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Abstract: hfd5n50
Text: BVDSS = 500 V RDS(on) typ = 1.2 HFD5N50S / HFU5N50S ID = 4.0 A 500V N-Channel MOSFET , Avalanche Rugged Technology Robust Gate Oxide Technology HFU5N50S 1.Gate 2. Drain 3. Source Very , minimum pad size recommended (PCB Mount) SEMIHOW REV.A0,OCT 2009 HFD5N50S/ HFU5N50S OCT 2009 , . Essentially Independent of Operating Temperature SEMIHOW REV.A0,OCT 2009 HFD5N50S/ HFU5N50S Electrical Characteristics TC=25 °C HFD5N50S/ HFU5N50S Typical Characteristics Figure 1. On Region

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