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Renesas Electronics Corporation
HAF2001-90-E - Bulk (Alt: HAF2001-90-E) HAF2001-90-E ECAD Model
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Avnet HAF2001-90-E Bulk 0 1 Weeks 120 - - - $2.79255 $2.625 Buy Now
Rochester Electronics HAF2001-90-E 1,267 1 $3.4 $3.4 $3.03 $2.76 $2.76 Buy Now
Renesas Electronics Corporation
HAF200190E HAF200190E ECAD Model
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ComS.I.T. HAF200190E 2,075 - - - - - Get Quote

HAF2001 datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
HAF2001 HAF2001 ECAD Model Hitachi Semiconductor Mosfet Guide Original PDF
HAF2001 HAF2001 ECAD Model Hitachi Semiconductor Thermal MOS FETs Original PDF
HAF2001 HAF2001 ECAD Model Renesas Technology Silicon N Channel MOS FET Series Power Switching Original PDF
HAF2001 HAF2001 ECAD Model Renesas Technology Silicon N Channel MOS FET Power Switching Original PDF
HAF2001-90 HAF2001-90 ECAD Model Renesas Technology Silicon N Channel MOSFET Series Power Switching Original PDF
HAF2001-E HAF2001-E ECAD Model Renesas Technology FET Transistor: Silicon N Channel MOS FET Series Power Switching Original PDF

HAF2001 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - Hitachi DSA002759

Abstract: No abstract text available
Text: ADE­208­353 B (Z) THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 , HAF2001 Item Input voltage Symbol VIH VIL Input current (Gate non shut down) IIH IIL II Input current , - - HAF2001 , HAF2001 Power vs. Temperature Derating 80 Pch (W) I D (A) 500 Maximum Safe Operation Area 60 , Source Voltage 4 5 V GS (V) HAF2001 Drain to Source Saturation Voltage vs. Gate to Source


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PDF HAF2001 220AB 220AB Hitachi DSA002759
HD74LS08

Abstract: HAF2001 Hitachi DSA0073
Text: ADE­208­353 B (Z) THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 , HAF2001 Item Symbol Min Typ Max Unit Test conditions , - HAF2001 Table 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , HAF2001 Power vs. Temperature Derating 500 I D (A) 60 Drain Current Channel Dissipation , °C 75 °C 20 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) HAF2001 Static


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PDF HAF2001 220AB HD74LS08 HAF2001 Hitachi DSA0073
1999 - Hitachi DSA002780

Abstract: No abstract text available
Text: HAF2001 Silicon N-Channel MOS FET Series ADE-208-353C 4th Edition Application Power , shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline HAF2001 Absolute , Vi = 3.5 V, VDS = 0 Channel temperature Test conditions 2 HAF2001 Electrical Characteristics , rise of the over loaded condition. 3 HAF2001 4 HAF2001 5 HAF2001 6 HAF2001 7 HAF2001 8 HAF2001 When using this document, keep the following in mind: 1. This


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PDF HAF2001 ADE-208-353C Hitachi DSA002780
Not Available

Abstract: No abstract text available
Text: HAF2001 Silicon N-Channel MOS FET Series HITACHI ADE-208-353C 13th. Edition Application , -22QAB 1. Gate 2. Drain (Flange) 3. Source 646 HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item , the over loaded condition. 648 HITACHI HAF2001 Power vs. Temperature Derating Maximum Safe , to Source Voltage 4 5 VGS (V) HITACHI 649 HAF2001 Drain to Source Saturation Voltage vs , Temperature Tc (°C) 160 Drain Current I (A) 650 HITACHI HAF2001 Body to Drain Diode Reverse


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PDF HAF2001 ADE-208-353C O-22QAB
Not Available

