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1999 - Granberg

Abstract: No abstract text available
Text: Dye and Helge Granberg RF Circuit Design - Chris Bowick Polyfet Article - Rf Topics Transmission


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PDF 250Watt Granberg
1999 - BFG425

Abstract: amplifier rf 18dbm gain 18db BFG425W BFG425 spice parameters High IP3 Low-Noise Amplifier Granberg BJT IC Vce BFG425 Power amplifier
Text: . G. Gonzalez, Microwave Transistor Amplifiers, Prentice-Hall, 1984, pp. 139-193 4 . N. Dye , H. Granberg , Radio Frequency Transistors Principles and Practical Applications, ButterworthHeinemann, 1993, pp. 204-231. 5 . N. Dye , H. Granberg , Radio Frequency Transistors Principles and Practical Applications


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"BJT Transistors"

Abstract: Granberg Granberg dye BFG425 BFG425W High IP3 Low-Noise Amplifier C71P transistor databook BJT 24 TRANSISTOR MAKING BFG425 Power amplifier
Text: . 123-160. 3 . G. Gonzalez, Microwave Transistor Amplifiers, Prentice-Hall, 1984, pp. 139-193 4 . N. Dye , H. Granberg , Radio Frequency Transistors Principles and Practical Applications, ButterworthHeinemann, 1993, pp. 204-231. 5 . N. Dye , H. Granberg , Radio Frequency Transistors Principles and Practical


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Granberg

Abstract: motorola LM335 ericsson rf AN1643 ericsson 3108 LM335 Granberg dye Ericsson Base Station MOTOROLA small signal transistors
Text: Fundamentals, AddisonWesley, 1996. 2. N. Dye , H. Granberg , Radio Frequency Transistors Principles and


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PDF AN1643. Granberg motorola LM335 ericsson rf AN1643 ericsson 3108 LM335 Granberg dye Ericsson Base Station MOTOROLA small signal transistors
Granberg

Abstract: MAPM-030400-060C00 Granberg VSWR Protection MAPM-030400 AN4003 AD8361 AD8362 AN-20 MAPM
Text: ] H.Krauss, C. Bostian, F. Raab, Solid State Radio Engineering, John Wiley and Sons, 1980 [2] N. Dye , H. Granberg , Radio Frequency Transistors: Principles and Practical Applications, ButterworthHeinemann, 1993


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PDF AN4003 MAPM-030400-010C00 MAPM-030400-060C00 Granberg Granberg VSWR Protection MAPM-030400 AN4003 AD8361 AD8362 AN-20 MAPM
Granberg

Abstract: eb104 mylar capacitor 154 EB-104 Wideband Power Transformers Amidon Tech FB-77-6301 amplificador 50 watt motorola an215a cermet trimpot
Text: . 13 References 1. H. Granberg , " Power MOSFETs ver sus Bipolar Transistors" RF Design, Nov/Dec , ", Motorola Application Note AN-215A 6. H. Granberg , " Linear Amplifiers for Mobile Operation" Motorola Application Note AN-762 7. H. Granberg , " Get 600 Watts from Four Power FETs", Motorola Engineering Bulletin


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PDF AR314/D AR314 60-WATT C77690 Granberg eb104 mylar capacitor 154 EB-104 Wideband Power Transformers Amidon Tech FB-77-6301 amplificador 50 watt motorola an215a cermet trimpot
1993 - Granberg

Abstract: motorola application note AN-758 stackpole 57-1845-24b Stackpole 57-3238 AN762 RF AMPLIFIER t3c6c mc1723g AN762 eb27a Q1 BC 558 transistor
Text: AMPLIFIERS FOR MOBILE OPERATION Prepared by: Helge O. Granberg RF Circuits Engineering INTRODUCTION The , . Granberg , H.: A Two Stage 1 kW Solid-State Linear Amplifier, AN-758 Motorola Semiconductor Products, Inc. 3. Granberg , H.: Get 300 W PEP Linear Across 2 to 30 MHz From This Push-Pull Amplifier, EB-27A Motorola Semiconductor Products Inc. 4. Granberg , H.: Broadband Transformers and Power Combining , -555 Motorola Semiconductor Products Inc. 7. Granberg , H.: Measuring the Intermodulation Distortion of Linear


