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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

Germanium Diode aa116 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Germanium PIN laser diode

Abstract: receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications APD 10gbps 3.3v laser diode stm 64 laser driver, STM-64 bare die Germanium Power Diodes STM-16
Text: Silicon Germanium OC-192/ STM-64 10Gbps P-HBGA92-1, Bare die 3.3V to 5.0V B7HF SiGe Silicon Germanium OC-768 STM-256 40Gbps T.B.D. 5.0V B7HF SiGe Silicon Germanium OC-192/ STM-64 10Gbps P-HBGA92-1, Bare die 3.3V to 5.0V B7HF SiGe Silicon Germanium OC-768/ STM-256 40 Gbps T.B.D. 5.0V B7HF SiGe Silicon Germanium One-ChipTransceiver , Operates with PIN photo diode 9.95-10.7 or APD Gbps, ITU-T · Internal bias generation for PIN photo


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PDF FOA3251B1 FOA3100xB1 FOA4100xB1 FOA4400xA FOA5100xB1 FOA5400xA 10Gbps OC-192/ STM-64 10Gbps Germanium PIN laser diode receiver pin diode for 10Gbps silicon diode and germanium tunable lasers diode applications APD 10gbps 3.3v laser diode stm 64 laser driver, STM-64 bare die Germanium Power Diodes STM-16
to3a

Abstract: 000D1E7 N95 DIODE 1N111 germanium diode N70a 1N62 1N69A diode 1n69 gold bonded germanium diode
Text: D3E D J 117^03 □ □□□□7ci S J Type No. 1N61 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO , C INTERNATIONAL D3E D | □□□□□flo ^ | _Type No. 1N62_ GOLD BONDED GERMANIUM DIODE 6 Lake , QDDDDfll Q J~ "_Type No. 1N63_ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 , _Type No. 1N63A_ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone , BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone (617) 681-0392 TeleFax


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PDF DQDD35S 1N60A 150mA 300nS to3a 000D1E7 N95 DIODE 1N111 germanium diode N70a 1N62 1N69A diode 1n69 gold bonded germanium diode
10 GHz gunn diode

Abstract: backward diode "backward diode" CXY19 impatt diode x band gunn diode gunn effect Gunn Diode AEY17 Gunn Diode diode gunn SA
Text: Impedance (O) AEY17 Germanium bonded backward diode for use at X band SOD-42 a 1 to 18 -53 120* 300 AEY29 AEY29R" Germanium bonded backward diode for use at J band DO-37 j 12 to 18 -53 50t 300 AEY31 AEY31A Subminiature germanium bonded backward diode for use up to J band SOD-SO u 1 to 18 1 to 18 -53 -50 120« 60* 300 300 AEY32 Subminiature germanium bonded backward diode for use up to Q band SOD-50 u 18 to 40 -


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PDF AEY17 OD-42 AEY29 AEY29R" DO-37 AEY31 AEY31A AEY32 OD-50 CXY19 10 GHz gunn diode backward diode "backward diode" impatt diode x band gunn diode gunn effect Gunn Diode AEY17 Gunn Diode diode gunn SA
ua78540

Abstract: MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor scr dc motor forward reverse control tl494 equivalent application SCR scr driving circuit for dc motor MOTOROLA SCR driver EB121
Text: cart controller is shown in Figure 1. Germanium power transistors were used by the authors because of , operation: 1. The faster turn-on time of the SCR (Q9) over that of the germanium transistors shapes the , transistor Q2 obtains reverse bias by means of diode D4. To obtain the 6 V bias, the 36 V string of 6 V , of germanium transistors produces low static loss. However, switching speeds of the germanium , using a parallel connected SCR (across the germanium transistors) the MCR265-4 (55 A rms, 550 A surge).


