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LTC1574CS#TRPBF Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1574CS Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1574CS-3.3#TR Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1574CS#PBF Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1574CS-5#TRPBF Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT3466EDD#TR Linear Technology LT3466 - Dual Full Function White LED Step-Up Converter with Built-In Schottky Diodes; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

HP STEP RECOVERY DIODES Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DVB6723-04

Abstract: dvb6101 HP STEP RECOVERY DIODES CVB1015-12 DVB6100-06 CVB1045-18 CVB1030-18 CVB1030-12 CVB1030-06 CJ6 DIODE
Text:  Step Recovery Diodes , Multichip SRD and SRD Chips ■05flS443 Gooiabb TIA «ALP — ALPHA , Reliability TD1-M Description Alpha Step Recovery Diodes (SRD) are oxide passi-vated, epitaxial silicon , . Applied Voltage for Square Root Law and A-Mode Multipliers and Step Recovery Diodes 4-68 Step Recovery , . Transition Time, Tt, Test Set-Up Figure 6. Typical SRD Multiplier Circuit 4-69 Step Recovery Diodes , multiplier factor where F0UTPUT = N times FINPUT. 4-70 Step Recovery Diodes , Multichip SRD and SRD Chips â


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PDF 05flS443 DVB6871 DVB6871-12 DVB6871-18 DVB6872-06 DVB6872-12 DVB6723-04 dvb6101 HP STEP RECOVERY DIODES CVB1015-12 DVB6100-06 CVB1045-18 CVB1030-18 CVB1030-12 CVB1030-06 CJ6 DIODE
HP STEP RECOVERY DIODES

Abstract: construction of varactor diode varactor diode application "Step Recovery Diode" DVA6736-06 DVA6735-18 DVA6736-18 M92A impulse generator microwave comb generator
Text: Voltage for Square Law and A-Mode Multipliers and Step Recovery Diodes 4-76 A-Mode Multiplier Diodes , The Alpha A-Mode diode combines the characteristics of the step recovery diode and the square law , forward conduction to use the charge storage characteristics of the step recovery diode, but it also uses , A-Mode Multiplier Diodes , Multichip A-Mode Diodes , A-Mode Chips 05A5443 0001374 0=14 ■ALP , Reliability ¥ Description Alpha A-Mode diodes are oxide passivated, epitaxial silicon mesa designs


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PDF 05A5443 DVA6738-06 DVA6738-12 DVA6738-18 DVA6738-24 DVA6738-30 HP STEP RECOVERY DIODES construction of varactor diode varactor diode application "Step Recovery Diode" DVA6736-06 DVA6735-18 DVA6736-18 M92A impulse generator microwave comb generator
2013 - HMXR-5001

Abstract: 5082-0825 HP 5082 7000 13001 YF 09 TRANSISTOR 33150A 2N6838 hsch-1001 HXTR-5101 hall marking code A04 5082-2815
Text: Step Recovery Diodes . . 301 Integrated Products , , Schottky Barrier Diodes , PIN and High Conductance Diodes , and Step Recovery Diodes . At the end of each , .•.•.•.••.•.•.••.•.• Step Recovery Diode Chip , Purpose Schottky Chip . 125 Step Recovery Diode , 5082-0090 5082-0094 5082-0097 5082-0112 5082-0113 Step Recovery Diode Chip


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Not Available

Abstract: No abstract text available
Text: Step Recovery Diodes , Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R , ■High Cutoff Frequency ■High Reliability Description Alpha Step Recovery Diodes (SRD) are , . Capacitance vs. Applied Voltage for Square Root Law and A-Mode Multipliers and Step Recovery Diodes Step , (-<— Output I Typical SRD Multiplier Circuit Step Recovery Diodes , Multichip SRD and SRD , % Multiplier Factor* = 10 Step Recovery Diodes , Multichip SRD and SRD Chios — ALPHA IND


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PDF 05flS443 DVB6870-06 DVB6870-12 DVB6870-18 DVB6871 DVB6871-12 DVB6871-18 DVB6872-06 DVB6872-12
1992 - HP STEP RECOVERY DIODES

