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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
HMC752LC4TR-R5 HMC752LC4TR-R5 ECAD Model Analog Devices Inc GaAs HEMT MMIC Low Noise Amplifier, 24 - 28 GHz
HMC752LC4 HMC752LC4 ECAD Model Analog Devices Inc GaAs HEMT MMIC Low Noise Amplifier, 24 - 28 GHz

HEMT-6000 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
HEMT6000 HEMT6000 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

HEMT-6000 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MGF4404A

Abstract: MGF4403A gaas fet gm
Text: 60.00 VDS=2V. VGS=0 Gs:Associated gain s WÊ +# "it SHF îteca^ismo HEMT GaAs FET. mmo Vgso(V) -4 gm(mS , ) -4 1oss(mA) 10.00 30. 00 60.00 Vds=2V, Vgs=0 Gs:Associated gain Sia m SHF ■Safffif^iifSfflo HEMT , #M G F 4 4 0 5 A EM Vgdo(V) -4 Idss(hA) 10.00 30.00 60.00 Vds=2V, VGS=0 Gs:Associated gain s œi m , ©tsm, mm o Vgdo(V) -4 Idss(mA) 10. 00 30.00 60.00 Vds=2V,Vgs=0 Gs:Associated gain Vgso(V) -4 gm(mS , Š : SHF ÎSjgfSt^ttBfflo «¡g : HEMT GaAs FET. m : mma Vgdo(V) -4 Idss(mA) 10.00 30.00 60.00 ïds


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PDF MGF4403A 12GHz MGF4404A gaas fet gm
FHX04FA

Abstract: FHC30FA FHX04f
Text: Gm(mS) 45. 00 60.00 Vds=2V, Ids-IOiiA PT(mW)* 290 Vp(V) -0. 20 -1.00 -2.00 Vds-2V. Ids , ■■GaAs HEMT. Vds(V) 3 1dss(iA) 15.00 30. 00 60.00 Vds-2V,Vgs=0 Gas:fflWJi# ■i-,ir Vgs(V) -3 gm , idss(mA) 15.00 30. 00 60.00 Vds=2V. Vgs-0 ♦fflWP it: tyffittH UFHX04FA Vgs(V) -3 gmOnS) 35.00 45 , ) 15. 00 30.00 60.00 Vds=2V.Vgs=0 ♦fflfflfljil a.- fytmm !iFHX05FA Vgs(V) -3 gm(mS) 35. 00 45.00


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PDF FHC30FA 10ijiA I4FHC31FA UFHX04FA Ids-10Â 12GHz 10ihA. FHX05FA/LG iFHX05FA FHX04FA FHC30FA FHX04f
2SK1615

Abstract: No abstract text available
Text: 60.00 Vds=2V. Vgs=0 * SfêÂ'M» m ms&m^-.T Ju g ^=r>=3 D Vgso(V) -3 lYfsl(iS) 30. 00 50.00 Vds , • 2 S <1 6 1 7 BS fflü : SHF ímmm, SHF h RF itfBffl (HEMT) Vds(V) 3 Idss(jiA) 12. 00 60.00 Vds , RF käbo Vds(V) 3 Idss(mA) 12.00 60.00 Vds=2V.Vgs=0 t-.mm^nft í'jfi mzmmsn-.i \ G D Vgso(V) -4 gm


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PDF 12GHz 10hiA, 2SK1615
FHX35

Abstract: FHX35LG 12GHZ FHX06FA FHX15FA FHX16FA
Text: ¡««m. (fit : GaAs HEMT. ÏDS(V) 3 loss(«A) 15.00 30.00 60.00 Vds-2V, VGS=0 Gss:>J*fffflJÍ# ■a: f>mm , »<««0 Mia : GaAs HEMT. Vos(V) 3 I DSS(mA) 10.00 30.00 60.00 Vds=2V, Vgs=0 ♦ffiSPJf? a : e y mm , ®.mmmLo «««*#<> Sit : GaAs HEMT. VDS(V) 3 IDSS(biA) 10.00 30.00 60.00 Vds=2V. Vgs=0 ■tí. v-srnm , Vgdo(V)» -6 Ioss(mA) 15.00 40. 00 60.00 Vds=3V,Vgis=Vg2s=0 *Vg2S=0 G2 Gl D S Vgso(V)* -6 gm(mS


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PDF FHX06FA 12GHz 10raA. FHX15FA 10IIA 10raA MFGI100 FHX35 FHX35LG 12GHZ FHX06FA FHX16FA
1995 - HEMT-6000

