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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Gan hemt transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - InP transistor HEMT

Abstract: Class E amplifier GaN amplifier inp hemt power amplifier pHEMT transistor visitor Gan hemt transistor varian NONLINEAR MODEL LDMOS
Text: frequency range. A Class E amplifier with a similar GaN HEMT transistor from Cree has been demonstrated to , GaN HEMT transistor . II. DESIGN The GaN HEMT devices on a SiC substrate used in this amplifier were , field-plated GaN HEMT transistor of the same gate periphery and pad layout from Cree. No major modifications , 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F , , IEEE Abstract-A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT


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2006 - Gan hemt transistor

Abstract: GaN amplifier class d amplifier theory nokia rf power amplifier transistor Gan transistor class e phemt gan cree gan hybrid
Text: , and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an , range. A Class E amplifier with the same GaN HEMT transistor has been demonstrated to have 85% PAE and , the same transistor . This paper demonstrates a successful Class F amplifier design using a GaN HEMT , A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE David Schmelzer, Student Member, IEEE, and , Class F, Inverse F, GaN HEMT operating frequency of 2 GHz. To the authors' knowledge, there has not


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2009 - transistor c3909

Abstract: pt 2358 Voltmeter transistor DB p16 of38dBm Gan hemt transistor x band CGH40025F ID4002 C2358 research paper on voltmeter
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New , Cree CGH40025F GaN HEMT transistor . This device operates from a nominal 28 volt rail. The transistor , the new self-heating feature of Cree's large-signal GaN HEMT models to calculate transistor , Cree's GaN HEMT large-signal models automatically effects both DC and RF parameters as a function , voltage. Even though GaN /AlGaN on SiC substrates have high thermal conductivity, it is necessary to be


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PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter transistor DB p16 of38dBm Gan hemt transistor x band CGH40025F ID4002 C2358 research paper on voltmeter
2008 - Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications

Abstract: CGH55030 CGH55030-TB GaN Bias 25 watt Tower Mounted Amplifiers toshiba transistors catalog MICROWAVE TRANSISTOR rogers RO4350 CGH55015-TB
Text: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J , power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the , resonates in-band, to short out the damping resistor that is included for low frequency stability. GaN HEMT , CGH55030-TB amplifier circuits with GaN HEMT devices IV. MEASURED CIRCUIT PERFORMANCE Both devices were , signal performance of the CGH55015-TB and CGH55030-TB amplifier circuits with GaN HEMT devices Figure


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PDF 5030-TB Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications CGH55030 CGH55030-TB GaN Bias 25 watt Tower Mounted Amplifiers toshiba transistors catalog MICROWAVE TRANSISTOR rogers RO4350 CGH55015-TB
2009 - transistor p98

Abstract: P99 transistor p88 transistor 100 p38 transistor transistor nc p79 Gan hemt transistor transistor be p88 WR35 p115 1/SMD bm p57
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New , , 2 to 6 GHz, power amplifier utilizing a Cree CGH40025F GaN HEMT transistor . This device operates , demonstration of how to use the self-heating feature of Cree's large-signal GaN HEMT models to calculate , . Even though GaN /AlGaN on SiC substrates have high thermal conductivity it is necessary to be aware of , efficiencies can vary considerably as a function of frequency. A new self-heating feature in Cree's GaN


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PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor p88 transistor 100 p38 transistor transistor nc p79 Gan hemt transistor transistor be p88 WR35 p115 1/SMD bm p57
ofdm predistortion

Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion CGH25120F-TB
Text: efficient GaN HEMT microwave transistor for generalpurpose military and industrial applications such as , GaN HEMT transistor based high power amplifiers. MICROWAVE ENGINEERING EUROPE Free subscription , May 2009 Short range wireless (UWB) GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride ( GaN ) HEMT based power


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2008 - GaN ADS

Abstract: LDMOS 3RD Rail Engineering
Text: achieved at 0.9 and 2.1GHz for a wide band-gap gallium nitride ( GaN ) HEMT transistor and 12W fundamental , knee-walkout effect [2-3]. In this study a 10W GaN HEMT was used. Measurements were carried out at two , planes for 28V drain voltage at 0.9GHz and 2.1GHz. III. GAN HEMT IN INVERSE CLASS-F MODE A. Inverse , purpose the drain bias voltage was increased above 28V to 35 and 40V, respectively. The same GaN HEMT , with the very low knee voltage, inherent with this GaN HEMT device technology, offers the possibility


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2009 - GaN ADS

Abstract: power transistor gan s-band CGH40045 simple circuit diagram of samsung mobile with int Mobile WiMAX abstract 100w amp schematic diagram power amplifier classe d schematic diagram GaN amplifier 100W maek multi 9
Text: Raymond S. Pengelly of Cree Inc. for supplying the GaN HEMT transistor samples used in this study. R , proposed design concept, a PA is implemented using 45-W GaN HEMT device at 2.655 GHz. The designed PA has , . Compared to comparable high-power PAs using a packaged GaN HEMT , operating at the frequency of 2 GHz­3 GHz , K. Joshin, "Highpower and high-efficiency AlGaN/ GaN HEMT operated at 50 V drain bias voltage," in , . Shealy, "High power, high efficiency, AlGaN/ GaN HEMT technology for wireless base station applications,"


