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Renesas Electronics Corporation
HAT2088R HAT2088R ECAD Model
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HAT2088R datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
HAT2088R HAT2088R ECAD Model Renesas Technology Silicon N Channel MOSFET High Speed Power Switching Original PDF
HAT2088R HAT2088R ECAD Model Renesas Technology MOSFET, Switching; VDSS (V): 200; ID (A): 2; Pch : 2.5; RDS (ON) typ. (ohm) @10V: 0.35; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 450; toff ( us) typ: 0.048; Package: SOP-8 Original PDF
HAT2088R HAT2088R ECAD Model Renesas Technology Silicon N-Channel MOS FET Original PDF
HAT2088R-EL-E HAT2088R-EL-E ECAD Model Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 2A 8SOP Original PDF

HAT2088R Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - HAT2088R

Abstract: No abstract text available
Text: products contained therein. HAT2088R Silicon N Channel MOSFET High Speed Power Switching ADE , Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2088R Absolute Maximum Ratings (Ta = 25°C) Item Symbol , 2 HAT2088R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit , Note: Note3 3. Pulse test 3 HAT2088R Main Characteristics Power vs. Temparature Derating , Source Voltage 8 10 V GS (V) HAT2088R 6 I D = 8A 4 5A 2 2A 12 4 8 Gate to


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2000 - HAT2088R

Abstract: Hitachi DSA00190
Text: HAT2088R N MOS FET ADJ-208-874D(Z) 5 `00.07 · · · SOP­8 8 , HAT2088R (Ta=25) · VDSS 200 V · VGSS ±30 V 2 A 16 , trr - 65 - ns I F = 2A, VGS = 0 diF/dt = 100A/µs ) 2 3. HAT2088R , 0 12 4 8 16 20 R DS(on) () V DS(on) (V) HAT2088R 5 VGS = 10 V , 0.5 V DS = 10 V 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 I D (A) 50 HAT2088R


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PDF HAT2088R ADJ-208-874D PW10s HAT2088R Hitachi DSA00190
2001 - Hitachi DSA0076

Abstract: HAT2088R
Text: HAT2088R Silicon N Channel MOSFET High Speed Power Switching ADE-208-1234 (Z) 1st. Edition , Drain S S S 1 2 3 HAT2088R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , duty cycle 1% 2. When using the glass epoxy board (FR4 40 × 40 ×1.6 mm), PW 10 s 2 HAT2088R , Note: Note3 3. Pulse test 3 HAT2088R Main Characteristics Power vs. Temparature Derating , Source Voltage 8 10 V GS (V) HAT2088R 6 I D = 8A 4 5A 2 2A 12 4 8 Gate to


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PDF HAT2088R ADE-208-1234 Hitachi DSA0076 HAT2088R
2005 - HAT2088R

Abstract: No abstract text available
Text: Information Part Name Quantity Shipping Container HAT2088R-EL-E 2500 pcs Taping Note: For some , HAT2088R Silicon N Channel MOS FET High Speed Power Switching REJ03G1183-0200 (Previous: ADE , 6 Source Gate Drain HAT2088R Absolute Maximum Ratings (Ta = 25°C) Item Drain to , 100 A/µs Note 3 HAT2088R Main Characteristics Maximum Safe Operation Area Power vs , | (S) Static Drain to Source on State Resistance RDS (on) () HAT2088R 2.5 Pulse Test VGS =


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PDF HAT2088R REJ03G1183-0200 ADE-208-1234) PRSP0008DD-D HAT2088R
2005 - HAT2088R

Abstract: No abstract text available
Text: Information Part Name Quantity Shipping Container HAT2088R-EL-E 2500 pcs Taping Note: For some , . HAT2088R Silicon N Channel MOS FET High Speed Power Switching REJ03G1183-0200 (Previous: ADE , 6 Source Gate Drain HAT2088R Absolute Maximum Ratings (Ta = 25°C) Item Drain to , 100 A/µs Note 3 HAT2088R Main Characteristics Maximum Safe Operation Area Power vs , | (S) Static Drain to Source on State Resistance RDS (on) () HAT2088R 2.5 Pulse Test VGS =