Abstract: No abstract text available
Text: H 700 nm High Intensity Subminiature Emitter Technical Data HEMT-6000 Features High Radiant Intensity Narrow Beam Angle Nonsaturating Output Bandwidth: DC to 5 MHz IC Compatible/Low Current Requirement · Visible Flux Aids Alignment · · · · · Description The HEMT-6000 uses a GaAsP chip designed for optimum tradeoff between speed and quantum efficiency. This optimization allows a flat modulation bandwidth of 5 MHz without peaking, yet provides a radiant flux level comparable to that of 900 nm IREDs


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PDF HEMT-6000 HEMT-6000 5964-3818E
1999 - Not Available

Abstract: No abstract text available
Text: 700 nm High Intensity Subminiature Emitter Technical Data HEMT-6000 Features Description • • • • • The HEMT-6000 uses a GaAsP chip designed for optimum tradeoff between speed and quantum efficiency. This optimization allows a flat modulation bandwidth of 5 MHz without peaking, yet provides a radiant flux level comparable to that of 900 nm IREDs. The subminiature package allows operation of multiple closely-spaced channels, High Radiant Intensity Narrow Beam Angle


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PDF HEMT-6000 HEMT-6000 5953-0304E 5964-3818E
TGF2023-20

Abstract: T1G6003028-SP TGF2023-02 TGF2021-08-SG T1G6000528 TGF2023-10 TGF2023-01 EAR99 T1G6000528-Q3 TGF2023-05
Text: ) T1G6000528Q3 2500-6000 MHz Eval. Fix. RF Results (3 dB Compression) 30 Drain Eff. [%] 6000 MHz Eval. Fix. RF , [dB] PAE [%] 30 Drain Eff. [%] PAE [%] 20 PAE [%] 40 3500 60 6000 0 0 1000 , (%)[%] Drain Eff. [%] Gain [dB] PAE [%] Drain Eff. [%] PAE [%] PAE [%] 6000 GaN & GaAs RF


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SGH5002F

Abstract: SGH5712F SGH5003F SGM2004M
Text: „ /ha#fij?#l¡: i. <0 01~05© 5 * lì, □ níílS/JÑ '• 3 G D Vgso(V) -3 IDSS(uA) 15.00 60.00 100.00 ïds , 60.00 Vds=2V, 1d=15mA TchCC) 150 NF(dB)* 1.50 ïds=2V. ID=15mA, f=12GHz Ga(dB)* 9.50 10. 50


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PDF SGH5002F 12GHz SGH5003F 500//A SGM2004M SGH5712F
low noise hemt

Abstract: low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
Text: Tamb = +25°C "S" Parameters Vds = 2V, Ids = 31mA Freq. MHz 2000 3000 4000 5000 6000 7000 , inductance Frequency MHz 2000 4000 6000 8000 10000 12000 14000 16000 18000 Ref. : DSEC26237003


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PDF EC2623 12GHz EC2623 BMH204 12GHz DSEC26237003 low noise hemt low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
low noise x band hemt transistor

Abstract: Low Noise HEMT TC2623 transistor BP 109 BMH204 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
Text: = 2V, Ids = 26mA Freq. MHz 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 , 6000 8000 10000 12000 14000 16000 18000 Ref. : DSTC26237003 NF min dB 0.09 0.18 0.27


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PDF TC2623 12GHz TC2623 70mils BMH204 12GHz DSTC26237003 low noise x band hemt transistor Low Noise HEMT transistor BP 109 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
EM 257

Abstract: No abstract text available
Text: 'Wl-ÇfflGaAs F ET - 257 - - Aft il B ft * Ê fê m n ékj <8 is m n e > i 8 g m s m B * ^ ti * « * M S fk ft #MG F 1 9 0 2 EK S« : SHF Wa. : Nftï*'>3 y b+'<<) TY-H GaAs FET. Vgdo(V) -6 ioss(mA) 30.00 60.00 100.00 Vds=3V, Vgs=0 Gs:Associated gain v'gso(V) -6 gm(mS) 25.00 45 , 3 0 1 A EM Vgdo(V) -4 idss(mA) 10.00 30. 00 60.00 Vds=2V, Vgs=0 GsrAssociated gain sn G D S MiÉ m , 30.00 60.00 Vds=2V, Vgs=0 Gs:Associated gain s G ^=jj)=. D «Ê Sia m SHF zmimmmo HEMT GaAs FET


