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Part Manufacturer Description Datasheet Download Buy Part
LTC1864LDICE#PBF Linear Technology IC 1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, UUC8, DICE, Analog to Digital Converter
LTC1864LDICE Linear Technology IC 1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, UUC8, DICE, Analog to Digital Converter
RH1085MKDICE Linear Technology IC VREG ADJUSTABLE POSITIVE LDO REGULATOR, 1.5 V DROPOUT, UUC3, DICE-3, Adjustable Positive Single Output LDO Regulator
LTC1409DWF Linear Technology IC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, UUC28, 90 X 155 MM, WAFER-28, Analog to Digital Converter
LTC1409DWF#PBF Linear Technology IC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, UUC28, 90 X 155 MM, WAFER-28, Analog to Digital Converter
LTC1064-7MJ#PBF Linear Technology IC SWITCHED CAPACITOR FILTER, BESSEL, LOWPASS, CDIP14, LEAD FREE, CERDIP-14, Active Filter

GaAs wafer dicing Chip free Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
water jet cutting machine control schematic

Abstract:
Text: chip cut from glass wafer 5.2 GaAs wafers Here we give some examples of using stealth dicing on , frequency ICs. Photo 7 shows results of a GaAs wafer cut by stealth dicing . Chip size: 0.5mm × 0.5mm , certain cases Possible High-speed ultra-thin wafer dicing Might be possible in certain cases Chip , important technical advantage is the chip yield obtained from one wafer . Stealth dicing is a cleaving , consider the chip edge straightness during wafer separation, which is usually 2 µm to 3 µm, the dicing


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PDF TLAS9005E01 water jet cutting machine control schematic sic wafer 100 mm silicon mems microphone GaAs wafer dicing Chip free UCHIYA mems microphone DSASW005159 TLASC0022EA MEMS KR10
Revalpha

Abstract:
Text: from the wafer / carrier demount through dicing steps without significant breakage presented a , prevent breakage from the thin wafer / carrier de-mount through the dicing steps. The additional support , chip technology for GaAs MMICs.21-25 Flip chip is an alternative technology to through substrate vias.2 However, flip chip has been slow to gain wide acceptance with GaAs devices. One reason for this may be the capital outlay required for new equipment needed for wafer bumping and flip chip die bonding to


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2014 - TLASC0022EA

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Text: width One important technical advantage is the chip yield obtained from one wafer . Stealth dicing is a , calculation are a wafer diameter of 152 mm, a chip size of 2 mm × 2 mm and a conventional blade dicing street width of 80 µm. The increased chip yield per wafer from shrinking the dicing street width was , sections or curves. Stealth dicing also allows improving the chip yield per wafer by arranging chips in , results from stealth dicing on a wafer with different chip sizes in Figure 11. Only 3 locations of the T


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PDF TLAS9005E04 TLASC0022EA
Not Available

Abstract:
Text: : 978-656-2523, email: foxr@tycoelectronics.com ABSTRACT A strong wafer dicing operation is vital to the manufacturing process. At the dicing stage the wafer has the highest value. Everyone is aware of the wafer and , . Unfortunately, the dicing process is not trivial with GaAs . Because it is so fragile, GaAs is very sensitive , the wafer . For the final elimination of the chipping problem, the design of the dicing tool must be , increase for scribing was also dramatic. The dicing time for an average wafer was reduced from 52 minutes


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Not Available

Abstract:
Text: Packages for diverse needs Flip chip bonding Dicing Module products Analysis 3 MEMS technology 3-1 , technical problems in the wafer dicing process that cuts wafers into chips. There are two dicing , . Blade dicing Blade dicing uses a diamond blade that mechanically cuts a wafer into chips. Besides , oscillate in the air. Stealth dicing Stealth dicing irradiates a laser beam on a wafer to form , photodiode and bipolar high-speed signal processing circuit onto the same chip . The image sensor process


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2001 - TriQuint

Abstract:
Text: Training · Prototype Wafer Option: Customer-owned masks, two wafers delivered with thinning, and dicing , mm wafer fab Wafer thinning Wafer backside metallization Wafer dicing Substrate vias DC die sort , Foundry Products and Services Triquint Foundry TriQuint is the premier GaAs foundry in the , successfully produce custom GaAs Integrated Circuits in production quantities. As a merchant foundry, TriQuint , wafer fabrication, PCM testing, device testing and sorting, and plasticpackaging of parts. In all cases


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PDF 25-microngate TriQuint MESFET Ku-BAND
2013 - Not Available

