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Renesas Electronics Corporation
HAT1021R-EL-E HAT1021R-EL-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
America II Electronics HAT1021R-EL-E 8,416 - - - - - More Info
Chip1Stop HAT1021R-EL-E Cut Tape 1,395 200 - - - $0.0746 $0.0746 More Info

HAT1021R datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
HAT1021R HAT1021R ECAD Model Hitachi Semiconductor Silicon P Channel Power MOS FET High Speed Power Switching Original PDF
HAT1021R HAT1021R ECAD Model Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
HAT1021R HAT1021R ECAD Model Renesas Technology Silicon P Channel Power MOS FET High Speed Power Switching Original PDF
HAT1021R HAT1021R ECAD Model Toshiba Power MOSFETs Cross Reference Guide Original PDF
HAT1021R-E HAT1021R-E ECAD Model Renesas Technology Transistor Mosfet P-CH 20V 5.5A 8SOP Original PDF
HAT1021R-EL-E HAT1021R-EL-E ECAD Model Renesas Technology Transistor Mosfet P-CH 20V 5.5A 8SOP T/R Original PDF

HAT1021R Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Hitachi DSA002759

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 B (Z) 3rd , Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item , - ns IF = ­5.5A, VGS = 0 diF/ dt =20A/µs HAT1021R Main Characteristics Power vs , ) HAT1021R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage , A, ­5 A 0 40 80 120 160 Case Temperature Tc (°C) HAT1021R Body­Drain Diode Reverse Recovery


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PDF HAT1021R ADE-208-475 40x40x1 MS-012AA Hitachi DSA002759
V1LD

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-475 C , 3 771 HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage G ate to , mm), PW < 10s 772 HITACHI HAT1021R Electrical Characteristics (Ta = 25°C) Item Drain to , Temperature HITACHI 775 HAT1021R Body to Drain Diode Reverse Recovery Tim e Typical C apacitance vs , Charge Qg (nc) Drain Current I d (A) 776 HITACHI HAT1021R R everse Drain


OCR Scan
PDF HAT1021R ADE-208-475 WHAT1021R V1LD
HAT1021R

Abstract: MS-012AA Hitachi DSA0073
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 B (Z) 3rd , 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta , HAT1021R Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area ­100 , = ­25 °C 0 ­1 ­2 ­3 Gate to Source Voltage ­4 ­5 V GS (V) HAT1021R ­0.5 Drain , (A) HAT1021R Body­Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source


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PDF HAT1021R ADE-208-475 40x40x1 MS-012AA HAT1021R MS-012AA Hitachi DSA0073
chn 706

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features · · · · , , 8 Drain HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to , HITACHI HAT1021R Main Characteristics Power vs. Temperature Derating 4.0 Tes t Cornditio n : W(hen , HITACHI HAT1021R Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source , Current Case Temperature Tc (°C) Drain Current I (A) 4 HITACHI HAT1021R Body


OCR Scan
PDF HAT1021R ADE-208-475 D-85622 chn 706
2000 - Hitachi DSA00276

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475D (Z) 5th , 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item Drain to , (off) tf VDF t rr 2 HAT1021R Main Characteristics Power vs. Temperature Derating 4.0 Test , HAT1021R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage , A, ­5 A 0 40 80 120 160 Case Temperature Tc (°C) 4 HAT1021R Body­Drain Diode Reverse


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PDF HAT1021R ADE-208-475D D-85622 Hitachi DSA00276
1998 - Hitachi DSA002779

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 C 4th. Edition , Outline HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source , cycle 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 2 HAT1021R Electrical , , ID = ­3A VDD ­10V 3 HAT1021R Main Characteristics 4 HAT1021R 5 HAT1021R 6 HAT1021R 7 HAT1021R 8 HAT1021R Package Dimensions Unit: mm 9 HAT1021R When using


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PDF HAT1021R ADE-208-475 Hitachi DSA002779
Not Available

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features â , 3 ADE-208-475 C (Z) 4th. Edition June 1997 HAT1021R Absolute Maximum Ratings (Ta = 25 °C , transfer admittance HAT1021R Main Characteristics Maximum Safe Operation Area Power vs. Temperature , V qs (V) V gs (V) 3 HITACHI HAT1021R Drain to Source Saturation Voltage vs. Gate to , HITACHI HAT1021R Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source


