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Renesas Electronics Corporation
HAF1002-90L - Bulk (Alt: HAF1002-90L) HAF1002-90L ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet HAF1002-90L Bulk 0 1 Weeks 47 - - $7.33793 $6.65 $6.65 More Info
Rochester Electronics HAF1002-90L 292 1 $8.61 $8.61 $7.67 $7 $7 More Info

HAF1002-90L datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
HAF1002-90L HAF1002-90L ECAD Model Renesas Technology Silicon P Channel MOS FET Series Power Switching Original PDF

HAF1002-90L Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - HAF1002-90L

Abstract: HAF1002 HAF1002-90S HAF1002-90STL PRSS0004AE-A REJ03G1133-0200
Text: ), HAF1002(S) Ordering Information Part Name Quantity Shipping Container HAF1002-90L HAF1002


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PDF HAF1002 REJ03G1133-0200 ADE-208-586) HAF1002-90L HAF1002-90S HAF1002-90STL PRSS0004AE-A REJ03G1133-0200
2005 - Not Available

Abstract: No abstract text available
Text: ), HAF1002(S) Ordering Information Part Name Quantity Shipping Container HAF1002-90L HAF1002


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PDF
2005 - HAF1002

Abstract: HAF1002-90L HAF1002-90S HAF1002-90STL PRSS0004AE-A
Text: ), HAF1002(S) Ordering Information Part Name Quantity Shipping Container HAF1002-90L HAF1002


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PDF
2000 - HAF1001

Abstract: HAF1002 Hitachi DSA00315
Text: No file text available


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PDF HAF1002 ADE-208-586 HAF1001 Hitachi DSA00315
2000 - HAF1001

Abstract: HAF1002
Text: No file text available


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PDF
1999 - Hitachi DSA002759

Abstract: No abstract text available
Text: No file text available


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PDF HAF1002 ADE-208-586 Hitachi DSA002759
1999 - HAF1001

Abstract: HAF1002 Hitachi DSA00240
Text: No file text available


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PDF HAF1002 ADE-208-586 HAF1001 Hitachi DSA00240
mbl8086

Abstract: ITT taa 775 MBB421-90 MB8421 d480 7777tV A8LC 860I
Text: . 4-53 FUJITSU MICROELECTRONICS 47E D ■374<ì7bE GDlcìG4b 3 «FMI MB8421/22-90/- 90L /-90LL MB8421 , -46-23-12 MB8421/22-90/- 90L /-90LL MB8421 /22-12/-12L/-12LL Fig. 1 - BLOCK DIAGRAM OF MB8421/22 NOTES: MB8421 only , ¬7bE GDlcìG4b 3 «FMI MB8421 /22-90/- 90L /-90LL T-46-23-12 MB8421 /22-12/-12L/-12LL PIN ASSIGNMENTS MB8421 - , -46-23-12 MB8421 /22-90/- 90L /-90LL MB8421 /22-12/-12L/-12LL NON-CONTENTION READ/WRITE CONTROL LEFT PORT IN PUTS1 , MB8421 /22-90/- 90L /-90LL MB8421/22-12/-12L/-12LL T-46-23-12 When both CSL and cSr are low at the same


OCR Scan
PDF MB8421/8422 90/-90U-90LU-i2/-i2L/-i2LL 16K-BIT MB8421 MB8422 FB4013S-2C T-46-23-12 mbl8086 ITT taa 775 MBB421-90 d480 7777tV A8LC 860I
2001 - Not Available

Abstract: No abstract text available
Text: word x 16 bit) Mobile Phone Application Specific Memory MB82D01161-85/85L/90/ 90L CMOS 1,048,576 , ) 85L 90 85ns 90L 90ns Active Current ( IDDA1 Max ) 20mA Standby Current ( IDDS1 Max , 48-ball plastic FBGA (BGA-48P-M16) (BGA-48P-M18) 100µA MB82D01161-85/85L/90/ 90L s , /90/ 90L s PIN ASSIGNMENTS (TOP VIEW) Flash Compatible FBGA (suffix PBT) SRAM Compatible FBGA , /Output VDD Power Supply VSS Ground NC No Connection 3 MB82D01161-85/85L/90/ 90L s


