The Datasheet Archive

Top Results (3)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TPS6508700RSKT TPS6508700RSKT ECAD Model Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85
TPS6508700RSKR TPS6508700RSKR ECAD Model Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85
AC1059 AC1059 ECAD Model Analog Devices SOCKET FOR MODEL AD210 IC

H11F1 SPICE MODEL Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - h11f1 application

Abstract: H11F1 40 FET Analog Devices
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 CATHODE 2 4 , #E94766) – Ordering option ‘300’ (e.g. H11F1 .300) APPLICATIONS As a variable resistor – â , OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Parameter , polarity) mW/°C ±30 V H11F3 ±15 V All BV4-6 4.0 H11F1 , H11F2  , °C I4-6 H11F1 , H11F2 30 H11F3 15 All 50 nA All 50 µA V4-6 = 15 V, IF =


Original
PDF H11F1 H11F2 H11F3 \TEMP\H11F2300 17-Aug-2007 H11F2 H11F2300 H11F2300W H11F23S h11f1 application 40 FET Analog Devices
2003 - H11f1 variable resistor 500k

Abstract: H11F1 variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F2 H11F 5v 10mA reed relay data sheet book h11f1 pin
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 CATHODE 2 4 , . H11F1 .300) APPLICATIONS As a variable resistor ­ · Isolated variable attenuator · Automatic gain , Page 1 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = , -6 4.0 H11F1 , H11F2 ±100 mA I4-6 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise , = 0, TA = 100°C I4-6 H11F1 , H11F2 30 H11F3 15 All 50 nA All 50 µA


Original
PDF H11F1 H11F2 H11F3 H11f1 variable resistor 500k variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F 5v 10mA reed relay data sheet book h11f1 pin
2003 - H11f1 variable resistor 500k

Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6 , VDE recognized (File #E94766) ­ Ordering option `300' (e.g. H11F1 .300) APPLICATIONS As a variable , OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Parameter , -6 All H11F1 , H11F2 H11F3 All 300 4.0 ±30 ±15 ±100 mW mW/°C V V mA IF VR IF(pk) PD All All All All 60 5 1 , 15 V, IF = 0, f = 1MHz BV4-6 I4-6 R4-6 C4-6 H11F1 , H11F2 H11F3 All All All All 300 15 30 15 50 50 V


Original
PDF H11F1 H11F2 H11F3 E90700, P01101067 H11F1300 H11F1300W H11F13S H11F13SD H11f1 variable resistor 500k H11F1 300 h11f1 application
H11F1

Abstract: H11F3 E91231 H11F H11F2 H11F1X R46Note
Text: H11F1X, H11F2X, H11F3X H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l , Dissipation 60mA 6V 100mW OUTPUT TRANSISTOR Breakdown Voltage H11F1 , H11F2 H11F3 Detector Current , ) 5 Breakdown Voltage - V( BR )46 (Note 2) H11F1 , H11F2 H11F3 Off-state Dark Current - I46 30 , = 16mA, f = 1kHz I46= 25µA RMS 300 On-state Resistance - r 46 (Note 2) H11F1 H11F2 H11F3 On-state Resistance - r 64 (Note 2) H11F1 H11F2 H11F3 Input to Output Isolation Voltage VISO Note 1


Original
PDF H11F1X, H11F2X, H11F3X H11F1, H11F2, H11F3 E91231 DB91018-AAS/A2 H11F1 H11F3 E91231 H11F H11F2 H11F1X R46Note
H11F2 equivalent

Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
Text: .:;i-"r""i Fu OPTOELECTRONICS PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE , °Cfor10sec Breakdown voltage ( H11F1 , H11F2) . .+30 V INPUT DIODE Breakdown voltage (H11F3). , =5 V Capacitance c, 50 PF V=0, f=1 MHz OUTPUT DETECTOR (Either polarity) Breakdown voltage ( H11F1 , CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS On-state resistance ( H11F1 ) r« 200 n If=16 mA , /jlA On-state resistance ( H11F1 ) r« 200 a, If=16 mA, l„=100 ^A (H11F2) r64 330 n If=16 mA


