The Datasheet Archive

SF Impression Pixel

Search Stock (13)

  You can filter table by choosing multiple options from dropdownShowing 13 results of 13
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
HN2D02FUTW1T1 ON Semiconductor Rochester Electronics 8,895 $0.05 $0.04
HN2D02FUTW1T1G ON Semiconductor Future Electronics - $0.09 $0.06
HN2D02FUTW1T1G ON Semiconductor element14 Asia-Pacific - $0.07 $0.06
HN2D02FUTW1T1G ON Semiconductor Newark element14 35 $0.42 $0.09
HN2D02FUTW1T1G ON Semiconductor Allied Electronics & Automation - $0.15 $0.15
HN2D02FUTW1T1G ON Semiconductor Future Electronics - $0.05 $0.05
HN2D02FUTW1T1G ON Semiconductor Avnet - $0.07 $0.06
HN2D02FUTW1T1G ON Semiconductor Avnet - $0.08 $0.07
HN2D02FUTW1T1G ON Semiconductor Rochester Electronics 540,000 $0.07 $0.06
HN2D02FUTW1T1G ON Semiconductor Chip1Stop 9,000 $0.07 $0.07
HN2D02FUTW1T1G ON Semiconductor element14 Asia-Pacific 435 $0.35 $0.35
HN2D02FUTW1T1G ON Semiconductor Farnell element14 65 £0.21 £0.05
SHN2D02FUTW1T1G ON Semiconductor Avnet - $0.08 $0.07

No Results Found

Show More

HN2D02FU datasheet (5)

Part Manufacturer Description Type PDF
HN2D02FU Toshiba Array of Independent Diodes Original PDF
HN2D02FU Toshiba DIODE Scan PDF
HN2D02FU(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 80MA US6 Original PDF
HN2D02FUTW1T1 On Semiconductor Ultra High Speed Switching Diodes Original PDF
HN2D02FUTW1T1G On Semiconductor Ultra High Speed Switching Diodes Original PDF

HN2D02FU Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
HN2D02FU

Abstract: No abstract text available
Text: HN2D02FU HN2D02FU : mm (6 ) 3 : VF (3) = 0.98 V () : trr = 1.6 ns () : CT = 0.5 pF () (Ta = 25°C) VRM 85 V VR 80 V IFM 240 * mA IO 80 * mA , ( 1) V A 2009-06-16 HN2D02FU (top view) 2 2009-06-16 HN2D02FU 1. (trr) 3 2009-06-16 HN2D02FU · · · · ""


Original
PDF HN2D02FU HN2D02FU
HN2D02FU

Abstract: No abstract text available
Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit in mm HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF(3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF , . 2000-09-14 1/3 HN2D02FU Marking Pin Assignment (Top View) 961001EAA2' · The information , contained herein is subject to change without notice. 2000-09-14 2/3 HN2D02FU Fig.1 Reverse


Original
PDF HN2D02FU HN2D02FU 961001EAA2'
HN2D02FU

Abstract: No abstract text available
Text: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage : Vp (3) = 0.98V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : CT = 0.5pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak , TOSHIBA Semiconductor Reliability Handbook. 1997-08-18 1/2 TOSHIBA HN2D02FU Fig. 1 : REVERSE RECOVERY


OCR Scan
PDF HN2D02FU HN2D02FU 961001EAA2'
2007 - Not Available

Abstract: No abstract text available
Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application z HN2D02FU is composed of 3 independent diodes. z Low forward voltage z Small total capacitance : VF(3) = 0.98V (typ.) : CT = 0.5pF (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) Unit: mm , 3.0 4.0 V Unit A pF ns 1 2007-11-01 HN2D02FU Marking Pin Assignment (Top View) 2 2007-11-01 HN2D02FU Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2007-11-01 HN2D02FU


Original
PDF HN2D02FU HN2D02FU
2001 - HN2D02FU

Abstract: No abstract text available
Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF(3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF , V µA 2001-06-07 HN2D02FU Marking Pin Assignment (Top View) 2 2001-06-07 HN2D02FU Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2001-06-07 HN2D02FU RESTRICTIONS ON


Original
PDF HN2D02FU HN2D02FU 10transportation
2001 - HN2D02FU

Abstract: No abstract text available
Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm l HN2D02FU is composed of 3 independent diodes. l Low forward voltage : VF(3) = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = , Unit V µA 2001-06-07 HN2D02FU Marking Pin Assignment (Top View) 2 2001-06-07 HN2D02FU Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2001-06-07 HN2D02FU RESTRICTIONS ON


Original
PDF HN2D02FU HN2D02FU
2009 - HN2D02FU

Abstract: No abstract text available
Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF(3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 , 2007-11-01 HN2D02FU Marking Pin Assignment (top view) 2 2007-11-01 HN2D02FU Fig.1 Reverse Recovery Time (trr) Test Circuit 3 2007-11-01 HN2D02FU RESTRICTIONS ON PRODUCT USE · Toshiba


Original
PDF HN2D02FU HN2D02FU
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU H m 'm N 7 mmr n f l 7 F 1 1 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm 2 .] ± 0.1 · · HN2D02PU is composed of 3 independent diodes. TT A m T /m _ \ Low Forward Voltage : vj?' ( 3) = U.30V Viyp.; Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance ; Ct -Q,5pF , . 1997 08-18 1/2 - TOSHIBA Fig. 1 : REVERSE RECOVERY TIM E (trr) TEST CIRCUIT HN2D02FU INPUT


