The Datasheet Archive

HFU2N60 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
HFD2N60

Abstract: No abstract text available
Text: BVDSS = 600 V RDS(on) typ = 4.0 HFD2N60 / HFU2N60 ID = 1.8 A 600V N-Channel MOSFET , Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60 1.Gate 2. Drain 3. Source Very , minimum pad size recommended (PCB Mount) SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 July 2005 , . Essentially Independent of Operating Temperature SEMIHOW REV.A0,July 2005 HFD2N60 / HFU2N60 Electrical Characteristics TC=25 °C HFD2N60 / HFU2N60 Typical Characteristics Figure 1. On Region


Original
PDF HFD2N60 HFU2N60 HFD2N60 O-252 O-251
HFU2N60

Abstract: 10V 2A MOSFET N-channel c25 mosfet 600V 2A MOSFET N-channel MOSFET C25 mosfet 300V 10A
Text: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU2N60 APPLICATIONSL TO-251 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 T stg -Storage Temperature , HFU2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFU2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFU2N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFU2N60 Shantou Huashan Electronic Devices


Original
PDF HFU2N60 O-251 Width300sDuty 600VVGS HFU2N60 10V 2A MOSFET N-channel c25 mosfet 600V 2A MOSFET N-channel MOSFET C25 mosfet 300V 10A
RG 702 Diode

Abstract: hfu2n60s HFD2N60S HFU2N60 702 D-PAK
Text: BVDSS = 600 V RDS(on) typ = 4.2 HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N60S Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N60S 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 (Typ.) @VGS=10V 100% Avalanche Tested


Original
PDF HFD2N60S HFU2N60S HFD2N60S O-252 O-251 RG 702 Diode hfu2n60s HFU2N60 702 D-PAK
Supplyframe Tracking Pixel