OCR Scan
PDF H11F1 H11F2 H11F3 ST1603A 100FINE ST2062 ST2063 H11F2 equivalent C4615 H11F bv46 8T20 H11F3 R200A HIIFI
H11F11

Abstract: H11FS vy 5 fet
Text: EU m m tm a m cs PHOTO FET OPTOCOüPtERS H11F1 H11F2H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon pbotodetector. The detector is , ( H11F1 , H11F2) . ±30 V Breakdown voltage (H11F3). ±15 V , 1.1 50 1.75 10 OUTPUT DETECTOR (Either polarity) Breakdown voltage ( H11F1 , H11F2) BV* BV.S , fftt': fillj CHARACTERiSTIC On-state resistance ( H11F1 ) (H11FS) (H11F3) { H11F1 ) (H11F2) {H11F3


OCR Scan
PDF H11F1 H11F2H11F3 ST2062 H11F11 ST2063 H11FS vy 5 fet
2002 - H11F1

Abstract: H11f1 variable resistor 500k H74A1 H11F H11F2 H11F3 bv46
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 CATHODE 2 4 , . H11F1 .300) APPLICATIONS As a variable resistor ­ · Isolated variable attenuator · Automatic gain , Page 1 of 9 6/24/02 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = , -6 4.0 H11F1 , H11F2 ±100 mA I4-6 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise , = 0, TA = 100°C I4-6 H11F1 , H11F2 30 H11F3 15 All 50 nA All 50 µA


Original
PDF H11F1 H11F2 H11F3 H11f1 variable resistor 500k H74A1 H11F H11F3 bv46
2003 - H11F3

Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6 , VDE recognized (File #E94766) ­ Ordering option `300' (e.g. H11F1 .300) APPLICATIONS As a variable , OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Parameter , -6 All H11F1 , H11F2 H11F3 All 300 4.0 ±30 ±15 ±100 mW mW/°C V V mA IF VR IF(pk) PD All All All All 60 5 1 , 15 V, IF = 0, f = 1MHz BV4-6 I4-6 R4-6 C4-6 H11F1 , H11F2 H11F3 All All All All 300 15 30 15 50 50 V


Original
PDF H11F1 H11F2 H11F3 P01101067 H11F3 H11F3300 H11F3300W H11F33S H11F33SD H11F3S H11f1 variable resistor 500k an 7511 500k variable resistor
ST206D

Abstract: H11F H11F1 15v reed relay low cost H11F2 H11F3
Text: OPTO ELECTHO H ICS PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 12 v 0.51 Ml» DIMENSIONS IN mm , ) . . 4mW/°C Lead solder temperature _ . 260°C for 10 sec Breakdown voltage ( H11F1 , H11F2 , CONDITIONS On-state resistance ( H11F1 ) '46 200 fi iF=16mA, U=100 pA (H11F2) i*4e 330 n lF=16 mA, 1^=100 jtiA (H11F3) '46 470 n lF= 16 mA, U=1Ó0 MA On-state resistance ( H11F1 ) 64 200 n lF=16mA, 1^=100 , the H11F1 IRED's controlling the filter's transfer characteristic. ST2G63 In many test equipment


OCR Scan
PDF H11F1 H11F2 H11F3 ST1603 100flto. 300Mn ST2062 ST2G63 ST206D H11F 15v reed relay low cost
Not Available

Abstract: No abstract text available
Text: PHOTOFET OPTOCOUPLERS O P T O E L E C T R O N IC S H11F1 H11F2 H11F3 The H11F series has , dissipation (at 25°C ambient) . Derate linearly (above 25°C ambient) . Breakdown voltage ( H11F1 , H11F2 , voltage ( H11F1 , H11F2) BV48 30 V (H11F3) bv4 6 15 V lc= 1 0 p h , lF= 0 nA , ( H11F1 ) O n-state resistance (H11F2) (H11F3) O n-state resistance ( H11F1 ) (H11F2) (H11F3 , rmS 2 H11F1 H11F2 H11F3 Input to o u tp u t capacitance ■7 4 b b fi S l 1 M inute


