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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

HT 25-19 rf transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract: No abstract text available
Text: ratings: a. RF power, 200mW b. Peak IF current, 40mA LO Power Level 17 dBm Pin Configuration Port LO RF IF Gnd Ext. Case Gnd Not Used ht 6 3 2 1,4,5 - · 1 dB COMPR. +14 dBm typ. · E = [IP3(dBm)-LO , Specifications Electrical Specifications ADEX-10H Frequency MHz LO/ RF IF LO Power Level 17 dBm Max , -10H RF MHz 10.000 16.000 22.000 28.000 34.000 40.000 46.000 52.000 58.000 70.000 76.000 82.000 88.000 , 24.67 15.66 15.73 14.87 VSWR RF port VSWR LO port LO LO LO LO LO LO FREQ. +14 +17 +20 +14 +17 +20 (MHz


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PDF 200mW ADEX-10H 150MHz.
Not Available

Abstract: No abstract text available
Text: M ) ^133% 12.5% 2S% DOUBLE • SIDE COOUNO 60 T O 400 » S O TO Ht 40 ■H L


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PDF BP107, Amperes/500-1300 MAX/10
Thermocouple Type K material

Abstract: BS1843 Din 43714 Thermocouple Type K Thermocouple color Thermocouple type J PT100 Thermocouple temperature color codes cable k type thermocouple sensor Thermocouple type k PT100 NICR-NI thermocouple
Text: SUPPORT, DUPLEX SIZE 3.0mm 4.5mm 6.0mm Standard CA-072 CA-073 CA-074 SIMPLEX HT -053 HT -058 HT -050 N/A DUPLEX HT -056 HT -059 HT -054 Colour coded terminal blocks are for in-head


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2001 - Not Available

Abstract: No abstract text available
Text: Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise , 532 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 0 to 0.1 High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini , | S21e |2 Transistor hFE - IC 240 14 2SC5473 fT - IC VCE=3V 10 | S21e |2 - IC Forward


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PDF 2SC5473
MC14502

Abstract: HT 12E APPLICATION ht 12e for data transmission using rf HT-12E of HT 12E toggle switch 3A 250V AC FM Module am transmitter using transistor
Text: RF remote security/controller system. It is a two channel decoder which can accept signals from a number of RF receiver modules e.g. RS stock no. 627-756; please refer to the current RS catalogue for a , Select output type (for channel A) ON OFF Relay output available Transistor output available 2 Select output type (for channel B) ON OFF Relay output available Transistor output , key fobs) Holtek HT -12E chips 4 Learn for channel B ON OFF Learn inhibited (operating


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PDF 200mA 625mW 10kHz MC14502 HT-12E MC14502 HT 12E APPLICATION ht 12e for data transmission using rf of HT 12E toggle switch 3A 250V AC FM Module am transmitter using transistor
2002 - 2SC5557

Abstract: No abstract text available
Text: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier I , RF amplification of a portable telephone and pager 0.33+0.05 ­0.02 3 0.10+0.05 ­0.02 M Di , Collector output capacitance Gain bandwidth product Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 30 mA °C °C , 0.001 0.01 0.1 1 10 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s


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PDF 2SC5557 2SC5557
Not Available

Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57737 144-148MHz, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm PIN : © P in : RF IN PU T (DVCC1 : 1st. DC SUPPLY ® V C C 2 : 2nd. DC SUPPLY ®PO : RF O U TPU T ® G N D : FIN H2 ABSO LUTE MAXIMUM RATINGS , M IT Q I IR1CMI MITSUBISHI RF POWER MODULE M57737 144-148MHz, 12.5V, 30W, FM MOBILE RADIO , 70 Ö D O< «• — «O 100 10 7 5 " £E O CC _j 50 g hT 3 30


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PDF M57737 144-148MHz,
4cx250