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2009 - STR W 5456 A

Abstract: CGH40010 Large Signal Model TDA7000 CGH40010 TDA7000 equivalent MTT-16 TEA5768HL LMV552 IMS2009 Gan hemt transistor
Text: chosen a gallium nitride ( GaN ) high-electron-mobility transistor ( HEMT ) from Cree because the device , and Tom Dekker of Cree Inc. for supplying the GaN HEMT transistor samples. References [1] J , : A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency," IEEE Microwave Mag , transistor , but the matching topology of the PA should be easily realizable [4]­[6]. The potential of , load impedance considering the knee region of the transistor , can generate high efficiency even in the


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PDF permission2009the STR W 5456 A CGH40010 Large Signal Model TDA7000 CGH40010 TDA7000 equivalent MTT-16 TEA5768HL LMV552 IMS2009 Gan hemt transistor
2013 - transistor GaN

Abstract: No abstract text available
Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 (Flanged) ï‚·ï€ GaN Depletion-Mode HEMT Microwave Transistor , -000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Absolute , / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W , / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W


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PDF MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-01000X transistor GaN
2011 - MAGX-003135-120L00

Abstract: 003135 EAR99
Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak


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PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 003135
2011 - HEMT 36 ghz transistor

Abstract: No abstract text available
Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Features · · · · · · · · GaN depletion mode HEMT microwave transistor Common source , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , . MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak


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PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 HEMT 36 ghz transistor
Not Available

Abstract: No abstract text available
Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , -003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 , -003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 , information contained herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak


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PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00
2013 - Not Available

Abstract: No abstract text available
Text: MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10 , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse , : 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse


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PDF MAGX-000035-045000 DC-3500 MAGX-000035-045000
2014 - Not Available

Abstract: No abstract text available
Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse , : 81.44.844.8298 MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev


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PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00
2013 - Not Available

Abstract: No abstract text available
Text: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse , : 81.44.844.8298 MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev


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PDF MAGX-001090-600L00 MAGX-001090-600L0S MAGX-001090-600L00
2013 - Not Available

Abstract: No abstract text available
Text: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor , -001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V1 , : 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor


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PDF MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-500L00 GX1214-500LS
2007 - GaN ADS

Abstract: CGH40010 Large Signal Model CGH40010 AlGaN/GaN HEMTs CGH40010 ads class d amplifier theory transistor 40361 GaN amplifier class E power amplifier Class E amplifier
Text: assuming that the transistor is an ideal current source. Among the many different device types, GaN HEMT , A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun , csun@calpoly.edu, 805-756-2004 Abstract-A class B and a class F power amplifier are described using a GaN HEMT , Terms-Power Amplifier, High Power, High Efficiency, GaN HEMT , Power Added Efficiency. I. INTRODUCTION , efficiency of 100% can be achieved. B. GaN HEMT The efficiency of the amplifier is limited by the


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Not Available

Abstract: No abstract text available
Text: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features        GaN depletion mode HEMT microwave transistor , ) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor , herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz , ) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor


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PDF MAGX-001220-100L00
Not Available

Abstract: No abstract text available
Text: MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse , notice. MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs , notice. MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs , herein without notice. MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak , -001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty


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PDF MAGX-001214-250L00 MAGX-001214-250L00
2013 - Not Available

Abstract: No abstract text available
Text: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor , -001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse , -001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V2 , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor


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PDF MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-500L00 MAGX-002114-500L0S GX1214-500LS
2014 - Not Available

Abstract: No abstract text available
Text: MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Features Rev. V1 MAGX-001214-650L00  GaN on SiC Depletion-Mode Transistor , -001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V1 , ://www.macomtech.com/content/customersupport Rev. V1 MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor , gold-metalized matched Gallium Nitride ( GaN ) on Silicon Carbide (SiC) RF power transistor optimized for pulsed


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PDF MAGX-001214-650L00 MAGX-001214-650L00
2014 - Not Available

Abstract: No abstract text available
Text: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs , MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse , -003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev , -003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev , -003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev


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PDF MAGX-003135-120L00 EAR99 MAGX-003135-120L00
Not Available

Abstract: No abstract text available
Text: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse , herein without notice. MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak , -000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production , information contained herein without notice. MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor , -000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production


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PDF MAGX-000912-250L00 MAGX-000912-250L00
2011 - MAGX-003135-030L00

Abstract: No abstract text available
Text: MAGX-003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10 , herein without notice. MAGX-003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak , -003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle Production , herein without notice. MAGX-003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak , herein without notice. MAGX-003135-030L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak


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PDF MAGX-003135-030L00 500us MAGX-003135-030L00
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