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HN1D03FU,LF Toshiba America Electronic Components DIODE ARRAY GP 80V 80MA US6
HN1D03FTE85LF Toshiba America Electronic Components DIODE ARRAY GP 80V 100MA SC74
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HN1D03F Toshiba Corporation Bristol Electronics 464 - -
HN1D03F(TE85L,F) Toshiba America Electronic Components Chip1Stop 1,350 $0.49 $0.40
HN1D03FU,LF Toshiba America Electronic Components Avnet - $0.05 $0.04
HN1D03FU(TE85L,F) Toshiba America Electronic Components RS Components 25 £0.13 £0.07
HN1D03FU(TE85L,F) Toshiba America Electronic Components Chip1Stop 4,400 $0.49 $0.38
HN1D03FUT5LFT Toshiba America Electronic Components ComS.I.T. 42,000 - -
HN1D03FUTE85R Toshiba America Electronic Components ComS.I.T. 45,000 - -

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HN1D03F datasheet (7)

Part Manufacturer Description Type PDF
HN1D03F Toshiba Application Specific Diode Array Original PDF
HN1D03F Toshiba Silicon Epitaxial Planar Type Original PDF
HN1D03FTE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SM6 Original PDF
HN1D03FU Toshiba Silicon epitaxial planar type diode for ultra high speed switching application Original PDF
HN1D03FU Toshiba DIODE Scan PDF
HN1D03FU(T5L,F,T) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC/CA US6 Original PDF
HN1D03FU(TE85L,F) Toshiba HN1D03FU - Diode Switching 85V 0.08A 6-Pin US T/R Original PDF

HN1D03F Datasheets Context Search

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HN1D03F

Abstract: No abstract text available
Text: HN1D03F HN1D03F : mm 2 Unit 1 Q1Q2: VF (3) = 0.90V () Q1Q2: trr = 1.6ns () Q1Q2: CT = 0.9pF () Unit 2 Q3Q4 : VF (3) = 0.92V () Q3Q4 : trr = 1.6ns () Q3Q4 : CT = 2.2pF () Unit1Unit2 (Ta = 25) VRM 85 V , % (TOP VIEW) 1 2007-11-01 HN1D03F Unit1 (Q1, Q2 , Ta = 25) VF (1 , ( 1) V A 1. ( trr ) 2 2007-11-01 HN1D03F 3 2007-11-01 HN1D03F ·


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PDF HN1D03F 100mA HN1D03F
2001 - HN1D03F

Abstract: No abstract text available
Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2 , 75% of the single diode one. Marking Pin Assignment (Top View) 1 2001-06-07 HN1D03F , Characteristic Forward voltage Reverse current Test Condition 2 V µA 2001-06-07 HN1D03F 3 2001-06-07 HN1D03F RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually


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PDF HN1D03F HN1D03F
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE HN1D03F Unit in 2.8 - 0 . 3 ULTRA HIGH SPEED SWITCHING APPLICATION rm + 0.2 + 0.2 - . Built in Anode Common and Cathode Common. Unit 1 . Low Forward Voltage . Fast Reverse Recovery Time . Small Total Capacitance Unit 2 . Low Forward Voltage . Fast Reverse , P U L S E GENERATOR (HOUT = 5on) 1269 HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1.Q2 , VERSE CURRENT o o o o I R (/¿A) ^ HN1D03F HN1D03F Unit 2 Unit 2 FORWARD CURRENT Ip


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PDF HN1D03F 100mA
Not Available

Abstract: No abstract text available
Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total , Reliability Handbook. 2000-09-14 1/3 HN1D03F Fig.1 Reverse Recovery Time (trr) Test Circuit , The information contained herein is subject to change without notice. 2000-09-14 2/3 HN1D03F


