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onsemi
H11F1300 OPTOISOLTR 5.3KV PHOTO FET 6-DIP
H11F1300 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key H11F1300 Tube 0 1,000 - - - $1.13438 $1.13438 More Info
onsemi
H11F1300W OPTOISOLTR 5.3KV PHOTO FET 6-DIP
H11F1300W ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key H11F1300W Tube 0 1,000 - - - $1.13438 $1.13438 More Info

H11F1 300 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
H11F1300 H11F1300 ECAD Model Fairchild Semiconductor Optocoupler, 6-Pin DIP Bilateral Analog FET Output Optocoupler Original PDF
H11F1300W H11F1300W ECAD Model Fairchild Semiconductor Optocoupler, 6-Pin DIP Bilateral Analog FET Output Optocoupler Original PDF

H11F1 300 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - h11f1 application

Abstract: H11F1 40 FET Analog Devices
Text: #E94766) – Ordering option ‘300’ (e.g. H11F1.300 ) APPLICATIONS As a variable resistor – â , Corporation Page 2 of 10 V MΩ 300 15 pF 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 , ' (e.g. H11F1.300 ) back to top Applications As a variable resistor: Isolated variable attenuator , PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 CATHODE 2 4 , mounted in dual in-line packages. FEATURES As a remote variable resistor • ≤ 100Ω to ≥ 300


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PDF H11F1 H11F2 H11F3 \TEMP\H11F2300 17-Aug-2007 H11F2 H11F2300 H11F2300W H11F23S h11f1 application 40 FET Analog Devices
2003 - H11f1 variable resistor 500k

Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Text: VDE recognized (File #E94766) ­ Ordering option ` 300 ' (e.g. H11F1.300 ) APPLICATIONS As a variable , -6 All H11F1 , H11F2 H11F3 All 300 4.0 ±30 ±15 ±100 mW mW/°C V V mA IF VR IF(pk) PD All All All All 60 5 1 , 15 V, IF = 0, f = 1MHz BV4-6 I4-6 R4-6 C4-6 H11F1 , H11F2 H11F3 All All All All 300 15 30 15 50 50 V , ) VDE recognized (File #E94766) { Ordering option ' 300 ' (e.g. H11F1.300 ) back to top Applications As , PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6


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PDF H11F1 H11F2 H11F3 E90700, P01101067 H11F1300 H11F1300W H11F13S H11F13SD H11f1 variable resistor 500k H11F1 300 h11f1 application
2003 - H11F3

Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Text: VDE recognized (File #E94766) ­ Ordering option ` 300 ' (e.g. H11F1.300 ) APPLICATIONS As a variable , -6 All H11F1 , H11F2 H11F3 All 300 4.0 ±30 ±15 ±100 mW mW/°C V V mA IF VR IF(pk) PD All All All All 60 5 1 , 15 V, IF = 0, f = 1MHz BV4-6 I4-6 R4-6 C4-6 H11F1 , H11F2 H11F3 All All All All 300 15 30 15 50 50 V , recognized (File #E90700) VDE recognized (File #E94766) { Ordering option ' 300 ' (e.g. H11F1.300 ) back to , PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 6 OUTPUT TERM. 6


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PDF H11F1 H11F2 H11F3 P01101067 H11F3 H11F3300 H11F3300W H11F33S H11F33SD H11F3S H11f1 variable resistor 500k an 7511 500k variable resistor
2003 - H11f1 variable resistor 500k

Abstract: H11F1 variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F2 H11F 5v 10mA reed relay data sheet book h11f1 pin
Text: µS · UL recognized (File #E90700) · VDE recognized (File #E94766) ­ Ordering option ` 300 ' (e.g. H11F1.300 ) APPLICATIONS As a variable resistor ­ · Isolated variable attenuator · Automatic gain , PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 CATHODE 2 4 , mounted in dual in-line packages. FEATURES As a remote variable resistor · 100 to 300 M · 99.9 , Page 1 of 10 3/19/03 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA =


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PDF H11F1 H11F2 H11F3 H11f1 variable resistor 500k variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F 5v 10mA reed relay data sheet book h11f1 pin
2002 - H11F1

