The Datasheet Archive

HAF2011(L) datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
HAF2011(L) HAF2011(L) ECAD Model Hitachi Semiconductor Power termal MOSFET Original PDF
HAF2011L HAF2011L ECAD Model Hitachi Semiconductor Silicon N Channel MOS FET Series Power Switching Original PDF
HAF2011(L) HAF2011(L) ECAD Model Renesas Technology Silicon N Channel MOS FET Series Power Switching Original PDF
HAF2011L HAF2011L ECAD Model Renesas Technology MOSFET, Switching; VDSS (V): 60; ID (A): 40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.015; RDS (ON) typ. (ohm) @4V[4.5V]: 0.025; RDS (ON) typ. (ohm) @2.5V: Ciss (pF) typ: toff ( us) typ: 34.5; Package: LDPAK (L) Original PDF
HAF2011(L)-(S) HAF2011(L)-(S) ECAD Model Hitachi Semiconductor Thermal MOS FETs Original PDF
HAF2011(L)/(S) HAF2011(L)/(S) ECAD Model Hitachi Semiconductor Thermal MOS FETs Original PDF

HAF2011(L) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - HAF2011

Abstract: HAF2011-90S HAF2011-90STL HAF2011-90STR PRSS0004AE-A
Text: HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching REJ03G1138 , 2. Drain 3. Source 4. Drain 2 3 HAF2011 ( L ), HAF2011 (S) Absolute Maximum Ratings (Ta = , Tsd VOP - 3.5 175 - - 12 °C V Channel temperature HAF2011 ( L ), HAF2011 (S , IF = 40 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V HAF2011 ( L ), HAF2011 (S) Main , | (S) Static Drain to Source on State Resistance RDS (on) () HAF2011 ( L ), HAF2011 (S) 100


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PDF HAF2011 REJ03G1138-0300 ADE-208-738A) HAF2011-90S HAF2011-90STL HAF2011-90STR PRSS0004AE-A
2000 - HAF2005

Abstract: HAF2011
Text: products contained therein. HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching , Shut­ down Circuit S 2 2 3 3 1. Gate 2. Drain 3. Source 4. Drain HAF2011 ( L , Test Conditions HAF2011 ( L ), HAF2011 (S) Electrical Characteristics (Ta = 25°C) Item Symbol , HAF2011 ( L ), HAF2011 (S) Main Characteristics Power vs. Temperature Derating Thermal shut down 200 , Width PW (S) 4 D= 100 m 1 10 HAF2011 ( L ), HAF2011 (S) Package Dimensions As of


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2000 - HAF2005

Abstract: HAF2011 Hitachi DSA00315
Text: HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching ADE-208-738A (Z) 2nd , 2 3 3 1. Gate 2. Drain 3. Source 4. Drain HAF2011 ( L ), HAF2011 (S) Absolute Maximum , HAF2011 ( L ), HAF2011 (S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , temperature rise of the over loaded condition. See characteristic curve of HAF2005. 3 HAF2011 ( L , = 100 m 1 10 HAF2011 ( L ), HAF2011 (S) Package Dimensions As of January, 2001 Unit: mm 2.54


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PDF HAF2011 ADE-208-738A HAF2005 Hitachi DSA00315
2007 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS , HAF2011 ( L ), HAF2011 (S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain current Drain , 3.5 V, VDS = 0 Channel temperature HAF2011 ( L ), HAF2011 (S) Electrical Characteristics (Ta = 25 , = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V HAF2011 ( L ), HAF2011 (S) Main , „¦) HAF2011 ( L ), HAF2011 (S) 100 VDS = 10 V Pulse Test 50 Tc = –25°C 20 10 25°C 75°C 5


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2000 - Hitachi DSA00167

Abstract: No abstract text available
Text: HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching ADE-208-738A (Z) 2nd , 2 3 3 1. Gate 2. Drain 3. Source 4. Drain HAF2011 ( L ), HAF2011 (S) Absolute Maximum , HAF2011 ( L ), HAF2011 (S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , temperature rise of the over loaded condition. See characteristic curve of HAF2005. 3 HAF2011 ( L , = 100 m 1 10 HAF2011 ( L ), HAF2011 (S) Package Dimensions Unit: mm 1.2 ± 0.2 0.4 ± 0.1