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PDF EB121/D EB121 ua78540 MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor scr dc motor forward reverse control tl494 equivalent application SCR scr driving circuit for dc motor MOTOROLA SCR driver EB121
2010 - DTG110B

Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 TO41 2N2081A DTG2400
Text: Germanium See Index See Index Germanium Diode Trans Germanium NthAmerSemi Germanium PNP PNP PNP PNP PNP , POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V(BR)CEO PD Max , DTG2400M See Index See Index Germanium Germanium See Index See Index Germanium Germanium See Index See Index GE Solid St See Index See Index CentralSemi Germanium Germanium Solid Stlnc See Index See Index Advncd Semi Germanium Semi Inc Germanium See Index See Index Germanium Germanium Germanium Germanium See


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PDF 2N2082 2N2082A DTG2000 MP1550 2N1550A 2N1031 MP1554 MP1558 2N1032 2N3124 DTG110B TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 TO41 2N2081A DTG2400
1998 - lidar apd model

Abstract: APD, laser, range, finder APD bias gain photodiode pin alpha particles C30902S geiger apd PerkinElmer Avalanche Photodiode germanium diode equivalent Photodiode apd high sensitivity InGaAs apd photodiode
Text: useful gain, M, of at least 100 for silicon APDs, or 10-40 for germanium or InGaAs APDs. In addition , below the breakdown field of the diode . Figure 1 shows the reach-through structure patented by , =100 to 1000 for silicon APDs and is limited to M=30 to 40 for germanium and InGaAs APDs. 3. Selecting , from 300 to 1700 nm. Silicon APDs can be used between 300 to 1100 nm, germanium between 800 and 1600 nm and InGaAs from 900 to 1700 nm. Although significantly more expensive than germanium APDs, InGaAs


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PDF ED-13, ED-0017/03/8, C30902E/S, C30921 lidar apd model APD, laser, range, finder APD bias gain photodiode pin alpha particles C30902S geiger apd PerkinElmer Avalanche Photodiode germanium diode equivalent Photodiode apd high sensitivity InGaAs apd photodiode
T018

Abstract: No abstract text available
Text: OPTO-ELECTRONICS INC 17E D böOSOET 00002Û7 h FAST GERMANIUM PHOTODIODES GD SERIES DESCRIPTION The GD sériés photodiodes are high quality germanium diodes housed in T018 or T05 cans. Low dark , mm thick glass window. The diode is 2.5 mm below the window. A glass lens with a 4 mm diameter and a , beam onto the diode . Two meters of optical fiber. The fiber is high quality multimode 50/125 jum core , in singlemode or multimode fiberoptic systems. ORDERING INFORMATION • The GD séries germanium


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PDF 70x80 100x130 250x250 500x500 GD2000 GD1000 T018
J16-18A-R01M-SC

Abstract: J16-5SP-R02M-HS J16-8SP-R05M J16-5SP-R02M-SC J16-18A-R01M J16-5SP-R03M-HS germanium diode equivalent photodiode germanium photodiode ge J16-18A-R01M-HS
Text: <ß>EOsO JUDSON Germanium Detector Operating Notes 0.8 to 1.8 ¡im General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photongenerated current source with shunt , respectively. Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph S) V -www-» R, a J ■ph - Rs = L = Current generated by incident photons Actual voltage across diode junction Detector junction


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PDF J16TE 303Gb05 J16-18A-R01M-SC J16-5SP-R02M-HS J16-8SP-R05M J16-5SP-R02M-SC J16-18A-R01M J16-5SP-R03M-HS germanium diode equivalent photodiode germanium photodiode ge J16-18A-R01M-HS
NKT677

Abstract: NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
Text: GERMANIUM JUNCTION DIODE Bias Stabiliser* Red or Brown Sleeve Line on sleeve adjacent to anode lead , — AC165 AC154 AC157 AA120 Complementary output Bias compensating diode Complementary , Limiting Resis­ tance VCE(sat)max SO Diode Temperature Coefficient VEB Emitter to Base , polarity. Do connect the replacement transistor or diode the right way round firs t time. Do ensure that , V VF (lF=8-5m A) (IF=1 SD m A) (I f = 8 5mA) *For use in germanium transistor


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PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
Photodiodes Germanium