Abstract: H11f1 variable resistor 500k H74A1 H11F H11F2 H11F3 bv46
Text: µS · UL recognized (File #E90700) · VDE recognized (File #E94766) ­ Ordering option ` 300 ' (e.g. H11F1.300 ) APPLICATIONS As a variable resistor ­ · Isolated variable attenuator · Automatic gain , PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE SCHEMATIC ANODE 1 CATHODE 2 4 , mounted in dual in-line packages. FEATURES As a remote variable resistor · 100 to 300 M · 99.9 , Page 1 of 9 6/24/02 PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 Absolute Maximum Ratings (TA =


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PDF H11F1 H11F2 H11F3 H11f1 variable resistor 500k H74A1 H11F H11F3 bv46
H11F2 equivalent

Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
Text: .:;i-"r""i Fu OPTOELECTRONICS PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE , Circuit As a remote variable resistor— ■<100 ft to > 300 Mil ■>99.9% linearity ■<15 pF shunt , °C Power dissipation (at 25°C ambient) . . 300 mW Operating temperature . . — 55°C to , °Cfor10sec Breakdown voltage ( H11F1 , H11F2) . .+30 V INPUT DIODE Breakdown voltage (H11F3). , =5 V Capacitance c, 50 PF V=0, f=1 MHz OUTPUT DETECTOR (Either polarity) Breakdown voltage ( H11F1


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PDF H11F1 H11F2 H11F3 ST1603A 100FINE ST2062 ST2063 H11F2 equivalent C4615 H11F bv46 8T20 H11F3 R200A HIIFI
H11F1

Abstract: H11F3 E91231 H11F H11F2 H11F1X R46Note
Text: = 16mA, f = 1kHz I46= 25µA RMS 300 On-state Resistance - r 46 (Note 2) H11F1 H11F2 H11F3 On-state Resistance - r 64 (Note 2) H11F1 H11F2 H11F3 Input to Output Isolation Voltage VISO Note 1 , H11F1X, H11F2X, H11F3X H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l , Dissipation 60mA 6V 100mW OUTPUT TRANSISTOR Breakdown Voltage H11F1 , H11F2 H11F3 Detector Current , ) 5 Breakdown Voltage - V( BR )46 (Note 2) H11F1 , H11F2 H11F3 Off-state Dark Current - I46 30


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PDF H11F1X, H11F2X, H11F3X H11F1, H11F2, H11F3 E91231 DB91018-AAS/A2 H11F1 H11F3 E91231 H11F H11F2 H11F1X R46Note
H11F11

Abstract: H11FS vy 5 fet
Text: EU m m tm a m cs PHOTO FET OPTOCOüPtERS H11F1 H11F2H11F3 The H11F series has a , packages. 7.62 _J MAX · As a remote variable resistor- <100 fi to £ 300 MÜ h >99.9% linearity , (at 25°C ambient) . 300 mW Derate linearly (above 25-C ambient) 4 mWfC Breakdown voltage ( H11F1 , H11F2) . ±30 V Breakdown voltage (H11F3). ±15 V , 1.1 50 1.75 10 OUTPUT DETECTOR (Either polarity) Breakdown voltage ( H11F1 , H11F2) BV* BV.S


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PDF H11F1 H11F2H11F3 ST2062 H11F11 ST2063 H11FS vy 5 fet
Not Available

Abstract: No abstract text available
Text: PHOTOFET OPTOCOUPLERS O P T O E L E C T R O N IC S H11F1 H11F2 H11F3 The H11F series has , mounted in dual in-line packages. FEATURES As a remote variable resistor— ■< 1 0 0 iîto > 300 M , dissipation (at 25°C ambient) . Derate linearly (above 25°C ambient) . Breakdown voltage ( H11F1 , H11F2 , 74fcjbfiSl DDGb234 314 ■. . . . 300 mW . . . . 4 mW/°C . +30 V . +15V . . . , voltage ( H11F1 , H11F2) BV48 30 V (H11F3) bv4 6 15 V lc= 1 0 p h , lF= 0 nA