OCR Scan
PDF HAT1021R ADE-208-475 MS-012AA
2000 - Not Available

Abstract: No abstract text available
Text: on these materials or the products contained therein. HAT1021R Silicon P Channel Power MOS FET , HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain , ) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr HAT1021R Main , ­10 V DS (V) HAT1021R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to , ­40 ­1 A, ­2 A, ­5 A 0 40 80 120 160 Case Temperature Tc (°C) HAT1021R Body­Drain Diode


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PDF D-85622
1997 - Hitachi DSA002751

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 C (Z) 4th , Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item Drain to , ­10V Note3 VDS = ­10V VGS = 0 f = 1MHz VGS = ­4V, ID = ­3A VDD ­10V 2 HAT1021R Main , DS (V) 3 HAT1021R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to , A, ­2 A, ­5 A 0 40 80 120 160 Case Temperature Tc (°C) 4 HAT1021R Body­Drain Diode


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PDF HAT1021R ADE-208-475 duty415-589-8300 D-85622 Hitachi DSA002751
1999 - HAT1021R

Abstract: MS-012AA Hitachi DSA00240
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 D (Z) 5th , 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta , HAT1021R Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area ­100 , °C 0 ­1 ­2 ­3 Gate to Source Voltage ­4 ­5 V GS (V) 3 HAT1021R ­0.5 Drain to , (A) HAT1021R Body­Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source


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PDF HAT1021R ADE-208-475 HAT1021R MS-012AA Hitachi DSA00240
2005 - HAT1021R-EL-E

Abstract: HAT1021R
Text: HAT1021R-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas , HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching REJ03G1144-0600 (Previous , S S S 1 2 3 Rev.6.00 Sep 07, 2005 page 1 of 6 Source Gate Drain HAT1021R Absolute , ­5.5 A, VGS = 0 IF = ­5.5 A, VGS = 0 diF/dt = 20 A/µs Note 3 Note 3 HAT1021R Main , ) () HAT1021R 0.20 Pulse Test 0.16 ­1 A, ­2 A ID = ­5 A 0.12 VGS = ­2.5 V 0.08 0.04 ­1 A, ­2


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PDF HAT1021R REJ03G1144-0600 ADE-208-475D) PRSP0008DD-D HAT1021R-EL-E HAT1021R
1998 - Hitachi DSA002752

Abstract: No abstract text available
Text: HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-475 D (Z) 5th , ­ 20 ± 10 ­ 5.5 ­ 44 ­ 5.5 Unit V V A A A Body­drain diode reverse drain current IDR HAT1021R , 5.5 A, VGS = 0 diF/ dt = 20 A/µs Note: 3. Pulse test 2 HAT1021R Main Characteristics Power , HAT1021R Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation , 0 40 80 120 160 Case Temperature Tc (°C) 4 HAT1021R Body­Drain Diode Reverse Recovery Time


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PDF HAT1021R ADE-208-475 Hitachi DSA002752
2005 - HAT1021R-EL-E

Abstract: HAT1021R
Text: 1.08 Ordering Information Part Name Quantity Shipping Container HAT1021R-EL-E 2500 pcs , . HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching REJ03G1144-0600 (Previous: ADE , Rev.6.00 Sep 07, 2005 page 1 of 6 Source Gate Drain HAT1021R Absolute Maximum Ratings (Ta , A, VGS = 0 diF/dt = 20 A/µs Note 3 Note 3 HAT1021R Main Characteristics Power vs , Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () HAT1021R


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PDF
2005 - Not Available

Abstract: No abstract text available
Text: 1.08 Ordering Information Part Name Quantity Shipping Container HAT1021R-EL-E 2500 pcs , developed or manufactured by or for Renesas Electronics. HAT1021R Silicon P Channel Power MOS FET High , of 6 Source Gate Drain HAT1021R Absolute Maximum Ratings (Ta = 25°C) Item Drain to , /µs Note 3 Note 3 HAT1021R Main Characteristics Power vs. Temperature Derating 3.0 , Resistance RDS (on) (Ω) HAT1021R 0.20 Pulse Test 0.16 –1 A, –2 A ID = –5 A 0.12 VGS =


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PDF
HAT2005F

Abstract: HAT1001F
Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type 2SJ408(L) 2SJ408(S) HAT1001F HAT1002F HAT1004F HAT1005F HAT1006F HAT1007F HAT1008F HAT1009F HAT2001F HAT2002F HAT2003F HAT2004F HAT2005F HAT2006F HAT2007F HAT2008F HAT2009F HAT2010F HAT3001F Replacement 2SJ505(L) 2SJ505(S) HAT1021R HAT1020R HAT1025R HAT1020R - HAT1020R HAT1020R HAT1024R HAT2019R