Abstract: T05 Package T018
Text: OPTO-ELECTRONICS INC 17E D böOSOET 00002Û7 h FAST GERMANIUM PHOTODIODES GD SERIES DESCRIPTION The GD series photodiodes are high quality germanium diodes housed in T018 or T05 cans. Low dark , mm diameter 1.0 mm thick glass window. The diode is 2.5 mm below the window. A glass lens with a 4 mm , convergent beam onto the diode . Two meters of optical fiber. The fiber is high quality multimode 50/125 jum , germanium photodiodes are complete as shipped in a T05 or a T018 can. • The complete units can generally


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PDF 70x80 100x130 250x250 500x500 GD2000 GD1000 Photodiodes Germanium T05 Package T018
sx3704

Abstract: BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
Text: Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , ) Diode CLASSIFIED 1S44 BA128 BA154 w 1N4148 v ITT44 U35063/2 / Germanium Gold-Bonded Diode S ilicon Diode Y933 V D21 D17 Fast S ilicon Diod Germanium Diode HS9078 , ITT2003/XK3030 D26 D19 S ilicon Diode S6M1 Bias Diodi D23 Germanium Diode OA91 i C1129 , . . Base Base Base Base Base Base Base D D D D D A A AF7 Germanium PNf


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PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
2002 - Not Available

Abstract: No abstract text available
Text: ). As an example, a germanium resistance sensor with a specific sensitivity of -2.14 and resistance , CS-501 Specific Sensitivity (S) GR 1 Au-Fe Thermocouple Rh-Fe 0.1 GaAlAs Diode Si Diode RO Pt CLTS 0.01 1 10 100 500 Temperature (K) Figure 1. Absolute values of specific , resistor, CLTS: Vishay Micro-Measurements CLTS-2 metal foil gauge, CS-501: CS501 capacitor, GaAlAs diode : TG-120P gallium-aluminumarsenide @ 10 µA, GR: GR-200A-1000 germanium resistor, Pt: Pt-103 platinum


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germanium photodiode

Abstract: photodiode germanium Ford Aerospace a 6151 germanium diode L4521 Germanium mesa
Text: ~ » v^v^ ^i^Communications Corporation 'à i LËCTRO-O PTI CA L$DEVJC ES GERMANIUM PHOTODIODE , PLATED - KOVAR LEADS .020 DIA CASE (-) DESCRIPTION The L4521 germanium photodiode is designed for , is fabricated in a mesa structure using a proprietary passivation process which results in germanium , accommodate specific applications, germanium photodiodes can be provided with single and multi-element custom , . 20 Cutoff Frequency* ( diode only). 250 Cutoff Frequency* (with 50S2 load) . 50 Light


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PDF L4521 L4521 germanium photodiode photodiode germanium Ford Aerospace a 6151 germanium diode Germanium mesa
DIODE BZW70

Abstract: cqy17 Germanium Diode aa112 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor AA112 germanium diode smd BYT-100
Text: Germanium , low power signal diode (consumer type) Germanium , low power AF transistor (industrial type , numbering U Transistor; power, switching W Surface acoustic wave device X Y Z Diode ; multiplier, e.g. varactor, step recovery Diode ; rectifying, booster Diode ; voltage reference or regulator, transient suppressor diode ; with special third letter. n u m b e r / s p e c ia l t h ir d l e t t e r This type , letter gives information about the material for the active part of the device. A B C Germanium or other


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PDF BZW10-15B. BYT-100 -100R. DIODE BZW70 cqy17 Germanium Diode aa112 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor AA112 germanium diode smd
germanium power devices corporation

Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power GM10HS GM2HS ingaas apd photodetector diode germanium catalog gep800 GM7VHR
Text: ; ` s: Voltage across diode Bias Voltage Output Current Germanium Power Devices Corporation , Large and Small Area · Wide Performance Range · TE Coolers and Dewars Available Germanium Power , zero bias; shunt resistance values in this catalog are calculated at 10mV reverse bias. Germanium vs , CAPACITANCE (CJ Both Germanium and InGaAs are sensitive to light in the near-infrared region of the spectrum , detectors Package outline drawings 2 3 4 6 6 7 Germanium Power Devices Corporation E S BASIC