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PDF H11F1 H11F2 H11F3 ST1603 74bbfl51
2001 - Not Available

Abstract: No abstract text available
Text: Ratings Electrical Characteristics Similar Optocouplers Home Page H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET Circuit Features As a Remote Variable Resistor Resistance <=100 ohm to >= 300 Mohm , MAX UNIT 1.1 1.75 10 50 V µA pF V =6V R V=0, f=1MHz (BR)46 H11F1 , F2 I46=10µA; I =0 F , F F F A A 30 15 50 50 300 15 V V nA µA Mohms pF V46=15V, I =0, T =100°C V46=15V, I =0 V46=0, I =0, f=1MHz F COUPLED ELECTRICAL CHARACTERISTICS (Ta=25°C) On-State Resistance - r46 H11F1


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PDF H11F1, H11F2, H11F3 H11F1 H11F2 H11F3 50ohm,
2008 - Not Available

Abstract: No abstract text available
Text: Ratings Electrical Characteristics Similar Optocouplers Home Page H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET Circuit Features As a Remote Variable Resistor Resistance <=100 ohm to >= 300 Mohm , Reverse Current Capacitance PHOTO DETECTOR Breakdown Voltage-V(BR)46 H11F1 , F2 H11F3 Off-State Dark , =15V, IF=0, TA=25°C V46=15V, IF=0, TA=100°C V46=15V, IF=0 V46=0, IF=0, f=1MHz 300 15 30 15 50 50 V V nA µA , ELECTRICAL CHARACTERISTICS (Ta=25°C) MIN TYP MAX UNIT H11F1 H11F2 IF=16mA, I46=100µA H11F3 On-State


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PDF H11F1, H11F2, H11F3 H11F1 H11F2 50ohm,
ST206D

Abstract: H11F H11F1 15v reed relay low cost H11F2 H11F3
Text: OPTO ELECTHO H ICS PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 12 v 0.51 Ml» DIMENSIONS IN mm , ) . . 4mW/°C Lead solder temperature _ . 260°C for 10 sec Breakdown voltage ( H11F1 , H11F2 , =15V,IF=0,TS=100°C Off-state resisfance - T« 300 Mil V„=15V,lf=0 Capacitance ■C« 15 PF V , CONDITIONS On-state resistance ( H11F1 ) '46 200 fi iF=16mA, U=100 pA (H11F2) i*4e 330 n lF=16 mA, 1^=100 jtiA (H11F3) '46 470 n lF= 16 mA, U=1Ó0 MA On-state resistance ( H11F1 ) 64 200 n lF=16mA, 1^=100


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PDF H11F1 H11F2 H11F3 ST1603 100flto. 300Mn ST2062 ST2G63 ST206D H11F 15v reed relay low cost
2000 - H11F1

Abstract: H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46
Text: 5V, RL = 50 IF= 16mA, f = 1kHz I46= 25µA RMS 300 On-state Resistance - r46 (Note 2) H11F1 H11F2 H11F3 On-state Resistance - r64 (Note 2) H11F1 H11F2 H11F3 Input to Output Isolation Voltage , H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No , 6V 100mW OUTPUT TRANSISTOR Breakdown Voltage H11F1 , H11F2 H11F3 Detector Current (continuous , Voltage (VR) Reverse Current (IR) 5 Breakdown Voltage - V( BR )46 (Note 2) H11F1 , H11F2 H11F3


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PDF H11F1, H11F2, H11F3 E91231 DB91018-AAS/A3 H11F1 H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46
2000 - TRANSISTOR R46

Abstract: H11F1
Text: H11F1 , H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No , TRANSISTOR Breakdown Voltage H11F1 , H11F2 H11F3 Detector Current (continuous) Power Dissipation POWER , Voltage (VR) Reverse Current (IR) Breakdown Voltage - V( BR )46 (Note 2) H11F1 , H11F2 H11F3 Off-state Dark , Resistance - r46 Capacitance - C46 Coupled On-state Resistance - r46 (Note 2) H11F1 H11F2 H11F3 On-state Resistance - r64 (Note 2) H11F1 H11F2 H11F3 Input to Output Isolation Voltage VISO Input-output Isolation