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PDF HAF2011 ADE-208-738A Sencin-2100 Hitachi DSA00167
1999 - HAF2011

Abstract: Hitachi DSA00357
Text: HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching Target specification , ­ down Circuit 1 1 S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain HAF2011 ( L , 2 Test Conditions HAF2011 ( L ), HAF2011 (S) Electrical Characteristics (Ta = 25°C) Item , . 3 HAF2011 ( L ), HAF2011 (S) Main Characteristics Power vs. Temperature Derating Channel , ) 200 HAF2011 ( L ), HAF2011 (S) Package Dimensions 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5


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PDF HAF2011 ADE-208-738 Hitachi DSA00357
2007 - HAF2011

Abstract: HAF2011-90S HAF2011-90STL HAF2011-90STR PRSS0004AE-A
Text: . HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching REJ03G1138-0500 Rev.5.00 Aug , 3. Source 4. Drain 2 3 HAF2011 ( L ), HAF2011 (S) Absolute Maximum Ratings (Ta = 25 , 0 Vi = 3.5 V, VDS = 0 Channel temperature HAF2011 ( L ), HAF2011 (S) Electrical Characteristics , HAF2011 ( L ), HAF2011 (S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation , Resistance RDS (on) () HAF2011 ( L ), HAF2011 (S) 100 VDS = 10 V Pulse Test 50 Tc = ­25°C 20 10


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2007 - HAF2011

Abstract: HAF2011-90S HAF2011-90STL HAF2011-90STR PRSS0004AE-A
Text: HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching REJ03G1138-0500 Rev , 3. Source 4. Drain 2 3 HAF2011 ( L ), HAF2011 (S) Absolute Maximum Ratings (Ta = 25 , 3.5 V, VDS = 0 Channel temperature HAF2011 ( L ), HAF2011 (S) Electrical Characteristics (Ta = 25 , 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 16 V HAF2011 ( L ), HAF2011 (S , Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () HAF2011 ( L ), HAF2011 (S


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PDF HAF2011 REJ03G1138-0500 PRSS0004AE-A HAF2011-90S HAF2011-90STL HAF2011-90STR PRSS0004AE-A
1998 - Hitachi DSA001652

Abstract: No abstract text available
Text: HAF2011 ( L ), HAF2011 (S) Silicon N Channel MOS FET Series Power Switching ADE-208-738 (Z) Target , temperature shut­down circuit · Latch type shut­down operation (Need 0 voltage recovery) HAF2011 ( L , 10µs, duty cycle 1 % 2. Value at Ta = 25°C HAF2011 ( L ), HAF2011 (S) Typical Operation , current Test Conditions 3 HAF2011 ( L ), HAF2011 (S) Electrical Characteristics (Ta = 25°C) Item , temperature when operete under over load condition. HAF2011 ( L ), HAF2011 (S) Main Characteristics Power vs


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PDF HAF2011 ADE-208-738 Hitachi DSA001652
2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: . 7 GaAs L i n e a r I C High Frequency Linear IC . 8 High , Type No. 2SB1407( L )/(S) 2SB1409( L )/(S) 2SD2121( L )/(S) 2SD2122( L )/(S) 2SD2123( L )/(S) Ratings , Status O O O O O O O O ·General Switching Ratings Package Type No. DPAK 2SC4499( L )/(S) 2SD2115( L )/(S) TO-220 2SB566(K) AB 2SB566A(K) 2SC2612 2SC2613 2SC2816 2SC2898 2SC2979 2SC4913 , Transistors) Package DPAK TO-220 AB Type No. 2SC4500( L )/(S) 2SD2124( L )/(S) 2SB727(K) 2SB791(K