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PDF HN1D03F 961001EAA2'
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm 2 .8 1.6 - · Built in Anode Common and Cathode Common. + 0.2 0.3 + 0.2 Unit 1 · · · Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Q , 1/3 TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 CO M M ON) (Ta = 25 , ith o u t notice. # 1997 08-18 - 2/3 TOSHIBA HN1D03F Unit 1 If - Vf Unit 2


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PDF HN1D03F
2014 - Not Available

Abstract: No abstract text available
Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance , commercial production 1992-05 1 2014-03-01 HN1D03F Fig.1 Reverse Recovery Time (trr) Test , Reverse current Test Condition 2 V μA 2014-03-01 HN1D03F 3 2014-03-01 HN1D03F


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PDF HN1D03F
2011 - Not Available

Abstract: No abstract text available
Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage z Small total capacitance Unit 2 z Low forward voltage z Small total capacitance Unit: mm Q1, Q2: VF (3) = 0.90V (typ , . Marking Pin Assignment (Top View) 1 2007-11-01 HN1D03F Fig.1 Reverse Recovery Time (trr , pF ns V Unit 2 2007-11-01 HN1D03F 3 2007-11-01 HN1D03F RESTRICTIONS ON PRODUCT


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PDF HN1D03F
2001 - HN1D03F

Abstract: No abstract text available
Text: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) Small total capacitance , . Marking Pin Assignment (Top View) 1 2001-06-07 HN1D03F Fig.1 Reverse Recovery Time (trr , Condition 2 V µA 2001-06-07 HN1D03F 3 2001-06-07 HN1D03F RESTRICTIONS ON


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PDF HN1D03F HN1D03F
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm + 0.2 Built in Anode Common and Cathode Common. 2.8-0.3 + 0.2 1.6 Unit 1 • Low Forward Voltage Fast Reverse Recovery Time Q l, Q2 : tr r = , TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 CO M M ON) (Ta = 25°C) CHARACTERISTIC , to change w ith o u t notice. 1997 08-18 - 2/3 TOSHIBA HN1D03F Unit 1 If - Vf


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PDF HN1D03F
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE HN1D03F m m H N1 n n 3F m 'm m mmr w SILICON EPITAXIAL PLANAR TYPE mm ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.2 Built in Anode Common and Cathode Common. Unit 1 · Low Forward Voltage · Fast Reverse Recovery Time · Small Total , Reliability Handbook. 1997 08-18 1/3 - TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 , 2/3 - TOSHIBA HN1D03F Unit 1 If - Vf Unit 2 If - Vf Unit 1 Ir - V r


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PDF HN1D03F
HN1D03F

Abstract: No abstract text available
Text: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 3 F ULTRA HIGH SPEED SWITCHING APPLICATION. • Built in Anode Common and Cathode Common. Unit in mm Unit 1 • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance Unit 2 • Low Forward Voltage â , Reliability Handbook. 1997-08-18 1/3 TOSHIBA HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1, Q2 COMMON) (Ta , contained herein is subject to change without notice. 1997-08-18 2/3 TOSHIBA HN1D03F Unit 1 IF - vf


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PDF HN1D03F HN1D03F
4558 dd

Abstract: 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
Text: F5/F6 Type No. 1 1 öS Max. Rating V r(V) IO(mA) P(mW)* SMV/SM6 USVAJS6 Structure Connection Mark SMV/SM6 USV/US8 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 E u Q , A2 HN1D02F HN1D02FU 80 100 300 200 1SS184X2 A3 HN1D03F HN1D03FU 80 100 300 200 1SS181 + 1SS184 a A4 HN2D01F HN2D01FU 80 80 300


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PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
Text: 1SS336 1SS337 1SS344 1SS348 1SS349 1SS374 1SS377 1SS379 HN1D01F HN1D02F HN1D03F HN2D01F High-speed


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PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: -Lead Sm all Product (2125 Type) HN2D01FU 1SS308 HN1D01F I HN 1D02F HN1D03F 1SS308 w ST hi HN1D01FU HN1D02FU HN1D03FU 1SS309 Ell m f f i HN 1D01F HN 1D02F HN 1D03F 3 m 21 O Sm all Product (2125 Type) HN1D01FU HN 1D02FU HN1D03FU 1. Using Device Selection Flowchart 1.5