Abstract: No abstract text available
Text: HAF2001 Silicon N-Channel MOS FET Series HITACHI November 1996 Application Power switching , ) Outline HAF2001 Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Ratings 60 Drain to , perature Tsd 175 °C Channel tem perature 2 HITACHI HAF2001 Electrical , . Including the junction tem perature taise of the over loaded condition. HITACHI 3 HAF2001 ro , Characteristics Drain to Source Voltage 4 HITACHI V ds (V) HAF2001 Typical Transfer


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PDF HAF2001 D-85622
1998 - Hitachi DSA002749

Abstract: No abstract text available
Text: HAF2001 Silicon N-Channel MOS FET Series November 1996 Application Power switching Over , HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to , V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature Test conditions 2 HAF2001 Electrical , condition. 3 HAF2001 Power vs. Temperature Derating 80 Pch (W) Channel Dissipation 60 40 20 , Current I D (A) 40 10 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 4 HAF2001


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PDF HAF2001 220AB D-85622 Hitachi DSA002749
1999 - HAF2001

Abstract: HD74LS08
Text: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353 D (Z) 5th. Edition , . Source 4. Drain HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit , 13 V 2 Test Conditions HAF2001 Electrical Characteristics (Ta = 25°C) Item Symbol , temperature when operate under over load condition. 3 HAF2001 Main Characteristics Power vs , Gate to Source Voltage V 4 (V) GS 5 HAF2001 Pulse Test 1.6 1.2 I D = 20 A 0.8


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PDF HAF2001 ADE-208-353 220AB HAF2001 HD74LS08
2005 - HAF2001

Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
Text: Ordering Information Part Name Quantity Shipping Container HAF2001-90 Max: 50 pcs/sack Sack , HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0600 (Previous: ADE , 3 S Rev.6.00 Sep 07, 2005 page 1 of 8 HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item , VOP - 3.5 175 - - 13 °C V Channel temperature HAF2001 Electrical , 07, 2005 page 3 of 8 HAF2001 Main Characteristics Power vs. Temperature Derating Maximum


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PDF HAF2001 REJ03G1134-0600 ADE-208-353D) PRSS0004AC-A HAF2001 HAF2001-90 HD74LS08 PRSS0004AC-A
2000 - HAF2001

Abstract: HD74LS08 DSA003641
Text: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353D (Z) 5th. Edition Mar , . Source 4. Drain HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit , 13 V 2 Test Conditions HAF2001 Electrical Characteristics (Ta = 25°C) Item Symbol , temperature when operate under over load condition. 3 HAF2001 Main Characteristics Power vs , Gate to Source Voltage V 4 (V) GS 5 HAF2001 Pulse Test 1.6 1.2 I D = 20 A 0.8


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PDF HAF2001 ADE-208-353D 220AB HAF2001 HD74LS08 DSA003641
2006 - HAF2001

Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A HD74LS0
Text: Name HAF2001-90 Quantity Max: 50 pcs/sack Shipping Container Sack Note: For some grades , HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0700 (Previous: ADE , 3 S Rev.7.00 Apr 27, 2006 page 1 of 8 HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item , VOP HAF2001 Electrical Characteristics (Ta = 25°C) Item Symbol ID1 ID2 V (BR) DSS V , 8 HAF2001 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area


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PDF HAF2001 REJ03G1134-0700 ADE-208-353D) PRSS0004AC-A HAF2001 HAF2001-90 HD74LS08 PRSS0004AC-A HD74LS0
2000 - HAF2001

Abstract: HD74LS08
Text: products contained therein. HAF2001 Silicon N Channel MOS FET Series Power Switching ADE , 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain HAF2001 Absolute Maximum Ratings (Ta = , HAF2001 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test , load condition. 3 HAF2001 Main Characteristics Power vs. Temperature Derating 500 I D , GS (V) HAF2001 2.0 Pulse Test 1.6 1.2 I D = 20 A 0.8 0.5 Pulse Test 0.2 0.1


