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HSU276(TRF-E) Renesas Electronics Corporation Chip1Stop 2,400 $1.05 $0.86
HSU276ATRF-E Renesas Electronics Corporation Rochester Electronics 66,000 $0.05 $0.04

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HSU276 datasheet (10)

Part Manufacturer Description Type PDF
HSU276 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original PDF
HSU276 Renesas Technology Silicon Schottky Barrier Diode for Mixer Original PDF
HSU276 Renesas Technology Silicon Schottky Barrier Diode for Detector and Mixer Original PDF
HSU276 Others High Frequency Device Data Book (Japanese) Scan PDF
HSU276 Others The Diode Data Book with Package Outlines 1993 Scan PDF
HSU276A Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original PDF
HSU276A Renesas Technology Silicon Schottky Barrier Diode for Mixer Original PDF
HSU276A Renesas Technology Silicon Schottky Barrier Diode for Mixer Original PDF
HSU276-E Renesas Technology DIODE SCHOTTKY 3V 0.03A 2URP Original PDF
HSU276TRF Hitachi Semiconductor DIODE SCHOTTKY V 0.03A 2URP T/R Original PDF

HSU276 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - HITACHI DIODE

Abstract: HSU276 DSA003636
Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev. 6 Jul. 1996 Features · , HSU276 3 URP Outline 1 3 Cathode mark Mark 2 1. Cathode 2. Anode HSU276 , : *1 1. Failure criterion ; IR 100µA at VR = 0.5 V Rev.6, Jul. 1996, page 2 of 5 HSU276 , .3 Capacitance Vs. Reverse voltage Rev.1, Jan. 2001, page 3 of 5 HSU276 Package Dimensions Unit : mm , ) URP - - 0.004 HSU276 Disclaimer 1. Hitachi neither warrants nor grants licenses of any


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PDF HSU276 ADE-208-078F HITACHI DIODE HSU276 DSA003636
Not Available

Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F(Z) Rev 6 Features , Mark Package Code HSU276 3 URP Outline % Cathode mark Mark I1 1 :00: 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Value Unit , €” Note: 2 30 V R= 0.5V 1. Failure criterion ; lR> lOO^A at V R= 0.5 V HITACHI HSU276 Main Characteristic HITACHI 3 HSU276 Package Dimensions Unit : mm L Cathode Mark L O


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PDF HSU276 ADE-208-078F 200pF
Not Available

Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F(Z) Rev 6 June 1996 , density surface mounting and high speed assembly. Ordering Information Type No. HSU276 Laser Mark , pD 2 HSU276 Absolute Maximum Ratings (Ta = 25° C) Item Reverse voltage Average rectified , \ 1. Failure criterion ; IR > 10OjiA at V R =0.5 V HSU276 Main Characteristic Forward voltage , Vs. Reverse voltage HSU276 Package Dimensions Unit : mm Cathode Mark E^COO 1.7+0.15 1


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PDF HSU276 ADE-208-078F 200pF 10OjiA
1998 - Hitachi DSA002789

Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev 6 Features · High forward , and high speed assembly. Ordering Information Type No. HSU276 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 3 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25 , pulse. 1. Failure criterion ; I R 100µA at VR = 0.5 V 2 HSU276 Main Characteristic -2 10 , HSU276 Package Dimensions Unit : mm Cathode Mark 1.25±0.15 0.3±0.15 3 1 1.7±0.15 2.5±0.15 2 1


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PDF HSU276 ADE-208-078F HSU276 Hitachi DSA002789
1999 - RS323

Abstract: No abstract text available
Text: HSU276 Spice parameter * Model generated on Oct 22, 96 * MODEL FORMAT: SPICE3, PSPICE apply. * UCB DIODE Model .MODEL HSU276 D +IS=2.0189E-6 +BV=3 +VJ=0.3 +KF=0 +XTI=3 +TT=1.0E-9 +RS=3.23 +IBV=3.146511E-5 +M=0.19 +AF=1 +EG=1.17 +N=1.08 +CJO=7.8E-13 +FC=0.5 * END of HSU276 (Schottky barrier diodes for detectors & mixers) * IS: Saturation current, Unit:A * BV: Rev.breakdown voltage, Unit:V * VJ: Junction potential, Unit:V * KF: Flicker noise coefficient * XTI: Isat temperature exp. * TT: Transit time