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: . 1SV242 1SV245 1SV252 HN1D01F HN1D01FU HN1D02F HN1D02FU HN1D03F HN1D03FU HN2D01F HN2D01FU HN1V01H HN1V02H


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: Lead Ultra Super M in i Type (US6) Type No. HN2D01FU HN1D01FU HN1D02FU HN1D03FU Vr (V) 80 80 80 , ) Type No. HN2D01P HN1D01F HN1D02F HN1D03F Vr (V) 80 80 80 80 Ifm (mA) 240 300 300 300 Io (mA


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PDF 160-i f-1SS349-- SS181 SS184 SS187 SS190 1SS307 SS193 HN2D01P HN1D01F diode MARKING CODE A9 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
DF2S6.8UFS

Abstract: JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
Text: 1SS190 HN1D03FU + 1SS336 1SS337 1SS250 1SS306 1SS311 , . (HN2D01F) 80 100 1.6 (80) Typ. HN1D03F 80 100 80 200 80


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PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: (HN2D01FU) (HN2D01F) (HN2D02FU) HN1D03FU HN1D03F +


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
CMZB220

Abstract: CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
Text: 1SS382 1SS272 HN2D01JE (HN2D01FU) (HN2D01F) (HN2D02FU) HN1D03FU HN1D03F + (1SS306) 1SS399 HN2D03F 11 2011/1 SCJ0004R


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PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: 1SS272 HN1D03FU HN1D03F 1.6 typ. 1SS336 1SS337 6.0 typ. 1SS403 1SS370 1SS250 , .6FK 493 10 [ 1 ] DF8A6.2FK 495 HN1D03FU 520 , 511 HN2D03F 538 HN4D02JU 558 HN1D02FU 514 HN2S01F 541 HN1D03F 517 , A3 1SS184 ×2 ×2 HN1D03FU 200 80 * 300 * 100 0.5 80 1.2 100 , 80 1.2 100 3.0 0 4 A3 1SS184 ×2 ×2 HN1D03F 300 80 * 300


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
Text: switching, Independent diodes HN1D03FU HN1D03F High-speed switching, Common cathode Common


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PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
general purpose zener diode 256

Abstract: 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
Text: 1SS190 High-speed switching, Independent diodes HN1D03FU High-speed switching, Common cathode + , switching, Independent diodes HN1D03F 80 100 1.6 Typ. High-speed switching, Common cathode


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 general purpose zener diode 256 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
2fu smd transistor

Abstract: 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
Text: 1SS190 High-speed switching, Independent diodes HN1D03FU High-speed switching, Common cathode + , High-speed switching, Independent diodes HN1D03F 80 100 1.6 Typ. High-speed switching, Common


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
LT 543 common cathode

Abstract: CMG07 CMG03 DF2S5.6SC HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT 2fu smd transistor CMZ24 DSR520CT
Text: High-speed switching, Independent diodes High-speed switching, Independent diodes HN1D03FU HN1D03F


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PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG07 CMG03 DF2S5.6SC HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT 2fu smd transistor CMZ24 DSR520CT
CMG03

Abstract: 1SS391 toshiba SEMICONDUCTOR GENERAL CATALOG DF2S6.8S DSR520CT TOSHIBA DIODE CATALOG CMG07 CMF05 2fu smd transistor DF3A8.2FU
Text: switching, Independent diodes HN1D03FU High-speed switching, Common cathode + Common anode , switching, Independent diodes HN1D03F 80 100 1.6 Typ. High-speed switching, Common cathode


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PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 toshiba SEMICONDUCTOR GENERAL CATALOG DF2S6.8S DSR520CT TOSHIBA DIODE CATALOG CMG07 CMF05 2fu smd transistor DF3A8.2FU
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