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HN1D02FU,LF Toshiba America Electronic Components DIODE ARRAY GP 80V 100MA US6
HN1D02FU(T5L,F,T) Toshiba America Electronic Components DIODE ARRAY GP 80V 100MA US6
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HN1D02FU(TE85L,F) Toshiba America Electronic Components Chip1Stop 3,850 $0.46 $0.35

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HN1D02FU datasheet (6)

Part Manufacturer Description Type PDF
HN1D02FU Toshiba Japanese - Diodes Original PDF
HN1D02FU Toshiba Common Cathode Diode Array Original PDF
HN1D02FU Others Silicon Diode Scan PDF
HN1D02FU Others The Diode Data Book with Package Outlines 1993 Scan PDF
HN1D02FU Toshiba DIODE Scan PDF
HN1D02FU(T5L,F,T) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 US6 Original PDF

HN1D02FU Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - HN1D02FU

Abstract: No abstract text available
Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm l HN1D02FU is composed of 2 unit of cathode common. l Low forward voltage : VF (3) = 0.90V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance , 1/3 HN1D02FU Pin Assignment (Top View) Marking Fig.1 Reverse Recovery Time (trr) Test Circuit 2001-02-08 2/3 HN1D02FU Q1, Q,2, Q3, Q4 Common Q1, Q,2, Q3, Q4 Common Q1, Q,2


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PDF HN1D02FU HN1D02FU
Not Available

Abstract: No abstract text available
Text: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common. : Vjr (3) = 0.90V (Typ.) : trr = 1.6ns (Typ.) : CT = 0.9pF (Typ.) 2.1 ± 0.1 ,1 .2 5 ± 0 .1 r , Reliability Handbook. 1997 08-18 1/2 - HN1D02FU TOSHIBA Fig. 1 REVERSE RECOVERY TIME (trr


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PDF HN1D02FU D02FU HN1D02FU 961001EAA2'
HN1D02FU

Abstract: 12T1B
Text: HN1D02FU HN1D02FU : mm (6 ) 2 : VF (3) = 0.90V () : trr = 1.6ns () : CT = 0.9pF () (Ta = 25°C) VRM 85 V VR 80 V IFM 300* mA IO 100* mA , trr IF = 10mA 1 ( 1) V A 2007-11-01 HN1D02FU (TOP VIEW) 1. (trr) 2 2007-11-01 HN1D02FU 3 2007-11-01 HN1D02FU · · ·


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PDF HN1D02FU 100mA HN1D02FU 12T1B
2007 - HN1D02FU

Abstract: No abstract text available
Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = , (fig.1) 1.6 4.0 ns Reverse current 1 A 2007-11-01 HN1D02FU Pin Assignment , HN1D02FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is


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PDF HN1D02FU HN1D02FU
2001 - Not Available

Abstract: No abstract text available
Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = , 1/3 HN1D02FU Pin Assignment (Top View) Marking Fig.1 Reverse Recovery Time (trr) Test Circuit 2001-02-08 2/3 HN1D02FU Q1, Q,2, Q3, Q4 Common Q1, Q,2, Q3, Q4 Common Q1, Q,2


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PDF HN1D02FU HN1D02FU
HN1D02FU

Abstract: No abstract text available
Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 unit of cathode common. • Low Forward Voltage : Vp (3) = 0.90V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : ct = 0.9pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse , Reliability Handbook. 1997-08-18 1/2 TOSHIBA HN1D02FU Fig. 1 REVERSE RECOVERY TIME (trr) TEST CIRCUIT


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PDF HN1D02FU N1D02FU HN1D02FU 961001EAA2'
HN1D02FU

Abstract: No abstract text available
Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 unit of cathode common. • Low Forward Voltage : Vf (3) = 0.90V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : Cx = 0.9pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse , Reliability Handbook. 1997-08-18 1/2 TOSHIBA HN1D02FU Fig. 1 REVERSE RECOVERY TIME (trr) TEST CIRCUIT


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PDF HN1D02FU N1D02FU HN1D02FU 961001EAA2'
2009 - HN1D02FU

Abstract: No abstract text available
Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = , (fig.1) 1.6 4.0 ns Reverse current 1 A 2007-11-01 HN1D02FU Pin Assignment , HN1D02FU RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF HN1D02FU HN1D02FU
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. H N 1 D02FU unit of cathode common. : Vjr (3) = 0.90V (Typ.) : trr = 1.6ns (Typ.) : CT = 0.9pF (Typ.) -EE -EE · · · · HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm 2.1 ± 0.1 ,1 .2 5 ± 0 .1 r- in 6 PB 5 MAXIMUM , Reliability Handbook. 6 5 4 A3 1997 08-18 1/2 - TOSHIBA HN1D02FU Fig. 1 REVERSE


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PDF HN1D02FU D02FU HN1D02FU 961001EAA2'
Not Available

Abstract: No abstract text available
Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit: mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = , HN1D02FU Pin Assignment (Top View) Marking Q1, Q2, Q3, Q4 Common Q1, Q2, Q3, Q4 Common Q1, Q2 , 2014-03-01 HN1D02FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF HN1D02FU HN1D02FU
Not Available