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PDF DS05-11405-1E 16Mbit MB82D01161-85/85L/90/90L 576-WORD MB82D01161 16-bit MB82D01161 F0112
2001 - Not Available

Abstract: No abstract text available
Text: 16 Mbit (1 M word × 16 bit) Mobile Phone Application Specific Memory MB82D01171A-90/- 90L /-90LL , ) Power Down Current (Max.) (IDDP) 200 µA Max. MB82D01171A 90 90L 90 ns 20 mA 100 µA Max. 10 µA 70 µA Max , , Japan MB82D01171A-90/- 90L /-90LL s FEATURES · · · · Asynchronous SRAM Interface 1 M × 16 organization Fast Random Cycle Time: tRC = 90 ns Low Power Consumption VDD standby current: 90: 200 µA 90L : 100 , current: 10 µA · · · · 2 MB82D01171A-90/- 90L /-90LL s PIN ASSIGNMENT (Top View) 1 2 3 4 5 6


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PDF DS05-11404-1E MB82D01171A-90/-90L/-90LL 576-WORD MB82D01171A 16-bit F0104
2006 - 0720E

Abstract: gas supressor 2300d 0900D 230L 350t 600t 621 suppressor 55a 1300b C2600
Text: supressor, 2-element gas tube type, Series 55A (55A-75, -75L, -90, - 90L , -150, -150L, -230, 230L, -250 , leads; Series 63A (63A-75, -75L, -90, - 90L , -150, -150L, -230, -230L, -250, -250L, -300, -300L, -350 , , -75L, -90, - 90L , -150, -150L, -230, -230L, -250, -250L, -300, 300L, -350, -350L, -400, -400L, -420 , lead; Series V80A ( V80A -75, -75L, -90, - 90L , -150, -150L, -230, -230L, -250, -250L, -300, -300L , .) Transient voltage surge suppressor, 3-element gas tube type, Series 72B (72B-75, -75L, -90, - 90L , -150


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PDF E187844 E187844 0720E gas supressor 2300d 0900D 230L 350t 600t 621 suppressor 55a 1300b C2600
2001 - F0110

Abstract: 004C2000
Text: bit) Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/ 90L CMOS 1,048,576-WORD x 16 , Stabdby Current ( IDDS1 Max. ) 200µA 100µA 200µA Power Down Current ( IDDP Max. ) s 90L , /- 90L (AE5.0E) s Confidential PIN ASSIGNMENT (TOP VIEW) Flash Compatible FBGA (suffix PBT , VDD VSS Ground NC 2 Power Supply No Connection MB82D01161 -85/-85L/-90/- 90L (AE5 , -85/-85L/-90/- 90L (AE5.0E) s Confidential FUNCTION TRUTH TABLE *1 Mode CE1 OE LB


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PDF MB82D01161-85/-85L/-90/90L 576-WORD MB82D01161 16-bit 16bit 90nany F0110 F0110 004C2000
B84311

Abstract: No abstract text available
Text: N I C S M7E D ■374t 17b5 O O H O M I T -4 6 -2 3 -1 2 MB8431/32-90/- 90L /-90LL , /- 90L /-90LL MB8431/32-12/-12L/-12LL CAPACITANCE ( t > = 2 5 ° c ,» = im h z ) Parameter Sym , D IN OS I 7 ■F M I T-46-23-12 MB8431/32-90/- 90L /-90LL MB8431/32-12/-12U-12LL RECOMMENDED , ■374c ì7be O O n O S B 1 ■FUI T-46-23-12 MB8431/32-90/- 90L /-90LL MB8431/32-12/-12L , – 374^7^5 0G1T053 0 * F M I T-46-23-12 MB8431/32-90/- 90L /-90LL MB8431/32-12/-12L/-12LL AC


OCR Scan
PDF 374T7Li2 MB8431/32-90/-90U-90LU-12/-12U-12LL 16K-BIT M88431 MB8432 MB8431 MB8432provide T-46-23-12 MB8431/32-90/-90L/-90LL MB8431/32-12/-12L/-12LL B84311
2001 - MB82D01171A

