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HN2S01FUTE85LF Toshiba America Electronic Components DIODE ARRAY SCHOTTKY 10V US6
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HN2S01F datasheet (9)

Part Manufacturer Description Type PDF
HN2S01F Toshiba Array of Independent Diodes Original PDF
HN2S01F Others Silicon Diode Scan PDF
HN2S01F Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
HN2S01FU Toshiba Diode, Low Voltage High Speed Switching Application Original PDF
HN2S01FU Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
HN2S01FU Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
HN2S01FU(T5L,F,T) Toshiba HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R Original PDF
HN2S01FU(TE85L,F) Toshiba HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R Original PDF
HN2S01FUTE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA US6 Original PDF

HN2S01F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - HN2S01F

Abstract: No abstract text available
Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , HN2S01F Pin Assignment (Top View) Marking 2 2007-11-01 HN2S01F 3 2007-11-01 HN2S01F RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF HN2S01F HN2S01F
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F HN2S01F LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + Unit in mm 2 -8 - · · HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V (TYP.) @Ijr = 5mA 0.2 0.3 + 0.2 1. 6 - 0.1 OE- e - + I e oo M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC Maximum (Peak , 3 > O P3 33 HN2S01F 2/2


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PDF HN2S01F HN2S01F 100mA
2014 - Not Available

Abstract: No abstract text available
Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit: mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , 2014-03-01 HN2S01F Pin Assignment (Top View) Marking 2 2014-03-01 HN2S01F 3 2014-03-01 HN2S01F RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF HN2S01F HN2S01F
HN2S01F

Abstract: No abstract text available
Text: HN2S01F HN2S01F : mm 3 SBD : VF = 0.23V () @IF = 5mA (Ta = 25°C) VRM 15 V VR 10 V IFM 200 * mA IO 100 * mA IFSM 1* A (10ms) P 300 , , f = 1MHz V (TOP VIEW) 1 2007-11-01 HN2S01F 2 2007-11-01 HN2S01F 3 2007-11-01 HN2S01F · · · · "" · · ·


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PDF HN2S01F 100mA HN2S01F
2001 - Power DIODES, toshiba

Abstract: 015G HN2S01F
Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating , 2001-06-05 HN2S01F Pin Assignment (Top View) Marking 2 2001-06-05 HN2S01F 3 2001-06-05 HN2S01F RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF HN2S01F HN2S01F 10mstransportation Power DIODES, toshiba 015G
2001 - HN2S01F

Abstract: No abstract text available
Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm l HN2S01F is composed of 3 independent diodes. l Low reverse current: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating , 2001-06-05 HN2S01F Pin Assignment (Top View) Marking 2 2001-06-05 HN2S01F 3 2001-06-05 HN2S01F RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF HN2S01F HN2S01F
2007 - HN2S01F

Abstract: No abstract text available
Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , HN2S01F Pin Assignment (Top View) Marking 2 2007-11-01 HN2S01F 3 2007-11-01 HN2S01F RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is


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PDF HN2S01F HN2S01F
JP303

Abstract: No abstract text available
Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V (TYP.) @Ijr = 5mA 0.2 0.3 + 0.2 1. 6 - 0.1 Œ- e M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC Maximum , CAPACITANCE O r (pF) HN2S01F 2/2


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PDF HN2S01F HN2S01F 100mA JP303
Not Available

Abstract: No abstract text available
Text: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol , capacitance CT VR = 0, f = 1MHz 1 20 20 A 40 pF 2007-11-01 HN2S01F Pin Assignment (Top View) Marking 2 2007-11-01 HN2S01F 3 2007-11-01 HN2S01F RESTRICTIONS ON


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PDF HN2S01F HN2S01F
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F H mN'm n n i F mm w LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION · · HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V (TYP.) @Ijr = 5mA M A XIM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC Maximum (Peak) Reverse Voltage V 15 Reverse Voltage 10 V Vr mA Maximum , 4 1997 08-18 1/2 - TOSHIBA HN2S01F If - Vf IR - Vr REVERSE VOLTAGE V r (V) Ct


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PDF HN2S01F HN2S01F 100mA
toshiba diode 3D

Abstract: HN2S01F
Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE H N 2 S 0 1 F LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage : Vjr = 0.23V (TYP.) @Ijp = 5mA MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak , — 20 40 pF PIN ASSIGNMENT (TOP VIEW) MARKING 6 5 4 6 5 4 1997-08-18 1/2 TOSHIBA HN2S01F If


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PDF HN2S01F HN2S01F toshiba diode 3D
toshiba diode 3D

Abstract: 015G HN2S01F
Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE H N 2 S 0 1 F LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage : Vp = 0.23V (TYP.) @IF = 5mA MAXIMUM RATINGS (Ta = 25°C) * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per , HN2S01F If - VF IR - VR 0.1 0.2 0.3 0.4 FORWARD VOLTAGE Vp (V) CT - VR f= 1MHz


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PDF HN2S01F HN2S01F toshiba diode 3D 015G
33P33

