ MAX1589ETT130 MAX1589ETT130-T MAX1589ETT150-T MAX1589ETT180-T SOT23-6 PMOS T633-2 t633 ht sot23-6 SOT-23 MOSFET P-CHANNEL a1 1- mark A2 SOT-23 mosfet Z6 SOT23
2002 - coil former

Abstract: 1/3 phase inverters circuit diagram vt1001 MOSFET CURRENT output impedance 3 phase inverter ic PWM Transistor Bo 47 Dc to Ac (single phase) inverter convertor DC input 24 v output 5 v bipolar power transistor vce 600 volt 3 phase AC voltage regulator
Text: 2 Switching transistor collector current IC2 IC1 + IC2 ea s ht e v tp is :// it pa fo , Features ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 1.4 max. (Overall height) 1 , Unlatch2 I Pin Descriptions 7 ea s ht e v 2 S.C.P. tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s DT2 12 b em ou ic t la on te /e st -in in de for x. ma ht t m ion


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PDF AN8017SA AN8017SA coil former 1/3 phase inverters circuit diagram vt1001 MOSFET CURRENT output impedance 3 phase inverter ic PWM Transistor Bo 47 Dc to Ac (single phase) inverter convertor DC input 24 v output 5 v bipolar power transistor vce 600 volt 3 phase AC voltage regulator
2002 - Not Available

Abstract: No abstract text available
Text: ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . I Applications (0.75) 1.20 max , S.C.P. comp. REG-amp.1 0.9 V SRFB 47 SRIN 1 SRDV 48 SS 1 12 ea s ht e v tp is , for x. ma ht t m ion l . VREF PVCC1 EO 2 6 PWM2 16 IN−2 4 Error-amp , s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on


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PDF AN1149NFHK
1997 - transistor ic equivalent book

Abstract: No abstract text available
Text: magnetosound using 3-phase full-wave overlap drive. Built-in power transistor . · Standby mode for minimizing , ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 0.65 (0.625) 0.3 ­ 0.05 + 0.1 1.5±0.2 + 0.1 SEATING PLANE , 12 560pF HSL 15 0.022µF SL 1 SL 2 SL 3 0.022µF Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion


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PDF AN3861SA AN3861SA transistor ic equivalent book
mosfet to ignition coil

Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition 12 volt cd ignition schematic
Text: Gasoline engine ignition circuits represent a severe environment for semiconductor switches. A transistor , transistor . Electronic Ignition The introduction of electronic ignition — initially as an "after sales , in order to obtain improved cold starting. The bipolar transistor was therefore called upon typically , 6.0 volts and in some instances as low as 4.5 volts (worst case). A bipolar Darlington transistor and , terms of performance, cost and efficiency. A bipolar Darlington transistor with an 8 mH coil would only


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PDF 00V/DIV AN966: AN-969 mosfet to ignition coil 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition 12 volt cd ignition schematic
1997 - MN6622

Abstract: transistor ic equivalent book
Text: Band­ gap (2.5V) 5V Regulator (low­sat) 100kW ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 0 ~ 6 , power supply (external PNP power transistor ) · Built-in reset circuit (reset voltage : 4.82V) · Built-in , at Reset 5V Regulator External Transistor Base Current Limit Value Thermal Protective Circuit , motor driver 1, motor driver 2, and motor driver 3 circuits. ea s ht e v tp is :// it pa fo na llo so


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PDF AN8377N AN8377N 100kW MN6622 transistor ic equivalent book
1996 - ht 25 transistor

Abstract: drum sound ic drum ic CMOS drum generator HT-821AF-4 ht 70 drum sound ic drum Generator cmos TRANSISTOR ARRAY electric drum sound SPEECH SYNTHESIS
Text: HT - 821A0 3 SEC PCM SPEECH/GATE ARRAY SEP.29.1993 PAGE: A. General Description - HT , (or 3.5~5.0V). Program mable play function. Direct diver output transistor . Low stand-by current , indicator following level. 1 HT - 821A0 3 SEC PCM SPEECH/GATE ARRAY C. Application - · · · , generator. Production with speech interface. D. Block Diagram - SEP.29.1993 PAGE: 2 HT - , 1513.25 3 HT - 821A0 SEP.29.1993 3 SEC PCM SPEECH/GATE ARRAY PAGE: 4 F. Pin