Abstract: No abstract text available
Text: ÍI 6 n 5 4 p p A3 Q riQ 2 i ü 2Ü ¡Ü3 ¡Unit 1 1267 td- td ~ S3 1 2 HN1D02FU- Fig , SILICON EPITAXIAL PLANAR TYPE HN1D02FU Unit in mm ,1.2 5 ± 0.1 2.1 ± 0.1 ULTRA HIGH SPEED SWITCHING APPLICATION. · · · · HN1D02FU is composed of2 unit of cathode common. Low Forward Voltage : Vp (3 ) = 0.90V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance : C'i' = 0.9pF(Typ.) -E£ M AXIM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC -e


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PDF HN1D02FU HN1D02FU HN1D02FU-
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02FU m h n i n m m 'm m mmr n 7 F 11 U nit in mm 2 .1 ± 0.1 ULTRA HIGH SPEED SWITCHING APPLICATION. · · · · HN1D02FU is composed of 2 un it of cathode common. Low Forward Voltage : Vp (3 ) = 0.90V (Typ.) Fast Reverse Recovery Time : t r r = 1.6ns (Typ.) Small Total Capacitance : Op -0.9pF (Typ.) - m ,1.2 5 ± , HN1D02FU Fig. 1 REVERSE RECOVERY TIME ( trr) TEST CIRCUIT INPUT WAVEFORM TXT 0.01,«F DUT 11


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PDF HN1D02FU HN1D02FU
S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80


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PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
4558 dd

Abstract: 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
Text: F5/F6 Type No. 1 1 öS Max. Rating V r(V) IO(mA) P(mW)* SMV/SM6 USVAJS6 Structure Connection Mark SMV/SM6 USV/US8 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 E u Q , A2 HN1D02F HN1D02FU 80 100 300 200 1SS184X2 A3 HN1D03F HN1D03FU 80 100 300 200 1SS181 + 1SS184 a A4 HN2D01F HN2D01FU 80 80 300


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PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
DAN802

Abstract: DAN803 DAN801 DAN601 DAN403 DAN401 DAN-10 1SS309 DAP803 DAP401
Text: -/) 269A HN1D01FU 80 300 100 1 100 0. 5 80 4 t^Tr/i-hr (7M':«y)x2 628B HN1D02FU 80 300 100


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PDF 1SS309 MA6S718 100MHz) MA122 MA123 HI629 DAN802 DAN803 DAN801 DAN601 DAN403 DAN401 DAN-10 DAP803 DAP401
DA8P

Abstract: DAP401 DAN803 DAN802 DAN801 DAN601 DAN403 DAN401 DAN-10 1SS309
Text: -/) 269A HN1D01FU 80 300 100 1 100 0. 5 80 4 t^Tr/i-hr (7M':«y)x2 628B HN1D02FU 80 300 100


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PDF 1SS309 IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 DA8P DAP401 DAN803 DAN802 DAN801 DAN601 DAN403 DAN401 DAN-10
2004 - HN1D02FE

Abstract: HN1D02FU
Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm The HN1D02FU is composed of 2 common cathode units. Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300* mA


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PDF HN1D02FE HN1D02FU HN1D02FE
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: HN1D01FU HN1D02FU HN1D03FU 1SS309 Ell m f f i HN 1D01F HN 1D02F HN 1D03F 3 m 21 O Sm


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
1SS309

Abstract: DAN803 DAN802 DAN801 DAN601 DAN403 DAN401 DAN-10 644b DAP401
Text: -/) 269A HN1D01FU 80 300 100 1 100 0. 5 80 4 t^Tr/i-hr (7M':«y)x2 628B HN1D02FU 80 300 100


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PDF 1SS309 LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 DAN803 DAN802 DAN801 DAN601 DAN403 DAN401 DAN-10 644b DAP401
PC802

Abstract: 628-B DAN803 DAN802 DAN801 DAN601 DAN403 DAN401 DAN-10 1SS309
Text: -/) 269A HN1D01FU 80 300 100 1 100 0. 5 80 4 t^Tr/i-hr (7M':«y)x2 628B HN1D02FU 80 300 100


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PDF 1SS309 MA6S121 MA6S718 100MHz) MA122 MA123 PC802 628-B DAN803 DAN802 DAN801 DAN601 DAN403 DAN401 DAN-10
2007 - HN1D01FE

Abstract: HN1D02FU
Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300* mA


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PDF HN1D01FE HN1D02FU HN1D01FE
2004 - Not Available

Abstract: No abstract text available
Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current


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PDF HN1D01FE HN1D02FU
1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Text: -/) 269A HN1D01FU 80 300 100 1 100 0. 5 80 4 t^Tr/i-hr (7M':«y)x2 628B HN1D02FU 80 300 100


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PDF 1SS309 MA122 MA123 30MAX ES1100 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
2004 - HN1D01FE

Abstract: HN1D02FU
Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current


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PDF HN1D01FE HN1D02FU HN1D01FE
diode Z47

Abstract: z43 diode Z5.6 Z3.3 02CZ5 S360 DIODE diode zener z6 S368 diode Z27 1s diode
Text: 1SS300 1SS301 1SS302 - _ HN1D01FU HN1D02FU - - - - - - _ - - - - - - - - - 1SS308


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PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode zener z6 S368 diode Z27 1s diode
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