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PDF 2SJ408 HAT1001F HAT1002F HAT1004F HAT1005F HAT1006F HAT1007F HAT1008F HAT1009F HAT2005F
2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: .763


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PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
1997 - TO220CFM

Abstract: HAT2019R HAT2016R HAT1026R HAT1024R HAT1023R HAT1021R HAT1020R to-3p(i)d series TO-220CFM
Text: (Pch/X1) HAT1023R (Pch/X1) HAT1021R (Pch/X1) # HAT1026R (Pch/X1) # HAT1024R (Pch/X2) HAT1025R


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PDF 2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM HAT2019R HAT2016R HAT1026R HAT1024R HAT1023R HAT1021R HAT1020R to-3p(i)d series TO-220CFM
R8A77240

Abstract: R2A3 installation diagram of ip camera R2A30 R2A304 SH7724 r1ex24xxx R8A7724 cctv camera circuit diagram Wireless Camera Circuit Diagram
Text: diode Pow er MOS FET Standard IC Reset IC RKZxxKP, RKZxxKL series HRW0202A, other HAT1021R , other


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PDF SH7724) MS7724 264/MPEG4 R30CA0046EJ0100 R8A77240 R2A3 installation diagram of ip camera R2A30 R2A304 SH7724 r1ex24xxx R8A7724 cctv camera circuit diagram Wireless Camera Circuit Diagram
2000 - 74ls111

Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
Text: 2SK3229 2SK740 2SK975 HAT1016R HAT1020R HAT1021R HAT1023R HAT1024R HAT1025R HAT1026R HAT1029R HAT1031T


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PDF Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 74ls221 Spice hitachi mosfet audio application note 74LS123 spice 2sk2685 spice spice 74ls00
1997 - hitachi mosfet audio

Abstract: 2SK2830 D4L DIODE 2SK2225 2SJ214LS 2sk2829 2SK1919LS Hitachi MOSFET 2SK1058 transistors 2SK1317
Text: D5 -30 -5 0.13 0.07 860 ¡ JEDEC HAT1021R D5 -20 -5.5 0.060


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PDF O-220 HAF2001 500pcsxN) O-92MOD O-126MOD O-126FM O-220AB O-220FM O-220C SP-10 hitachi mosfet audio 2SK2830 D4L DIODE 2SK2225 2SJ214LS 2sk2829 2SK1919LS Hitachi MOSFET 2SK1058 transistors 2SK1317
2002 - lvc16244

Abstract: BC240 CBT1G125 2sk3174 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: H7N0602LDLSLM HAT1016R HAT1020R HAT1021R HAT1023R HAT1024R HAT1025R HAT1026R HAT1029R HAT1031T HAT1033T HAT1036R


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PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 CBT1G125 2sk3174 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
2000 - TO220CFM

Abstract: TO220FM HAT1040T 2SK2096 Hitachi DSA00276 TO-220CFM TO-220aB rr hat2070 2SK2978 2sk3148
Text: H5N5004PL H5N5005PL HAT1016R(D) HAT1020R HAT1021R HAT1023R HAT1024R(D) HAT1025R (D) HAT1026R HAT1029R (D


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PDF HAT1024R ADE-208-476G pdf\7420e HAT1044M HAT1053M HAT2053M HAT2054M TO220CFM TO220FM HAT1040T 2SK2096 Hitachi DSA00276 TO-220CFM TO-220aB rr hat2070 2SK2978 2sk3148
2001 - 7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
Text: h5n2510dlds h5n5001fm h5n5004pl h5n5005pl h5n5006fm h5n6001p hat1016r hat1020r hat1021r hat1023r hat1024r


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PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual AC538 IC 74LS47 BC245A HA13557 2SK3235
2000 - 2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Text: H5N5004PL H5N5005PL HAT1016R(D) HAT1020R HAT1021R HAT1023R HAT1024R(D) HAT1025R (D) HAT1026R HAT1029R (D


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PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
Text: (2 Chip) -12 HAT1033T -20 -20 -20 SOP-8 HAT1021R HAT1023R HAT1025R (2 Chip) -20 16 , ) 660 860 1200 2250 350 860 1700 (465) 560 920 780 1450 310 SOP-8 HAT1016R HAT1020R HAT1021R *3


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK1317 equivalent 2SJ182 equivalent 2SK215 equivalent 2SJ40 2sj332 2sk1058 equivalent
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