Abstract: MSA-08XX Frequency Multipliers x5 Frequency multiplier frequency multiplier 1 mhz HSMP-3822 comb generator
Text: to step recovery diodes (SRD). These diodes are available in the low-cost SOT-23 package. Several , elimination of the bias resistor. Unfortunately the step recovery diodes currently are too expensive to allow , epitaxial PIN switching diodes have characteristics which are very similar to those of a step recovery , oscillator. However, there is an alternative low-cost solution using HP 's HSMP-3820 diodes . Low-Cost Multiplier A conventional step recovery diode multiplier consists of a diode, a biasing resistor, and


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PDF OT-23 5091-4918E 5966-4998E HP STEP RECOVERY DIODES MSA-08XX Frequency Multipliers x5 Frequency multiplier frequency multiplier 1 mhz HSMP-3822 comb generator
hp 5082 step recovery

Abstract: HP 5082-0113 HP STEP RECOVERY DIODES 5082-0151 1N5164 1N5163 hp 5082 0180 1430C hp 5082-0151 1N4547
Text: HEWLETT^ PACKARD COMPONENTS 5082-0100 series STEP RECOVERY 5082-0200 series DIODES , Specifications Hewlett-Packard's step recovery diodes are available in a variety of packages. Special package , for 03XX step recovery diodes ¡in X3, X4, and X5 multiplier applications. These results were obtained , PACKAGES SPECIAL ELECTRICAL SELECTIONS AVAILABLE UPON REQUEST Description/Applications These diodes are manufactured using modern epitaxial growth techniques. The diodes are passivated with a thermal oxide for


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PDF MIL-S-19500. hp 5082 step recovery HP 5082-0113 HP STEP RECOVERY DIODES 5082-0151 1N5164 1N5163 hp 5082 0180 1430C hp 5082-0151 1N4547
HP STEP RECOVERY DIODES

Abstract: 141T HP141T iris hall step recovery diodes Ku-band Step Recovery Multipliers 5082033 diode X8
Text: in Chapter 11.08, Reference 4. SUMMARY The HP 5082-0335 Step Recovery Diodes are intended fo r , background material on step recovery diodes and m ultipliers is found in A/N 918, 983, 984, and 989 , \ m HEWLETT PACKARD APPLICATION NOTE 928 Ku-band Step Recovery Multipliers INTRODUCTION This Application Note shows the design of a practical X8 single-stage Step Recovery Diode m ultiplier with typical maximum output power of 75 mW at 16 GHz. The design is based on HP 5082-0335 Step


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boonton 230A

Abstract: IN 1004 diodes HP 5082-1003 diode 5082-1001 5082-1001 HP STEP RECOVERY DIODES diode 5082-1002 1N4456 1006 diode hp 5082 step recovery
Text: HEWLETT^ PACKARD COMPONENTS HIGH CONDUCTANCE DIODES 5082-1001 (in 4456) 5082-1002 5082-1003 , /Applications The 5082-1000 series of diodes feature planar silicon epitaxial construction to provide high , minimized in these diodes of low conductivity modulation. These diodes are ideally suited for applications , MILLIMETERS AND (INCHES) Mechanical Specifications The HP Outline 11 package has a glass hermetic seal with , ) Maximum Reverse Leakage Current ir oua) Maximum Total Capacitance Co (PF) Maximum Reverse Recovery Time


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CI 4000

Abstract: MIL-STD-750 METHOD 2036 175 WIV High Switching 1N4456 hp 5082 step recovery HP 5082-1006 HP STEP RECOVERY DIODES hp 1002
Text: Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 (1N4456) Features • Fast Switching â , diodes feature planar silicon epitaxial construction to provide high conductance, low capacitance, and nanosecond turn-on and turn-off. Turn-on time and voltage overshoot are minimized in these diodes of low conductivity modulation. These diodes are ideally suited for applications such as core drivers, pulse , Specifications The HP Outline 11 package has a glass hermetic seal with dumet leads. The package will meet


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PDF 1N4456) CI 4000 MIL-STD-750 METHOD 2036 175 WIV High Switching 1N4456 hp 5082 step recovery HP 5082-1006 HP STEP RECOVERY DIODES hp 1002
HP STEP RECOVERY DIODES