Abstract: 004C2000
Text: / 90L /90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface , 85 ns 90 90L 90LL 90 ns 20 mA Standby Current (IDDS1 Max) 200 µA 100 µA 70 µA , /85LL/90/ 90L /90LL s FEATURES · · · · · · Asynchronous SRAM Interface 1 M word × 16 bit , /85/85L/85LL/90/ 90L /90LL s PIN ASSIGNMENTS (TOP VIEW) Flash Compatible FBGA (suffix PBT) SRAM , /85LL/90/ 90L /90LL s BLOCK DIAGRAM VDD VSS A0 to A19 DQ1 to DQ8 Address Latch & Buffer


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PDF DS05-11404-2E 1171A-80/80L/80LL/85/85L/85LL/90/90L/90LL 576-WORD MB82D01171A 16-bit MB82D01171A 004C2000
2001 - BGA-48P-M18

Abstract: DS05-11404-2E
Text: / 90L /90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface , 85 ns 90 90L 90LL 90 ns 20 mA Standby Current (IDDS1 Max) 200 µA 100 µA 70 µA , /85LL/90/ 90L /90LL s FEATURES · · · · · · Asynchronous SRAM Interface 1 M word × 16 bit , /85/85L/85LL/90/ 90L /90LL s PIN ASSIGNMENTS (TOP VIEW) Flash Compatible FBGA (suffix PBT) SRAM , /85LL/90/ 90L /90LL s BLOCK DIAGRAM VDD VSS A0 to A19 DQ1 to DQ8 Address Latch & Buffer


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PDF DS05-11404-2E 1171A-80/80L/80LL/85/85L/85LL/90/90L/90LL 576-WORD MB82D01171A 16-bit MB82D01171A F0112 BGA-48P-M18 DS05-11404-2E
SRT-2W6H

Abstract: 134B V07E U17E U17D U17C SRK-12ZB 113C v08g c s 134b
Text: ) »ÍS7C 9k 0. 45 ÎÉfë 30 9 0. 45 10 9k 9. 5k * »13.5k, S? W 134A »17B Sì 3 100 2.5 90L 100 , 20 200 25L M. M 114C U17D Hi 3 300 2. 5 90L 100 175 j 1. 1 2. 5 25L 20 300 25L nm* sr.» 114C U17E HS 3 400 2. 5 90L 100 175 j 1. 1 2. 5 25L 10 400 25L eiîs ». * 114 C V07E HS 500 400 1.3 9 OL 40 175] 1. 1 1. 3 25L 10 400 25L 113C V07G HS 800 600 1. 3 90L 40 175 j 1. 1 1. 3 25L 10 600 25L 113C VQ7J HS 1000 800 1.3 90L 40 175 j 1. 1 1. 3 25L 10 800 25L 113 C V08E


OCR Scan
PDF SRK-12ZBCT05) SRK-12ZBÃ 33MIN 33MIN 17MIN 17MIN 20MIN 15MIN 20MIN SRT-2W6H 134B V07E U17E U17D U17C SRK-12ZB 113C v08g c s 134b
MB8421-90L

Abstract: MB8421 MB8421-90 mb8421-12 mbl8086 d480 FC-50P A8LC
Text: Copyright © 1990 by FUJITSU LIMITED ml Fujitsu Microelectronic». Inc. 4-53 MB8421 /22-90/- 90L /-90LL , MB8421 /22-90/- 90L /-90LL MB8421 /22-12/-12L/-12LL Fig. 1 - BLOCK DIAGRAM OF MB8421/22 NOTES: MB8421 , = 0V| CIN 10 pF I/O Capacitance (Vl/O = OV) Cl/O 10 PF 4-55 MB8421 /22-90/- 90L /-90LL MB8421 , simplified block diagram of the dual-port SRAM is shown in Fig. 1. 4-56 MB8421 /22-90/- 90L /-90LL MB8421 , /- 90L /-90LL MB8421 /22-12/-12L/-12LL When both ^Sl and cSr ar© low at the same time |CS controlled


