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HN1D03FU(T5L,F,T) datasheet (1)

Part Manufacturer Description Type PDF
HN1D03FU(T5L,F,T) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC/CA US6 Original PDF

HN1D03FU(T5L,F,T) Datasheets Context Search

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2009 - HN1D03FU

Abstract: No abstract text available
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF , single diode one. Marking Pin Assignment (Top View) 1 2007-11-01 HN1D03FU Fig.1 Reverse , Test Condition 2 V A 2007-11-01 HN1D03FU 3 2007-11-01 HN1D03FU 4 2007-11-01 HN1D03FU RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and


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PDF HN1D03FU HN1D03FU
2007 - HN1D03FU

Abstract: No abstract text available
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF , single diode one. Marking Pin Assignment (Top View) 1 2007-11-01 HN1D03FU Fig.1 Reverse , Test Condition 2 V A 2007-11-01 HN1D03FU 3 2007-11-01 HN1D03FU 4 2007-11-01 HN1D03FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained


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PDF HN1D03FU HN1D03FU
Not Available

Abstract: No abstract text available
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2 , information contained herein is subject to change without notice. 2000-09-14 1/4 HN1D03FU Fig , voltage Reverse current Test Condition 2000-09-14 V µA 2/4 HN1D03FU 2000-09-14 3/4 HN1D03FU 2000-09-14 4/4 Toshiba


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PDF HN1D03FU 100mA
2013 - Not Available

Abstract: No abstract text available
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance , 2013-04-23 HN1D03FU Fig.1 Reverse Recovery Time (trr) Test Circuit Unit 1 Electrical Characteristics , μA 2013-04-23 HN1D03FU 3 2013-04-23 HN1D03FU 4 2013-04-23 HN1D03FU


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PDF HN1D03FU
Not Available

Abstract: No abstract text available
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF , commercial production 1992-05 1 2014-03-01 HN1D03FU Fig.1 Reverse Recovery Time (trr) Test , Condition 2 V μA 2014-03-01 HN1D03FU 3 2014-03-01 HN1D03FU 4 2014-03-01 HN1D03FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates


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PDF HN1D03FU
HN1D03FU

Abstract: No abstract text available
Text: HN1D03FU HN1D03FU : mm 2 Unit 1 Q1Q2: VF (3) = 0.90V () Q1Q2: trr = 1.6ns () Q1Q2: CT = 0.9pF () Unit 2 Q3Q4 : VF (3) = 0.92V () Q3Q4 : trr = 1.6ns () Q3Q4 : CT = 2.2pF () Unit1Unit2 (Ta = 25) VRM 85 V , : (//) ( /) () () *: Q1Q2Q3Q4 1 Unit1Unit2 Unit1Unit2 1 1 75% (TOP VIEW) 1 2007-11-01 HN1D03FU Unit1 , ( 1) V A 1. ( trr ) 2 2007-11-01 HN1D03FU 3 2007-11-01 HN1D03FU ·


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PDF HN1D03FU HN1D03T 100mA HN1D03FU
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. • Built in Anode Common and Cathode Common. Unit 1 Low Forward Voltage Ql, Q2 : VF = 0.90V (Typ , contained herein is subject to change without notice. 1997-08-18 1/4 TOSHIBA HN1D03FU Unit 1 ELECTRICAL , €” 1.60 4.0 ns 1997-08-18 2/4 TOSHIBA HN1D03FU Unit 1 (Ql, Q2 COMMON) If - VF 10» 102 10 10-1 10-2 , 20 40 60 80 REVERSE VOLTAGE Vr (V) 1997-08-18 3/4 TOSHIBA HN1D03FU Unit 2 (Q3, Q4 COMMON) If - VF 10Â


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PDF HN1D03FU N1D03FU 100UG
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE HN1D03FU U nit in mm 2.1 ± 0.1 1.25 ± 0.1 to Ö »n IO o r-fc fc 1 2 - R ULTRA HIGH SPEED SW ITCHING APP LIC A TIO N . · Built in Anode Common and Cathode , 50fi) 1273 HN1D03FU U n it 1 ELECTRICAL CHARACTERISTICS (Q 1, Q 2 C O M M O N ) (Ta = 25 , MA 0.50 2.20 4.0 PF - 1.60 4.0 ns - - - - - - . 1274 HN1D03FU ip _ V f IR - , HN1D03FU ip - Vf IF (mA) IR - V R FORWARD CURRENT U nit 2 (Q3, Q4 COMMON) CT - V r TOTAL


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PDF HN1D03FU 100mA
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03FU H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm · B uilt in Anode Common and Cathode Common. 2.1 Í 0.1 U nit 1 · · , contained herein is subject to change w ith o u t notice. 1997 08-18 - 1/4 TOSHIBA HN1D03FU , 1997 08-18 - 2/4 TOSHIBA HN1D03FU U nit 1 (Q l, Q2 COMMON) U n it 1 (Q l, Q2 , ) 100 300 REVERSE VOLTAGE 1997 08-18 - 3/4 TOSHIBA HN1D03FU U nit 2 (Q3, Q4


