The Datasheet Archive

HFD1N60 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
HFU1N60

Abstract: No abstract text available
Text: BVDSS = 600 V RDS(on) typ = 9.5 HFD1N60 / HFU1N60 ID = 0.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N60 Superior , minimum pad size recommended (PCB Mount) SEMIHOW REV.A0,Dec 2005 HFD1N60 / HFU1N60 Dec 2005 , . Essentially Independent of Operating Temperature SEMIHOW REV.A0,Dec 2005 HFD1N60 / HFU1N60 Electrical Characteristics TC=25 °C HFD1N60 / HFU1N60 Typical Characteristics Figure 1. On Region


Original
PDF HFD1N60 HFU1N60 HFD1N60 O-252 O-251 HFU1N60
HFD1N60S

Abstract: hfu1n60s 453 oc
Text: BVDSS = 600 V RDS(on) typ = 10 HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD1N60S Superior , minimum pad size recommended (PCB Mount) SEMIHOW REV.A0,Sep 2009 HFD1N60S / HFU1N60S Sep 2009 , Independent of Operating Temperature SEMIHOW REV.A0,Sep 2009 HFD1N60S / HFU1N60S Electrical Characteristics TC=25 °C HFD1N60S / HFU1N60S ID, Drain Current [A] ID, Drain Current [A] Typical


Original
PDF HFD1N60S HFU1N60S HFD1N60S O-252 O-251 hfu1n60s 453 oc
Supplyframe Tracking Pixel