Abstract: 741p TRANSISTOR GUIDE RSGB EHT COIL transformer amplifier 4cx250b 4cx250b qro linear for two metres precision rectifier using 741 1N414S
Text: usually present little difficulty from the rf point of view—there being several well-proved designs in , . The items on the rear apron are (I io r) mains inlet, mains fuse, eht connector, eht contactor skt, rf , . No 1 screen current 3. Bias voltage S. No 2 screen current 4. No 1 screen voltage 9. RF voltage 5 , which ensures that the cathbdes warm up properly before ht can be applied. Earthing the Standby-2 line , presence of more than about 500V on the incoming eht line switches ht onto the screen shunt stabilizer


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PDF 4CX250B 4cx250 741p TRANSISTOR GUIDE RSGB EHT COIL transformer amplifier 4cx250b qro linear for two metres precision rectifier using 741 1N414S
1997 - mitsumi 455khz

Abstract: No abstract text available
Text: st -in in de for x. ma ht t m ion l . AM Signal RF input pin Differential amp. base input 19 21 12 , ° 7.62±0.25 19.1±0.3 s Block Diagram Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 22-Lead Shrunk SDIP , 24 17 44 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . max. 25 VO 16 ­4 7 Smax. VIND GV VO = 5mVrms 4.5 13 27


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PDF AN7002K, AN7002S AN7002K AN7002S AN7002K mitsumi 455khz
2002 - Not Available

Abstract: No abstract text available
Text: Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planar type Unit: mm For low-voltage , low noise of 1.8 dB at 3 V · Optimum for RF amplification of a portable telephone and pager · SS-Mini , frequency Noise figure Pl Forward transfer gain ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Symbol Rating Unit , ) 2 Pl ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on


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PDF 2SC5474
mc2833 application

Abstract: B199KN-T1055Z MC2833
Text: 16.605 M H z C l = 30 pF C0 = 6.1 pF RS = 10 n M ax 39 pF Ht t pF - - O RF O ut - O Collector , External Parts R equired · · - 3 0 dBm P ow er O u tp u t to 60 MHz Using D irect RF O u tp u t + 10 dBm , RF *}Osc 2Ü ] ! ' RF 2 3 O utp m IT r2 I Tr 2 LL. ü lI Em itter Base T r1nr I , 2.9 Max 4.3 Unit mA FM MODULATOR O utput RF Voltage (fQ = 16.6 MHz) O utput DC Voltage (No , (f0 = 16.6 MHz) (Vin = 0 V to 2.0 V) Vout RF Vdc SEN Fdev 14 14 3.0 14 3.0 14 60 2.2 7.0 - 3.0 - 90


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PDF MC2833 MC2833 B199SN-T1048Z B199KN-T1055Z mc2833 application B199KN-T1055Z
2002 - Not Available

Abstract: No abstract text available
Text: Transistor 2SC5472 Silicon NPN epitaxial planar type Unit: mm (0.425) For low-voltage , low noise of 1.8 dB at 3 V · Optimum for RF amplification of a portable telephone and pager · S-Mini , Collector output capacitance Transition frequency Noise figure Forward transfer gain Pl ea s ht e v tp , . ma ht t m ion l . Rating Unit V V V 0.9±0.1 0.9+0.2 ­0.1 1: Base 2: Emitter 3: Collector , 0 0.1 0.3 1 3 Collector current IC (mA) 2 Pl ea s ht e v tp is :// it pa fo na


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PDF 2SC5472
2011 - Not Available

Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile , 1 5 1 RF Input (P in) Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 • Pout>33W, T>50% @ VDD=12.5V, VGG=5V, Pin=10mW â , Size: 46 x 14.4 x 6.3 mm RF Ground (Case) PACKAGE CODE: H57 RoHS COMPLIANCE • RA33H1516M1


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PDF RA33H1516M1 154-164MHz RA33H1516M1 33watt 164MHz
2013 - 2n3749

Abstract: No abstract text available
Text: 2N3749 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated , frequency inverters Converters Linear amplifiers High speed switching regulated power supplies RF power , exception of the hexagon, is optional within cylinder defined by CD1 and HT . 6. Terminal 4 can be , CH HT CD CD1 HF E E1 A1 OAH SL SU φT φT1 SD Z Z1 Inch Millimeters Min Max Min


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PDF 2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A 2n3749
2013 - Not Available