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PDF 821A0 821A0 821A9 821A9----1 821AB 821AB----4 821AD 821AD----1 821AF 821AF----4 ht 25 transistor drum sound ic drum ic CMOS drum generator HT-821AF-4 ht 70 drum sound ic drum Generator cmos TRANSISTOR ARRAY electric drum sound SPEECH SYNTHESIS
2004 - ht 25 transistor

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Small Signal Transistor Arrays , (sat) transistor used) · Low voltage drive · Transistors with built-in resistor with 6 elements , ) *: When the dissipation on one device is TC = 25°C Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . A A V V A A , ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in


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PDF 2002/95/EC) UNA0222 UN222) ht 25 transistor
2009 - Cambridge capacitor capacitors

Abstract: C2470 DS-1639 AN-2497 Cambridge Semiconductor C2473 C2472 C2471 AN-2337 cambridge
Text: voltage during resonance ("Vresmax"), when collector current is very low Conditions inside the transistor , transistor ratings are relevant. RBSOA is a particularly important consideration as collector voltage starts , Vce The operating conditions of the transistor vary considerably across the load range of the power , transformer leakage inductance. RDFC-based converters usually have substantial ripple voltage on the HT , Standby B HT volts No kick Short on-time Vcemax varies Standby A Low kick on-time varies


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PDF AN-2497 AN-2337 AN-2497-0904 07-Apr-2009 Cambridge capacitor capacitors C2470 DS-1639 AN-2497 Cambridge Semiconductor C2473 C2472 C2471 AN-2337 cambridge
2004 - AN44060A

Abstract: an44060
Text: . Publication date: March 2004 Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . M Di ain sc te on na tin nc ue e/ d , . 23 Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . SFA00002AEB M Di ain sc te on na tin nc ue e/ d , supply Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on


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PDF AN44060A HSOP042-P-0400D SFA00002AEB AN44060A an44060
2002 - datasheet for new ic pwm supply voltage

Abstract: PWM IC overcurrent circuit protection MOSFET POWER AMP matsushita 278 M1 transistor list of n channel power mosfet mosfet power totem pole CIRCUIT n-channel 2.5v mosfet Chip Resistors Parasitic capacitance
Text: 0.3 0.1±0.1 ea s ht e v 4 DTC tp is :// it pa fo na llo so win 3 CT n ic g U .c R 2 o. L RT jp a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . · , ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . I Absolute Maximum Ratings Symbol , block Input offset voltage Low-level output voltage ea s ht e v tp is :// it pa fo na llo


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PDF AN8014S AN8014S datasheet for new ic pwm supply voltage PWM IC overcurrent circuit protection MOSFET POWER AMP matsushita 278 M1 transistor list of n channel power mosfet mosfet power totem pole CIRCUIT n-channel 2.5v mosfet Chip Resistors Parasitic capacitance
1998 - Not Available

Abstract: No abstract text available
Text: Transistor 2SC3933 Silicon NPN planer type For UHF amplification/mixing Unit: mm 2.1±0.1 , ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . (Ta=25°C) 0.2 0.3­0 +0.1 Unit µA µA ICBO IEBO hFE1 hFE2 , measurment circuit 1 Transistor The high-frequency output measurment circuit DUT C3 Z1 C2 C4 L1 L2 , Pl 120 80 40 0 0 20 40 60 80 100 120 140 160 ea s ht e v tp is :// it pa fo na llo so


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PDF 2SC3933
1998 - Not Available

Abstract: No abstract text available
Text: Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency power amplification , transfer ratio Collector to emitter saturation voltage Transition frequency ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m , circuit * Pulse measurement 1 Transistor The high-frequency output measurement circuit at , 0.5mA 50 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (°C) 2 ea s ht e v tp is :// it pa


