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Part Manufacturer Description Datasheet Download Buy Part
LT1160CN Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1160CN#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1336IS#TR Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: -40°C to 85°C
LT1160CS#PBF Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C
LT1336CS#PBF Linear Technology LT1336 - Half-Bridge N-Channel Power MOSFET Driver with Boost Regulator; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1160CS#TR Linear Technology LT1160 - Half-/Full-Bridge N-Channel Power MOSFET Drivers; Package: SO; Pins: 14; Temperature Range: 0°C to 70°C

HEXFET Power MOSFET designer manual Datasheets Context Search

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2001 - HEXFET Power MOSFET designer manual

Abstract: IRF540 irf520 comparison Analyzing, Measuring, and Stabilizing Feedback Control Loops in Switching Regulators and Converters SLUA127 MOSFET designer manual IRF540 n-channel MOSFET DC TO DC CONVERTER IRF540 n-channel MOSFET BATTERY CHARGER SEM-700 Closing The Feedback Loop SEM-700 Stabilizing Feedback Control Loops
Text: , which must be supplied to drive this device, is 26nC (see HEXFET Power MOSFET Designer 's Manual [4]). , . HEXFET Power MOSFET Designer 's Manual , International Rectifier, 1993 5. Rectifier Device Data, Motorola , orderly startup, switch protection, regulation, and high-side power MOSFET drive. These functions are , charged and discharged. IGATE varies with the choice of the power MOSFET used as the buck switch. The , selected to bring D2 into conduction and also provide base current to Q2. A power MOSFET could also be


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PDF SLUU095 UC3578 HEXFET Power MOSFET designer manual IRF540 irf520 comparison Analyzing, Measuring, and Stabilizing Feedback Control Loops in Switching Regulators and Converters SLUA127 MOSFET designer manual IRF540 n-channel MOSFET DC TO DC CONVERTER IRF540 n-channel MOSFET BATTERY CHARGER SEM-700 Closing The Feedback Loop SEM-700 Stabilizing Feedback Control Loops
AN-1084

Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 200V depletion N-Channel jfet 500V depletion n channel depletion MOSFET
Text: Parasitic BJT Components That May Cause dv/dt Induced Turn-on References: " HEXFET Power MOSFET Designer 's Manual - Application Notes and Reliability Data," International Rectifier "Modern Power , Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier , capability of the power MOSFET . www.irf.com AN-1084 1 Power MOSFET Basics Vrej Barkhordarian , MOSFET . The invention of the power MOSFET was partly driven by the limitations of bipolar power


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PDF AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 200V depletion N-Channel jfet 500V depletion n channel depletion MOSFET
1997 - HEXFET Power MOSFET designer manual

Abstract: BJT Gate Drive circuit MOSFET designer manual BJT with i-v characteristics POWER BJTs BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual TRANSISTORS BJT with low gate voltage
Text: Turn-on To Order Index References: " HEXFET Power MOSFET Designer 's Manual - Application Notes , Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca , schematic, transfer characteristics and device symbol for a MOSFET . The invention of the power MOSFET , VT VGS (b) ID D SB (Channel or Substrate) G S (c) Figure 1. Power MOSFET (a , expensive than the power MOSFET . To Order Index Holdoff Voltage (V) Another BJT limitation is


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1997 - HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT Gate Drive circuit BJT with i-v characteristics BJT with V-I characteristics TRANSISTORS BJT with low gate voltage circuits using BJT
Text: Parasitic BJT Components That May Cause dv/dt Induced Turn-on References: " HEXFET Power MOSFET Designer 's Manual - Application Notes and Reliability Data," International Rectifier "Modern Power , Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power , , transfer characteristics and device symbol for a MOSFET . The invention of the power MOSFET was partly , (b) ID D SB (Channel or Substrate) G S (c) Figure 1. Power MOSFET (a) Schematic, (b


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1998 - 500w power amplifier circuit diagram