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PDF AN762/D AN762 MRF455 MRF460 MRF453 MRF454 MRF458 MRF421 Granberg motorola application note AN-758 stackpole 57-1845-24b Stackpole 57-3238 AN762 RF AMPLIFIER t3c6c mc1723g AN762 eb27a Q1 BC 558 transistor
This article

Abstract: vmil120ft VMIL20FT acrian RF POWER TRANSISTOR F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft n-channel enhancement mode vmos power fet VMIL40FT
Text: . 8. "RF Power Fets. Their Characteristics and Applications" Helge Granberg . Motorola Application Note AR346. 9. "Understanding RF Data Sheet Parameters" Norman E. Dye . Motorola Application Note. AN1107


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PDF namely988. AR346. AN1107. This article vmil120ft VMIL20FT acrian RF POWER TRANSISTOR F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft n-channel enhancement mode vmos power fet VMIL40FT
Granberg

Abstract: AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Building push-pull multioctave, VHF power amplifiers Design of H. F. Wideband Power Transformers 300w amplifier rf power transformers
Text: BUILDING PUSH-PULL, MULTIOCTAVE, VHF POWER AMPLIFIERS Prepared By H. ü. Granberg Motorola , transistors-either FETs or bipoH.O. GRANBERG , M em ber of the Technical Staff, 5005 East McDowell Rd., Motorola , of any solidstate device. ·· 1. H. O. Granberg , "New MOSFETs Simplify High Power RF Amplifier Design , January-March, 1987. 7. H. O. Granberg , "Good RF Construction Practices and Techniques," RF Design, September-October, 1980 and Motorola Inc. Reprint AR164. 8. H. O. Granberg , A Two Stage 1 kW Solid State Linear


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PDF AR305/D Granberg AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Building push-pull multioctave, VHF power amplifiers Design of H. F. Wideband Power Transformers 300w amplifier rf power transformers
1993 - MHW591

Abstract: MHW592 MRF475 MHW591 equivalent motorola MHW592 MRF476 equivalent motorola application note AN-758 MRF476 fair-rite 2643006301 mrf475 transistor
Text: Order this document by AN779/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN779 LOW-DISTORTION 1.6 TO 30 MHz SSB DRIVER DESIGNS Prepared by: Helge O. Granberg RF Circuits Engineering , McGraw-Hill. 3. Reference Data for Radio Engineers, ITT, Howard & Sams Co., Inc. 4. H. Granberg , "Broadband , . Granberg , "Measuring the Intermodulation Distortion of Linear Amplifiers," EB-38, Motorola Semiconductor , . 7. Data Sheets, Motorola MRF475, MRF476, MRF433, and MHW591 8. H. Granberg , "Two-Stage 1 KW


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PDF AN779/D AN779 MHW591 MHW592 MRF475 MHW591 equivalent motorola MHW592 MRF476 equivalent motorola application note AN-758 MRF476 fair-rite 2643006301 mrf475 transistor
1993 - Stackpole 57-9322-11

Abstract: EB-27 motorola 2N6368 ecom-2989 Design of H. F. Wideband Power Transformers Granberg EB-32 complementary symmetry amplifier AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors Indiana general ferrite core 2N6367
Text: BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits , , McGraw-Hill. 5. Granberg , H.; Broadband Transformers and Power Combining Techniques for RF, AN-749 Motorola Semiconductor Products Inc., June 1975. 6. Granberg , H.; Get 300 Watts PEP Linear Across 2 to 30 MHz From This Push-Pull Amplifier, EB-27 Motorola Semiconductor Products Inc., September 1974. 7. Granberg , H.; A , Inc., February 1975. 8. Granberg , H.; Measuring the Intermodulation Distortion of Linear Amplifiers


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PDF AN593/D AN593 Stackpole 57-9322-11 EB-27 motorola 2N6368 ecom-2989 Design of H. F. Wideband Power Transformers Granberg EB-32 complementary symmetry amplifier AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors Indiana general ferrite core 2N6367
1991 - SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages rf POWER BJTs mrf154 amplifier all mosfet vhf power amplifier narrow band uhf microwave fet
Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits , . ­82. Jack Browne, "RF Devices Gain High Power Levels", Microwaves & RF, Nov. ­87. H. O. Granberg , Sector, Phoenix, Arizona. H. O. Granberg , "RF Power MOSFETs", Article Reprint AR­165S, Motorola