Abstract: No abstract text available
Text: 2N3749 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is , High speed switching regulated power supplies RF power supplies MAXIMUM RATINGS Parameters/Test , contour, with the exception of the hexagon, is optional within cylinder defined by CD1 and HT . 6 , -0328, Rev. 1 (11/19/13) Dimension Symbol CH HT CD CD1 HF E E1 A1 OAH SL SU φT φT1 SD Z


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PDF 2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A
L66C

Abstract: C1f TRANSISTOR ECG906 transistor HJ 388 MAC15
Text: ampllflen • VHF mlxirs • Multlfurwltoo combinations - RF /MIxer/Otcillator; Convetter/IF • IF , transistor . 300 Total package. 600 For T^ > 55°C Derate at: 5 Temperature Range: Operating , following ratings apply for each transistor in the devices Coilector-to-EmitterVoltage, VCeo . 15 V , mA •The collactor of «ach transistor Is Isolated -from th« substrata by an Integrai dlod». The , Isolation between transistors and to provide for normal transistor action. CHARACTERISTICS SYMBOLS TEST


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PDF ECG906 6CQ906 T-74-09-01 ECG906 L66C C1f TRANSISTOR transistor HJ 388 MAC15
J115 mosfet

Abstract: No abstract text available
Text: RF POWER MOSFET r* hT 7 >- < I_ I MAXIMUM RATINGS Rating D rain-Source , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors , R = 30:1, All Phase Angles At Frequency of Test) (1) Note each transistor chip measured separately (2) Both transistor chips operating in push-pull amplifier M O T O R O L A W I R E L E S S S E M , ^ C18 2 ^ -K -A - rf OUTPUT 0.325" M ICRO STRIP DETAIL 0.15" 0.15" 0,325


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PDF 10pFD 50Vdc 1N5347B, RF177 J115 mosfet
Not Available

Abstract: No abstract text available
Text: GND for others than the output transistor . Minimum potential of output transistor is at RF pin , Ordering number : ENA0433A LB11988D Monolithic Digital IC Fan Motor Driver ht t p://onse , Conditions min VCC supply current ICC RL = 560Ω (Y) VOsat1 typ IO = 500mA, Rf = 0.5â , Sink+Source (with saturation prevention) V VOsat2 IO = 1.0A, Rf = 0Ω, Sink+Source (with saturation , current Ib(FR) -5 V µA Current limit LIM pin current limit level ILIM Rf = 0.5â


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PDF ENA0433A LB11988D LB11988D A0433-8/8
2004 - mosfet sot23-6 maxim

Abstract: No abstract text available
Text: 6-pin thin SOT23 and 6-pin 3mm x 3mm thin DFN packages. An internal PMOS pass transistor maintains , transistor , an internal feedback voltagedivider, and a power-good comparator. The error amplifier compares , ) P-channel MOSFET pass transistor . Unlike similar designs using PNP pass transistors, P-channel MOSFETs , current in dropout when the pass transistor saturates and use high base-drive currents under large loads , controls the pass transistor 's gate voltage, limiting the output current to 850mA (typ). If the output


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PDF 500mA MAX1589 175mV 21-0137I T633-2* MAX1589ETT300 MAX1589ETT075 MAX1589ETT150 mosfet sot23-6 maxim
2013 - MXCHIP

Abstract: EMZ3048C
Text: /RTS EMW316x advantages 25 ht ig ll r IP 80 H 15 A 100 s 120 RF , ed se rv ig ht s re MXCHIP Wireless Products M XC H IP A ll r , A ll r ig ht s re se rv ed Wi-Fi/IEEE 802.11 , ll r ig ht Bandwidth Cost 上海庆科信息技术有限公司 Interoperability , ™å…¬å¸ re ht s Cloud service client ig MXCHIP Wi-Fi Module WPS Bonjour â


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PDF EMF2104 56MHz 26kbps 53kbps 400Khz MXCHIP EMZ3048C
2013 - Not Available