Abstract: comb generator 33005D step recovery diode application 33002B step recovery diode zero bias diode Hewlett-Packard microwave pin diode step recovery diodes Microwave Generator
Text: the proper value of bias voltage, step recovery diodes work quite well with a zero ohm DC return which , Sinusoidal Current Figure 2. Distorted Forward Current in Step Recovery Diodes MEASUREMENTS A study , . Harold T. Friis, "Analysis of Harmonic Generator Circuits for Step Recovery Diodes ", Proc. IEEE, Vol. 55 , Using Step Recovery Diodes " Microwave Journal, Vol. 10, No. 4, April, 1967, pp. 69-78. 3 , . Step recovery diode impulse generators include an inductance in series with the diode. The voltage


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PDF 33002B, 33003B, 33004B 33005D, HP STEP RECOVERY DIODES comb generator 33005D step recovery diode application 33002B step recovery diode zero bias diode Hewlett-Packard microwave pin diode step recovery diodes Microwave Generator
HP 5082-0180

Abstract: HP STEP RECOVERY DIODES SRD diode impulse generator microwave diode 5082-1001 Analog Applications Journal
Text: Generation with Step Recovery Diodes I. INTRODUCTION Since its commercial introduction by HP , the Step Recovery Diode (SRD) has found many useful applications. One major area of applications is in pulse shaping , square yyave lag the input current by 90°. This is expected since ideally the step recovery diodes are , If t <2a) (2) II. PROPERTIES OF THE STEP RECOVERY DIODE The Step Recovery Diode (SRD) is a , These are fast silicon P-N junction switching diodes . If faster recovery times are required fo r extreme


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1999 - 2N2369 Spice

Abstract: HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 HP1120A 2N2369 avalanche nanosecond pulse stretcher nanosecond pulse generator Avalanche Transistor Circuits for Generating AN793 motorola
Text: OSCILLOSCOPE VIA HP -1120A FET PROBE TIME-CORRECTED INPUT STEP TO OSCILLOSCOPE VIA HP -1120A FET PROBE , 1µF ­ DELAY COMP TIME-CORRECTED INPUT STEP TO TEKTRONIX 661 OSCILLOSCOPE VIA ×10 HP , and high DC gain while operating at low supply current. Settling time is 30ns to 0.1% for a 5V step , amplifier output will step to ­ VIN when the input is driven. During slew, the settle node is bounded by the diodes , limiting voltage excursion. When settling occurs, the oscilloscope probe voltage should


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PDF AN79-31 AN79-32 an79f 2N2369 Spice HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 HP1120A 2N2369 avalanche nanosecond pulse stretcher nanosecond pulse generator Avalanche Transistor Circuits for Generating AN793 motorola
asymmetric thyristor

Abstract: 15 kV thyristor Emitter Turn-Off thyristor asymmetric thyristor datasheet 6" thyristor for HVDC "kv diode" thyristor lifetime asymmetric fast turn-off thyristor The field stop IGBT FS IGBT Infineon power diffusion process
Text: 13-kV Rectifiers: Studies on Diodes and Asymmetric Thyristors F.-J. Niedernostheidea), H.-J , applications where energy storage capacitors or inductors have to be discharged. High-voltage diodes are very , for the diode. Numerical studies demonstrate improved reverse recovery behavior by this type of , aluminum vacuum pre-depositions, each followed by a drive-in step . A boron implantation with a subsequent drive-in step was used to improve the contact resistance of the pbase shorts (not shown in Fig. 1) in the


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PDF 13-kV D-81541 D-59581 13-kV asymmetric thyristor 15 kV thyristor Emitter Turn-Off thyristor asymmetric thyristor datasheet 6" thyristor for HVDC "kv diode" thyristor lifetime asymmetric fast turn-off thyristor The field stop IGBT FS IGBT Infineon power diffusion process
hp 3101

Abstract: hp 3101 pin HP PIN DIODES hp 3201 5082-3041 HP5082-3305 hp 3303 5082 J 3305 5082-3041 equivalent
Text: resistance and the low device capacitance. These HP PIN Diodes are intended for use in RF switching , GHz. Broad band designs above 1 GHz are usually more economical using stripline PIN diodes ( HP Package , . These HP PIN diodes provide unique benefits in the high isolation to insertion loss ratio afforded by , bias currents. The HP 5082-3305 and 5082-3306 ceramic package PIN diodes are intended for controlling , HEWLETT^ PACKARD COMPONENTS PIN DIODES FOR FAST SWITCHING RF POWER SWITCHING AND ATTENUATION


