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Goldstar prime 2 Datasheets Context Search

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Goldstar prime 2

Abstract:
Text: for Prime 3A O a. cl a. a. q. a. o 55 O ILI 2 < (5 4-130 405A7S7 0004510 125 GoldStar GM82C803 A/B 2 , Extended Control Register (ECR|. 4-133 4Q2Ö7S7 0004513 «m GoldStar GM82C803 A/B ( 2 ) Serial Interface Pin , data from the communication line or Modem. 4-134 4020757 0004514 870 GoldStar GM82C803 A/B ( 2 ) Serial , – 402Ö757 0004520 074 ■GoldStar GM82C803 A/B 4.X.3 Power Down Register (PDR) Index = A2 7 6 5 4 3 2 1 0 , GoldStar GM82C803 A/B 4.1.6 ECP Register Index = A5 7 6 5 4 3 2 1 0 Reserved nMR, PDIR (=1) Select : nMR


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PDF GM82C803A/B GM16C550) GM82C803 Goldstar prime 2 goldstar gm16c450 prime2 GOLDSTAR GD75188 prime3b Goldstar prime GM16C550 gm82c803a GM16C450
Goldstar prime 2

Abstract:
Text: 2 . The result of any operation is always loaded into the Output Register. 7-253 GOLDSTAR , 4B82B CARRY LOOKAHEAO GENERATOR TF Fig. 2 CARRY LOOKAHEAD EXPANSION GOLDSTAR TECHNOLOGY INC , . 7-257 " GOLDSTAR TECHNOLOGY INC-. 04E D | 4 D 2 Û 7 S 7 l ö b l T | ~ 4028757 G O L D , external CP and E X inputs. 6 . In p u t T ra n s itio n Tim es < 2 0 ns. 7-258 GOLDSTAR TECHNOLO GY , GOLDSTAR TECHNOLOGY INC-. OME D | MGSÖ7S7 IñSS T -V 9 - // 4028 75 7 G O L D S T A R T


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PDF GD4705B/GD4705BX 5B/GD4705BX Goldstar prime 2 OG 72 DN 1024 R
76C256

Abstract:
Text: – 4D2fl?S7 □□□3SflS T ■GST T -4 6 - 2 3 -1 2 GoldStar g m 76C256/ ivll * 2 , / 47E D 402075? G0 G 3 5 ö t . 1 ■T -4 6 - 2 3 -1 2 GoldStar GM76C256/L/LL , / 47E D ■4000757 0QQ35Û7 3 ■GST T -4 6 - 2 3 -1 2 GoldStar Write Cycle 1 (WE Controlled) (Note 1, 2 ) 256 g m 76C256 l /l l GOLDSTAR TECHNOLOGY INC/ 47E D GoldStar 0003500 5 ■GST GM76C256/L/LL Write Cycle 2 (CS Controlled) (Note 1


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PDF GM76C256/L/LL GM76C256/L/LL 27JMIN 76C256 GM76C256 goldstar GM76C256L-85
Not Available

Abstract:
Text: ^ 775 GoldStar GM76C256BL/BLL *1 Test Conditions 1. Input pulse level: 0.6V to 2.4V 2 . tr = , ‹ Controlled) (Note 1, 2 ) 308 MD2Û757 0 0 Q 3 cî b 2 2bT GoldStar GM76C256BL/BLL Write , GoldStar GM76C256BL/BLL 32,768 W ORDSx 8 BIT GOLDSTAR ELECTRON CO., LTD. CMOS STATIC RAM , offered in a 28-pin DIP(600mil), SOP(330mil) and TSOP I (0814). 28 □ 2 27 j m A7 n , €¢ Single 5V ± 10% Operation • Standard 28 DIP, SOP and TSOP I 1 12 17 □ 1/05 1 /0 2


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PDF GM76C256BL/BLL GM76C256B 55/70/85ns. GM76C256BL/BLL 28-pin 600mil) 330mil)
Not Available