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PDF GPDOS00004 MIL-45208 MIL-S-19500 MIL-S-19500. MIL-STD-883, germanium power devices corporation GM8HS InGaas PIN photodiode, 1550 NEP Germanium power GM10HS GM2HS ingaas apd photodetector diode germanium catalog gep800 GM7VHR
2011 - diode code m10

Abstract: avalanche photodiodes 1650nm APD 10ghz
Text: InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD M = Length (in , Diode type B = Bracket Type A = None B = Panel Mount D = Board Mount E = Panel Mount (12mm hole , Device Type IN = InGaAs PIN SI = Silicon PIN SA = Silicon APD GE = Germanium PIN GA = Germanium APD 0 = , Diode type AAA = Active Area 055 = 55 microns) 075 = 75 microns 100 = 100 microns 300 = 300 microns


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J16D

Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
Text: / J IO Series General J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a , are described on pages 11-13. Germanium Detector Operating Notes Responsivity A Ge photodiode , Circuit Figure 2-1 Germanium Photodiode Equivalent Circuit 'ph W W W -° R, Figure 2-3 , Actual voltage across diode junction CD = Detector junction capacitance Rd = Detector shunt resistance Rs


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PDF 30BGb05 000DE13 J16TE2 11-mission. 3030L 000D21L, J16D J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
J16-5SP-R02M-SC

Abstract: J16-8SP-R05M GE PHOTODIODE J16P1R10M J16-18A-R01M-SC J16-5SP-R03M-SC J16-5SP-R03M-HS J16-P1-R10M-SC J16-8SP-R05M-SC J16-18A-R01M
Text: Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range. The equivalent circuit for a Germanium photodiode (Fig. 2-1) is a photon-generated current source with , 11-13. Figure 2-1 Germanium Photodiode Equivalent Circuit T - H t - H l Germanium Detector , Ge © Sl I h = Current generated by incident photons VD = Actual voltage across diode , different applications (Fig. 3-5). The "-SC" device is a p-n diode , ideal for low frequency applications and


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PDF 3CI30bD5 D0DDS13 J16TE2 1550nm. 3G30L 000021L. J16-5SP-R02M-SC J16-8SP-R05M GE PHOTODIODE J16P1R10M J16-18A-R01M-SC J16-5SP-R03M-SC J16-5SP-R03M-HS J16-P1-R10M-SC J16-8SP-R05M-SC J16-18A-R01M
1N4502

Abstract: germanium diode diode germanium GERMANIUM Germanium Power Devices "Germanium Diode"
Text: Datasheet 1N4502 central GERMANIUM DIODE Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA JEDEC D0-7 CASE Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4502 type is a Gold Bonded Germanium Diode mounted in a hermetically sealed glass case, designed for general purpose applications. Special devices with a higher breakdown voltage and/or lower leakage limits are available on special order


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PDF 1N4502 1N4502 10mW/10Â 100mA germanium diode diode germanium GERMANIUM Germanium Power Devices "Germanium Diode"
2010 - Q265

Abstract: diode germanium 1n270 1N695 transitron matched diodes transitron 1n648 1N3066 1N270 S555G Q252 transitron diodes
Text: GERMANIUM DIODE TYPES SPECIFICATIONS PER DIODE TRR (ns) - 25°C Match (mV @ m A ) 10 @ 20 5 @ 20 10@20 , MATCHED DIODE QUADS Transitron's efficiency versatility. E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward characteristics. Individual diodes allow the user maximum circuit configurations TABLE I SILICON DIODE TYPES SPECIFICATIONS PER DIODE Quad Type Q250 Q251 Q252 Q253 Q254 Q255 Q256 Q257 25°C Match (mV @ m A | 10@20 5 @ 20 10 @ 2


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PDF 1N485B 1N648 1N914B 1N3066 1N3066 1N270 Q265 diode germanium 1n270 1N695 transitron matched diodes transitron 1n648 S555G Q252 transitron diodes
backward diode