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PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages rf POWER BJTs mrf154 amplifier all mosfet vhf power amplifier narrow band uhf microwave fet
1999 - 800w power amplifier circuit diagram

Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
Text: Circuit Diagram of the Power Factor Correction Power Supply Page 8 REFERENCES 1. H.O. Granberg , Data, Volume II, DL110 Rev 4. 2. H.O. Granberg , "Broad Band Transformers and Power Combining


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PDF APT9502 56MHz 1000Watt, 56MHz 300VDC U-134, APT9303. 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
1993 - MRF156

Abstract: AN-1041 Granberg AN1041 mrf155 mrf151g 300 MRF153 MRF154 AN1041/D MRF430
Text: Order this document by AN1041/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1041 MOUNTING PROCEDURES FOR VERY HIGH POWER RF TRANSISTORS Prepared by: Helge O. Granberg RF Engineering Advanced Products Group RF power semiconductors such as MRF153, MRF154, MRF155, MRF156 and MRF430 are housed in Case 368-01, whereas MRF141G, MRF151G, MRF175G and MRF176G use Case 375-01 (both shown below). All of these are high power devices (200 ­ 600 W), which results in an abnormally large amount


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PDF AN1041/D AN1041 MRF153, MRF154, MRF155, MRF156 MRF430 MRF141G, MRF151G, MRF175G AN-1041 Granberg AN1041 mrf155 mrf151g 300 MRF153 MRF154 AN1041/D
1993 - EB-27 motorola

Abstract: hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers
Text: Order this document by AN749/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN749 BROADBAND TRANSFORMERS AND POWER COMBINING TECHNIQUES FOR RF Prepared by: H. Granberg RF Circuits Engineering INTRODUCTION The following discussion focuses on broadband transformers for RF power , , pp. 137­146, November 1972. RF Application Reports 6. Granberg , H.: Broadband Linear Power Amplifiers Using Push-Pull Transistors, AN-593, Motorola Semiconductor Products Inc. 7. Granberg , H.: Get


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PDF AN749/D AN749 EB-27 motorola hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers
1997 - 1000w power amplifier circuit diagram

Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
Text: H. O. Granberg , "Good RF Construction Practices and Techniques," Motorola Application Note AR164 , . Granberg , "Broad Band Transformers and Power Combining Techniques for RF," Motorola Application Note AN749


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PDF APT9701 12MHz O-247 300VDC AN749, DL110, 1000w power amplifier circuit diagram 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
1993 - BROADBAND TRANSFORMERS AND POWER

Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 LINEAR RF BOARD MRF317 linear amplifier AN211A Granberg Arco 403
Text: , Chapter 4, ARRL, Inc., Newington, CT. 3. H. Granberg , Power MOSFETs versus Bipolar Transistors, R.F , Electronic Show & Convention, December, 1982. 5. H. Granberg , Broadband Transformers and Power Combining


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PDF AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 LINEAR RF BOARD MRF317 linear amplifier AN211A Granberg Arco 403
1993 - magnetic core ferroxcube 3E2A

Abstract: ferroxcube 4C4 toroid core EB-27 motorola ecom-2989 Stackpole Electronics 57-0572-27A philips choke vk200 Stackpole 57-9322-11 magnetic core philips 3E2A Motorola AN-546 A73D
Text: Order this document by AN758/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN758 A TWO-STAGE 1 kW SOLID-STATE LINEAR AMPLIFIER Prepared by: Helge O. Granberg RF Circuits Engineering , 1964. Granberg , H.: Broadband Linear Power Amplifiers Using Push-Pull Transistors, AN-593, Motorola Semiconductor Products Inc. Granberg , H.: Get 300 Watts PEP Linear Across 2 to 30 MHz From This Push-Pull Amplifer, EB-27, Motorola Semiconductor Products Inc. Granberg , H.: Broadband Transformers and Power