Abstract:
Text: GOLDSTAR TECHNOLOGY IN C/ 47E D ■4020757 000343S 2 ■GST T , 2 . EARLY WRITE CYCLE 110 (MIN.) GOLDSTAR TECHNOLOGY IN C/ 47E D ■4QSÔ7S7 0 0 D 3 4 4 2 T M GST GoldStar _ _ GM71C4100A/AL T , PAGE MODE READ CYCLE 115 GOLDSTAR TECHNOLOGY IN C/ M7E D ■4G 2 fl 7 57 0003M47 , WRITE CYCLE GOLDSTAR TECHNOLOGY IN C/ 47E D ■402Ô757 OOOBMM'J 2 « G S T


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PDF GM71C4100A/AL 300-mil 20-pin 400-mil 05A7S7
ICE 47E

Abstract:
Text: High Voltage 2.4 Input Low Voltage - 2 .0 VlL 68 70°C) GOLDSTAR TECHNOLOGY I N C , * tWCS ¿ tw C S (MIN.) FIGURE 2 . EARLY WRITE C Y C L E 75 GOLDSTAR TECHNOLOGY I N C / 47E D , M02fl757 000340*1 1 GoldStar G M 71C 1000/L T -4 6 - 2 3 -15 tRASC tRP tRHCP RAS 'CSH , Hi 402 Û757 0 0 0 3 4 1 2 1 GoldStar GST GM71C1000/L IR C IRP IRAS V ] 'L , GOLDSTAR TECHNOLOGY I N C / 47E ]> 402 A7S 7 000 33^5 GoldStar □ ■GST T-V6-Z3


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PDF GM71C1000/L GM71C1000/L ICE 47E
GM71C17400AJ6

Abstract:
Text: 10 - 10 - ns 140 M 0 2 f l 75 7 □D037c 1cl Note GoldStar GM71C17400A , GM71C17400A GoldStar 4,194,304 WORDS X4BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD , and outputs TTL Com patible • 2 ,048 Refresh Cycles/32ms • Test function: 16-bit parallel test m ode 135 402Ô757 00037=14 T0Ö GoldStar GM71C17400A Pin Description Function , bient T em p eratu re u n d e r Bias T stg Storage T em p eratu re (Plastic) -5 5 -1 2 5 °c


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PDF GM71C17400A GM71C17400A GM71C17400AJ6 GM71C17400AJ7 GM71C17400AJ-7 GM71C17400AJ-6 GM71C17400AJ8
GMM791000S

Abstract:
Text: - CÄS W E- vccVSS- WE T^ GOLDSTAR TECHNOLOGY INC/ 47E D ■4D2Ô7S7 GQG3SÜ 2 2 , GOLDSTAR TECHNOLOGY INC/ 47E D GoldStar GST WÊ 40267S7 QD03S00 _r - y ^ - 2 3 " / g G M M 7 9 1 0 0 0 S - 6 0 /7 0 /8 0 /1 0 1,048,576 WORDS x 9 BIT CMOS , ) Pin Configuration (Top View) VCC CAS DQO A0 H U 3 E B 3H tc A C tRC tp c n 2 , 100 • Low Power Active: 4,455/3,960/3,465/ 2 ,970mW (MAX) Standby: 49.5mW (CMOS level: MAX) â


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PDF 40267S7 QD03S00 GMM791000S GM71C1000SJ)
GM71C464A-80

Abstract:
Text: GoldStar Notes : ' 1. AC m easurem ents assume t r = 5ns. 2 . Assumes that tRCD i tRCD(max) and tRAD , FIGURE 2 . EARLY WRITE CYCLE 56 D ™ '1 Care GoldStar GM71C464A Do"'' Care FIGURE 3 , 4 « .V GoldStar GM71C464A 65,536 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO , ~ CÄS | WE [ T T Í] 1/03 RÄS [ T t4~| AO A6 |~ 6~ I 3] A1 A 5 [T Ì 2 ] A2 , Compatible • 256 Refresh Cycles/4 ms GM71C464A GoldStar Pin Description Function Pin


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PDF GM71C464A GM71C464A 536x4 GM71C464A-80 71C464A GM71C464A-10
GM71C464A

Abstract:
Text: ct 1 3 5 W 2 /I02 SE S I03 i L, Vcc (Bottom View) 221 GoldStar P in D escription , data are written into RAM * 2 W/IOO-3 > " H " Non masked W/IOO-3 = " L " Masked 224 GoldStar , il 2 ,3 227 GoldStar DC Characteristics (Continued) Symbol ICC12 GM53C261 Parameter , 0.8 and 2.4V 0.8 and 2.4V 0.8 and 2.4V 2 TTL a n d lOOpF 2 TTL and 50pF 228 GoldStar AC , tcAP16. M easured w ith a load equivalent to 2 TTL loads and 50 pF in parallel. 232 GoldStar