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01 FU H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 1.25 ± 0.1 Unit in mm · · HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V (TYP.) @Ijr = 5mA 1 PB 5 M A X IM U M RATINGS (Ta = 25°C) -e SYMBOL RATING UNIT CHARACTERISTIC Maximum (Peak) Reverse , HN2S01FU 2/2


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PDF HN2S01 HN2S01F 100mA HN2S01FU 33P33
toshiba diode 3D

Abstract: HN2S01F HN2S01FU
Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE HN2S01FU LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage : VF = 0.23V (TYP.) @IF = 5mA MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum (Peak) Forward Current , ASSIGNMENT (TOP VIEW) MARKING 6 5 4 6 5 4 1997-08-18 1/2 TOSHIBA HN2S01FU If - VF IR - VR 0.1 0.2 0.3


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PDF HN2S01 HN2S01FU HN2S01F toshiba diode 3D HN2S01FU
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V (TYP.) @Ijr = 5mA 1.25 ±0.1 n □ 6 1 PB 5 -e M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT , TOSHIBA CAPACITANCE O r (pF) HN2S01FU 2/2


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PDF HN2S01 HN2S01F 100mA HN2S01FU
HN2S01

Abstract: No abstract text available
Text: TO SHIB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01FU H N 7 < ; n i F h U nit in mm 2.1 ± 0 . LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION · · HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V (TYP.) @Ip = 5mA -H -H 1.25 + 0.1 H M A XIM U M RATINGS (Ta = 25°C) -H SYMBOL V ' XVJ.YX CHARACTERISTIC M flY i'm um R p w rR p V nlfncrp RATING UNIT V o o tdtvt Reverse Voltage Maximum (Peak) Forward C


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PDF HN2S01FU HN2S01F 100mA HN2S01
HN2S01F

Abstract: HN2S01FU 12T1
Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE HN2S01FU LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage : Vjr = 0.23V (TYP.) @Ijp = 5mA MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak , (TOP VIEW) 6 5 4 MARKING 6 5 4 1997-08-18 1/2 TOSHIBA HN2S01FU If - VF IR - VR


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PDF HN2S01 HN2S01FU HN2S01F HN2S01FU 12T1
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: 511 HN2D03F 538 HN4D02JU 558 HN1D02FU 514 HN2S01F 541 HN1D03F 517 HN2S01FU 543 11 [ 2 ] [ 2 ] [ 2 ] 1. 1.1 (1) (Ta = 25°C) USV US6 , 1SS384 S-MINI (SOT-346, SC-59) SMQ (SOT-24, SC-61) SM6 (SOT-26, SC-74) HN2S01FU USV (SOT-353, SC-88A) 1SS394 1SS391 HN2S01F 1SS377 10 1SS378 100 0.3 10 20 , * 240 * 80 0.5 80 1.2 100 3.0 0 4 A5 1SS193 × 3 ×3 * HN2S01FU


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
DF2S6.8UFS

Abstract: JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
Text: HN2S01FU HN2S05FU 200 20 HN2S03FE HN2S03FU SW 300 20 500 0.50 0.55 , HN2S01F VF 100 100 (mm) 100 10 0.63 (mm) 1.6 2.8 2.1 1.25


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PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: 0.55 50 0.42 0.5 200 0.16 1 0.38 0.45 300 HN2S01FU HN2S05FU 200 20 VF 1.6 VF HN2S03FE HN2S03FU SW 50 20 HN2S01F VF 100


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
CMZB220

Abstract: CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
Text: 1 0.38 0.45 300 HN2S01FU HN2S05FU 200 20 VF 1.6 VF HN2S03FE HN2S03FU SW 50 20 HN2S01F VF 100 100 (mm) 5 0.35 20 0.3


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PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
Text: 1 0.38 20 50 0.23 10 1.0 0.45 300 Common cathode HN2S01FU HN2S05FU , Low leakage current, High-speed SW 50 20 HN2S01F Independent diodes 100 100 (mm


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PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
2fu smd transistor

Abstract: 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
Text: (mm) 100 0.23 (mm) HN2S01F 5 0.5 HN2S05FU Remarks 100 0.35 20 0.5 (mm) HN2S01FU 5 0.23 10 0.3 0.35 10 4.2 MAX @IF (mA) (mm) 10 MINI


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
general purpose zener diode 256

Abstract: 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
Text: (Ta = 25°C) 1.2 Absolute Maximum Ratings (mm) HN2S01FU HN2S05FU 100 (mm) HN2S01F Low VF, Independent diodes Low VF, Common cathode 100 Low VF, Series-connected


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 general purpose zener diode 256 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
TPCA*8030

Abstract: lm2804 TPCA*8036 TPC8037 TPC8A03 Sj 88a diode 2SK2033 TPCA8028 IC sj 4558 TC4W53FU
Text: No file text available


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PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 TPC8037 TPC8A03 Sj 88a diode 2SK2033 TPCA8028 IC sj 4558 TC4W53FU
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