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HAF2006R datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
HAF2006R HAF2006R ECAD Model Renesas Technology Silicon N Channel MOS FET Series Power Switching Original PDF

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1998 - HAF2006R

Abstract: MS-012AA Hitachi DSA00241
Text: HAF2006R Silicon N Channel MOS FET Series Power Switching ADE-208-689 (Z) Target , , 6, 7, 8 Drain Gate Shut­ down Circuit 3 S HAF2006R Absolute Maximum Ratings (Ta = 25 , Gate operation voltage VOP 3.5 - 12 V 2 Test Conditions HAF2006R Electrical , . 3 HAF2006R Main Characteristics Power vs. Temperature Derating Test Condition : When using , 100 Ambient Temperature 4 150 Ta (°C) 200 HAF2006R Package Dimensions Unit: mm 1


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PDF HAF2006R ADE-208-689 HAF2006R MS-012AA Hitachi DSA00241
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