Abstract:
Text: © 2013 OMMIC MEMS-4-MMIC (FP7 ICT STREP) 2008-2012 Single chip protection All wafer protection , Wafer Dicing April 2013 • The D01PH process is a power process for applications up to 50 GHz , step necessary. MEMS release Wafer Dicing Wafers cannot be diced after MEMS release !! Wafer , contact opening On Wafer Measurements Optional Support Wafer Removal Wafer Dicing • The , © 2013 OMMIC GaAs RF-MEMS based active MMICs FOI/IMST co-designed SP4T switched LNA ( chip


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PDF ED02AH D01PH D01MH D007IH 100Hz
bolometer detector

Abstract:
Text: emission SEM Checks contamination elements on wafer Analyzes cross section of chip 9 Assembly , interior of the wafer . Chips are bonded to lead frames. Gold bump forming Chip size package Gold , UV-A Semiconductor GaAs Si InGaAs band gap energy HgCdTe InAs PbS Incandescent lamp , semiconductors made from multiple elements, such as InGaAs (indium gallium arsenide) and GaAs (gallium arsenide , P-type semiconductors. In the GaAs semiconductor, the gallium (Ga) contains three outermost electrons


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2015 - 500/250/arc xenon flash lamps

Abstract:
Text: analysis equipment Wafer dicing technology Biotechnology Flow cytometers Confocal laser microscopes , ) Stealth Dicing Technology 16 S Spot Light Sources LIGHTNINGCURE LC8 16 UV-LED Light Sources , photocathodes ( GaAs , GaAsP). High Sensitivity Side-on PMTs High sensitivity side-on PMTs were developed to , ) · High UV intensity (mercury-xenon lamps) Applications Semiconductor wafer surface inspection , · Instantaneously high peak output · High stability · Long life Semiconductor wafer surface inspection


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PDF OTH0016E06 500/250/arc xenon flash lamps
2000 - INCOMING RAW MATERIAL INSPECTION procedure

Abstract:
Text: QUALITY ASSURANCE SYSTEM Process Check Item Wafer Wafer Process Wafer Test (100%) External Visual External visual( wafer ) Dicing Ag paste Electrical characteristics Depth of dicing , Electrical Resistively of pure water Read flame QC test Die bonding External visual ( chip ) Temperature Au wire QC test Wire bonding External visual, Dicing adhesive strength Temperature, US , Mass Production Transfer Production Planning Mass-Production Wafer Process Wafer Process


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2005 - J-STD-012

Abstract:
Text: gallium arsenide ( GaAs ) wafer scale package, the WaferCap chip scale package, that can provide , wafer-level chip scale packaging (WLCSP), essentially consists of extending the wafer fabrication processes to include packaging. This contrasts with the common approach of dicing a wafer into individual die , . The base GaAs wafer is fabricated using standard processes. The backside vias and I/O pads serve as , shows a 6-inch capped GaAs wafer , the die sawing process, as well as a bottom view of the 0402 package


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PDF J-STD-012 VMMK-1225 AV02-1238EN 1218 footprint IPC GaAs wafer dicing Chip free VMMK-1218 zener wafer
agilent pHEMT transistor

Abstract:
Text: making 100-mm wafer fab Wafer thinning Wafer dicing Substrate vias DC die-sort testing RF die-sort , Nitride for capacitor Nitride First metal, 0.75 µm Active region GaAs resistor Semi-insulating GaAs substrate Via under cap 0.25-µm 2MI Cross Section · · · · · · · · · · · · , passives MIM capacitors TaN resistors GaAs resistors 2 metal layers Air bridges Substrate vias , through 50 GHz. Passives include 2 thickmetal interconnect layers, precision TaN resistors, GaAs


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PDF 100-mm agilent pHEMT transistor agilent ads AGC Amplifiers analog phase shifters chip digital phase shifters GaAs wafer High Power Microwave Device microwave office phemt
2003 - GMOY6178

Abstract:
Text: Trennverfahren Dicing Sägen Sawing Verbindung Chip - Träger Die bonding Kleben Epoxy bonding 1 , visual inspection of chip backside is performed by eye for 100% of the area of each wafer . If decisions , GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode (950 nm , power: 15 mW @ 100 mA in TOPLED® package. · Chip size 300 x 300 µm2 · Peak wavelength: 950 nm · Very highly efficient GaAs LED · Good linearity (Ie = f [IF]) at high currents · DC or pulsed operations are


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2003 - optokoppler

Abstract:
Text: visual inspection of chip backside is performed by eye for 100% of the area of each wafer . If decisions , GaAs-Infrarot-Lumineszenzdiode (950 nm, 200 µm Kantenlänge) GaAs Infrared Emitting Diode (950 nm , Zuverlässigkeit 2 · · · · · · Chip size 200 x 200 µm2 Peak wavelength: 950 nm Very highly efficient GaAs LED Good linearity (Ie = f [IF]) at high currents DC or pulsed operations are possible High , technology Alarm and safety equipment IR free air transmission Typ Type Bestellnummer Ordering Code