Abstract: HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 500 watt mosfet power amplifier circuit diagram 200w power amplifier PCB layout 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1
Text: Magazine, January 1988 [3] International Rectifier, " HEXFET Power MOSFET Designer 's Manual ", IRFP440 Data Sheet Page C-538, HBD-4, 1987 [4] Motorola, "TMOS Power MOSFET Transistor Device Data", MTW16N40E Data , . In particular the power MOSFET has served this market reasonably well but with limitations. One , PA, and the power MOSFETs. The transformer T1 provides impedance transformation of the power MOSFET , G MOSFET APT power MOSFETs have always enjoyed lower source inductance, less than 5nH [5


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PDF APT9501 400Watt, 56MHz 100VDC F-33700 500w power amplifier circuit diagram HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 500 watt mosfet power amplifier circuit diagram 200w power amplifier PCB layout 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1
mospower applications handbook

Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" Siliconix Handbook 02N05 MOSFET designer manual Gate Drive Characteristics 501n04
Text: Hexfets. Chapter 8, Hexfet . Power Mosfet . Designer 's Manual . 9/87 International Rectifier. Application , one quarter the volume and one eighth the weight, of comparable conventional power MOSFET devices , external circuit, through the packaging, to the input of the power MOSFET , then continues as an identical coplanar structure, from the output of the power MOSFET die, through the package, to the contact of the , Advantages of the DE-Series Fast Power™ MOSFET For high power applications, the DE-Series incorporates


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PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" Siliconix Handbook 02N05 MOSFET designer manual Gate Drive Characteristics 501n04
1997 - HEXFET Power MOSFET designer manual

Abstract: constant current load SOIC-16 UCC1919 UCC2919 UCC3919 15V 5A Power Supply Schematic
Text: of the impedance curves are normalized [1] International Rectifier, HEXFET Power MOSFET Designer , and the external MOSFET will be turned off. It will either be latched off (until the power to the , allows the power dissipated in the external MOSFET to be held relatively constant during a short, for , Figure 3 illustrates the effect of RPL on the average MOSFET power dissipation into a short. The , , with a steady state load current below IFAULT, the power dissipation in the external MOSFET will be


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PDF UCC1919 UCC2919 UCC3919 UCC3919 HEXFET Power MOSFET designer manual constant current load SOIC-16 UCC1919 UCC2919 15V 5A Power Supply Schematic
1999 - HEXFET Power MOSFET designer manual

Abstract: csp process flow diagram UDG-98123 mosfet amplifier UCC3919 UCC2919 UCC1919 MOSFET designer manual TSSOP-16 SOIC-16
Text: International Rectifier, HEXFET Power MOSFET Designer 's Manual , Application Note 949B, Current Ratings, Safe , is used to control average power dissipation in the external MOSFET . If a resistor is connected , circuit will be VDD: The power connection for the device. APPLICATION INFORMATION nal MOSFET will , power limiting feature is included which allows the power dissipated in the external MOSFET to be held , graph in Figure 4 illustrates the effect of RPL on the average MOSFET power dissipation into a short


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PDF UCC1919 UCC2919 UCC3919 UCC3919 HEXFET Power MOSFET designer manual csp process flow diagram UDG-98123 mosfet amplifier UCC2919 UCC1919 MOSFET designer manual TSSOP-16 SOIC-16
1998 - HEXFET Power MOSFET designer manual

Abstract: No abstract text available
Text: device. References [1] International Rectifier, HEXFET Power MOSFET Designer 's Manual , Application Note , pin is used to control average power dissipation in the external MOSFET . If a resistor is connected , feature is included which allows the power dissipated in the external MOSFET to be held relatively , RPL on the average MOSFET power dissipation into a short. The equation for the average power , input voltage. The average power dissipation in the external MOSFET with a shorted output will be


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PDF UCC1919 UCC2919 UCC3919 UCC3919 HEXFET Power MOSFET designer manual
1998 - HEXFET Power MOSFET designer manual