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PDF HSU276 0189E-6 146511E-5 8E-13 HSU276 RS323
1998 - Hitachi DSA002712

Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev 6 Features · High forward , and high speed assembly. Ordering Information Type No. HSU276 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 3 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25 , pulse. 1. Failure criterion ; IR 100µA at VR = 0.5 V 2 HSU276 Main Characteristic 10 -2 , Vs.Reverse voltage 3 HSU276 Package Dimensions Unit : mm Cathode Mark 1.25±0.15 0.3±0.15 3 1


Original
PDF HSU276 ADE-208-078F HSU276 Hitachi DSA002712
2001 - HSU276

Abstract: No abstract text available
Text: products contained therein. HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev , No. Laser Mark Package Code HSU276 3 URP Pin Arrangement 1 3 Cathode mark Mark 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , .6, Jul. 1996, page 2 of 2 HSU276 Main Characteristic -2 10 -3 10 10 Reverse current , HSU276 Package Dimensions Unit : mm 3 1.25±0.15 Cathode Mark 1.7±0.15 2.5±0.15 0.3±0.15


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PDF
Hitachi DSA00773

Abstract: HSU276 ADE-208-078F
Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev 6 June 1996 Features · , Package Code HSU276 3 URP Outline 1 3 Cathode mark Mark 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR , 1. Failure criterion ; IR 100µA at VR =0.5 V HSU276 Main Characteristic -2 10 -3 10 , R (V) Fig.3 Capacitance Vs. Reverse voltage Fig.2 Reverse current Vs. Reverse voltage HSU276


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PDF HSU276 ADE-208-078F Hitachi DSA00773 HSU276
1999 - HSU276

Abstract: Hitachi DSA0045
Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev 6 Jul. 1996 Features · High forward current, Low capacitance. · Ultra small Resin Package (URP) is suitablefor high density , HSU276 3 URP Outline 1 3 Cathode mark Mark 2 1. Cathode 2. Anode HSU276 , Note: 2 1. Failure criterion ; IR 100µA at VR = 0.5 V HSU276 Main Characteristic -2 , . Reverse voltage 3 HSU276 Package Dimensions Unit : mm 3 1.25±0.15 Cathode Mark


Original
PDF HSU276 ADE-208-078F HSU276 Hitachi DSA0045
2003 - Not Available

Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0141-0700Z (Previous: ADE , Type No. HSU276 Laser Mark 3 Package Code URP Pin Arrangement Cathode mark Mark 1 3 2 1. Cathode 2. Anode Rev.7.00, Nov.10.2003, page 1 of 4 HSU276 Absolute Maximum Ratings (Ta = 25 , .10.2003, page 2 of 4 HSU276 Main Characteristics 10­1 10­2 Reverse current IR (A) Forward current , Fig.3 Capacitance vs. Reverse voltage Rev.7.00, Nov.10.2003, page 3 of 4 HSU276 Package


Original
PDF HSU276 REJ03G0141-0700Z ADE-208-078F) HSU276
Not Available

Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features · High forward current, Low capacitance. · Ultra small Eesin Package (URP) is suitable for surface mount design. Outline Cathode mark Mark Ordering Information Type No. HSU276 1CE Package Code URP H2 1. Cathode 2. Anode Laser Mark 3 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average , . * Failure criterion ; lR > 1 0OjiA at V r =0.5 V 270 HSU276 271


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PDF HSU276 HSU276 200pr
2003 - HSU276

Abstract: No abstract text available
Text: HSU276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0141-0700Z (Previous: ADE , Information Type No. Laser Mark Package Code HSU276 3 URP Pin Arrangement 1 3 Cathode mark Mark 2 1. Cathode 2. Anode Rev.7.00, Nov.10.2003, page 1 of 4 HSU276 Absolute , HSU276 Main Characteristics 10­2 10­2 10­3 10­3 Ta = 75°C Ta = 25°C 10­4 10­5 , voltage VR (V) 5.0 Fig.2 Reverse current vs. Reverse voltage HSU276 Package Dimensions As of