Abstract: germanium rectifier diode "backward diode" diode germanium Q62701-E36 ha494 TU 300 a TU300 GERMANIUM TU 300
Text: TU 300 Germanium backward diode TU 300 is a germanium backward diode with good RF characteristics and a particularly steep forward characteristic. TU 300 is used as rectifier, detector or mixer. (TU 300 was designed to replace TU 1 B). Type Order number TU 300 Q62701-E36 . t 0.06tHicK cathode -H03.1so.iK M L-l;-ri -10 min. Weight approx. 1 g Dimensions in mm Maximum ratings Maximum reverse voltage Peak current Peak current Storage temperature TU 300 "RM approx. 0.5 V 'bm 1 mA ^FM 5 mA Ts


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PDF Q62701-E36 06tHicK backward diode germanium rectifier diode "backward diode" diode germanium Q62701-E36 ha494 TU 300 a TU300 GERMANIUM TU 300
Emcore solar cell

Abstract: EDWA InGaAs array 1550nm 100C multi-junction "solar cell" photoluminescence illumination
Text: temperatures ranging from 5°C to 100°C. The InGaP, InGaAs, and germanium temperature coefficients are 0.011 , filtered through a single grating monochromator with a 2nm (InGaP and InGaAs subcells) or 3nm ( germanium , . The resolution of measurements made on the bottom ( germanium ) subcell was limited to 3nm by long , bias and a curve tracer. Only solar cells with near-ideal diode behavior and a high effective shunt , ternary bandgap data from Germanium bottom subcell Figure 8 shows the quantum efficiency of the


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PDF R123-181. Emcore solar cell EDWA InGaAs array 1550nm 100C multi-junction "solar cell" photoluminescence illumination
linear array photodiode element

Abstract: Photodiode Array 32 element germanium photodiode PIN photodiode ge Photodiode Array linear Ge dual photodiode GE PHOTODIODE photodiode linear array photodiode germanium germanium
Text: E Ê & G JUDSON 31E D ■303Db05 0000222 S ■JUD -^- IH CD Parallel Output t-w-ss JlDr Series Germanium Arrays 0.8 to 1.8 jam Description Standard packaging and element configurations result in low cost and quick delivery for J16P Series high-quality Germanium photodiode arrays. The 16 , "SC" Germanium material option is available for either array, offering the lowest noise and best , Analysis of: - Protein - Blood Samples - Foodstuffs • Fiber Optics: - Far-Field Laser Diode Pattern


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PDF 303Db05 16-element 32-element 30QHz J16P-40P- 500Ux1M 500Ux1 linear array photodiode element Photodiode Array 32 element germanium photodiode PIN photodiode ge Photodiode Array linear Ge dual photodiode GE PHOTODIODE photodiode linear array photodiode germanium germanium
photodiode array 1550 nm

Abstract: Photodiode Array 32 element
Text: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear arrays respond to near-infrared radiation from 800 to 1800 nm. The high-impedance "SC" Germanium material option is available , - Blood Samples - Agricultural Products · Fiber Optics: - Far-Field Laser Diode Pattern Analysis -


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PDF 16-element 32-element 1550-nm J16P-40P-S01 16E-SC J16P-40P-500Ux1M 32E-SC 3030fc photodiode array 1550 nm Photodiode Array 32 element
1997 - BPW50

Abstract: tda1000 cqy17 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR 74LS00A GaAs tunnel diode BPW50-9 BD232 DIODE BZW70
Text: third letter" Germanium , low power signal diode (consumer type) ACY32 Germanium , low power AF , Basic type number W Surface acoustic wave device Transistor; power, switching X Diode ; multiplier, e.g. varactor, step recovery Y Diode ; rectifying, booster Z This type designation , , semiconductor chips and Darlington transistors. Diode ; voltage reference or regulator, transient suppressor diode ; with special third letter. FIRST LETTER SERIAL NUMBER/SPECIAL THIRD LETTER The first


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PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 cqy17 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR 74LS00A GaAs tunnel diode BPW50-9 BD232 DIODE BZW70
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