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HP STEP RECOVERY DIODES

Abstract: hp 5082 step recovery MIL-STD-750 METHOD 2036 5082-1001 608C 1N4456 5082-1006 FSJ 1002 5082-1002 HP 5082-1006
Text: High Conductance Diodes Technical Data 5082-1001 5082-1002 5082-1006 (1N4456) Features • Fast , of diodes feature planar silicon epitaxial construction to provide high conductance, low capacitance, and nanosecond turn-on and turn-off. Turn-on time and voltage overshoot are minimized in these diodes of low conductivity modulation. These diodes are ideally suited for applications such as core , . Mechanical Specifications The HP Outline 11 package has a glass hermetic seal with dumet leads. The package


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PDF 1N4456) HP STEP RECOVERY DIODES hp 5082 step recovery MIL-STD-750 METHOD 2036 5082-1001 608C 1N4456 5082-1006 FSJ 1002 5082-1002 HP 5082-1006
5082-3071

Abstract: HP 5082-3140 5082-3046 hp pin diode 5082-3040 5082-3040 equivalent RS 3041 C 5082-3041 NSL 5082 AN929
Text: are direct mechanical replacements for Outline 61 (with top cap in place) diodes HP 5082-3040, -3041 , published in AN929; Fast Switching PIN Diodes . REVERSE RECOVERY TIME Shown below is reverse recovery time , HEWLETT^ PACKARD COMPONENTS PIN DIODES FOR STRIPLINE AND MICROSTRIP SWITCHES ATTENUATORS AND , peak pulse power (5082-3071) Description When forward biased these PIN diodes will appear as current , at high forward bias to greater than 10,000 ohms at zero or reverse bias. The HP 5082-3040, -3046


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PDF 5082-30n AN929; 5082-3071 HP 5082-3140 5082-3046 hp pin diode 5082-3040 5082-3040 equivalent RS 3041 C 5082-3041 NSL 5082 AN929
5965-8882E

Abstract: POWER12 diode ph-150
Text: attenuation is required. More information is available in HP Application Note 922 (Applica tions of PIN Diodes , . Isolation vs. Time (Turn-on) for HP 5082-3141. Frequency, 2 GHz. Figure 8. Typical Reverse Recovery Time , Switching PIN Diodes ". Reverse Recovery Time Figures 8 and 9 show reverse recovery time, ( t r r ) vs , That müHÆHEWLETT PACKARD Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators , dB Isolation (5082-3141) The HP 5082-3140 is a passivated planar device and the 5082-3141 is a


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PDF 5965-8882E 44475A4 5965-8882E POWER12 diode ph-150
1997 - equivalent 3140

Abstract: a 3140 HP 5082-3140 AN929 hp 3140
Text: Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 , ) Description/Applications The HP 5082-3140 is a passivated planar device and the 5082-3141 is a passivated mesa device. Both are in a shunt configuration in hermetic stripline packages. These diodes are , in 50 microstrip or stripline circuits. These diodes are designed for applications in microwave , modulators operating in the frequency range from HF through Ku-Band. These diodes provide nearly ideal


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1997 - Not Available

Abstract: No abstract text available
Text: attenuation is required. More information is available in HP Application Note 922 (Applications of PIN Diodes , Switching PIN Diodes ". Reverse Recovery Time Figures 8 and 9 show reverse recovery time, (trr) vs. forward , Hermetic PIN Diodes for Stripline/Microstrip Switches/ Attenuators Technical Data 5082-3140 , ) 3.94 (0.155) DIMENSIONS IN MILLIMETERS AND (INCHES) Description/Applications The HP 5082-3140 is , configuration in hermetic stripline packages. These diodes are optimized for good continuity of characteristic


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PDF 5965-8882E
single phase inverter design with irf830 for low

