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Part Manufacturer Description Datasheet Download Buy Part
LT1115CN8 Linear Technology LT1115 - Ultra-Low Noise, Low Distortion, Audio Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1115CN8#PBF Linear Technology LT1115 - Ultra-Low Noise, Low Distortion, Audio Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1115CSW#TR Linear Technology LT1115 - Ultra-Low Noise, Low Distortion, Audio Op Amp; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1115CSW16 Linear Technology IC OP-AMP, 200 uV OFFSET-MAX, 70 MHz BAND WIDTH, PDSO16, 0.300 INCH, PLASTIC, SO-16, Operational Amplifier
LT1115CSW Linear Technology LT1115 - Ultra-Low Noise, Low Distortion, Audio Op Amp; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT1115CSW#TRPBF Linear Technology LT1115 - Ultra-Low Noise, Low Distortion, Audio Op Amp; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C

HA 1115 datasheet (1)

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Not Available

Abstract: No abstract text available
Text: the next cascaded stage to count. HA RR IS S E M I C O N D S E C T O R 5BE D ■HCS161MS 4 , LIMITS GROUP A SUB­ GROUPS TEMPERATURE MIN MAX 1 +25°C - 40 HA 750 , -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25°C - ±0.5 HA 2,3 +125°C , ±5 - ±5 HA ns TPHL 39 2 50 2 39 2 50 ns VCC = 4.5V +25°C , accordance with Method 5005 of MIL-STD-883 may be exercised. 7-363 Subgroups 1,2,3,9,10,11 HA RR IS


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PDF HCS161MS MIL-STD-1835, CDIP2-T16, x2190mm 05A/cm2
ECG circuit diagram

Abstract: 12 lead ecg circuit diagram 1115A HA 1115 pf 4fl circuit diagram of ECG ECG Semiconductors ISO ecg ecg circuit schematic Philips ECG
Text: CROSSOVER DISTORTION HIGH CURRENT CAPABILITY (2.5A) SUPPLY VOLTAGE RANGE (4V-20V) The ECG 1115 /1U5A are , 1115 r.77"(l9,5!S)—U-I.004'(25.S) MAX.—I MAXi I I ifFïPsnfflr ECG 1115A I J —,7?"(I9 , ^ joflouwo I cnouta (SUBSTRATE) I IW>UT I ripple I fiCJCCTtOM 359 ECG 1115 , ECG 1115A This , /« SVR Supply voilage rejection V, = 14.4 V Rt = 4fl '«,»!. = 100 Hz 38 dB ECG 1115 , ECG 1115A , 1115 , ECG 11I5A This Material Copyrighted By Its Respective Manufacturer PHILIPS E C G INC 17E


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PDF ECG1115, ECG1115A V-20V) 1115/1U5A 12-lead ECG1115/111SA ECGJ115A ECG circuit diagram 12 lead ecg circuit diagram 1115A HA 1115 pf 4fl circuit diagram of ECG ECG Semiconductors ISO ecg ecg circuit schematic Philips ECG
ba 4918

Abstract: temic 4714 4722 f/v converter ic fa 5518 ba 5938 16 bit comparator using 74*85 IC 8952 microcontroller Power AMPLIFIER 6012 ba 4914 BA 4916
Text: ( 11.15 MHz) • Programmable carrier-modulation frequency The receive part is designed for a , ( 11.15 MHz) 6 OSCVDD Oscillator supply input 7 DELVB Phase correction VC03 supply input 8 DELGND Phase , corresponding level required on MCKA. Crystal oscillator = 11.15 MHz. Table 1. Clock-output values Level on , 2.7875 3.716 5.575 11.15 TELEFUNKEN Semiconductors Rev. Al, 07-Apr-98 3(25) Preliminary Information , Loop and Mixer Loop Dividers 2 1) 11.15 MHz -f- D3 ^mod 1 -I-P^ Q 223 Phase comparator ÌRefl


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PDF u3550bm U3550BM 26/50-MHz D-74025 07-Apr-98 ba 4918 temic 4714 4722 f/v converter ic fa 5518 ba 5938 16 bit comparator using 74*85 IC 8952 microcontroller Power AMPLIFIER 6012 ba 4914 BA 4916
BPC3510