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PDF HSU276 REJ03G0141-0700Z ADE-208-078F) HSU276
2003 - HSU276

Abstract: No abstract text available
Text: . HSU276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0141-0700Z (Previous: ADE , Information Type No. Laser Mark Package Code HSU276 3 URP Pin Arrangement 1 3 Cathode mark Mark 2 1. Cathode 2. Anode Rev.7.00, Nov.10.2003, page 1 of 4 HSU276 Absolute , HSU276 Main Characteristics 10­2 10­2 10­3 10­3 Ta = 75°C Ta = 25°C 10­4 10­5 , voltage VR (V) 5.0 Fig.2 Reverse current vs. Reverse voltage HSU276 Package Dimensions As of


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PDF
HSK277

Abstract: No abstract text available
Text: .115 HSS104.117 HSU83 .139 HSU88 . HSU276


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PDF HRW0502A HRW0503A HRW0702A HRW0703A HRW1002A HRW1002B HRW2502A HRW2502B HSK277
HVU12

Abstract: pin diode do35 HSM8 1SS106 HSM126S DO-35 rectifier Zener diode 1N4148 1SS86 1SS174 1S2076A
Text: HSM198S HSM276S HSM276SR SMD2 URP HSU88 HSU276 UFP ERP HSE11'2 HSC276 Insertion Type DO-35 1SS86


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PDF DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C 1N4148 1S2075® 1S2076 HVU12 pin diode do35 HSM8 1SS106 HSM126S DO-35 rectifier Zener diode 1N4148 1SS86 1SS174 1S2076A
MA717

Abstract: MA4S713 MA2S784 HSU88 HSU276 HSS102 610C 420C ma741 Dan 169
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 1MA721Â MA744 MA745 MA717 610C 420C ma741 Dan 169
1SS106

Abstract: 1SS119 1SS172 1SS108
Text: No. HSU119 HSU276 HSU277 HVB14S HVC131 HVC132 HVC133 HVC200A HVC202A HVC300A HVC306A HVC3Q8A HVC317B


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PDF 1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS106 1SS119 1SS172 1SS108
ma741

Abstract: MA721WA MA700 MA4S713 MA2S784 HSU88 HSU276 HSS102 610C 420C
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 890-45MHz) MA740 MA741 MA721WA MA700 610C 420C
KT3030

Abstract: MA700 MA4S713 MA2S784 HSU88 HSU276 HSS102 610C 420C ma741
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 890-45MHz) MA740 MA741 KT3030 MA700 610C 420C
610A

Abstract: ma741 MA700A MA700 MA4S713 MA2S784 HSU88 HSU276 HSS102 610C
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 890-45MHz) MA740 MA741 610A MA700A MA700 610C
439B

Abstract: MA700A MA700 MA4S713 MA2S784 HSU88 HSU276 HSS102 610C 420C
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 20MIN 20MIN 439B MA700A MA700 610C 420C
MA704WA

Abstract: MA700 MA4S713 MA2S784 HSU88 HSU276 HSS102 610C 420C ma741
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 MA743 MA704AÂ MA721Â MA744 MA704WA MA700 610C 420C ma741
iss86

Abstract: 1SS119
Text: issæ 1SS165 1SS174 HSU88 HSU276 HSC276 HSM88AS HSM88ASR HSM88WA HSM88WK HSM198S HSM198SR HSM276S r


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PDF DO-35 1SS108 1SS196 1SS199 DO-35 1SS82 1SS83 HSS81 HSS82 HSS83 iss86 1SS119
MA704WA

Abstract: MA700 MA4S713 MA2S784 HSU88 HSU276 HSS102 610C 420C ma741
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 MA745WA MA745WK MA704WA MA700 610C 420C ma741
kt 207

Abstract: ma741 MA4S713 MA2S784 HSU88 HSU276 HSS102 610C 420C MA704WA
Text: 420C HSU276 HS 3 30 35 0. 5 50 0. 5 0. 85 0. 5 420C MA 2 S 7 2 8 KT 30 30 150 30* 30 1 0. 3


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PDF HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 81MIN 26MAX fiJ44 kt 207 ma741 610C 420C MA704WA
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