Abstract: UC3919 ugd9 constant current load
Text: providing the hot swap benefits of the device. References [1] International Rectifier, HEXFET Power MOSFET , feature is included which allows the power dissipated in the external MOSFET to be held relatively , negative). For power limiting to begin to occur, the voltage drop across the MOSFET must be greater than , MOSFET power dissipation into a short. The equation for the average power dissipation during a short is , average power dissipation in the external MOSFET with a shorted output will be proportional to input


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PDF UCC1919 UCC2919 UCC3919 UCC3919 HEXFET Power MOSFET designer manual UC3919 ugd9 constant current load
1999 - IRF540 irf520 comparison

Abstract: U-167 Analyzing, Measuring, and Stabilizing Feedback Control Loops in Switching Regulators and Converters unitrode manual sem-900 rectifier module circuit diagram 48vdc circuits irf520 switch UC3909 IRF540 application schematic diagram 48V battery charger regulator irf520 power
Text: Power MOSFET Designer 's Manual , International Rectifier, 1993 [5] Rectifier Device Data, Motorola, Q1 , external MOSFET , IGATE, is supplied through the external diode and VGG regulator. The power related to , choice of the power MOSFET used as the buck switch. The IRF530 was selected to minimize the heatsink , Voltage Regulator provides the power supply designer with an integrated circuit controller that , that is a fraction of the cost of a comparable module. INTRODUCTION Distributed power systems have


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PDF U-167 UC3578 IRF540 irf520 comparison U-167 Analyzing, Measuring, and Stabilizing Feedback Control Loops in Switching Regulators and Converters unitrode manual sem-900 rectifier module circuit diagram 48vdc circuits irf520 switch UC3909 IRF540 application schematic diagram 48V battery charger regulator irf520 power
IRF540 n-channel MOSFET BATTERY CHARGER

Abstract: 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger RF520 48V to 12V buck transformer 72vdc schematic diagram
Text: sors, U-156 Application Note, Unitrode Applications Handbook, 1997, pp. 3-517 - 3-540. [4] HEXFET Power MOSFET Designer 's Manual , Inter national Rectifier, 1993 [5] Rectifier Device Data, Motorola, Q1/95 [6 , UC3578 Buck Stepdown Voltage Regulator provides the power supply designer with an inte grated circuit , Catalog [10] L. H. Dixon, Closing the Feedback Loop, Unitrode Power Supply Design Seminar Manual SEM 700 , operating from an input of 15V to 72V with an N channel MOSFET switching transistor. Using this switch


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PDF U-167 UC3578 UC3S78 48Vions Q1/95 IRF540 n-channel MOSFET BATTERY CHARGER 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger RF520 48V to 12V buck transformer 72vdc schematic diagram
1999 - Not Available

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , used to control average power dissipation in the external MOSFET . If a resistor is connected from this , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374B UCC3919
1999 - Not Available

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374C UCC3919
1999 - bs584

Abstract: HEXFET Power MOSFET designer manual UCC3919PW UCC3919N UCC3919D UCC3919 UCC2919PW UCC2919N UCC2919D UCC2919
Text: , HEXFET Power MOSFET Designer 's Manual , Application Note 949B, Current Ratings, Safe Operating Area, and , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , of RPL on the average MOSFET power dissipation into a short. The equation for the average power , 3%, independent of input voltage. The average power dissipation in the external MOSFET with a , I MAX *I 10 -6 LOAD (16) MOSFET AVERAGE SHORT CIRCUIT POWER DISSIPATION


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PDF UCC2919 UCC3919 SLUS374C UCC3919 bs584 HEXFET Power MOSFET designer manual UCC3919PW UCC3919N UCC3919D UCC2919PW UCC2919N UCC2919D UCC2919
1999 - bs584

