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BVDSS

Abstract: hfu4n50
Text: BVDSS = 500 V RDS(on) HFD4N50 / HFU4N50 typ = 2.0 ID = 2.6 A 500V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD4N50 Superior , minimum pad size recommended (PCB Mount) SEMIHOW REV.A0,July 2005 HFD4N50 / HFU4N50 July 2005 , . Essentially Independent of Operating Temperature SEMIHOW REV.A0,July 2005 HFD4N50 / HFU4N50 Electrical Characteristics TC=25 °C HFD4N50 / HFU4N50 ID, Drain Current [A] ID, Drain Current [A


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PDF HFD4N50 HFU4N50 HFD4N50 O-252 O-251 BVDSS hfu4n50
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