The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N539 Microchip Technology Inc Power Bipolar Transistor, 55V V(BR)CEO, 1-Element, PNP, Germanium
2N539A Microchip Technology Inc Power Bipolar Transistor, 55V V(BR)CEO, 1-Element, PNP, Germanium
2N538 Microchip Technology Inc Power Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Germanium
2N1552 Microchip Technology Inc Power Bipolar Transistor, 1-Element, PNP, Germanium, TO-3, Metal, 2 Pin
2N398A Microchip Technology Inc Small Signal Bipolar Transistor, 105V V(BR)CEO, 1-Element, PNP, Germanium, TO-5
2N1303 Microchip Technology Inc Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Germanium, TO-5

Germanium itt Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
sx3704

Abstract: BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
Text: . . Base Base Base Base Base Base Base D D D D D A A AF7 Germanium PNf , AF5 Germanium PNP AC142 (G rp 5 or 6) Base D AC153 Base D AC128 Base D Germanium D river PNi , S ilicon Diodt BA151 BA147 BA114 1S44 D3 AF25 ME0404/2 GP Germanium Diodi NPN D , Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , ) Diode CLASSIFIED 1S44 BA128 BA154 w 1N4148 v ITT44 U35063/2 / Germanium Gold-Bonded


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PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
2N1907

Abstract: 2n1908 A97T Texas Germanium PW 2N GERMANIUM PNP LOW POWER TRANSISTORS 2NI907 Germanium power Germanium PNP - Low Power Transistors
Text: TYPES 2NI907, 2N1908 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS HIGH-FREQUENCY POWER , ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise , ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS switching characteristics at 25°C case temperature PARAMETER Id , £- - C o lle c t o r - E m itt e r V o lt a g e - v F IG U R E 2 5: These characteristics were measured using pulse techniques. PW - 300 /¿sec, Duty Cydo < 2%. VCE - C o lle c t o r - E m itt e r V


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PDF 2NI907, 2N1908 DC-11 2N1907 A97T Texas Germanium PW 2N GERMANIUM PNP LOW POWER TRANSISTORS 2NI907 Germanium power Germanium PNP - Low Power Transistors
TRANSISTOR 3F z

Abstract: germanium transistor pnp crt 1700 OC 44 germanium transistor pnp germanium transistor mazda 3 TRANSISTOR C-111 Germanium Transistor Germanium power Germanium Amplifier
Text: E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI , Germanium PNP Junction Type TENTATIVE 26* Static Current Amplification (D.C.) *Small Signal Values at Vc=â , . TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS 0.295" Max. 0.285"Min . HH 1 1.2 , XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit , . TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit Ambient


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transistor K52

Abstract: germanium transistor pnp pnp germanium transistor GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS mazda 3 germanium Power Transistor
Text: XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element , TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ CHARACTERISTICS (at 25°C.). Small Signal Values (average , I S W A N MAZDA XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL , OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE Mean Total Base Current at Maximum Power Output


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16C70

Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Text: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea General J16TE , -Stage Thermoelectrically Cooled Ge J16TE1 Series detectors are Judson's large-area Germanium detectors packaged on , J16TE Thermoelectrically Cooled Germanium Detectors Figure 11-1 J16TE1-P6 Figure 11-2 J16TE2 , , J10D J 16, J12TE 2, J1 2T E 3 J12 J12T E 2 Preamplifiers for use with Germanium Detectors judson , -7:16C and PA-7:32C Multi-channel Pream plifier O utput C onnector ITT C annon D C S F -3 7 S - 2


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PDF J16TE J16TE J16TE2 4C-70 16C-70 32C-70 4C-60 16C-60 16C70 J16D thermistor inas detector inas judson PA-100 Germanium itt
2N1038

Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 2N1036 2N2556 ti 2N2553
Text: , 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s : ss 0B Z p m m m * 4 0 -, 60 , , 2N1041 · 2N2552, 2N2553, 2N2554, 2N2555 · 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM , , 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS electrical characteristics at 25°C case , , 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS electrical characteristics at 25aC case , 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS TYPICAL


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PDF 2N1038, 2N1039, 2N1040, 2N1041 2N2552, 2N2553, 2N2554, 2N2555 2N2556, 2N2557, 2N1038 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 2N1036 2N2556 ti 2N2553
transistor kc 2026

Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt
Text: MIL-S-19500/58D 28 Februar 1966 SUPERSEDING MIL-T-195 00/58C 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM , HIGH-POWER TYPE 2N665 This specification is mandatory for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detailed requirements for a high-power, germanium , PNP, Transistor. 1.2 Physical dimensions. See figure 1 , one C 11 JtL 1 C 70 er r *nn a An • 4HU in li IUiU/ 11 IP 1 1 . 1 V n V 1 ITT I.I// 1 107 1.17