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PDF 256x4 GM53C261-12 alone-50 alone-35 together-85 402A7S7 T-90-20 GM71C464A
GMM784000S-60

Abstract:
Text: DQ6 NC DQ7 PQ* 2 RAS PC AS* 2 PD* 2 Vcc •NOTE: 1. This component is not included in the GMM784000S. 2 . In case of GMM784000S, Pin 26, 28 and Pin 29 are not connected. 181 GoldStar GMM784000S GMM794000S Note: 1. This component is not included in the G M M 784000S. 2 . In case of GM , GMM784000S-60/70/80 GoldStar 4.194.304 WORDS X 8 BIT GM M 794000S-60/70/80 GOLDSTAR , Compatible 1,024 Refresh Cycles/16ms Pin Sym bol Pin Sym bol Pin Sym bol 1 2 3 4 5 6


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PDF GMM784000S-60/70/80 794000S-60/70/80 GMM78 4000S 304x8 GM71C4100AJ) GMM794000S tACP14. GMM784000S GMM794000S GMM784000S-60 GoldStar GMM784000S-60/70/80
71C4400A

Abstract:
Text: . 2 V 126 GOLDSTAR TECHNOLOGY INC/ 4 7E D ■4020757 GoldStar GG03M5à , . CAS-BEFORE-RAS REFRESH CYCLE 135 GOLDSTAR TECHNOLOGY IN C/ 47E D ■4G 2 fl 7 57 , INPUT * 2 : VALID OUTPUT FIGURE 11. FAST PAGE MODE READ-MODIFY-WRITE CYCLE 140 GST GOLDSTAR , GOLDSTAR TECHNOLOGY IN C/ 47E D ■402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The


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PDF GQ03455 71C4400A/AL GM71C4400A/AL 300-mil 20-pin 400-mil 71C4400A
staircase generator

Abstract:
Text: - 2 5 6 R xCx · Fig. 10 Continuou« FrM-run Operation Exampta of Output 7-303 GOLDSTAR , 'i& à e tL u m GOLDSTAR TECHNOLOGY I N Cn a & ä tta áüí DME D | 4 G2 Ö7 S7 QDDnDl 4028757 GOLDSTAR TECHNOLOGY INC. 04E 01901 D T- 57-/? GD4722B , LOW POWER DISSIPATION PIN NAMES Rx/Cx T MOD MR V REG TBO O, ,0 2 ,0 4jL 0 8,_ °1 6 '°3 2 -° 6 4 '° 1 2 , Output Time Base Output (Open Drain) Data Outputs (Active Low-Open Drain) LOGIC SYMBOL 13 1 2 MOO


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PDF GD4722B 4722B staircase generator DIGITAL TACHOMETER astable clock generator GoldStar master i GoldStar master i CONTROLLER programmable timer counter staircase generator digital staircase timer controller
GMM791000NS

Abstract:
Text: G M M 7 9 1 0 0 0 N S-6 0 /7 0 /8 0 GoldStar 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000NS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM (GM71C4400AJ, 1M x 4) sealed in 20 pin SOJ package and an 1M , has decoupling capacitors mounted under each DRAM. • High Density Standard 30 pin mounting 2 pcs , GM71C4400AJ F ¡> c A2 u E i B ÎÔ ] ^ r Vss 0Q 2 A0-A9 RÄ5 CAS W E Vcc


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PDF GMM791000NS GM71C4400AJ, 71C1000SJ, M791000NS 791000NS
LA 7326

Abstract:
Text: -, D4E D | 4D2Ö757 DODITES I 4028757 GOLDSTAR TECHNOLOGY INC. 04E 0 1 9 2 5 7-67-2/-57 , iâ Ê â tà h GOLDSTAR TECHNOLOGY INCn 04E » | 4 G 2 Û 7 5 7 n 5 b f~ 4028757 GOLDSTAR TECHNOLOGY GS BLOCK D IA G R A M INC. 04E 0 1 9 2 6 d T- 67'-2Í"57 CMOS GD4734B , 7-323 « ä iM GOLDSTAR TECHNOLOGY INCi D4E D | 4 G 2 Ö 7 5 7 D D D n a ? E |~ 4028757 GOLDSTAR TECHNOLOGY INC. GD4734B 04E 0 1 9 2 7 D T " ¿ 7 - J I-Sl GS CMOS DC