Abstract: mosfet rating for 3 phase 1 hp motor inverter irf840 any circuit using irf830 irf840 pwm ac motor IGBT inverter 12v 220v hp application note 964 IHF840 IRFP450 inverter HEXFETs FETs
Text: solution. External fast recovery freewheeling diodes are assumed around the IGBTs (HEXFETs already have a , ranging from one-quarter horsepower to 5 hp . The first section compares the characteristics and the , MOSFETs have been the choice of power electronic designers, especially at power levels below 5 hp because , have an internal reverse diode, designers can choose an external fast recovery diode to suit a specific , parasitic diode 5. 4-layer device 3-layer device absense of an inherent diode, whose recovery losses add


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PDF AIM-980 AN-964. single phase inverter design with irf830 for low mosfet rating for 3 phase 1 hp motor inverter irf840 any circuit using irf830 irf840 pwm ac motor IGBT inverter 12v 220v hp application note 964 IHF840 IRFP450 inverter HEXFETs FETs
LM 3140

Abstract: LM 3141 x-band diode
Text: required. More information is available in HP Application Note 922 (Applications of PIN Diodes ) and 920 , W hp % H E W LE T T m LEM P AC KAR D H erm etic PIN D iodes for Stripline/M icrostrip S w itch es , escription/ A pplications The HP 5082-3140 and -3170 are passivated planar devices and the 5082-3141 is a , suitable for Hi-Rel applications. These diodes are optimized for good continuity of characteristic , diodes are designed for applications in microwave and HF-UHF systems using stripline or microstrip


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2004 - HP STEP RECOVERY DIODES

Abstract: sampling gate
Text: waveform (only obtainable from a step recovery diode), whereas the Schottky diodes in harmonic and , a harmonic mixer because the former usually has an integrated LO amplifier and step recovery diode , , when pairs of antiparallel diodes are used at optimum LO power, one can realize almost the same conversion loss in the second harmonic or even mode as that achieved from the same diodes in a , power external LO source to drive the diodes hard enough to produce the necessary switching harmonics


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PDF SRD0218L. SRD0218L HP STEP RECOVERY DIODES sampling gate
impulse generator microwave

Abstract: step recovery diode application HP STEP RECOVERY DIODES 33005D 3 phase generator sine 33004 step recovery diodes comb generator simplifies
Text: ultiplication is much higher. SUMMARY Step recovery diodes may be used in impulse generator circuits to , m HEW LETT PACKARD APPLICATION NOTE 983 Comb Generator Simplifies Multiplier Design INTRO DUCTIO N A com b generator uses a step recovery diode with appro priate circu itry to generate a narrow , um low order harm onic level of the HP 33004 com b generator is +5 dBm (Figure 1), 22 dB down from the 27 dBm input level. from the active elem ent, the step recovery diode. The unwanted frequencies


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diode ph-150

Abstract: ph-30 diode LM 3140 diode ph-30 LM 3141
Text: required. More information is available in HP Application Note 922 (Applica tions of PIN Diodes ) and 929 , What H E W L E T T mLfiM P A C K A R D Hermetic PIN Diodes for Stripline/M icrostrip Sw , ) Description/Applications The HP 5082-3140 is a passivated planar device and the 5082-3141 is a passivated mesa device. Both are in a shunt configuration in hermetic stripline packages. These diodes are , 50 LI microstrip or stripline circuits. These diodes are designed for applications in microwave and


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PDF AN929: diode ph-150 ph-30 diode LM 3140 diode ph-30 LM 3141
2006 - tokin 473

Abstract: 473z RC-2377 tokin 473 5.5v
Text: Super Capacitor Thin Type HP Series Features · More smaller square size than conventional ED/L , Capacitance Max. rated voltage Part Number System HP S N 0G 473 Z L Lead form L: kink forming, S , : 4.2V, 0H:5.5V Size code Series Name HP : HP series Standard Rating Part Number Max. Rated Nominal , Specifications: HP Series Item Operating Temperature Range Maximum Rated Voltage (V.dc) Capacitance Capacitance , after immersion Capacitance Step 2 ESR LC Capacitance Temperature Variation of Characteristics Step 5 LC


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PDF 4A001 P0704SUCA16VOL04E tokin 473 473z RC-2377 tokin 473 5.5v
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