Abstract: BPC3510W BPC35
Text: VF Ir V is o Volts HA Volts PF °C /W °C Cj R 8J C T j .T s t g N O TES: 1. Bridge mounted , Instrument 446 GBPC FIG .8 1.135(28.81 1.115 (28.3) .672(17.U 632(16.1) .094 (2.4)0IA.- A C .582(14.83 .542(13.8) 1.135(28.8) .672(17.11 1.115 (28.3) .632(16.13 I _ L I' -fl METAL HEAT SINK- .732(18.6) .692(17.6) EPOXY CASE G B PC -W F IG .9 1.135(28.8) 1.115 (28.3) 1.732(18.6)1 |.692(17.6)| A C 1.135(28.8) 1.115 (28.3) t I .732(18.6) .692(17.6) t -f I 1 i A C .470


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PDF GBPC35005 GBPC3510 E54214 BPC3510 BPC3510W BPC35
lm385 IC circuit diagram

Abstract: MC10324 eia 343 LM385/MAX4135/MAX4136/MAX4137/LM385/MAX4135/MAX4136/MAX4137/2n7000 equivalent
Text: Vdc mA 1.115 V re f- -1 .7 0 -1 .7 0 0 VEE(D)+1.3 37.5 60 60 - - 0 .8 - Vdc Î2 , C H A R A C T E R IS T IC S (TA = 25°C, lref = 1.115 mA Load = 37.5 Q to AGnd, V q ç = VEE = " , 90 120 -1 .6 -0 .8 1 150 200 150 - Vdc Vdc \iA HA HA HA PF -150 - -6 0 80 5.0 1 , (TA = 25°C, lref = 1.115 mA, Load = 37.5 n to AGnd, Vc c = VEE = - 5-2 V, see Figure 1 , l n 'SYNC Ve h Vn W Vn B Vb L N VSYNC- HA mA mV 0 - 6 7 .8 -6 2 6 - 5 0 .6 -2 7 0 - 0 .6 7 -7


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PDF MC10324 MC10324 EIA-170 EIA-343-A HB205) lm385 IC circuit diagram eia 343 LM385/MAX4135/MAX4136/MAX4137/LM385/MAX4135/MAX4136/MAX4137/2n7000 equivalent
2003 - PM5310-BI

Abstract: PM5310 0x170
Text: Released Issue No. 2: February 2003 Do wn lo ad ed by k ha led sh eh ab , their respective owners. ha led The technology discussed in this document may be protected by , -2021842 Issue 2 2 TBSTM Device Errata Released Do wn lo ad ed by k ha led sh , 1 December 2002 Document Created Do wn lo ad ed by k ha led sh eh , . 12 ha 3.7 sil 3.1 Do wn lo ad ed by k Notes


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PDF PM5310 PMC-2021842 225oC PM5310-BI PM5310 0x170
Not Available

Abstract: No abstract text available
Text: FLAT PACK MIL-STD-1B35 DESIGNATOR CDFP4-F16, LEAD F1NSIH C TOP VIEW Description HA RR IS S E M , +25°C -0.5 0.5 jiA 2,3 +125°C, -55°C -5.0 5.0 HA 7, 8A, 8B +25°C , LOGIC PARAMETERS (NOTE 1) CONDITIONS HA RR IS S E M I C O N D S E CT OR SflE D ■43 02 , LOGIC CP to ON ' HA RR IS S E U I C O N D S E C T O R SSE D ■4302E71 Specifications , 1/2 VCC = 3V± 0.5V VCC = 6V ± 0.5V 1-10 - 16 8 - 4,6,8 11-15 50kHz


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PDF M30S271 MIL-STD-1835 CDIP2-T16, 200K-or HCTS160MS 00441bfl 10sA/cm2
T 582

Abstract: GBPC12 GBPC12005W GBPC15 GBPC25 GBPC35005 GBPC35005 Thru GBPC3510 1115
Text: CAPACITANCE PER BRIDGE ELEMENT REVERSE VOLTAGE Vr, VOLTS INS®» -466- FIG.8 1.135(26.8) 1.115 (28.3) .672(17.13 1.135(28.83 .672(17.1) 1.115 (28.3) .632(16.13 I _L 632(16.1) AC ? II- -J .732(18.6) .692(17.6) ac t .582(14.8) .542(13.8) GBPC EPOXY CASE METAL HEAT SINK- FIG.9 , 1.135(285) 1.115 (28.3) _J.732C18.63I 1.692(17.6) I«; t -4 4 4 4 JJ 1 + 1.135(28.8) .732(18.6) 1.115 (28.3) .692(17.6) ! 1 4 AC .042 , Ta-1 25°C Ir 5.0 500.0 HA RMS Isolation Voltage from case to leads Viso 2500.0 Volts