OCR Scan
PDF MB8421/8422-90/-90U-90LL/-12/-12U-12LL 16K-BIT MB8421 MB8422 FG4013S-2C /22-90/-90L/-90LL MB8421-90L MB8421-90 mb8421-12 mbl8086 d480 FC-50P A8LC
2001 - Not Available

Abstract: No abstract text available
Text: /- 90L /-90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM , .) Standby Current (IDDS1 Max.) 85L 85LL 85 ns 90 90L 90LL 90 ns 20 mA 200 µA 100 , µA 100 µA 70 µA MB82D01171A-80/-80L/-80LL/-85/-85L/-85LL/-90/- 90L /-90LL (AE2.0E) s PIN , Power Supply No Connection MB82D01171A-80/-80L/-80LL/-85/-85L/-85LL/-90/- 90L /-90LL (AE2.0E) s , /-85L/-85LL/-90/- 90L /-90LL (AE2.0E) s FUNCTION TRUTH TABLE *1 CE1 CE2 WE OE LB UB


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PDF /-80L/-80LL/-85/-85L/-85LL/-90/-90L/-90LL 576-WORD MB82D01171A 16-bit -30oC
SRT-2W6H

Abstract: SRK-12ZB SRT-2W6 V07E U17D U17C 134B 113C v08g c U17E
Text: ) »ÍS7C 9k 0. 45 ÎÉfë 30 9 0. 45 10 9k 9. 5k * »13.5k, S? W 134A »17B Sì 3 100 2.5 90L 100 , 20 200 25L M. M 114C U17D Hi 3 300 2. 5 90L 100 175 j 1. 1 2. 5 25L 20 300 25L nm* sr.» 114C U17E HS 3 400 2. 5 90L 100 175 j 1. 1 2. 5 25L 10 400 25L eiîs ». * 114 C V07E HS 500 400 1.3 9 OL 40 175] 1. 1 1. 3 25L 10 400 25L 113C V07G HS 800 600 1. 3 90L 40 175 j 1. 1 1. 3 25L 10 600 25L 113C VQ7J HS 1000 800 1.3 90L 40 175 j 1. 1 1. 3 25L 10 800 25L 113 C V08E


OCR Scan
PDF SRK-12ZBCT05) SRK-12ZBÃ SRK400 SRT-2W6H SRK-12ZB SRT-2W6 V07E U17D U17C 134B 113C v08g c U17E
B05G

Abstract: U1GZ41 U1GU44 U1GC44 U1DZ41 U1DL49 U1DL44A U1CL49 U1BC44 U15C
Text: 10 400 lSRll-400tìS 89C UOSE Bî 200 100 2. 5 90L 100 175 j 1. 4 2. 5 60 100 114C uose HS 300 200 2. 5 90L 100 175 j 1. 4 2. 5 60 200 114 C U05E Bit 500 400 2. 5 90L 100 ll5j 1. 4 2. 5 10 400 114C B05G HS 800 600 2. 5 90L 100 175 j 1. 4 2. 5 10 600 114C U05GH44 «2 400 0. 5 20 1. 2 0. 5 10 400 trr 90L 100


OCR Scan
PDF U1BC44 MBZ41 U1CL49 --18--j E1233 B05G U1GZ41 U1GU44 U1GC44 U1DZ41 U1DL49 U1DL44A U1CL49 U15C
MB6432

Abstract: No abstract text available
Text: FUJITSU LIMITED and Fujitsu Microelectronics, Inc. M B8431 /32-90/- 90L /-90LL MB8431 /32-12/-12L/-12LL , Capacitance (VI/O=0V) Symbol C|N Cko Typ Max 10 10 Unit PF PF MB8431 /32-90/- 90L /-90LL MB8431/32-12/-12L , The INT pins require pull-up resistors because they are open-drain outputs. MB8431/32-90/- 90L , capacitance 4-71 MB8431 /32-90/- 90L /-90LL MB8431/32-12/-12L/-12LL AC CHARACTERISTICS (Recommended , /32-90/- 90L /-90LL MB8431 /32-12/-12L/-12LL WRITE CYCLE Parameter Symbol MB8431-90/ 90L /90LL MBS431