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2006 - Not Available

Abstract: No abstract text available
Text: 0.5 ± 0.1 Ordering Information Part Name HAF2001-90 Quantity Max: 50 pcs/sack Shipping Container , Renesas Electronics. HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134 , .7.00 Apr 27, 2006 page 1 of 8 HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source , V, VDS = 0 Channel temperature Rev.7.00 Apr 27, 2006 page 2 of 8 HAF2001 Electrical , under over load condition. Rev.7.00 Apr 27, 2006 page 3 of 8 HAF2001 Main Characteristics


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2006 - HAF2001

Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
Text: Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part Name HAF2001-90 Quantity , . HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0700 (Previous: ADE-208-353D) Rev , .7.00 Apr 27, 2006 page 1 of 8 HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source , HAF2001 Electrical Characteristics (Ta = 25°C) Item Symbol ID1 ID2 V (BR) DSS V (BR) GSS V , temperature when operate under over load condition. Rev.7.00 Apr 27, 2006 page 3 of 8 HAF2001 Main


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2006 - Not Available

Abstract: No abstract text available
Text: Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 Ordering Information Part Name HAF2001-90 Quantity , developed or manufactured by or for Renesas Electronics. HAF2001 Silicon N Channel MOS FET Series Power , of 8 HAF2001 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain current Drain , Channel temperature HAF2001 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ , HAF2001 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID


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2SJ177

Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
Text: . 641 HAF2001.


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PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
1998 - Hitachi DSA002732

Abstract: No abstract text available
Text: raise of the over loaded condition. · See characteristic curve of HAF2001. Main Characteristics


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PDF HAF2002 ADE-208-503 Hitachi DSA002732
2SH14

Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Text: -220FM Type No. HAF2001 HAF2002 Ratings Voss(V) to (A) 60 60 20 20 4V RDS (ON) (Cl) Characteristics Tsd


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PDF 2SK1197 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 2SK1056 2SK1087 2SK1058 2SK2220 2SH14 2SH21 2SH11 2SH19 6AM13 4AK19
sd2t

Abstract: No abstract text available
Text: . · See characteristic curve of HAF2001. Main Characteristics Power vs. Temperature Derating 500


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PDF HAF2002 ADE-208-503 -220FM HAF2001. sd2t
1999 - Hitachi DSA002759

Abstract: No abstract text available
Text: curve of HAF2001. Main Characteristics 4 HAF2002 5 HAF2002 Package Dimensions Unit


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PDF HAF2002 ADE-208-503 Hitachi DSA002759
2000 - HAF2001

Abstract: HAF2012 Hitachi DSA00240
Text: . · See characteristic curve of HAF2001. 3 HAF2012(L), HAF2012(S) Main Characteristics Power


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PDF HAF2012 ADE-208-677A Sencin-2100 HAF2001 Hitachi DSA00240
2000 - power supply 50w 24v medical

Abstract: HAF2001 HAF2002 DSA003642
Text: HAF2001. 3 HAF2002 Main Characteristics Power vs. Temperature Derating 500 I D (A) 30


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PDF HAF2002 ADE-208-503A 220FM power supply 50w 24v medical HAF2001 HAF2002 DSA003642
1999 - HAF2001

Abstract: HAF2002
Text: HAF2001. 3 HAF2002 Main Characteristics Power vs. Temperature Derating 500 I D (A) 30


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PDF HAF2002 ADE-208-503 220FM HAF2001 HAF2002
2000 - HAF2012

Abstract: HAF2001 Hitachi DSA00315
Text: . · See characteristic curve of HAF2001. 3 HAF2012(L), HAF2012(S) Main Characteristics Power


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PDF HAF2012 ADE-208-677A HAF2001 Hitachi DSA00315
2000 - HAF2001

Abstract: HAF2002
Text: . See characteristic curve of HAF2001. 3 HAF2002 Main Characteristics Power vs. Temperature


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2000 - HAF2001

Abstract: HAF2012
Text: loaded condition. · See characteristic curve of HAF2001. 3 HAF2012(L), HAF2012(S) Main


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