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PDF HN1D03FU D03FU
HN1D03FU

Abstract: No abstract text available
Text: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. • Built in Anode Common and Cathode Common. Unit 1 Low Forward Voltage Ql, Q2 , /4 TOSHIBA HN1D03FU Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 COMMON) (Ta = 25°C) CHARACTERISTIC , TOSHIBA HN1D03FU Unit 1 (Ql, Q2 COMMON) If - VF 103 102 10 10-1 10-2 , 20 40 60 80 REVERSE VOLTAGE Vr (V) 1997-08-18 3/4 TOSHIBA HN1D03FU Unit 2 (Q3, Q4 COMMON) If


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PDF HN1D03FU N1D03FU HN1D03FU
2001 - HN1D03FU

Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance , Assignment (Top View) 1 2001-06-07 HN1D03FU Fig.1 Reverse Recovery Time (trr) Test Circuit Unit , µA 2001-06-07 HN1D03FU 3 2001-06-07 HN1D03FU 4 2001-06-07 HN1D03FU


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PDF HN1D03FU HN1D03FU TOSHIBA "ULTRA HIGH SPEED" DIODE
2001 - HN1D03FU

Abstract: No abstract text available
Text: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2 , . Marking Pin Assignment (Top View) 1 2001-06-07 HN1D03FU Fig.1 Reverse Recovery Time (trr , Test Condition 2 V µA 2001-06-07 HN1D03FU 3 2001-06-07 HN1D03FU 4 2001-06-07 HN1D03FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF HN1D03FU HN1D03FU
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03FU m h n i n n 3 F 11 m m 'm m m mr v ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm · B u ilt in Anode Common and Cathode , TOSHIBA HN1D03FU Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 COMMON) (Ta = 25°C) SYM BO L V F (1 , 1.60 - 1997 08-18 - 2/4 TOSHIBA HN1D03FU U nit 1 (Q l, Q2 COMMON) U n it 1 , O LTA GE 1997 08-18 - 3/4 TOSHIBA HN1D03FU U nit 2 (Q3, Q4 COMMON) U n it 2


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PDF HN1D03FU
Not Available

Abstract: No abstract text available
Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2 , HN1D03FU TOSHIBA Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 COMMON) (Ta = 25°C) CHARACTERISTIC , Forward Voltage Reverse C urrent - V /uA HN1D03FU TOSHIBA Unit 1 (Ql, Q2 COMMON , HN1D03FU TOSHIBA Unit 2 (Q3, Q4 COMMON) If - Vf Unit 2 Unit 2 (Q3, Q4 COMMON) IR - Vr


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PDF HN1D03FU D03FU
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: HN1D01FU HN1D02FU HN1D03FU 1SS309 Ell m f f i HN 1D01F HN 1D02F HN 1D03F 3 m 21 O Sm all Product (2125 Type) HN1D01FU HN 1D02FU HN1D03FU 1. Using Device Selection Flowchart 1.5


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80


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PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
4558 dd

Abstract: 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
Text: F5/F6 Type No. 1 1 öS Max. Rating V r(V) IO(mA) P(mW)* SMV/SM6 USVAJS6 Structure Connection Mark SMV/SM6 USV/US8 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 E u Q , A2 HN1D02F HN1D02FU 80 100 300 200 1SS184X2 A3 HN1D03F HN1D03FU 80 100 300 200 1SS181 + 1SS184 a A4 HN2D01F HN2D01FU 80 80 300


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PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: . 1SV242 1SV245 1SV252 HN1D01F HN1D01FU HN1D02F HN1D02FU HN1D03F HN1D03FU HN2D01F HN2D01FU HN1V01H HN1V02H


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: Lead Ultra Super M in i Type (US6) Type No. HN2D01FU HN1D01FU HN1D02FU HN1D03FU Vr (V) 80 80 80


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PDF 160-i f-1SS349-- SS181 SS184 SS187 SS190 1SS307 SS193 HN2D01P HN1D01F diode MARKING CODE A9 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: .6FK 493 10 [ 1 ] DF8A6.2FK 495 HN1D03FU 520 , 1SS272 HN1D03FU HN1D03F 1.6 typ. 1SS336 1SS337 6.0 typ. 1SS403 1SS370 1SS250 , A3 1SS184 ×2 ×2 HN1D03FU 200 80 * 300 * 100 0.5 80 1.2 100


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
DF2S6.8UFS

Abstract: JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
Text: 1SS190 HN1D03FU + 1SS336 1SS337 1SS250 1SS306 1SS311


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PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: (HN2D01FU) (HN2D01F) (HN2D02FU) HN1D03FU HN1D03F +


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
CMZB220

Abstract: CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
Text: 1SS382 1SS272 HN2D01JE (HN2D01FU) (HN2D01F) (HN2D02FU) HN1D03FU


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PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
Text: switching, Independent diodes HN1D03FU HN1D03F High-speed switching, Common cathode Common


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PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
2fu smd transistor

Abstract: 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
Text: 1SS190 High-speed switching, Independent diodes HN1D03FU High-speed switching, Common cathode +


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
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