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PDF GD4734B 4734B GD4734B LA 7326 AN 7323 IC
Not Available

Abstract:
Text: voltage. 449 ■4 0 2 0 7 5 7 00040*10 174 GM71C4170A/AL GM71CS4170A/AL GoldStar , GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT , (L-series) 2 WE byte Control Self-Refresh Operation (GM71CS4170A/AL) 40 ZIP 40 SOJ tc A C 70 GM71C4170A/AL-70 40 TSOP II Vcc [ I 1 40 □ V ss i/o o C 2 39 □ i/ o í C 3 , V ss V cc c 1 l/OO c 2 1/01 c 3 7 1/013 I/02 9 1/015 I/03 3 1/010 13 1/01 17


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PDF GM71C4170A/AL GM71CS4170A/AL X16BIT GM71C4170A/AL 144x16
GM7IC4100

Abstract:
Text: GM71C4100A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM , 20 m v ss CAS O 2 1 20 m 2 19 m Q 3 18 □ CAS NC □ 4 , WE [ I 2 19 m ^buT RAS Q 3 18 □ CAS NC Q 4 17 I ] NC A10C 5 , €” ^OUT C ' 20 1 19 2 I ] WE □ D in 18 3 NC L 17 4 □ NC A9 , A7 A 2 ¡~ 8 13 ^ A6 A2 9 11 Z I (TOP VIEW) 102 A6 10 90 VC C


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PDF GM71C4100A/AL GM71C4100A/AL 300-mil 20-pin 400-mil 300-mil GM7IC4100
Not Available

Abstract:
Text: CYCLE 123 4G2Ô757 0 0 0 3 7 Û 2 2Tb ■GoldStar GM71C16400A OE : Don’t care , GM71C16400A GoldStar 4,194,304 WORDS X4BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD , standard 300 mil 2 4 pin SOJ. The package size provides high system bit densities and is compatible with , 0 0 3 7 7 1 400 GoldStar GM71C16400A Pin Description Pin Function Pin Function , Unit 0 -7 0 °C -5 5 -1 2 5 °C i q Param eter Symbol V T stg Storage


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PDF GM71C16400A 6400A 71C16400A DGQ37
GD4078B

Abstract:
Text: GOLDSTAR TECHNOLOGY 4 0 2 8 7 5 7 GOLDSTAR TECHNOLOGY IN C . INC-, OHE D | 04E 4 0 2 , ^ 6 i 6ä Ü i ii , OME D I GOLDSTAR TECHNOLOGY INC - MGBÖ7 S 7 1 7 3 Û f 4 0 2 8 7 5 7 , TEMP TEST CONDITIONS >DD Quiescent Power Supply Current 1 7.5 0.26 7.6 2 15 (lA (lA , DD «shown, V ^ - O Vi T A - 2 ^ ,C (See Note 2 ) SYMBOL PARAMETER Propagation Delay Output Tranritlon , * Additional DC Characteristics are listed In this section under 40008 Series CMOS Family Characteristics. 2


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PDF DQQ17 T-43-21 GD4078B 4078B 7-13S GD4078B GD407 GoldStar U-757 T-43-21
71C4400Bj

Abstract:
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT , Module, mounted 2 pieces of 4M bit DRAM (GM 71C4400BJ, 1M x 4) sealed in 2 pin SOJ package. The G M M , mounted for each DRAM. • High Density Standard 30 pin mounting 2 pcs of 4M DRAM G M 71C 4400BJ (SOJ , -DOS -DQ6 1/04 - DQ7 WE 1 B m S r=. ms 2 □ 8 m ST , ‹ Vcc v ss -H I-» o Vcc ‘ Vss - 161 4DHÔ7S7 GQG3617 33S GoldStar