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PDF 12GHz EM 257
1998 - FHX35LP

Abstract: FHX35LG fujitsu hemt
Text: 86.6 .079 20.0 .446 -87.6 6000 .783 -117.5 3.132 71.6 .085 9.8 .439 , S-PARAMETERS FHX35LP VDS = 3V, IDS = 10mA FREQUENCY (MHZ) 1000 2000 3000 4000 5000 6000 7000 8000


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PDF FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt
FHX35LG

Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: .071 31.8 .462 -71.9 5000 .821 -101.6 3.436 86.6 .079 20.0 .446 -87.6 6000 .783 -117.5 3.132 71.6 , 3.279 91.4 .091 23.4 .467 -72.8 6000 .749 -113.7 3.044 76.0 .098 13.4 .434 -87.0 7000 .707 -129.7


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PDF 12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
12Ghz

Abstract: MGF4305A
Text: 30.00 60.00 Vds=2V,VGs=0 Gs:Associated gain m (Sia m SHF lf«fflo HEMT GaAs FET. ««Îfo Vgso(V) -4


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PDF 12GHz 12Ghz MGF4305A
2007 - Gan hemt transistor RFMD

Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Text: Tunable Frequency (MHz) DC- 6000 DC- 6000 DC- 6000 DC- 6000 DC- 6000 Psat (dBM) 40.0 44.8 47.8 49.5 50.8 Psat


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1998 - FHX13LP

Abstract: FHX14lp FHX13LG
Text: 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 S11 , FREQUENCY (MHZ) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) FHX14LG/LP 2-18GHz FCSI0598M200 FHX13LP FHX14lp FHX13LG
FHX13LP

Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
Text: 0.811 -91.6 4.213 89.7 0.053 29.3 0.502 -75.6 6000 0.763 -107.1 3.886 74.4 0.056 21.0 0.488 -89.6 7000 , 0.526 -51.4 5000 0.793 -87.1 4.555 94.9 0.064 35.2 0.494 -63.2 6000 0.732 -103.0 4.249 79.9 0.071 26.6


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) 2-18GHz FCSI0598M200 FHX13LP FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
1998 - Flr016xp

Abstract: FLR016XV GaAs FET HEMT Chips
Text: =36mA FLR016XP FREQ. (MHz) 500 1000 2000 3000 4000 5000 6000 7000 ` 8000 9000 10000 11000 12000 13000 14000 15000 , 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 S11 MAG


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PDF FLR016XP, FLR016XV FLR016XP) FLR016XV) FLR016XV Flr016xp GaAs FET HEMT Chips
2SK1844

Abstract: 2SK1845 12GHz 2SK1688 2SK1689 2SK1996 SHF-3 dbs3
Text: lYfsKmS) 40.00 60.00 Vds=2V, Id=10mA, f=lkHz PdW) 150 NF(dB) 0.70 0.95 Vds=2V. Id=10iA, f


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PDF 12GHz 12GHz* 12GHz 12GHz) 100ju Id-10iA, 2SK1844 2SK1845 2SK1688 2SK1689 2SK1996 SHF-3 dbs3
1998 - GaAs FET HEMT Chips

Abstract: No abstract text available
Text: 56.6 58.1 59.6 61.0 62.0 62.5 62.4 FREQUENCY (MHZ) 100 500 1000 2000 4000 6000 8000 10000 12000


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips
2004 - FHR02X

Abstract: FHX02X GaAs FET HEMT Chips
Text: FREQUENCY (MHZ) 100 500 1000 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000


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PDF FHR02X 18GHz FHX02X 4-22GHz FHR02X GaAs FET HEMT Chips
1998 - transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Text: FREQUENCY (MHZ) 100 500 1000 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips
1998 - FHR02FH

Abstract: fujitsu hemt
Text: -75.3 6000 .810 -109.1 3.233 80.2 .083 16.9 .470 -89.5 7000 .778


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PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 fujitsu hemt
1998 - high power FET transistor s-parameters

Abstract: FHR02X FHX02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
Text: FREQUENCY (MHZ) 100 500 1000 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000


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PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 high power FET transistor s-parameters FHR02X GaAs FET HEMT Chips fujitsu hemt GaAs FET chip
2004 - FHX02X

Abstract: GaAs FET HEMT Chips FHR02X transistor hemt
Text: FREQUENCY (MHZ) 100 500 1000 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000


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PDF FHR02X 18GHz FHX02X 4-22GHz GaAs FET HEMT Chips FHR02X transistor hemt
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