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PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Text: -220FM 1391 TO-220FM 1392 TO-220FM 1399 TO-220FM 1400 TO-220FM 1407( L ) DPAK( L )-(1) 1407(S) DPAK(S) 1409( L ) DPAK( L )-(1) 1409(S) DPAK(S) 1494 TO-3P 1530 TO-220FM 1688 TO-92(1) 1691 MPAK 2SC , -92(2) 4367 TO-92MOD 4499( L ) DPAK( L )-(1) 4499(S) DPAK(S) 4500( L ) DPAK( L )-(1) 4500(S) DPAK(S , -220AB 1978 TO-92MOD 2046 TO-92MOD 2101 TO-220FM 2104 TO-220FM 2106 TO-220FM 2107 TO-220FM 2115( L ) DPAK( L )-(1) 2115(S) DPAK(S) 2121( L ) DPAK( L )-(1) 2121(S) DPAK(S) 2122( L ) DPAK( L )-(1) 2122(S


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PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
Text: TO-220FM 1392 TO-220FM 1399 TO-220FM 1400 TO-220FM 1407( L ) DPAK( L )-(1) 1407(S) DPAK(S) 1409( L ) DPAK( L )-(1) 1409(S) DPAK(S) 1494 TO-3P 1530 TO-220FM 1688 TO-92(1) 1691 MPAK !2SC , 3513 3793 4050 4196 4197 4260 4261 4262 4264 4265 4308 4366 4367 4499( L ) 4499(S) 4500( L , -92MOD DPAK( L )-(1) DPAK(S) DPAK( L )-(1) DPAK(S) CMPAK MPAK CMPAK MPAK TO-92MOD MPAK CMPAK UPAK , -220FM 2115( L ) DPAK( L )-(1) 2115(S) DPAK(S) 2121( L ) DPAK( L )-(1) 2121(S) DPAK(S) 2122( L ) DPAK( L )-(1


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PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 transistor h945 HITACHI 08122B 6030v4 2SC 8050 25aaj
2004 - H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD CR3AS-12 HAT1081R immobilizer antenna cr3as
Text: Impurity Type Maximum Ratings Package Type No. VDSS (V) VGSS (V) ID (A) LDPAK ( L , `04 H7N0607LD/LS DPAK ( L ) / (S) (25) (26) (34) (40) (56) OK 3Q `04 ±20 , -220AB 6 H7N0602LD/LS LDPAK ( L ) / (S) 85 4.3 5.2 6.0 7.8 OK OK H7N0608LD/LS , -92MOD HAT2152RJ DPAK ( L ) / (S) LDPAK ( L ) / (S) 6.5 8.5 8.5 13 OK 3Q '04 (3.0) (3.7 , -8 DPAK ( L ) / (S) Pch TO-92MOD Type No. 1-37 VDSS (V) VGSS (V) HAT1055RJ ID (A


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PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD CR3AS-12 HAT1081R immobilizer antenna cr3as
rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: =500kHz, L =0.44H, No Airflow 0 5 10 15 20 25 ex.1.5V 30 35 Output current (A , (Conventional product) Bottom MOSFET 5.3%UP 75 Vin=12V, Vout=1.3V, fsw=1MHz, L =0.44H, No Airflow , w/ function F 01 A For consumer use For special and custom use L E , 1E L M 1500-1599 Pin lead-free 3 w/ Bi W Wafer X Chip Q Table , 1.6 1.1 CMPAK-6(VHF) S 1.7 BB504M INPUT L G1 1.8 BB503M OUT PUT 21.5


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PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
2007 - rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
Text: . 7.0 34 Note 9 devices Hi x1 L Driver IC Vin = 12 V, Vout = 1.2 V VDR = 5 V, fsw = 500 kHz Ta = 25°C, L = 0.45 µH No Air Flow Vout DUT Lo x1 Index ■2SA Series Part No , 1418 1419 1421 1470 1472 1974 2655 2SJ Series Part No. 76 77 78 79 130( L ) 130(S) 160 161 162 181( L ) 181(S) 186 216 217 218 221 222 244 247 248 278 317 319( L ) 319(S) 350 351 352 386 387( L ) 387(S) ■■■■Package TO-92(1) TO-92(1) MPAK TO


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PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 rjk5020 RJP3065 4008ZB
2012 - RJJ0319DSP