OCR Scan
PDF MB8431/32-90/-90U-90LU-12/-1ZU-12LL 16K-BIT MB8431 MB8432 F64005S-6C MB6432
2001 - 85lp

Abstract: No abstract text available
Text: word x 16 bit) Mobile Phone Application Specific Memory MB82D01161-85/85L/90/ 90L CMOS 1,048,576 , ) 85L 90 85ns 90L 90ns Active Current ( IDDA1 Max ) 20mA Standby Current ( IDDS1 Max , 48-ball plastic FBGA (BGA-48P-M16) (BGA-48P-M18) 100µA MB82D01161-85/85L/90/ 90L s , /90/ 90L s PIN ASSIGNMENTS (TOP VIEW) Flash Compatible FBGA (suffix PBT) SRAM Compatible FBGA , /Output VDD Power Supply VSS Ground NC No Connection 3 MB82D01161-85/85L/90/ 90L s


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PDF DS05-11405-1E 16Mbit MB82D01161-85/85L/90/90L 576-WORD MB82D01161 16-bit MB82D01161 85lp
SRT-2W6H

Abstract: SRK-12ZB U17E V07E U17D U17C 134B 113C v08g c SRT-2W6
Text: ) »ÍS7C 9k 0. 45 ÎÉfë 30 9 0. 45 10 9k 9. 5k * »13.5k, S? W 134A »17B Sì 3 100 2.5 90L 100 , 20 200 25L M. M 114C U17D Hi 3 300 2. 5 90L 100 175 j 1. 1 2. 5 25L 20 300 25L nm* sr.» 114C U17E HS 3 400 2. 5 90L 100 175 j 1. 1 2. 5 25L 10 400 25L eiîs ». * 114 C V07E HS 500 400 1.3 9 OL 40 175] 1. 1 1. 3 25L 10 400 25L 113C V07G HS 800 600 1. 3 90L 40 175 j 1. 1 1. 3 25L 10 600 25L 113C VQ7J HS 1000 800 1.3 90L 40 175 j 1. 1 1. 3 25L 10 800 25L 113 C V08E


OCR Scan
PDF SRK-12ZBCT05) SRK-12ZBÃ SRT-2W6H SRK-12ZB U17E V07E U17D U17C 134B 113C v08g c SRT-2W6
Not Available

Abstract: No abstract text available
Text: Mbit (1 M word × 16 bit) Mobile Phone Application Specific Memory MB82D01171A-90/- 90L /-90LL CMOS 1 , Current (Max.) (IDDP) 200 µA Max. MB82D01171A 90 90L 90 ns 20 mA 100 µA Max. 10 µA 70 µA Max. 90LL s , MB82D01171A-90/- 90L /-90LL s FEATURES · · · · Asynchronous SRAM Interface 1 M × 16 organization Fast Random Cycle Time: tRC = 90 ns Low Power Consumption VDD standby current: 90: 200 µA 90L : 100 µA 90LL: 70 µA , Preliminary(AE1.0E) · · · · 2 MB82D01171A-90/- 90L /-90LL s PIN ASSIGNMENT (Top View) 1 2 3 4 5


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PDF MB82D01171A-90/-90L/-90LL 576-WORD MB82D01171A 16-bit F0101
CM2P-90L

Abstract: CM2P-600L 800L CM2P-230L CM2P-800L 500A6 600L 470l CM2P-470L 230L
Text: type A Ceramic tube 80.2 Dimensions A 90L 145L 6.60.2 230L 350L 7.10.2 470L 600L 7.60.2 , -470L CM2P-350L CM2P-230L CM2P-145L 100 CM2P- 90L 107 106 105 104 103 102 101 10 0 10 1 10 2 10 3 , . CM2P- 90L CM2P-145L CM2P-230L CM2P-350L CM2P-470L CM2P-600L CM2P-800L DC Breakdown Impulse


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PDF CM2P-800L CM2P-600L CM2P-470L CM2P-350L CM2P-230L CM200L CM2P-90L CM2P-600L 800L CM2P-230L CM2P-800L 500A6 600L 470l CM2P-470L 230L
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