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PDF AN758/D AN758 50-Ohm magnetic core ferroxcube 3E2A ferroxcube 4C4 toroid core EB-27 motorola ecom-2989 Stackpole Electronics 57-0572-27A philips choke vk200 Stackpole 57-9322-11 magnetic core philips 3E2A Motorola AN-546 A73D
1993 - william orr

Abstract: 2204B Granberg MOTOROLA linear handbook EB38 papp EB-38 Nippon capacitors
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by EB38/D SEMICONDUCTOR ENGINEERING BULLETIN EB38 MEASURING THE INTERMODULATION DISTORTION OF LINEAR AMPLIFIERS Freescale Semiconductor, Inc. Prepared by: Helge Granberg Circuits Engineer, SSB The measured distortion of a linear amplifier, normally called Intermodulation Distortion (IMD), is expressed as the power in decibels below the amplifier's peak power or below that of one of the tones employed to produce the


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PDF EB38/D william orr 2204B Granberg MOTOROLA linear handbook EB38 papp EB-38 Nippon capacitors
1993 - mosfet class d

Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET all mosfet vhf power amplifier narrow band Granberg mosfet amplifier class ab rf CLASS AB MOSFET RF amplifier all mosfet vhf power amplifier 150 watt amplifier advantages and disadvantages MC10198
Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less than half the price? Several manufacturers have recently introduced power FETs for RF amplifier applications. Devices with 100 W output capabilities are available for VHF frequencies and smaller units are


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PDF AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET all mosfet vhf power amplifier narrow band Granberg mosfet amplifier class ab rf CLASS AB MOSFET RF amplifier all mosfet vhf power amplifier 150 watt amplifier advantages and disadvantages MC10198
1995 - amidon 43 toroid core

Abstract: amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer
Text: commercial Row, Wallkill, NY 12589. 6 Granberg , H. O., Wideband RF Power Amplifier, R.F. Design, February


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PDF APT9802 ARF448A/B amidon 43 toroid core amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer
BROWN BOVERI guanella

Abstract: transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent
Text: ; "Introduction to Microwave Circuits" - Ch 12; IEEE Press 2001; ISBN:0-7803-4704-8 4. N.Dye & H. Granberg ; "RF


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PDF 0-89000679-7X ARRL1990; BROWN BOVERI guanella transistor c 5287 800w rf power amplifier circuit diagram transmission line transformers Design of H.F. Wideband Power Transformers Practical Wideband RF Power Transformers 300w rf amplifier uhf guanella transformers 325 339 H C 5287 equivalent
Granberg

Abstract: PUSH PULL MOSFET DRIVER watts mosfet class d AN-860 FET small signal transistors motorola all mosfet vhf power amplifier MC10198 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages
Text: AN-860 Application Note POWER MOSFETs versus BIPOLAR TRANSISTORS By Helge 0. Granberg Sr. Staff Engineer Motorola Semiconductor Products, Inc. What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less than half the price? Several manufacturers have recently introduced power FETs for RF amplifier applications. Devices with 100 W output capabilities are available for VHF frequencies and smaller units are made forUHF operation. All are enhancement


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PDF AN-860 AN86Q/D AN860/D Granberg PUSH PULL MOSFET DRIVER watts mosfet class d AN-860 FET small signal transistors motorola all mosfet vhf power amplifier MC10198 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages
1993 - vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC LZN2-UA-DC12 NF2-12 mrf245
Text: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique features printed inductors, the design theory of which is fully described. Complete constructional details, including a printed circuit layout, facilitate easy reproduction of the amplifiers. Solid-state VHF


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PDF AN791/D AN791 vhf linear amplifier mrf245 amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC LZN2-UA-DC12 NF2-12 mrf245
ericsson bts operation and maintenance

Abstract: bts gsm ericsson bts ericsson RBS abbreviations Ericsson HLR msc gsm ericsson converged packet core gateway BTS ericsson mobile switching center msc RBS ericsson maintenance
Text: GSM on the Net Olle Granberg GSM on the Net introduces an entirely new concept for business communications, offering voice, data and multimedia services over corporate intranets. The voice service can be either fixed or mobile (in the latter case using GSM access). GSM on the Net provides operators and business users with a means of optimizing personal and organizational communications and work processes by adding terminal and user mobility to their existing IP network. The author describes GSM on the


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