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Renesas Electronics Corporation
HSC276TRF-E SILICON SCHOTTKY BARRIER DIODE FOR DETECTOR AND MIXER
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HSC276 datasheet (9)

Part Manufacturer Description Type PDF
HSC276 Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original PDF
HSC276 Kexin Silicon Schottky Barrier Diode Original PDF
HSC276 Renesas Technology Silicon Schottky Barrier Diode for Detector and Mixer Original PDF
HSC276 Renesas Technology DIODE SCHOTTKY V 0.03A 2SC-79 Original PDF
HSC276 Renesas Technology Silicon Schottky Barrier Diode for Mixer Original PDF
HSC276 TY Semiconductor Silicon Schottky Barrier Diode - SOD-523 Original PDF
HSC276A Hitachi Semiconductor Schottky Barrier Diodes for Detection and Mixer Original PDF
HSC276A Renesas Technology DIODE SCHOTTKY 5V 0.03A 2UFP Original PDF
HSC276A Renesas Technology Silicon Schottky Barrier Diode for Mixer Original PDF

HSC276 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Hitachi DSA00772

Abstract: HSC276
Text: ADE-208-421(Z) HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features Outline · High forward current, Low capacitance. · Ultra small Flat Package (UFP , . Laser Mark Package Code HSC276 C2 1. Cathode 2. Anode UFP Absolute Maximum Ratings , 1 pulse. HSC276 -2 10 10 -3 Reverse current I R (A) Forward current I F (A , 10 -2 10 5 HSC276 Unit: mm Package Dimensions Cathode Mark 1 Cathode 2 Anode


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PDF ADE-208-421 HSC276 SC-79 Hitachi DSA00772 HSC276
Not Available

Abstract: No abstract text available
Text: HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter HITACHI ADE-208-421A (Z) R ev. 1 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is , HSC276 C2 UFP Outline Cathode mark Mark 1C !C2! H 2 1. Cathode 2. Anode HSC276 , > 10O^iA at VR= 0.5V HITACHI VR= 0.5V HSC276 HITACHI 3 HSC276 4 HITACHI HSC276 Package Dimensions Unit: mm Cathode Mark / - C2 1.2 ±0.10 1.6 ± 0.10 o O o LT


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PDF HSC276 ADE-208-421A 200pF, SC-79
1998 - HSC276

Abstract: c2 mark Hitachi DSA002712
Text: HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter ADE-208-421A (Z) Rev. 1 , mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item , criterion; IR 100µA at VR = 0.5V 2 HSC276 10 ­2 Forward current I F (A) 10 ­3 10 ­4 , 1 4 3 2 Reverse voltage VR (V) 5 Fig.2 Reverse current Vs. Reverse voltage 3 HSC276


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PDF HSC276 ADE-208-421A HSC276 SC-79 c2 mark Hitachi DSA002712
2001 - HSC276

Abstract: diode hitachi schottky DSA003642
Text: HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev. 1 Dec. 1998 Features · , design. Ordering Information Type No. Laser Mark Package Code HSC276 C2 UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25 , at VR =0.5 V Rev.1, Dec. 1998, page 2 of 5 HSC276 Main Characteristic -2 10 -3 10 , . 1998, page 3 of 5 HSC276 Package Dimensions Unit : mm Cathode Mark C2 1.2 ± 0.10 1.6 ± 0.10


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PDF HSC276 ADE-208-421A HSC276 diode hitachi schottky DSA003642
Not Available

Abstract: No abstract text available
Text: ADE-208-421(Z) HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter HITACHI Features · High forward current, Low capacitance. · Ultra small Flat package (UFP) is suitable for surface , . HSC276 Laser Mark C2 Package Code UFP 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25 , reverse * Failure criterion ; Ir > 100|jA at VR =0.5 V í HSC276 10 -2 < c c 10 -3 , 10 HSC276 Package Dimensions Unit: mm Cathode Mark | C 2 in o " o T o o -H ·H CO


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PDF ADE-208-421 HSC276 -55to 200pF HSC276 SC-79
1999 - RS323

Abstract: No abstract text available
Text: HSC276 Spice parameter * Model generated on Oct 22, 96 * MODEL FORMAT: SPICE3, PSPICE apply. * UCB DIODE Model .MODEL HSC276 D +IS=2.0189E-6 +BV=3 +VJ=0.3 +KF=0 +XTI=3 +TT=1.0E-9 +RS=3.23 +IBV=3.146511E-5 +M=0.19 +AF=1 +EG=1.17 +N=1.08 +CJO=7.8E-13 +FC=0.5 * END of HSC276 (Schottky barrier diodes for detectors & mixers) * IS: Saturation current, Unit:A * BV: Rev.breakdown voltage, Unit:V * VJ: Junction potential, Unit:V * KF: Flicker noise coefficient * XTI: Isat temperature exp. * TT: Transit time