OCR Scan
PDF H11F1 H11F2 H11F3 ST1603 74bbfl51
2001 - Not Available

Abstract: No abstract text available
Text: Ratings Electrical Characteristics Similar Optocouplers Home Page H11F1 , H11F2, H11F3 PHOTON COUPLED , MAX UNIT 1.1 1.75 10 50 V µA pF V =6V R V=0, f=1MHz (BR)46 H11F1 , F2 I46=10µA; I =0 F , =0, I =0, f=1MHz F COUPLED ELECTRICAL CHARACTERISTICS (Ta=25°C) On-State Resistance - r46 H11F1 , On-State Resistance - r64 H11F1 H11F2 I F=16mA, I64=100µA H11F3 V =500V Isolation Resistance (Input to


Original
PDF H11F1, H11F2, H11F3 H11F1 H11F2 H11F3 50ohm,
2008 - Not Available

Abstract: No abstract text available
Text: Ratings Electrical Characteristics Similar Optocouplers Home Page H11F1 , H11F2, H11F3 PHOTON COUPLED , Reverse Current Capacitance PHOTO DETECTOR Breakdown Voltage-V(BR)46 H11F1 , F2 H11F3 Off-State Dark , ELECTRICAL CHARACTERISTICS (Ta=25°C) MIN TYP MAX UNIT H11F1 H11F2 IF=16mA, I46=100µA H11F3 On-State Resistance - r64 H11F1 H11F2 IF=16mA, I64=100µA H11F3 Isolation Resistance (Input to Output) Input to Output


Original
PDF H11F1, H11F2, H11F3 H11F1 H11F2 50ohm,
2000 - H11F1

Abstract: H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46
Text: H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No , 6V 100mW OUTPUT TRANSISTOR Breakdown Voltage H11F1 , H11F2 H11F3 Detector Current (continuous , Voltage (VR) Reverse Current (IR) 5 Breakdown Voltage - V( BR )46 (Note 2) H11F1 , H11F2 H11F3 , 5V, RL = 50 IF= 16mA, f = 1kHz I46= 25µA RMS 300 On-state Resistance - r46 (Note 2) H11F1 H11F2 H11F3 On-state Resistance - r64 (Note 2) H11F1 H11F2 H11F3 Input to Output Isolation Voltage


Original
PDF H11F1, H11F2, H11F3 E91231 DB91018-AAS/A3 H11F1 H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46
2000 - TRANSISTOR R46

Abstract: H11F1
Text: H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No , TRANSISTOR Breakdown Voltage H11F1 , H11F2 H11F3 Detector Current (continuous) Power Dissipation POWER , Voltage (VR) Reverse Current (IR) Breakdown Voltage - V( BR )46 (Note 2) H11F1 , H11F2 H11F3 Off-state Dark , Resistance - r46 Capacitance - C46 Coupled On-state Resistance - r46 (Note 2) H11F1 H11F2 H11F3 On-state Resistance - r64 (Note 2) H11F1 H11F2 H11F3 Input to Output Isolation Voltage VISO Input-output Isolation


Original
PDF H11F1, H11F2, H11F3 E91231 DB91018-AAS/A3 TRANSISTOR R46 H11F1
H11F1 HARRIS

Abstract: No abstract text available
Text: _ HA RR IS S E M I C O N D S E C T O R 37E D H11F1 , H11F2, I 4 3 Ü2 27 1 O G S T n O , IM EN SIO N . PHOTO DETECTOR Power Dissipation Breakdown Voltage H11F1 -H 1 1 F 2 H11F3 , Certificate # 35025 252 2759 A- 10 3875 08 1 G E SOLID STATE H11F1 , H11F2, H11F3 01E , €” - 200 330 470 ohms ohms ohms H11F1 H11F2 H11F3 - — — — 200 330 470 , SOLID STATE 01E 19731 D HIHAS Optoelectronic Specifications H11F1 , H11F2, H11F3 A S A