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PDF H11F1, H11F2, H11F3 E91231 DB91018-AAS/A3 TRANSISTOR R46 H11F1
H11F1 HARRIS

Abstract: No abstract text available
Text: _ HA RR IS S E M I C O N D S E C T O R 37E D H11F1 , H11F2, I 4 3 Ü2 27 1 O G S T n O , ljusec 300 pps) Reverse Voltage '- a = 25°C *150 milliwatts 60 milliamps 500 milliamps 3 , 3.43 2 92 6.10 6 86 _ INCH ES M IN. NO TES M AX. 330 350 300 REF. .340 .020 016 , IM EN SIO N . PHOTO DETECTOR Power Dissipation Breakdown Voltage H11F1 -H 1 1 F 2 H11F3 , PLANE. TA = 25°C * 300 milliwatts 4. FO U R PLACES. ± 30 volts ± 1 5 volts ±100 milliamps


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PDF H11F1, H11F2, H11F3 92CS-42662 92CS-429S1 H11F1 HARRIS
11F2

Abstract: No abstract text available
Text: Optoisolator Specifications H11F1 , H11F2, H11F3 T h e H I IF fam ily con sists o f a g alliu , ontinuous) * * D e ra te 4 .0 m W /°C above 2 5°C . T a = 25°C * 300 m illiwatts ± 30 volts ± 15 volts , Specifications H11F1 , H11F2, H11F3 Individual Electrical Characteristics: (25°C Unless Otherwise Specified , (V46 = 15V; IF = 0 ) 300 Capacitance - C 46 (V46 = 0, IF = 0, f = 1 MHz) - - volts volts nanoam , (IF = 16m A , i46 = 2 5 ß A RMS, f = 1 KHz) H i IFL H 11F2 H 11F3 H11F1 HI 1F2 H 11F3 _ _ _


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PDF H11F1, H11F2, H11F3 11F2
Not Available

Abstract: No abstract text available
Text: Optoisolator Specifications H11F1 , H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode , e *1 0 0 m i ll iw a t t s 6 0 m illia m p s I am p 6 350 .330 . 300 RE F 340 020 016 , H11F1 , H11F2, H11F3 Individual Electrical Characteristics: IN F R A R E D E M IT T IN G D IO D E TYP , oC ) O f f - S t a t e R e s is t a n c e - r 4 6 (V 4 6 = 1 5 V ; I f = 0 ) - 300 - C a p a , A R A C T E R IS T IC S Optolsolator Specifications H11F1 , H11F2, H11F3 TA -A M 0 IE N T


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PDF H11F1, H11F2, H11F3 H11F1
2007 - Not Available

Abstract: No abstract text available
Text: °C All BV4-6 Breakdown Voltage (either polarity) H11F1M, H11F2M 300 mW 4.0 Derate , C4-6 Capacitance V4-6 = 15 V, IF = 0, f = 1MHz 300 MΩ All 15 pF Transfer , 300 350 V4-6 – D.C. BIAS VOLTAGE (mV) ©2007 Fairchild Semiconductor Corporation H11F1M , Marking Information 1 H11F1 X YY Q V 3 2 6 4 5 Definitions 1 Device number


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PDF H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M
2007 - H11f1 variable resistor 500k

Abstract: h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM H11F3M
Text: -6 Breakdown Voltage (either polarity) H11F1M, H11F2M 300 mW 4.0 Derate linearly from 25 , = 0, f = 1MHz M All 300 15 pF Transfer Characteristics Symbol Characteristics , 100 150 200 250 300 350 V4-6 ­ D.C. BIAS VOLTAGE (mV) ©2007 Fairchild , Marking Information 1 H11F1 X YY Q V 3 2 6 4 5 Definitions 1 Device number


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PDF H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM
4N2b