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PDF HSC276 0189E-6 146511E-5 8E-13 HSC276 RS323
1999 - Hitachi DSA002789

Abstract: No abstract text available
Text: ADE-208-421(Z) HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, converter Rev. 0 Nov. 1995 Features · High forward current, Low capacitance. · Ultra small Flat Package (UFP) is suitable , Information Type No. HSC276 Laser Mark C2 Package Code UFP Absolute Maximum Ratings (Ta = 25°C) Item , ; IR 100µA at VR =0.5 V HSC276 10 -2 10 -2 Forward current I F (A) 10 -4 , HSC276 Package Dimensions Unit: mm Cathode Mark C2 1.2 ± 0.10 1.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10


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PDF ADE-208-421 HSC276 HSC276 SC-79 Hitachi DSA002789
MARK SD DIODE

Abstract: No abstract text available
Text: HSC276 Silicon Schottky Barrier Diode for Tuner Mixer, Converter Features · · Outline Cathode mark High forward current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP 1>=f LJ I Mark 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item R e verse voltage , pulse. * Failure criterion ; Ip > 100|iA at V r =0.5 V 247 HSC276 < c cc c 0) 3 O o


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PDF HSC276 HSC276 MARK SD DIODE
2001 - HSC276

Abstract: No abstract text available
Text: products contained therein. HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev , HSC276 C2 UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 , Notes 1. Failure criterion ; IR 100µA at VR =0.5 V Rev.1, Dec. 1998, page 2 of 2 HSC276 Main , . Reverse voltage Rev.1, Dec. 1998, page 3 of 3 HSC276 Package Dimensions Unit : mm Cathode Mark , -79 0.0016 HSC276 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi


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PDF
2003 - HSC276

Abstract: No abstract text available
Text: HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE , Package Code HSC276 C2 UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item , Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main Characteristics 10­2 10­2 10­3 10­3 , . Reverse voltage HSC276 Package Dimensions As of January, 2003 1.2 ± 0.10 0.13 ± 0.05 1.6


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PDF HSC276 REJ03G0134-0200Z ADE-208-421A) HSC276
1999 - HSC276

Abstract: Hitachi DSA0047
Text: HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features · , design. Ordering Information Type No. Laser Mark Package Code HSC276 C2 UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25 , at VR =0.5 V 2 HSC276 Main Characteristic -2 -3 10 10 -4 10 10 -2 , voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HSC276 Package Dimensions Unit : mm


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PDF HSC276 ADE-208-421A HSC276 Hitachi DSA0047
2003 - HSC276

Abstract: No abstract text available
Text: . HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE , Package Code HSC276 C2 UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item , Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main Characteristics 10­2 10­2 10­3 10­3 , . Reverse voltage HSC276 Package Dimensions As of January, 2003 1.2 ± 0.10 0.13 ± 0.05 1.6


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PDF
2003 - Not Available

Abstract: No abstract text available
Text: HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE , (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 , .10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified , criterion ; IR 100 µA at VR = 0.5 V Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main , Rev.2.00, Nov.10.2003, page 3 of 4 HSC276 Package Dimensions As of January, 2003 Unit: mm


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PDF HSC276 REJ03G0134-0200Z ADE-208-421A) HSC276
Not Available

Abstract: No abstract text available
Text: Product specification HSC276 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features High forward current, Low capacitance. + +0.1 0.6-0.1 - Ultra small Flat Package (UFP) is suitable for surface mount design. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e V o lta g e VR 3 V A v e ra g e re c tifie d c u rre n t IO


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PDF HSC276 OD-523 07max 77max 200pF
marking c2 diode

Abstract: diode marking c2 marking c2 ultra low forward voltage diode HSC276 SOD523 marking c2 MARKING C2 SOD523
Text: Diodes SMD Type Silicon Schottky Barrier Diode HSC276 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features High forward current, Low capacitance. + +0.1 0.6-0.1 - Ultra small Flat Package (UFP) is suitable for surface mount design. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e V o lta g e VR 3 V A v e ra g e re c


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PDF HSC276 OD-523 07max 77max 200pF marking c2 diode diode marking c2 marking c2 ultra low forward voltage diode HSC276 SOD523 marking c2 MARKING C2 SOD523
HSK277