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PDF GBPC12 E54212 T 582 GBPC12005W GBPC15 GBPC25 GBPC35005 GBPC35005 Thru GBPC3510 1115
Not Available

Abstract: No abstract text available
Text: Input high current - 10 HA IlL Input low current -1 0 - HA VCC = 5.25; VIN = 0 !|h p Input high current (pull-up) -1 0 10 HA > MIN > Parameter < o o Symbol Normal operation !|lp Input low current (pull-up) -4 5 12 HA Vcc = 5.25; V|N = 0 !oz Input leakage -10 10 HA 0 < V |N < Vcc C IN Input capacitance , ). 11-22 11-15 Display Memory Bus: BitBLT Read/Write C ycle


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PDF CL-GD5446
Not Available

Abstract: No abstract text available
Text: depending on CTO standard • Integrated oscillator circuit with external crystal ( 11.15 MHz) â , Mixer-supply input 12 16 Oscillator input ( 11.15 MHz) Mixer output Tank elements for LO are , the corresponding level required on MCKA. Crystal oscillator = 11.15 MHz. Table 1. Clock-output , 5.575 11.15 Rev. A2, 10-Feb-99 3(25) Tem ic U3550BM S e m i c o n d u c t o r s , €œ VC0 3 -2- D1 ir Loop filter VC0 2 11.15 M H z K -2- D 2 o o 2) ° o


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PDF U3550BM U3550BM 26/50-MHz U3550BMâ D-74025 10-Feb-99
temic 4714

Abstract: No abstract text available
Text: Integrated oscillator circuit with external crystal ( 11.15 MHz) Programmable carrier-modulation frequency , Oscillator input ( 11.15 MHz) Oscillator supply input Phase correction VC03 supply input DELGND Phase , divider values and the corresponding level required on MCKA. Crystal oscillator = 11.15 MHz. Speed-up , % V c c 1.91 to 2.41 3 3.716 73% to 87% V c c 2.63 to 3.13 2 5.575 93% to V c c 3.35 to 3.6 1 11.15 , ° o K 11.15 M H z o|o VC O 2 Loop filter 1 1 Modulator loop 2) M ixer loop 3


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PDF U3550BM U3550BM 26/50-MHz D-74025 10-Sep-98 temic 4714
74736-0211

Abstract: 747360220 insulating Gasket msa 1115
Text: gap for emi gasket 111.5 di - 01.05 i0.05 x14 »|0O.1O©|A|K©|L©| MS A FOR PCI APPLICATIONS , 111.5 di - 01.05 i0.05 x14 »|0O.1O©|A|K©|L©| MS A FOR PCI APPLICATIONS RECOMMENDED DIMENSION IS , host connector layout [ÜZÖ] 111.5 di - 01.05 i0.05 x14 »|0O.1O©|A|K©|L©| r- 0.3 ±0.2 bezel


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PDF 2009/95/EC> /05/H BRU55ELL SD-74736-220 74736-0211 747360220 insulating Gasket msa 1115
ba 4918

Abstract: free ba 4918 irf 7838 irf 4710 IC 7224 SUPRA SDT-99 BA 6688 L irf 570 irf 560 27550
Text: Integrated oscillator circuit with external crystal ( 11.15 MHz) Programmable carrier-modulation frequency , input ( 11.15 MHz) OSCVDD Oscillator supply input Phase correction VCO 3 supply input DELGND Phase , divider values and the corresponding level required on MCKA. Crystal oscillator = 11.15 MHz. Speed-up , 67%- V (r 1.91 to 2.41 3 3.716 73% to 87% Vc c 2.63 to 3.13 2 5.575 93%- io V fr 3.35 to 3.6 1 11.15 , comparator fRef3 ° o K Tem ic S e m i c o n d u c t o r s 11.15 MHz o|o VCO 2 Loop filter


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PDF U3550BM U3550BM 26/50-MHz D-74025 10-Feb-99 ba 4918 free ba 4918 irf 7838 irf 4710 IC 7224 SUPRA SDT-99 BA 6688 L irf 570 irf 560 27550
Not Available