Abstract: HEXFET Power MOSFET designer manual UCC2919D UCC2919N UCC2919PW UCC2919 UCC3919D UCC3919N UCC3919PW UCC3919
Text: MOSFET Designer 's Manual , Application Note 949B, Current Ratings, Safe Operating Area, and High , and the external MOSFET will be turned off. It will either be latched off (until the power to the , limiting feature is included which allows the power dissipated in the external MOSFET to be held , average MOSFET power dissipation into a short. The equation for the average power dissipation during a , %, independent of input voltage. The average power dissipation in the external MOSFET with a shorted output will


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PDF UCC2919 UCC3919 SLUS374A UCC3919 bs584 HEXFET Power MOSFET designer manual UCC2919D UCC2919N UCC2919PW UCC2919 UCC3919D UCC3919N UCC3919PW
1999 - UCC2919

Abstract: bs584 UCC3919PW UCC3919N UCC3919D UCC3919 UCC2919PW UCC2919N UCC2919D MOSFET designer manual
Text: MOSFET Designer 's Manual , Application Note 949B, Current Ratings, Safe Operating Area, and High , average power dissipation in the external MOSFET . If a resistor is connected from this pin to the source , and the external MOSFET will be turned off. It will either be latched off (until the power to the , limiting feature is included which allows the power dissipated in the external MOSFET to be held , average MOSFET power dissipation into a short. The equation for the average power dissipation during a


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PDF UCC2919 UCC3919 SLUS374A UCC3919 UCC2919 bs584 UCC3919PW UCC3919N UCC3919D UCC2919PW UCC2919N UCC2919D MOSFET designer manual
1999 - Not Available

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374C UCC3919
1999 - Not Available

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , used to control average power dissipation in the external MOSFET . If a resistor is connected from this , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374B UCC3919
1999 - Not Available

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374C UCC3919
2001 - mospower applications handbook

Abstract: ASC capacitor siliconix handbook SERVICE MANUAL lg r500 Rudy Severns inverter lg ig drive p1 47R16 FPS-4N "mospower applications handbook" 101N09
Text: . Hexfet . Power Mosfet Designer 's Manual . 9/87 International Rectifier App. Note 937A. John D. Kraus and , Page 24 References (1) DE-SERIES Fast Power MOSFET An Introduction Directed Energy Inc. Ft , DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note , the DESERIES MOSFET in both switching speed and frequency for switch mode applications such as Class D and E RF amplifiers, high frequency power conversion and high speed pulse generators. Directed


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1999 - 949b

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374C UCC3919 949b
1999 - Not Available

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374C UCC3919
1999 - Not Available

Abstract: No abstract text available
Text: of the device. references 1. International Rectifier, HEXFET Power MOSFET Designer 's Manual , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , power dissipated in the external MOSFET to be held relatively constant during a short, for different , load current below IFAULT, the power dissipation in the external MOSFET will be: P DISS +R DS(on) I 2 , MOSFET power dissipation will generally be quite low due to the low duty cycle, as defined by: P I V t IN


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PDF UCC2919 UCC3919 SLUS374C UCC3919
1999 - HEXFET Power MOSFET designer manual

Abstract: UCC3919PW UCC3919N UCC3919D UCC3919 UCC2919PW UCC2919N UCC2919D UCC2919 bs584
Text: , HEXFET Power MOSFET Designer 's Manual , Application Note 949B, Current Ratings, Safe Operating Area, and , Power Limit. This pin is used to control average power dissipation in the external MOSFET . If a resistor , of RPL on the average MOSFET power dissipation into a short. The equation for the average power , 3%, independent of input voltage. The average power dissipation in the external MOSFET with a , I MAX *I 10 -6 LOAD (16) MOSFET AVERAGE SHORT CIRCUIT POWER DISSIPATION


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PDF UCC2919 UCC3919 SLUS374C UCC3919 HEXFET Power MOSFET designer manual UCC3919PW UCC3919N UCC3919D UCC2919PW UCC2919N UCC2919D UCC2919 bs584
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