Abstract: h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY17 CNY47 H11A2 H11A3
Text: 30 30 30 30 70 70 70 30 30 30 30 30 30 30 30 30 30 30 30 300 300 200 200 80 80 300 25 25 25 30 30 , 100 80 55 55 55 100 100 100 500 500 1.0 1.0 1.0 1.0 1.0 BILATERAL ANOLOG FET OUTPUT TYPE H11F1 , .60 mA Peak Forward Current 11 fis pulse width, 300 pps , Peak Forward Current 11 /is pulse width, 300 pps , Dissipation. 300 mW® Notes: (1


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PDF CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 4N2b h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY47 H11A2 H11A3
2007 - H11F1M

Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M
Text: mW mW/°C mW mW/°C V V mA All H11F1M, H11F2M H11F3M All 300 4.0 ±30 ±15 ±100 I4 , 15 V, IF = 0 V4-6 = 15 V, IF = 0, f = 1MHz All All All H11F1M, H11F2M H11F3M All All All All 300 15 , 1 50 100 150 200 250 300 350 V4-6 ­ D.C. BIAS VOLTAGE (mV) ©2007 Fairchild Semiconductor , Information 1 H11F1 V 3 4 2 6 X YY Q 5 Definitions 1 2 3 4 5 6 Fairchild logo Device number


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PDF H11F1M, H11F2M, H11F3M E90700) H11FXM H11F1M H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers
Diode 10Z

Abstract: 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 CNY17
Text: 30 30 30 30 70 70 70 30 30 30 30 30 30 30 30 30 30 30 30 300 300 200 200 80 80 300 25 25 25 30 30 , 100 80 55 55 55 100 100 100 500 500 1.0 1.0 1.0 1.0 1.0 BILATERAL ANOLOG FET OUTPUT TYPE H11F1 , Peak Forward Current 11 fis pulse width, 300 , Peak Forward Current 11 /is pulse width, 300 pps , Dissipation. 300 mW® Notes: (1


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PDF CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 Diode 10Z 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3
h11cx

Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
Text: _5275DL H11F1 H11F13S H11F1SD H11F2300 H11F23SD H11F2W H11F3 H11F33S H11F3SD H11FX_5393 H11FX


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PDF 0034307-A MOC8102 MOC81023S MOC8102S MOC8103 MOC81033S MOC8103SD MOC8104300 MOC81043SD MOC8104W h11cx H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
2002 - triac 4N35

Abstract: moc3041 H11F1 hma121 h11ag3 H11D3-20 MOC3021 application moc3041 application note MOC3051 mct4
Text: H11A817C 200 400 35 NA 6 2.4/2.4 5.3 H11A817D 300 600 35 NA 6 2.4 , 7 3/3 3.75 HMA2701 50 300 40 NA 7 3/3 3.75 HMHA2801 80 600 , - H11A5-M 5.3 4.2 H11AV1-M 100 300 70 70 7 15/15 4.2 H11AV1A-M 100 300 70 70 7 15/15 4.2 H11AV2-M 50 - 70 70 7 15/15 4.2 , MCT2E-M 4.2 MOC8100-M 50* - 30 70 NA 20/20 4.2 SL5500 50 300 30


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PDF H11A817 H11A817A H11A817B H11A817C H11A817D HMA121 HMA124 HMA2701 HMHA2801 HMHA281 triac 4N35 moc3041 H11F1 hma121 h11ag3 H11D3-20 MOC3021 application moc3041 application note MOC3051 mct4
2007 - H11f1 variable resistor 500k

Abstract: bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F3M H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
Text: -6 Breakdown Voltage (either polarity) H11F1M, H11F2M 300 mW 4.0 Derate linearly from 25 , = 0, f = 1MHz M All 300 15 pF Transfer Characteristics Symbol Characteristics , I4-6 = 10µA RMS r(on) = 200 1 0 1 50 100 150 200 250 300 350 V4-6 ­ D.C , -5-2 approval, Surface Mount, Tape and Reel Marking Information 1 H11F1 X YY Q V 3 2 6 4


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PDF H11F1M, H11F2M, H11F3M H11FXM E90700) H11F3M H11f1 variable resistor 500k bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
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