Abstract: BCR8PM equivalent N0201 RJP30H2 rjj0319 NP109N055PUJ RJP30E2DPP rjk5020 smd marking 1F 6pin NP75N04YUG
Text: Efficiency Smaller packages L ead Forming and Taping Analog IC I Bipolar Transistors for Switching , Small-Signal Transistors (Transistors with Integrated Resistors) L w-Voltag ower MOSFETs Low-Voltage Power , 1 16 Power MOSFETs fo Lithium-Ion Battery Protection Circuits for L um-Ion Battery uits , —1 Renesas VP has been updated!! 92 L http://www.renesas.com/vp DrMOS Performance Analyzer Since , RJK0391DPAx1 82 Renesas discrete device evaluation board Ta = 25°C, no airflow L = 0.45μH 86 84


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PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent N0201 RJP30H2 rjj0319 NP109N055PUJ RJP30E2DPP rjk5020 smd marking 1F 6pin NP75N04YUG
RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f rjj0319 RJP30H3 BCR1AM-12A equivalent RJJ0606
Text: Smaller packages L ead Forming and Taping Package Drawings Product Numbers Applications , power consumption overall. I Powre MOSFET L w-Voltag Power MOSFETs Low-Voltage Power MOSFETs g , Circuits for L um-Ion Battery uits 17 IC-MOSFET Integrated SiP P egrated SiP Product Series 19 , =5V 94 92 L 90 Vout Efficiency(%) Driver IC 88 RJK03B9DPAx1 RJK03C0DPAx1 RJK03B9DPAx1 RJK0391DPAx1 82 Renesas discrete device evaluation board Ta = 25°C, no airflow L = 0.45µH


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PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f rjj0319 RJP30H3 BCR1AM-12A equivalent RJJ0606
2001 - 2SB564-AZ(L)

Abstract: No abstract text available
Text: ). 1 input / 1 switching pin method (CK and U / D input modes). : All output is at the " L " level : No , EM GND R E D C B A E D C B A VCC All output becomes " L " when power down is " L " Phase home position monitor Input pulse monitor Excitation monitor GND Reset when the reset input is " L " E Output D Output C , ~ E U / D, P D, R ZO, CO, EM 3 2001-08-27 TB6528P TRUTH TABLE A CU CD L L L L L L CK L L U/D (*) (*) H L FUNCTION CW CCW CW CCW Note 1: * means Don't Care Note 2: The CU pin is an


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PDF TB6528P TB6528P 2SB564-AZ(L)
1998 - CL-GD6440

Abstract: 65550 CHIPS AND10C209A-DHB cl-gd64 GD6440 AND10C273-DHB INVR1918 display connector y 640
Text: ­ ton ­ ­ 50 ms toff ­ ­ 50 ms L ­ 500 ­ cd/m2 %RH , Clock " L " Time t6 10.0 ­ ­ ns Clock "H" Time t7 7.0 ­ ­ ns Set Up , G1 G0 B5 B4 B3 B2 B1 B0 Gray Scale Level Black L L L L L L L L L L L L L L L L L L ­ Blue L L L L L L L L L L L L H H H H H H ­ Green Basic Color R5 L


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PDF AND10C209A-DHB AND10C273-DHB CL-GD6440 65550 CHIPS AND10C209A-DHB cl-gd64 GD6440 AND10C273-DHB INVR1918 display connector y 640
1995 - STI3400

Abstract: STI4500
Text: fifold fifowen istype 'com,neg'; istype 'com,neg'; istype 'com,neg'; "constant declarations L , ; "define state machines AUDIO = [audcs,audrdy,q0,q1]; AIDLE = [ L , L , L , L ]; A0 = [ L , L ,H, L ]; "allow for setup time A1 = [H, L , L , L ]; "assert chip select A2 = [H, L ,H, L ]; "continue cycle A3 = [H, L , L ,H]; "wait for await signal A4 = [H,H, L , L ]; "read cycle ready A5 = [ L ,H, L , L ]; "dummy audio read cycle ready A6 = [ L ,H, L ,H]; "write cycle ready VIDEO = [vidcs,vidrd,vidwr,vidrdy, q2]; VIDLE = [ L , L , L , L , L ]; V0 =


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PDF MACH220A' 0xe60b 0x350b STI3400 STI4500. PCI9060 16-bit. 0x2043 STI4500
H107L