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PDF 2SC4767
1998 - Not Available

Abstract: No abstract text available
Text: Transistor 2SC2851 Silicon NPN epitaxial planer type For high-frequency power amplification , output capacitance High-frequency output Overall efficiency Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . , *Refer to the PO measurment circuit 1 Transistor The high-frequency output measurement circuit , ) 120 100 IB=4.0mA Collector current IC (mA) Pl 0 25 50 75 100 125 ea s ht


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PDF 2SC2851
1998 - microcassette

Abstract: No abstract text available
Text: drift because of external power transistor · Provided with the motor stop function ; ICC=50µA or less at , 7 8 3 Buffer 4 5 6 1 GND 0.15 0.65 s Block Diagram ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 3 , Current Reference Voltage ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Symbol Ibias Istop Condition min. typ


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PDF AN6656, AN6656S AN6656 AN6656S AN6656 120mV) microcassette
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Small Signal Transistor Arrays , (sat) transistor used) · Low voltage drive · With 6 elements incorporated 0.4±0.1 14 13 12 11 10 9 8 , temperature Storage temperature Note) *: When the dissipation on one device is TC = 25°C Pl ea s ht e , for x. ma ht t m ion l . VCEO VEBO IC 1: Collector 2: Base 3: Collector 4: Base 5: Collector 6: Base , the built-in diode 2 Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a


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PDF 2002/95/EC) UNA0216 UN216)
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Small Signal Transistor Arrays , ° Features · Small and lightweight · Low power consumption (low VCE(sat) transistor used) · Built-in , device is TC = 25°C Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . VCEO VEBO IC 1: Emitter 2: Base 3 , . *1: Pulse measurement *2: Application to the built-in diode 2 Pl ea s ht e v tp is :// it pa


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PDF 2002/95/EC) UNA0206 UN206)
2001 - D8050

Abstract: No abstract text available
Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For digital circuit For switching 4 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95 , elements incorporated into one package. ( Transistor with built-in resistor) · Reduction of the mounting , Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Rating 50 50 Unit V V 1: Collector (Tr1) 2: Base (Tr2) 3


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PDF XN04390 D8050
2004 - Not Available

Abstract: No abstract text available
Text: Small Signal Transistor Arrays UNA0230 (UN230) Silicon PNP epitaxial planar type (2 elements , °C Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . -10 -10 -3 -4 10 10 3 4 V V A A V V A A ICP VCBO VCEO IC , resistance 2 Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Symbol VCBO VCEO ICBO hFE fT Conditions Min 10 Typ


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PDF UNA0230 UN230)
ignition module

Abstract: 2n2369 avalanche cdi ignition timing advance car cdi ignition cdi ignition irf740 application note ELECTRONIC CENTRIFUGAL SWITCH design of ignition and fuel system 800RPM cdi ignition circuit
Text: Gasoline engine ignition circuits represent a severe environment for semiconductor switches. A transistor , transistor . with relative reliability, safe operating area clamps were used, raising both cost and , starting. The bipolar transistor was therefore called upon typically to switch 6 amperes. To do so 207 , at 6000 RPM, 8 cylinder engine (32 watts for 4 mH coil and Darlington bipolar transistor ). (b , bipolar transistor ). The minimum value required can be demonstrated to be less than 2 millijoules


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PDF AN966: AN-969 ignition module 2n2369 avalanche cdi ignition timing advance car cdi ignition cdi ignition irf740 application note ELECTRONIC CENTRIFUGAL SWITCH design of ignition and fuel system 800RPM cdi ignition circuit
2007 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Small Signal Transistor Arrays , lightweight · Low power consumption (low VCE(sat) transistor used) · Low voltage drive · With 4 elements , the dissipation on one device is TC = 25°C Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . VCEO VEBO IC , : Pulse measurement *2: Application to the built-in diode 2 Pl ea s ht e v tp is :// it pa fo na


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PDF 2002/95/EC) UNA0217 UN217)
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