The Datasheet Archive

SF Impression Pixel

Search Stock

Renesas Electronics Corporation
HAT2129H-EL-E (Alt: HAT2129H-EL-E) HAT2129H-EL-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Asia HAT2129H-EL-E 0 16 Weeks 2,500 - - - - - More Info

HAT2129H datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
HAT2129H HAT2129H ECAD Model Renesas Technology Silicon N-Channel MOS FET Original PDF
HAT2129H HAT2129H ECAD Model Renesas Technology MOSFET, Switching; VDSS (V): 40; ID (A): 30; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3200; toff ( us) typ: 0.067; Package: LFPAK Original PDF
HAT2129H-EL-E HAT2129H-EL-E ECAD Model Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF

HAT2129H Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - HAT2129H

Abstract: No abstract text available
Text: HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0400Z (Previous ADE , of 10 3 1 2 HAT2129H Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , HAT2129H Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test , : 4. Pulse test Rev.4.00, Jun.23.2003, page 3 of 10 40 HAT2129H Main Characteristics , 25°C Tc = 75°C -25°C 10 0 2 4 6 Gate to Source Voltage 10 8 V GS (V) HAT2129H


Original
PDF HAT2129H REJ03G0049-0400Z ADE-208-1577B HAT2129H
2005 - HAT2129H-EL-E

Abstract: HAT2129H
Text: 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2129H-EL-E Quantity 2500 pcs , . HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0500 Rev.5.00 Sep 20, 2005 , Tch Tstg 20 32 20 150 ­55 to +150 A mJ W °C °C HAT2129H Electrical , 50 A/ µs HAT2129H Main Characteristics Power vs. Temperature Derating Maximum Safe , on State Resistance RDS(on) (m) HAT2129H 20 Pulse Test 15 ID = 20 A 5 A, 10 A 10 VGS


Original
PDF
2002 - HAT2129H

Abstract: ADE-208-1577B
Text: HAT2129H Silicon N Channel Power MOS FET Power Switching ADE-208-1577B(Z) Preliminary 3rd , 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 HAT2129H Absolute Maximum Ratings (Ta = , .2, Aug. 2002, page 2 of 5 HAT2129H Electrical Characteristics (Ta = 25°C) Item Symbol Min , HAT2129H Package Dimensions As of January, 2002 Unit: mm 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 , - - 0.080 g HAT2129H Disclaimer 1. Hitachi neither warrants nor grants licenses of any


Original
PDF HAT2129H ADE-208-1577B D-85622 D-85619 HAT2129H
2005 - HAT2129H

Abstract: HAT2129H-EL-E
Text: 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2129H-EL-E Quantity 2500 pcs , HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0500 Rev.5.00 Sep 20, 2005 , Tch Tstg 20 32 20 150 ­55 to +150 A mJ W °C °C HAT2129H Electrical , 50 A/ µs HAT2129H Main Characteristics Power vs. Temperature Derating Maximum Safe , on State Resistance RDS(on) (m) HAT2129H 20 Pulse Test 15 ID = 20 A 5 A, 10 A 10 VGS


Original
PDF HAT2129H REJ03G0049-0500 PTZZ0005DA-A) HAT2129H HAT2129H-EL-E
2005 - HAT2129H

Abstract: No abstract text available
Text: 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name HAT2129H-EL-E Quantity 2500 pcs , developed or manufactured by or for Renesas Electronics. HAT2129H Silicon N Channel Power MOS FET Power , €“55 to +150 Unit V V A A A A mJ W °C °C HAT2129H Electrical Characteristics (Ta = , „¦ IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 50 A/ µs HAT2129H Main Characteristics , |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2129H 20 Pulse Test


Original
PDF
2010 - HAT1125H

Abstract: ff 0401 HAT2270H LFPAK footprint Renesas uPA2749UT1A rjk305 RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
Text: HAT2116H HAT2119H HAT2129H HAT2132H HAT2134H HAT2137H HAT2139H HAT2140H HAT2141H HAT2142H


Original
PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas uPA2749UT1A rjk305 RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
2004 - H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD CR3AS-12 HAT1081R immobilizer antenna cr3as
Text: OK A 7 HAT2129H 40 ±20 30 20 (7.0) (9.5) 6.0 7.5 7.5 46 OK


Original
PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD CR3AS-12 HAT1081R immobilizer antenna cr3as
2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: No file text available


Original
PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: No file text available


Original
PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: No file text available


Original
PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
2007 - rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
Text: No file text available


Original
PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: No file text available


Original
PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Supplyframe Tracking Pixel