Abstract: No abstract text available
Text: . 355 HSB88WS. 245 HSC276 . 247 HSC277


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PDF HRW0502A HRW0503A HRW0702A HRW0703A HRW1002A HRW1002B HRW2502A HRW2502B HSK277
HVU12

Abstract: pin diode do35 HSM8 1SS106 HSM126S DO-35 rectifier Zener diode 1N4148 1SS86 1SS174 1S2076A
Text: HSM198S HSM276S HSM276SR SMD2 URP HSU88 HSU276 UFP ERP HSE11'2 HSC276 Insertion Type DO-35 1SS86


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PDF DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C 1N4148 1S2075® 1S2076 HVU12 pin diode do35 HSM8 1SS106 HSM126S DO-35 rectifier Zener diode 1N4148 1SS86 1SS174 1S2076A
iss86

Abstract: 1SS119
Text: issæ 1SS165 1SS174 HSU88 HSU276 HSC276 HSM88AS HSM88ASR HSM88WA HSM88WK HSM198S HSM198SR HSM276S r


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PDF DO-35 1SS108 1SS196 1SS199 DO-35 1SS82 1SS83 HSS81 HSS82 HSS83 iss86 1SS119
1SS106

Abstract: 1SS119 1SS172 1SS108
Text: HRW2502A © HHW25Q2A© HRW2S02B HSB83J HSB88WS HSB123 HSB124S-J HSB2836 HSB2838 HSC276 HSC277 HSK83 HSK110


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PDF 1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS106 1SS119 1SS172 1SS108
diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: HVU316 HVB27WK HVM27WK HVM16 HVR100 HVU308A HSM2692 HSM2693A HSM2694 HSC277 HSU277 HSC276


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PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
2000 - 74ls111

Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
Text: HSB0104YP HSB226S HSB226YP HSB276AS HSB276S HSB83YP HSB88AS HSB88WA HSB88WS HSB88YP HSC226 HSC276 HSC276A , tuner_presentation Diodes\Simulation Model Data\HS Series HSC119 HSC276 HSM126S HSM198S HSM2836C HSM2838C HSU119


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PDF Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
FC54M

Abstract: FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
Text: 1SS315 MA77 1SS316/317 HSM2692 HSM2693A HSM2694 HSK110 HSK277 HSC277 HSU277 HSC276 HSU276


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PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
2000 - diode 368b

Abstract: HUV132 HUV131 HVC376B 358B diode varicap 5.8 Ghz varicap diode hitachi diode diodes varicap 0v c05 10 48 diode
Text: HSU88 HSU227 HSC276 [Vf (V)] max [0.58] (0.35) 35,0 Vf(V) [If(mA)] [10] [1] 0.5 C (pF) max 0,8


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PDF 200MHz 99/4Q) HSC88 00/2Q) HSU227 HS9588 HSC226 diode 368b HUV132 HUV131 HVC376B 358B diode varicap 5.8 Ghz varicap diode hitachi diode diodes varicap 0v c05 10 48 diode
DIODE marking Sl

Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 MARKING 62Z diode MARKING b3 IC MARKING 27A 6 PIN S6 68A 621 marking diode
Text: Y Laser mark Type No. HRU0103A HRU0302A HSU83 HSU88 HSU119 HSU276/ HSC276 HSU277/HSC277 HVU12


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PDF HRW0202A HRW0202B HRW0203A HRW0302A HRW05 HRW0503A HRW0702A HRW0703A HSM83 HSM88AS DIODE marking Sl s6 68a diode diode marking b2 b1391 diode MARKING A9 MARKING 62Z diode MARKING b3 IC MARKING 27A 6 PIN S6 68A 621 marking diode
2001 - marking code 62z

Abstract: philips surface mount zener diode v6 1S2473 equivalent marking 68m sot 23-5 DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: HSB276AS HSB276AYP HSB276S HSB278S HSB0104YP HSC88 HSC119 HSC226 HSC276 HSC276A HSC277 HSC278 HSD88 HSD276A , HSU276 HSU276A HSC88 HSC226 HSC276 HSC276A HSC278 HSD88 NEW HSD276A NEW HSD278 HSM88AS HSM88ASR HSM88WA , /317 HVR100 HVU308A HSM2692 HSM2693A HSM2694 HSC277 HSU277 HSC226 HSC276A HSC278 HSU227 HSU276A , No. HRU0103A/HRC0103A HRC0203B HRU0302A HSC88 HSU83 HSU88 HSU119/HSC119 HSU227 HSU276/ HSC276 HSU276A


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PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 1S2473 equivalent marking 68m sot 23-5 DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
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