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2005 - Not Available

Abstract: No abstract text available
Text: HAT2088R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas , developed or manufactured by or for Renesas Electronics. HAT2088R Silicon N Channel MOS FET High Speed , S S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 Source Gate Drain HAT2088R Absolute , = 100 A/µs Note 3 HAT2088R Main Characteristics Maximum Safe Operation Area Power vs , Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT2088R 2.5 Pulse


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2005 - TVS 58V 400W

Abstract: SM0603 C2012X7R1E225K SMD npn TRANSISTOR 1a 200v vr3 diode smd SM 2220 "power sourcing equipment"
Text: thumb, the minimum rating on the primary MOSFET needs to be 103V. HAT2088R , a 200V part, was selected , 1 2 1 PART NUMBER ISL6844IU HAT2038R HAT2088R HAT2168H PBSS4240T PBSS5240T MMBZ5255B MMBZ5240B , , CR9 T1 QTY 1 1 1 1 1 1 1 1 1 2 1 PART NUMBER ISL6844IU HAT2038R HAT2088R MMBZ5255B MMBZ5240B SMAJ58A


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PDF AN1192 OT-23 TVS 58V 400W SM0603 C2012X7R1E225K SMD npn TRANSISTOR 1a 200v vr3 diode smd SM 2220 "power sourcing equipment"
2005 - Diode,Bridge Rectifier

Abstract: Diode, Schottky, SOD123 TVS 58V 400W C1608X7R1E473K J1 TRANSISTOR DIODE SOT-23 PACKAGE ISL6844EVAL2 ISL6844 HAT2168H HAT2088R AN1192
Text: a rule of thumb, the minimum rating on the primary MOSFET needs to be 103V. HAT2088R , a 200V part , HAT2038R MOSFET, N-channel, 60V, 0.058, 5A SOP-8 Renesas Q2 1 HAT2088R MOSFET , , N-channel, 60V, 0.058, 5A SOP-8 Renesas Q2 1 HAT2088R MOSFET, N-channel, 200V, 0.35, 2A


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PDF AN1192 1/16W Diode,Bridge Rectifier Diode, Schottky, SOD123 TVS 58V 400W C1608X7R1E473K J1 TRANSISTOR DIODE SOT-23 PACKAGE ISL6844EVAL2 ISL6844 HAT2168H HAT2088R
2001 - 7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
Text: hat2064r hat2068r hat2070r hat2071r hat2077r hat2080r hat2080t hat2085r hat2085t hat2087r hat2088r


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PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
2002 - lvc16244

Abstract: BC240 CBT1G125 2sk3174 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: COMPONENTS DATABOOK 2003 INDEX HAT2080R HAT2080T HAT2085R HAT2085T HAT2087R HAT2088R HAT2089R HAT2092R


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PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 CBT1G125 2sk3174 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: No file text available


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PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: No file text available


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PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: No file text available


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PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
2007 - rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
Text: No file text available


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PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: No file text available


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PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
2005 - E-MOSFET

Abstract: C2012X7R1A106K HAT2168-H-EL zener smd diode 3.3v 1w Diode,Bridge Rectifier HAT2168H-EL-E EEF-SD0G151R smd BRIDGE-RECTIFIER 2A SM0603 2a 200v schottky diode
Text: a rule of thumb, the minimum rating on the primary MOSFET needs to be 103V. HAT2088R-EL-E , a 200V , -8 Renesas Q2 1 HAT2088R-EL-E MOSFET, N-channel, 200V, 0.35, 2A SOP-8 Renesas Q3 1 , , N-channel, 60V, 0.058, 5A SOP-8 Renesas Q2 1 HAT2088R-EL-E MOSFET, N-channel, 200V, 0.35


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PDF AN1192 1/16W E-MOSFET C2012X7R1A106K HAT2168-H-EL zener smd diode 3.3v 1w Diode,Bridge Rectifier HAT2168H-EL-E EEF-SD0G151R smd BRIDGE-RECTIFIER 2A SM0603 2a 200v schottky diode
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