Abstract: No abstract text available
Text: Forward Voltage 1.70 V If = 40 mA Ir Reverse Current 100 HA V r = 2.0 V Output , Emitter-Collector Breakdown Voltage 5.0 V Iec = 100 |iA nA VCe= 10.0 V, If = 0, Ee = 0 HA H-A HA V ce = 5.0 V,If = 40 mA, d = 0.15 inch (3.81 mm)(3)<7) HA HA HA V ce = 5.0 V, If = 40 mA(6 , Carrollton, Texas 75006 (972)323-2200 Cov (972)323-2396 11-15 100


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PDF OPB703 Y/////2//7ZZ777ZH-
HAI 4741-2

Abstract: 4741-5 HA1-4741-2 HAI-4741-5 HA1-4741-5 hai 4741 HAI-4741 HA-4741-2 HA1-4741-8 HA3-4741-5
Text: 4741 Quad Operational Amplifier DESCRIPTION The HA -4741 is a monolithic integrated circuit , (Note 3) . . . Indefinite Storage Temperature Range.-65to+150°C Operating Temperature Range HA -4741-2 .-55 to +125°C HA -4741-5 . Oto +70°C Lead Soldering Temperature (60 sec) . 300 C ELECTRICAL CHARACTERISTICS Vcc ± 15V Ta +25°C unless otherwise specified PARAMETER CONDITIONS HA -4741-2 HA -4741-5 UNITS MIN TYP MAX MIN TYP MAX Input Offset Voltage Rs<10 KQ, 0.5 3.0 1.0 5.0 mV


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PDF HA-4741 HA1-4741-2 HA1-4741-8* HA1-4741-5 HA3-4741-5 L-STD-883 HAI 4741-2 4741-5 HAI-4741-5 hai 4741 HAI-4741 HA-4741-2 HA1-4741-8
2014 - Not Available

Abstract: No abstract text available
Text: ±20% 139.4( 111.5 ) 1.50 CDRH127C/ANP-121MC 121 120μ ±20% 174.9(139.9) 1.35 CDRH127C/ANP , „ƒ) Rated current (at 125℃) (A) ※2 CDRH127C/ANP-100MC 100 10μ ±20% 16.8(13.4) 4.6 CDRH127C/ANP-120MC 120 12μ ±20% 18.7(14.9) 4.3 CDRH127C/ANP-150MC 150 15μ ±20% 20.5(16.4) 4.1 CDRH127C/ANP-180MC 180 18μ ±20% 25.4(20.3) 3.5 CDRH127C/ANP-220MC 220 22μ ±20% 30.0(23.8) 3.3 CDRH127C/ANP-270MC 270 27μ ±20% 32.0(25.6) 3.2


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PDF CDRH127C/A 500pcs 2014-June-19
Not Available

Abstract: No abstract text available
Text: Breakdown Voltage 5.0 V Ie c = 100 |xA nA V c e = 10.0 V, If = 0, Ee = 0 HA V c e = 5.0 V ,I f = 40 mA, HA d = 0.15 inch (3.81 mm)(3)(7) Collector Dark Current ICEO 100 , Crosstalk 200 200 100 HA OPB703 OPB704 QPB705 20 20 10 HA Vce = 5.0 V, I f = 40 mA(6) iiA HA Typical Performance Curves Reflective Surface Collector Current vs. Diode Forward Current , 75006 (972)323-2200 Fax (972)323-2396 11-15 100


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PDF OPB703 QPB705
2013 - MIL-DTL-83513/03 & /04 Micro-D

Abstract: M83513/03
Text: Connector (Receptacle) A, B, C, D, E, F, G, €ƒ (See Table I) Codes A - H specify the shell size. The , .715 .865 .865 .965 .965 1.115 1.115 1.265 1.265 1.215 1.215 1.800 1.800 14.35 14.35


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PDF MIL-DTL-83513 MIL-DTL-83513/03 M22759/33 m83513 MIL-DTL-83513/03 & /04 Micro-D M83513/03
Not Available

Abstract: No abstract text available
Text: HA RR IS S E M I C O N D S E CT OR 5ÖE D ■430 2 27 1 00 44 13 5 3^5 H H A S , |aA at VOL, VOH HA RR IS S E M I C O N D S E CT OR SÖE D ■430 5 27 1 O O M M l ö b , , VIL = 0.8V (Note 2) 1 +25°C -0.5 0.5 HA 2,3 +125°C,-55°C -5.0 5.0 HA , 50kHz 25kHz - 16 - - - 1 -7,9,10,16 - - 11-15 1,3, 5, 7, 9,10,16 2 , CONNECTIONS (Note 1) 11-15 8 DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) 4,6,8 NOTES: 1. Each pin