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PDF MIL-S-19500/58D MIL-T-195 00/58C 2N665 MIL-S-19500, MIL-S-19500/58D MIL-S-19500 transistor kc 2026 2N665 kc 2026 Germanium itt
TFK 404

Abstract: BCI83L T1S58 transistor bf 175 BCI09 tis62 akai amplifier v744 kd 2060 transistor TFK diode
Text: . diffused power Silicon N.P.N. planar power Silicon P.N.P. planar power Germanium P.N.P. power R & , Collector Current Amps Germanium PNP Power These products cover s large number of requirements where , 1 V 0 .2 5 V E m itt e r C u t o ff hFE cb V C u rre n t Ie b o C u rre


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PDF 20nttc* 10N12* TFK 404 BCI83L T1S58 transistor bf 175 BCI09 tis62 akai amplifier v744 kd 2060 transistor TFK diode
free transistor and ic equivalent data

Abstract: free transistor Germanium Amplifier Circuit diagram germanium transistors NPN silicon germanium k2a2 silicon bipolar transistor low noise amplifier GERMANIUM TRANSISTOR Germanium Amplifier MAX2247
Text: BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Mar 15, 2000 Silicon Germanium , germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects , . Silicon Germanium (SiGe) is the newest innovation for simultaneously improving the power consumption , silicon germanium (SiGe), which features a transition figure (fT) of 35GHz. A typical front-end block diagram (Figure 1) shows the performance possible with Silicon Germanium technology (1.9GHz) for a


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PDF MAX2644: MAX2645: MAX2648: MAX2649: MAX2651: MAX2654: MAX2680: MAX2683: MAX3273: MAX3892: free transistor and ic equivalent data free transistor Germanium Amplifier Circuit diagram germanium transistors NPN silicon germanium k2a2 silicon bipolar transistor low noise amplifier GERMANIUM TRANSISTOR Germanium Amplifier MAX2247
2010 - DTG110B

Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 TO41 2N2081A DTG2400
Text: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V(BR)CEO PD Max , DTG2400M See Index See Index Germanium Germanium See Index See Index Germanium Germanium See Index See Index GE Solid St See Index See Index CentralSemi Germanium Germanium Solid Stlnc See Index See Index Advncd Semi Germanium Semi Inc Germanium See Index See Index Germanium Germanium Germanium Germanium See Index Germanium Solid Stlnc See Index Germanium See Index See Index See Index See Index GE Solid St


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PDF 2N2082 2N2082A DTG2000 MP1550 2N1550A 2N1031 MP1554 MP1558 2N1032 2N3124 DTG110B TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 TO41 2N2081A DTG2400
Not Available

Abstract: No abstract text available
Text: | 4bl3315 DD0Q44fl ^ h */7 | ^ Detectors Doped Germanium and Doped Silicon IR Detectors for Low Background Operation The infrared detection capability of doped germanium and doped silicon , i The doped germanium infrared detectors provide high sensitivity and fast speed of response , from uniform single crystal p-type doped germanium and have a short time constant which enables , . Dewars Gold-doped germanium requires a liquid nitrogen dewar. Models 40742 and 44782 are standard


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PDF 4bl3315 DD0Q44fl 50-ohm
2010 - germanium

Abstract: pnp germanium to36 ASZ1018 2n2063 AD167 TO36 package AD166 2N2063A 2N1666 2N1202
Text: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V(BR)CEO PD Max , Index See Index Germanium See Index Germanium See Index See Index See Index Germanium Germanium Germanium Germanium See Index See Index Germanium Germanium See Index Germanium See Index See Index Germanium See Index Germanium NthAmerSemi See Index See Index See Index See Index Germanium See Index Germanium See Index See Index See Index NthAmerSemi See Index See Index Germanium Germanium Germanium


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PDF 2N2563 2N2567 2N1202 2N1203 2N1044 2N1045 2N553 2N1245 2N1246 2N1971 germanium pnp germanium to36 ASZ1018 2n2063 AD167 TO36 package AD166 2N2063A 2N1666
2010 - ASZ16

Abstract: asz1015 AL103 AD143 2N3611 PNP Germanium germanium ASZ15 MP2062 2SB40 2SB407
Text: POWER GERMANIUM TRANSISTORS Item Number >C Part Number Manufacturer Type Max V(BR , 2N457B 2N5890 2N5894 2N5898 MP3612 2N3612 MP3614 Germanium NthAmerSemi CentralSemi Germanium NthAmerSemi Solid Stlnc CentralSemi Germanium NthAmerSemi CentralSemi Germanium NthAmerSemi See Index See Index Germanium See Index Solid Stlnc Space Power See Index See Index See Index See Index See Index See Index Germanium See Index Germanium See Index See Index Solid Stlnc Germanium See Index See Index See Index See