Abstract: No abstract text available
Text: and RF Digitizer variant. Frame Format OFDM, HT and VHT Channel Bandwidth POWER HR/DSSS , characterising WLAN OFDM, DSSS and DSSSOFDM RF signals during design validation or production test. The software is designed for use in conjunction with the Aeroflex PXI 3000 Series of RF modular instruments and , .0 Highlights • Bench-top R&D and production ready ATE RF performance verification tools • Multi , R&D or production • All DSSS, OFDM, non HT , HT and VHT frame formats • All channel


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PDF 11ac/D4
DIODE JS.6

Abstract: RCA-2N6093 DIODE JS.9 CG 332 diode hf power amplifiers 2-30 mhz 100 watt hf transistor 12 volt 2N6093 92CS-I7692 RCA-2N609 transistor R1Z
Text: ) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode Silicon N-P-N Device for High-Gain Linear , -2N6093* is an epitaxial silicon n-p-n planar transistor of the "overlay" emitter-electrode construction. This , applications to provide high power in class A or class B rf amplifier service. The device is intended for 2 , . DIODE CURRENT (DC, Max.). ' TRANSISTOR DISSIPATION: At case temperatures up to 75°C At case , Min. Max. RF Power Input* (See Fig. 12): Average PlE 28 37.5 30 20 _ 1.88 W Peak envelope (PEP


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PDF 2N6093 30-MHz RCA-2N6093* DIODE JS.6 RCA-2N6093 DIODE JS.9 CG 332 diode hf power amplifiers 2-30 mhz 100 watt hf transistor 12 volt 2N6093 92CS-I7692 RCA-2N609 transistor R1Z
1998 - DIN4762

Abstract: "beryllium oxide" transistor BUT 12 UNC4-40
Text: TECHNICAL PUBLICATION Thermal aspects of flange-mounted r.f . power transistors TECHNICAL NOTE 141 Philips Semiconductors Thermal aspects of flange-mounted r.f . power transistors CONTENTS , Thermal aspects of flange-mounted r.f . power transistors 1 Technical publication Technical Note 141 INTRODUCTION R.F . power transistors often operate under conditions of severe mismatch. This often increases , near the crystal of a high power transmitting transistor . In the crystal itself, in the base area a few


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PDF SCA57 DIN4762 "beryllium oxide" transistor BUT 12 UNC4-40
2004 - SOT23-6 PMOS

Abstract: T633-2 t633 ht sot23-6 SOT-23 MOSFET P-CHANNEL a1 1- mark A2 SOT-23 mosfet Z6 SOT23
Text: 6-pin thin SOT23 and 6-pin 3mm x 3mm thin DFN packages. An internal PMOS pass transistor maintains , transistor , an internal feedback voltagedivider, and a power-good comparator. The error amplifier compares , ) P-channel MOSFET pass transistor . Unlike similar designs using PNP pass transistors, P-channel MOSFETs , current in dropout when the pass transistor saturates and use high base-drive currents under large loads , controls the pass transistor 's gate voltage, limiting the output current to 850mA (typ). If the output


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PDF 500mA MAX1589 175mV MAX1589ETT130+ MAX1589ETT130 MAX1589ETT130-T MAX1589ETT150-T MAX1589ETT180-T SOT23-6 PMOS T633-2 t633 ht sot23-6 SOT-23 MOSFET P-CHANNEL a1 1- mark A2 SOT-23 mosfet Z6 SOT23
RT1N14HX

Abstract: RT1P14HC RT1P14HM RT1P14HU RT1P14HX oe1t
Text: RT1P14HX SERIES ( Transistor ) Transistor WïUi Resistor For Switching Appli cation Silicon PNP Epitaxial Type DESCRIPTION RT1P14HX is a out chip transistor with built-ir bias resistor.MPN type is RT1N14HX FEATURE ■Built-in bias resistor (R1=10kO R2 = 47kfì) APPLICATION Inverted circuit.switching , RTlPHHC i HT 1 LT> : it y JEITA:-JEDEC- Terminal Connector <2> Rf /R1 Resistance


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PDF RT1P14HX RT1N14HX RT1P14HT2 RT1P14HM SC-70 RT1N14HX RT1P14HC RT1P14HM RT1P14HU oe1t
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