OCR Scan
PDF H11F1, H11F2, H11F3 92CS-42662 92CS-429S1 H11F1 HARRIS
11F2

Abstract: No abstract text available
Text: Optoisolator Specifications H11F1 , H11F2, H11F3 T h e H I IF fam ily con sists o f a g alliu , Specifications H11F1 , H11F2, H11F3 Individual Electrical Characteristics: (25°C Unless Otherwise Specified , (IF = 16m A , i46 = 2 5 ß A RMS, f = 1 KHz) H i IFL H 11F2 H 11F3 H11F1 HI 1F2 H 11F3 _ _ _ , R A C T E R IS T IC S 253 Optoisolator Specifications H11F1 , H11F2, H11F3 4 . R E S IS , R IT Y V S . D C . B IA S . Optolsolator Specifications H11F1 , H11F2, H11F3 TYPICAL


OCR Scan
PDF H11F1, H11F2, H11F3 11F2
Not Available

Abstract: No abstract text available
Text: Optoisolator Specifications H11F1 , H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode , H11F1 , H11F2, H11F3 Individual Electrical Characteristics: IN F R A R E D E M IT T IN G D IO D E TYP , A R A C T E R IS T IC S Optolsolator Specifications H11F1 , H11F2, H11F3 TA -A M 0 IE N T , -L IN E A R IT Y V S . D C . B IA S 254 . Optoisolator Specifications H11F1 , H11F2, H11F3 , switching glitches or d istortion. This schematic illustrates th e con cept, w ith current to the H11F1 IR E


OCR Scan
PDF H11F1, H11F2, H11F3 H11F1
h11cx

Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
Text: _5275DL H11F1 H11F13S H11F1SD H11F2300 H11F23SD H11F2W H11F3 H11F33S H11F3SD H11FX_5393 H11FX


Original
PDF 0034307-A MOC8102 MOC81023S MOC8102S MOC8103 MOC81033S MOC8103SD MOC8104300 MOC81043SD MOC8104W h11cx H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
2007 - Not Available

Abstract: No abstract text available
Text: Marking Information 1 H11F1 X YY Q V 3 2 6 4 5 Definitions 1 Device number


Original
PDF H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M
2007 - H11f1 variable resistor 500k

Abstract: h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM H11F3M
Text: Marking Information 1 H11F1 X YY Q V 3 2 6 4 5 Definitions 1 Device number


Original
PDF H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM
2007 - H11F1M

Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M
Text: Information 1 H11F1 V 3 4 2 6 X YY Q 5 Definitions 1 2 3 4 5 6 Fairchild logo Device number


Original
PDF H11F1M, H11F2M, H11F3M E90700) H11FXM H11F1M H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers
4N2b

Abstract: h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY17 CNY47 H11A2 H11A3
Text: 100 80 55 55 55 100 100 100 500 500 1.0 1.0 1.0 1.0 1.0 BILATERAL ANOLOG FET OUTPUT TYPE H11F1


OCR Scan
PDF CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 4N2b h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY47 H11A2 H11A3
Diode 10Z

Abstract: 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 CNY17
Text: 100 80 55 55 55 100 100 100 500 500 1.0 1.0 1.0 1.0 1.0 BILATERAL ANOLOG FET OUTPUT TYPE H11F1


OCR Scan
PDF CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 Diode 10Z 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3
2007 - H11f1 variable resistor 500k

Abstract: bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F3M H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
Text: -5-2 approval, Surface Mount, Tape and Reel Marking Information 1 H11F1 X YY Q V 3 2 6 4


Original
PDF H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
2002 - triac 4N35

Abstract: moc3041 H11F1 hma121 h11ag3 H11D3-20 MOC3021 application moc3041 application note MOC3051 mct4
Text: (µs) ON Max OFF Min Min Max Max VISOACRMS (kV) 1 minute H11F1 200 300M


Original
PDF H11A817 H11A817A H11A817B H11A817C H11A817D HMA121 HMA124 HMA2701 HMHA2801 HMHA281 triac 4N35 moc3041 H11F1 hma121 h11ag3 H11D3-20 MOC3021 application moc3041 application note MOC3051 mct4
Supplyframe Tracking Pixel