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PDF ASZ1015 AUY30 AUY28 2SB342 AL102 AL103 ASZ16 AD143 2N3611 PNP Germanium germanium ASZ15 MP2062 2SB40 2SB407
2009 - BGA615L7

Abstract: BGA615 1650M LNA marking R0 LNA marking CODE R0 prepreg GERMANIUM FR4 Prepreg data sheet germanium diode smd FR4 Prepreg for RF PCB
Text: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & , Sheet 3 Rev.1.3, 2007-02-12 Silicon Germanium GPS Low Noise Amplifier BGA615L7 Silicon Germanium GPS Low Noise Amplifier Features · High gain: 18 dB · Low Noise Figure: 0.9 dB · Power off , package · B7HF Silicon Germanium technology · RF output internally matched to 50 · Low external , is as low as 5.6 mA. The BGA615L7 is based upon Infineon Technologies` B7HF Silicon Germanium


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PDF BGA615L7 BGA615 BGA615L7 BGA615 1650M LNA marking R0 LNA marking CODE R0 prepreg GERMANIUM FR4 Prepreg data sheet germanium diode smd FR4 Prepreg for RF PCB
germanium transistor pnp

Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Text: E D I S W A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ GENERAL The , A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE Static Current , XAI02 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS ■0.5  , N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL CIRCUIT , MAZDA XAI02 I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter


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PDF XAI02 germanium transistor pnp Germanium germanium pnp pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
ci 740

Abstract: ci740 germanium transistor pnp XBI03 Lf transistor germanium Power Transistor power germanium transistor pnp transistor lf common collector PNP Germanium power
Text: E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XBI03 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the , CUT DIVISION Issue 2/4 SIEMENS EDISON SWAN LIMITED E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium , DIVISION Issue 2/4 SIEMENS EDISON SWAN LIMITED E D I S W A N MAZDA \ O XBI03 L.F. TRANSISTOR Germanium , SWAN LIMITED E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS


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PDF XBI03 ci 740 ci740 germanium transistor pnp Lf transistor germanium Power Transistor power germanium transistor pnp transistor lf common collector PNP Germanium power
2009 - Not Available

Abstract: No abstract text available
Text: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & , information Data Sheet 3 Rev.1.3, 2007-02-12 Silicon Germanium GPS Low Noise Amplifier BGA615L7 Silicon Germanium GPS Low Noise Amplifier Features • High gain: 18 dB • Low Noise Figure: 0.9 dB â , PG-TSLP-7-1 leadless package • B7HF Silicon Germanium technology • RF output internally matched to , €˜ B7HF Silicon Germanium technology. It operates over a 2.4 V to 3.2 V supply range. Type Package


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PDF BGA615L7 BGA615
Germanium PIN laser diode

Abstract: receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications APD 10gbps 3.3v laser diode stm 64 laser driver, STM-64 bare die Germanium Power Diodes STM-16
Text: Silicon Germanium OC-192/ STM-64 10Gbps P-HBGA92-1, Bare die 3.3V to 5.0V B7HF SiGe Silicon Germanium OC-768 STM-256 40Gbps T.B.D. 5.0V B7HF SiGe Silicon Germanium OC-192/ STM-64 10Gbps P-HBGA92-1, Bare die 3.3V to 5.0V B7HF SiGe Silicon Germanium OC-768/ STM-256 40 Gbps T.B.D. 5.0V B7HF SiGe Silicon Germanium One-ChipTransceiver , Silicon Germanium 3.3V to 5.5V B6HF Si Bipolar Bare Die OC-48 STM-16 2.5Gbps Bare Die


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PDF FOA3251B1 FOA3100xB1 FOA4100xB1 FOA4400xA FOA5100xB1 FOA5400xA 10Gbps OC-192/ STM-64 10Gbps Germanium PIN laser diode receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications APD 10gbps 3.3v laser diode stm 64 laser driver, STM-64 bare die Germanium Power Diodes STM-16
free transistor and ic equivalent data