OCR Scan
PDF HN2D02FU HN2D02PU 961001EAA2'
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns (Typ.) • Small Total Capacitance 2.1 ± 0.1 ,1.2 5 ± 0.1 : Vp (3 ) = 0.98V (Typ.) r~ n : O r = 0.5pF (Typ , TOSHIBA HN2D02FU Fig. 1 : REVERSE RECOVERY TIME (trr) TEST CIRCUIT INPUT WAVEFORM OUTPUT


OCR Scan
PDF HN2D02FU HN2D02FU 961001EAA2'
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage : Vp (3) = 0.98V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : CT = 0.5pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage , conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-08-18 1/2 TOSHIBA HN2D02FU Fig


OCR Scan
PDF HN2D02FU the75 961001EAA2'
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm · · · · HN2D02FU is composed of 3 independent diodes. Low Forward Voltage : Vp (3 ) = 0.98V (Typ.) 2.1 ± 0.1 ,1.2 5 ± 0.1 r~ Fast Reverse Recovery Time : tr r = 1.6ns (Typ.) Small Total Capacitance : O r = 0.5pF (Typ.) -S -H SYMBOL Vr m Vr !f M RATING 85 80 240* 80* 1 , 1997 08-18 - 1/2 TOSHIBA HN2D02FU Fig. 1 : REVERSE RECOVERY TIME (trr) TEST CIRCUIT


OCR Scan
PDF HN2D02FU HN2D02FU 961001EAA2'
S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80


OCR Scan
PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
4558 dd

Abstract: 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
Text: 200 General use SW Di x 3 A1 HN2D02FU 80 80 300 200 General use SW Di x 3


OCR Scan
PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
diode Z47

Abstract: z43 diode Z5.6 Z3.3 02CZ5 S360 DIODE diode zener z6 S368 diode Z27 1s diode
Text: Diodes Signal Diode for General Purpose R atino V r (V) lo im A ) BO 80 BO 80 80 80 Switching Diode 80 80 80 80 80 80 200 400 30 80 10 10 10 Schottky Barrier Diode 10 40 80 20 20 Zener Diode - ssc - _ - SS M - - use _ - - USM - - - - - - - use HN2D01FU HN2D02FU - - - - - S-M IN I (SOT-23MOD) _ - - SM Q - - - SMV J _ - _ _ _ _ - SM6 HN 2D 01F _ _ _ _ _ - M INI _ _ _ _ _ _ _ _ _ _ _ _ _ _ N O TE Single Single


OCR Scan
PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode zener z6 S368 diode Z27 1s diode
DF2S6.8UFS

Abstract: JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
Text: 1SS193 1SS382 1SS272 HN2D01JE (HN2D01FU) 1SS196 ( HN2D02FU ) 1SS187


Original
PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: HN2D01JE 532 HN2S03T 553 HN1D02F 508 HN2D02FU 535 HN4D01JU 555 HN1D02FE , (HN2D01FU) 1SS193 ( HN2D02FU ) 1SS196 1SS362FV 1SS387 80 100 80 200 HN2D01JE , * 80 0.5 80 1.2 100 3.0 0 4 A1 1SS193 × 3 ×3 HN2D02FU 200 80


Original
PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: (HN2D01FU) (HN2D01F) ( HN2D02FU ) HN1D03FU HN1D03F +


Original
PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
CMZB220

Abstract: CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
Text: 1SS382 1SS272 HN2D01JE (HN2D01FU) (HN2D01F) ( HN2D02FU ) HN1D03FU


Original
PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
Text: 1SS272 HN2D01JE (HN2D01FU) (HN2D01F) High-speed switching, Independent diodes ( HN2D02FU


Original
PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
general purpose zener diode 256

Abstract: 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
Text: ( HN2D02FU ) High-speed switching, Independent diodes 1SS187 High-speed switching, Independent diodes


Original
PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 general purpose zener diode 256 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
2fu smd transistor

Abstract: 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
Text: 1SS382 1SS272 HN2D01JE (HN2D01FU) High-speed switching, Independent diodes ( HN2D02FU


Original
PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
LT 543 common cathode

Abstract: CMG07 CMG03 DF2S5.6SC HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT 2fu smd transistor CMZ24 DSR520CT
Text: ) High-speed switching, Independent diodes ( HN2D02FU ) High-speed switching, Independent diodes


Original
PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG07 CMG03 DF2S5.6SC HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT 2fu smd transistor CMZ24 DSR520CT
CMG03

Abstract: 1SS391 toshiba SEMICONDUCTOR GENERAL CATALOG DF2S6.8S DSR520CT TOSHIBA DIODE CATALOG CMG07 CMF05 2fu smd transistor DF3A8.2FU
Text: HN2D01JE (HN2D01FU) High-speed switching, Independent diodes 1SS196 ( HN2D02FU ) High-speed


Original
PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 toshiba SEMICONDUCTOR GENERAL CATALOG DF2S6.8S DSR520CT TOSHIBA DIODE CATALOG CMG07 CMF05 2fu smd transistor DF3A8.2FU
TPCA*8030

Abstract: lm2804 TPCA*8036 TPC8037 TPC8A03 Sj 88a diode 2SK2033 TPCA8028 IC sj 4558 TC4W53FU
Text: No file text available


Original
PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 TPC8037 TPC8A03 Sj 88a diode 2SK2033 TPCA8028 IC sj 4558 TC4W53FU
2001 - HN4C06J

Abstract: te85l F 1SS302 rn4983 2SC4117 US6 KEC 2SK2145 SUFFIX TE85L Toshiba HN1B04FE RN4607
Text: 100 HN2S03FU ­ 1SS402 25 100 50 No common pins 3-in-1 (reverse) HN2D02FU


Original
PDF
Supplyframe Tracking Pixel