The Datasheet Archive

HAT2035R datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
HAT2035R HAT2035R ECAD Model Renesas Technology Silicon N Channel Power MOS FET High Speed Power Switching Original PDF
HAT2035R-EL-E HAT2035R-EL-E ECAD Model Renesas Technology Silicon N Channel Power MOS FET High Speed Power Switching Original PDF

HAT2035R Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - HAT2035R

Abstract: HAT2035R-EL-E
Text: 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT2035R-EL-E , HAT2035R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1242-0100 Rev.1.00 Jun. 09, 2005 Features · · · · Low on-resistance Capable of 4 V gate drive Low drive , HAT2035R Electrical Characteristics (Ta = 25°C) Item Symbol V(BR)DSS Drain to Source breakdown , = 5 V, ID = 0.5 A, VDD 30 V IF = 0.5 A, VGS = 0 diF/ dt = 50 A/µs HAT2035R Package


Original
PDF HAT2035R REJ03G1242-0100 PRSP0008DD-D Channe-900 Unit2607 HAT2035R HAT2035R-EL-E
2005 - Not Available

Abstract: No abstract text available
Text: Ordering Information Part Name HAT2035R-EL-E Quantity 2500 pcs. Shipping Container Taping Note , developed or manufactured by or for Renesas Electronics. HAT2035R Silicon N Channel Power MOS FET High , , page 1 of 3 Unit V V A A A W W °C °C HAT2035R Electrical Characteristics (Ta = 25 , / dt = 50 A/µs HAT2035R Package Dimensions RENESAS Code PRSP0008DD-D Package Name FP


Original
PDF do-900 Unit2607
2005 - Not Available

Abstract: No abstract text available
Text: 1.27 8° 6.20 y Detail F e x y Z L L1 Ordering Information Part Name HAT2035R-EL-E Quantity , Renesas Electronics. HAT2035R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1242 , mm) Rev.1.00 Jun. 09, 2005, page 1 of 3 HAT2035R Electrical Characteristics (Ta = 25 , Note4 IF = 0.5 A, VGS = 0 diF/ dt = 50 A/µs Rev.1.00 Jun. 09, 2005, page 2 of 3 HAT2035R


Original
PDF Unit2607
2005 - HAT2035R

Abstract: HAT2035R-EL-E
Text: 0.75 L L1 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT2035R-EL-E , . HAT2035R Silicon N Channel Power MOS FET High Speed Power Switching REJ03G1242-0100 Rev.1.00 Jun. 09 , x 1.6 mm) Rev.1.00 Jun. 09, 2005, page 1 of 3 Unit V V A A A W W °C °C HAT2035R , = 5 V, ID = 0.5 A, VDD 30 V IF = 0.5 A, VGS = 0 diF/ dt = 50 A/µs HAT2035R Package


Original
PDF d-900 Unit2607 HAT2035R HAT2035R-EL-E
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: No file text available


Original
PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
2007 - rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
Text: No file text available


Original
PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: No file text available


Original
PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
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