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PDF HCTS163MS MIL-STD-1835 CDIP2-T16, 05A/cm2 100nm
high resolution reflective lens phototransistor

Abstract: OPB703 OPB704 Optek Technology opb704 QPB704 high resolution reflective phototransistor OPB705 QPB705 reflective lens phototransistor
Text: Reverse Current 100 HA Vr = 2.0 V I I Output Phototransistor II V(br)CE0 Collector-Emitter , mm)(3)(7) lex Crosstalk OPB703 OPB704 OPB7Q5 20 20 10 ¡xA HA VLA Vce = 5.0 V, lf = 40 mA(6 , )323-2396 11-15


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PDF OPB703 OPB703, QPB704, QPB705 OPB704 OPB705 Y///////////77777* high resolution reflective lens phototransistor Optek Technology opb704 QPB704 high resolution reflective phototransistor QPB705 reflective lens phototransistor
2013 - Not Available

Abstract: No abstract text available
Text: 24.51 1.115 28.32 1.115 28.32 1.265 32.13 1.265 32.13 C Max in. mm 0.334 8.48 0.400 10.16 , 8.15 0.321 8.15 ±.010 in. mm 0.441 11.20 0.441 11.20 0.441 11.20 0.441 11.20 0.441 11.20


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PDF MIL-DTL-83513 M83513
QPB704

Abstract: OPB704 OPB703 high sensitivity reflective phototransistor reflective lens phototransistor 2u 85 diode phototransistor npn OPB705 high resolution reflective lens phototransistor Optek Technology opb704
Text: Diode Vf Forward Voltage 1.70 V If = 40 mA Ir Reverse Current 100 HA Vr = 2.0 V Output Phototransistor V(br)ceo Collector-Emitter Breakdown Voltage 30 V Ice = 100 hA V(br)eco Emitter-Collector , Combined ic(on) On-State Collector Current OPB703 OPB704 OPB705 200 200 100 HA ra |xA Vce = 5.0 V,If = 40 mA, d = 0.15 inch (3.81 mm)™ lex Crosstalk OPB703 OPB704 OPB7C5 20 20 10 HA ßA M Vce = 5.0 , Carrollton, Texas 75006 11-15 (972)323-2200 Fax (972)323-2396 This Material Copyrighted By Its Respective


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PDF OPB703 QPB704, QPB705 OPB704 OPB705 b7c56SfiO QPB704 high sensitivity reflective phototransistor reflective lens phototransistor 2u 85 diode phototransistor npn high resolution reflective lens phototransistor Optek Technology opb704
Not Available

Abstract: No abstract text available
Text: 1-800-998-8800 for free samples or literature. Maxim Integrated Products 1-115 DG441/DG442/883B 1.0 , with Voltage Low IlNL IN1 = 0.8V, all others = 2.4V All 1,2,3 -0.5 0.5 HA , , V- =-16.5V, Vin = 0V or 5V, all channels on or off All 1 ,2,3 100 HA Negaitve , -100 All 9 (iA HA DYNAMIC Turn-On Time Turn-Off Time 1-116 toFF Figure 1, Vs , Power-Supply Range Iqnd 12 1,3 0 V a 1 HA -1 -5 1,2, 3 V 100 2,3 12


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PDF MIL-STD-883 DG441 /883B DG442 16-Pin
Not Available

Abstract: No abstract text available
Text: □IX YS Fast Recovery Epitaxial Diode (FRED) DSEI 2x61 : VRM S V * n I *-» TvDe »/ ® V 200 1 W.— H' ° 1 - W — VF M ’ IR 200 Test Conditions ^R S FM ' favm ® *F U R TV —"lyjM J Tc = 85°C; rectangular, d = 0.5 tp < 10 jis; rep. rating, pulse width limited by T V M J *F M S TV = 45°C; J Maximum Ratings (per diode) 100 , < 1 mA 0L Mounting torque Terminal connection torque (M4) °C °C 1.1-1.5 /9-13 1.1-1.5 /9-13


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PDF 0DQ473Q
2013 - Not Available

Abstract: No abstract text available
Text: 0.965 24.51 0.965 24.51 1.115 28.32 1.115 28.32 1.265 32.13 1.265 32.13 C Max in. mm 0.334 , 8.15 0.321 8.15 ±.010 in. mm 0.441 11.20 0.441 11.20 0.441 11.20 0.441 11.20 0.441 11.20


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PDF M83513 MIL-DTL-83513
Supplyframe Tracking Pixel