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PDF GMM781000BN S-60/70/80 781000BN 71C4400BJ, 4400BJ 0003fl2fl GMM781000BNS M0267S7 71C4400Bj
GM76C88L-15

Abstract:
Text: GOLDSTAR TECHNOLOGY I N C / 47E D 405Ô7S7 D D0 35 73 3 I GST GoldStar , €¢ Access Time: 150ns. • Low Power Consumption Standby: 2 /iA Operation: 3mA • Completely Static RAM , Operation ( + 10%) • Standard 28 DIP and SOP capability Pin Configuration N C 1 ^ C A1 £ 2 2 A C 3 7 A C 4 6 A C 5 5 A Q 6 4 A3 C 7 A Q 8 2 ai n 9 A n 1 o 0 I/O c 1 o 1 i/oi c 1 2 1 2c 1 /0 3 V C1 ss 4 2 □ Vcc 8 2 □ we 7 2 □ C2 5 S 2 □A 5 8 2 □A 4 9


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PDF GM76C88L GM76C88L 100/iA. 150ns. 00G3Sfl T-46-23-12 GM76C88L-15 GM76C88L15 STATIC RAM 16x8
GM76C8128all

Abstract:
Text: – Cf.Q ■Control ÏÏÏÏJÏÏT X " w 2 ' i 5 « 361 GoldStar GM 76C812 8 A/AL/ALL Absolute , GoldStar GM 76C812 8 A/AL/ALL Write Cycle(l) (WE Controlled) (Notes 2 ,3,4) twc ADDRESS X )( tAS WE , Ü6Z GM76C8128A/AL/ALL BW UOlCl^CCr 131,072 WORDS x 8 BIT GOLDSTAR , CS1 ■CS2 NC C 3 vcc 1 32 A16 C 2 31 □ A15 A14 C 3 30 3 CS2 A12 C 4 29 H WE A7 C 5 , care 362 GoldStar GM 76C812 8 A/AL/ALL DC Electrical Characteristics (Vcc = 5V±10%, Ta = 0~70Â


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PDF GM76C8128A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) 70/8uuULJUUUU Gi\176C8128A/AL/ALL GM76C8128all 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85
auo 014

Abstract:
Text: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR , organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density, higher perform ance and , families such as Schottky TTL. • • • • Pin Configuration 1 i/oo C C 2 39 □ 1/015 I/09 2 3 38 □ 1/014 1/011 4 1/02 C 4 1/03 C 5 l 37 □ 1/013 36 â , –¡ □ □ □ Vss 1/015 1/014 1/013 1/012 c C c c c c c c c c 1 2 3 4 5 6


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PDF GM71C4260A/AL GM71CS4260A/AL X16BIT GM71C4260A/AL 71C4260A/AL 71CS4260A/AL auo 014
GM7IC4256A/AL-70

Abstract:
Text: 2 1 7 53^ A8 20 (TOP VIEW) 84 (TOP VIEW) (BOTTOM VIEW) GoldStar , Note ns 89 GoldStar GM71C4256A/AL Notes : 1. AC measurem ents assume tr = 5ns. 2 , care Ô Ë: D on't care tw c s^ tw c s (m in ) FIGURE 2 . EARLY WRITE CYCLE 92 GoldStar , GM71C4256A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM , ] A8 A1 [T Î*] A7 A2 [T 13] A6 A3 [L 12] A5 3 N.C. L 1 2 3 4 5


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PDF GM71C4256A/AL GM71C4256A/AL GM71C4256AJAL GM7IC4256A/AL-70 GM7IC4256A/AL-80
71C1000/L-70

Abstract:
Text: FIGURE 2 . EARLY WRITE CYCLE GoldStar GM71C1000/L IRC IRAS 1RP RAS \ •L tCSH , GM71C1000/L GoldStar 1,048,576 WORDS x l BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO, LTD , , Hidden Refresh Capability • All inputs and output TTL Compatible •5 1 2 Refresh Cycles/8ms • 512 , ) (BOTTOM VIEW) 67 GoldStar GM71C1000/L Pin Description Pin Function Pin Function A , 1.0 W °c -5 5 -1 2 5 1 0 V •Note: Operation at or above Absolute Maximum


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PDF GM71C1000/L GM71C1000/L 71C1000/L-70 71C1000
Supplyframe Tracking Pixel