Abstract: AN697 germanium npn MAX2680 MAX2642 5Ghz lna transistor MAX2640 MAX2338 MAX2323 MAX2247
Text: : silicon germanium , SiGe, rfic, rf design, lna, rfics, rf ics Mar 15, 2000 APPLICATION NOTE 697 Silicon Germanium (SiGe) Technology Enhances Radio Front-End Performance Abstract: This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to , 8QAM. Silicon Germanium (SiGe) is the newest innovation for simultaneously improvingthe power , based on silicon germanium (SiGe), whichfeatures a transition figure (fT) of 35GHz. A typical front-end


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PDF MAX2648: MAX2649: MAX2651: MAX2654: MAX2680: MAX2683: MAX3273: MAX3892: MAX9987: MAX9988: free transistor and ic equivalent data AN697 germanium npn MAX2680 MAX2642 5Ghz lna transistor MAX2640 MAX2338 MAX2323 MAX2247
2010 - MMIC marking code R

Abstract: BGU7003 MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 02 - 22 June 2010 Product , BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC 1.4 Quick , June 2010 2 of 18 BGU7003 NXP Semiconductors Wideband silicon germanium low-noise , BGU7003 NXP Semiconductors Wideband silicon germanium low-noise amplifier MMIC Table 8. ENABLE , Semiconductors Wideband silicon germanium low-noise amplifier MMIC 90° 1.0 +1 135° +0.5 0.8


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PDF BGU7003 BGU7003 OT891 MMIC marking code R MURATA LQW15A Germanium power mmic amplifier marking code l silicon germanium
germanium power devices corporation

Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power GM10HS GM2HS ingaas apd photodetector diode germanium catalog gep800 GM7VHR
Text: Large and Small Area · Wide Performance Range · TE Coolers and Dewars Available Germanium Power , zero bias; shunt resistance values in this catalog are calculated at 10mV reverse bias. Germanium vs , CAPACITANCE (CJ Both Germanium and InGaAs are sensitive to light in the near-infrared region of the spectrum , detectors Package outline drawings 2 3 4 6 6 7 Germanium Power Devices Corporation E S BASIC , ; ` s: Voltage across diode Bias Voltage Output Current Germanium Power Devices Corporation


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PDF GPDOS00004 MIL-45208 MIL-S-19500 MIL-S-19500. MIL-STD-883, germanium power devices corporation GM8HS InGaas PIN photodiode, 1550 NEP Germanium power GM10HS GM2HS ingaas apd photodetector diode germanium catalog gep800 GM7VHR
2009 - SMA MARKING 1475

Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Text: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 - 2 March 2009 Product , / digital cordless applications BGU7003 NXP Semiconductors Wideband silicon germanium low-noise , Semiconductors Wideband silicon germanium low-noise amplifier MMIC 5. Limiting values Table 5. Limiting , silicon germanium low-noise amplifier MMIC Table 8. ENABLE (pin 5) -40 °C Tamb +85 °C VENABLE (V , . 01 - 2 March 2009 4 of 17 BGU7003 NXP Semiconductors Wideband silicon germanium


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PDF BGU7003 BGU7003 OT891 SMA MARKING 1475 MurataGRM1555 mmic marking L MMIC marking code 132 MMIC marking code R
2014 - B7HF200

Abstract: No abstract text available
Text: BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Data Sheet Revision 3.1, 2014-03-25 , or other persons may be endangered. BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC BGT24MR2 Silicon Germanium 24 GHz Twin IQ Receiver MMIC Revision History: 2014-03-25, Revision 3.1 , Silicon Germanium 24 GHz Twin IQ Receiver MMIC Table of Contents Table of Contents Table of Contents , Germanium 24 GHz Twin IQ Receiver MMIC List of Figures List of Figures Figure 1 Figure 2 Figure 3


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PDF BGT24MR2 VQFN32-9) BGT24MR2 VQFN32-9-PO VQFN32-9 VQFN32-9 B7HF200
2012 - T0825

Abstract: No abstract text available
Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0 , health of the user or other persons may be endangered. BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Revision History: 2012-09-19 , Silicon Germanium 24 GHz Transceiver MMIC Table of Contents Table of Contents Table of Contents . . . , Silicon Germanium 24 GHz Transceiver MMIC List of Figures List of Figures Figure 1 Figure 2 Figure


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PDF BGT24MTR12 VQFN32-9) BGT24MTR12 VQFN32-9 VQFN32-9 VQFN32-9-PO T0825
2011 - BFU790F

Abstract: JESD625-A Germanium power
Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 - 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , silicon germanium technology High maximum output power at 1 dB compression 20 dBm at 1.8 GHz 1.3 , , cellular, UMTS BFU790F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 , Semiconductors NPN wideband silicon germanium RF transistor 4. Marking Table 4. Marking Type number


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PDF BFU790F OT343F JESD625-A BFU790F Germanium power
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