Abstract: W32 MARKING MC 68 H 705 da 128 H217H L117l
Text: B2 B1 B0 na L L X X X X X X X X L L L L na L H X X X X X X X X OC OC OC OC na H L X X X X X X X X , A3 a2 A1 A0 B3 B2 B1 B0 0 L L L L L L L L H H L L 32 L L H L L L L L L L H L 1 L L L L L L L L H L L 33 L L H L L L L L H L L 2 L L L L L L L L H H 34 L L H L L L L L H H H 3 L L L L L L L H H 35 L L H L L L L H H Ü 4 L L L L H L L L H L L 36 L L M L L H L L L H H 5 L L L L L H L H L L 37 L L H L L H L H H H 6 L L L L L H L L H H L 38 L L H L L H L L L H H 7 L L L L L H


OCR Scan
PDF MIL-M-38510/202B MIL-M-38510/202A 1984-705-040/A3435 H107L W32 MARKING MC 68 H 705 da 128 H217H L117l
2014 - Not Available

Abstract: No abstract text available
Text: . [mV] Power Dissipation 1.5 In max. [mW] Melting I²t 10.0 Intyp. [A²s] S L T Order Number 0.05 250 1) 550 415 155 0.03 l l l l l 0034.6602 █ 0.063 250 1) 480 420 160 0.05 l l l l l 0034.6603 █ 0.08 250 1) 400 360 165 0.06 l l l l l 0034.6604 █ 0.1 250 1) 350 320 170 0.08 l l l l l 0034.6605 █ 0.125 250 1) 300


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PDF com/PG01 E41599
LTM08C355S

Abstract: lcd inverter circuit diagram toshiba toshiba LCD TOSHIBA FL INVERTER TOSHIBA LTM08C355S Toshiba lcd cable inverter pin diagram chips 69000 inverter ccfl toshiba toshiba 26 lcd power supply lcd inverter input circuit diagram toshiba
Text: Time Luminance ( L ) (tON) (tOFF) Min. 100 -90 Typ. 250 -145 Max. -50 50 - , X,Y t2 t1 DD (V) 800,Y VI L =( M A X):0.2 V VI H =( MI N):0.8 V DD (V) DD (V) Input Signal Center Level : 0.5 V VI L =( M A X):0.2 V DD (V) 798,Y X,600 t3 799,Y , Vertical Display Term One Line Scanning Time Horizontal Display Term Clock Period Clock " L " Time , ) Note 1) Refer to "TIMING CHART" . Note 2) If ENAB is fixed to "H" or " L " level for certain period


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PDF LTM08C355S 190gTYP) LTM08C355S lcd inverter circuit diagram toshiba toshiba LCD TOSHIBA FL INVERTER TOSHIBA LTM08C355S Toshiba lcd cable inverter pin diagram chips 69000 inverter ccfl toshiba toshiba 26 lcd power supply lcd inverter input circuit diagram toshiba
LTM08C343S

Abstract: SM02 toshiba lcd SD-53885 TOSHIBA FL INVERTER
Text: Luminance ( L ) (tON) (tOFF) Min. 100 -50 90 Typ. 250 -70 130 Max. -50 50 , t4 t3 X,Y t2 t1 DD (V) 800,Y VI L =( M A X):0.2 V VI H =( MI N):0.8 V DD (V) DD (V) Input Signal Center Level : 0.5 V VI L =( M A X):0.2 V DD (V) 798,Y X , Vertical Display Term One Line Scanning Time Horizontal Display Term Clock Period Clock " L " Time , ns 1) When ENAB is fixed to "H" level or " L " level after NCLK input, the panel is displayed as


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PDF LTM08C343S 190gTYP) LTM08C343S SM02 toshiba lcd SD-53885 TOSHIBA FL INVERTER
TB6528P

Abstract: No abstract text available
Text: modes). : All output is at the " L " level Excitation mode protection function : No fluctuations in , EB 7 EC 8 PD All output becomes " L " when power down is " L " 9 ZO Phase home , Truth table B GND 13 R Reset when the reset input is " L " 14 E E Output 15 D , 2003-08-05 TB6528P TRUTH TABLE A CU CD CK U/D FUNCTION L L * CW L * CCW L L L H CW L L L CCW Note 1: * means Don't Care Note 2: The CU pin is


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PDF TB6528P TB6528P
Supplyframe Tracking Pixel