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PDF 1235B 1235C optokoppler GaAs wafer dicing Chip free
2003 - "Infrared LED" 880 nm Pulsed Forward Current

Abstract:
Text: AuGe-Eutectics Trennverfahren Dicing Sägen Sawing Verbindung Chip - Träger Die bonding Legieren , GaAs-Infrarot-Lumineszenzdiode (950 nm, 250 µm Kantenlänge) GaAs Infrared Emitting Diode (950 nm , Zuverlässigkeit Hohe Impulsbelastbarkeit 2 · · · · · · · Chip size 250 x 250 µm2 Peak wavelength: 950 nm Very highly efficient GaAs LED Good linearity (Ie = f [IF]) at high currents DC or pulsed , technology Sensor technology Alarm and safety equipment IR free air transmission Typ Type


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PDF 0235F "Infrared LED" 880 nm Pulsed Forward Current GMOY6177
2002 - INCOMING RAW MATERIAL INSPECTION procedure

Abstract:
Text: ASSURANCE SYSTEM Process Check Item Wafer Wafer Process Wafer Test (100%) External Visual External visual( wafer ) Dicing Ag paste Electrical characteristics Depth of dicing , Electrical Resistivity of pure water Read flame QC test External visual ( chip ) Temperature Die bonding Au , Transfer Production Planning Mass-Production Wafer Process Wafer Process Receiving , the reliability target. Table1 (BIPOLAR, C-MOS, GaAs ), Table2 (Precondition BIPOLAR, C-MOS, GaAs


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GaAs wafer dicing Chip free

Abstract:
Text: · · Chip size 250 x 250 µm2 Peak wavelength of 950 nm Very highly efficient GaAs LED Good , GaAs-IR-Lumineszenzdiode (950 nm) GaAs Infrared Emitter (950 nm) F 0235D Wesentliche Merkmale , technology Alarm and safety equipment IR free air transmission Coin counters Typ Type Bestellnummer Ordering Code Gehäuse Package F 0235D on request Infrarot emittierender Chip , Oberseite , . Einheit Unit max. Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W


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PDF 0235D GaAs wafer dicing Chip free GMOY6076 osram topled
osram topled

Abstract:
Text: Goldlegierung Gold alloy Trennverfahren Dicing Sägen Sawing Verbindung Chip - Träger Die bonding , GaAs-IR-Lumineszenzdiode (950 nm) GaAs Infrared Emitter (950 nm) F 0094U F 0094V Wesentliche , Zuverlässigkeit Hohe Impulsbelastbarkeit 2 · · · · · · Chip size 300 x 300 µm2 Very highly efficient GaAs LED Good linearity (Ie = f [IF]) at high currents DC or pulsed operations are possible High , Sensor technology Alarm and safety equipment IR free air transmission Typ Type Bestellnummer


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PDF 0094U osram topled GMOY6080
2004 - pe4261

Abstract:
Text: : Standard Die Carrier Packages (waffle pack) and dice on Film Frames. Wafer Mount/ Dicing In preparation for dicing , wafers are bumped, thinned and polished and 100% electrically probed prior to mounting on film , Advance Information PE4261 Flip Chip Product Description The PE4261 SP4T RF CMOS Flip Chip , manufactured in Peregrine's patented Ultra Thin Silicon (UTSi) CMOS process, offering the performance of GaAs , Harmonics · TX ­ RX Isolation · IDD supply current · Control pin leakages Wafer and Die Packaging Peregrine


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PDF PE4261
2005 - Not Available

Abstract:
Text: Electronic Wafer Map 100% Visual Inspection Carrier Loading Wafer Mount/ Dicing In preparation for , Preliminary Specification PE4261 Flip Chip SP4T UltraCMOSTM 2.6 V Switch Product Description The PE4261 SP4T RF CMOS Flip Chip Switch is designed specifically to address the needs of the antenna , (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional , IDD supply current Control pin leakages Figure 10. Wafer on Film Frame Wafer and Die Packaging


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PDF PE4261
2013 - Not Available

Abstract:
Text: ), wafer dicing , die sorting, visual inspection, picking and packaging. This comprehensive range of , performances on a single chip for compact systems with an attractive entry price. PPH25X high power GaAs , GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven , portfolio of fully tested, high-performance and reliable GaAs processes for MMIC design and production. Our , passive process on GaAs including: • MIM capacitors • Inductors • Metallic resistors It allows


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PDF TS16949.
2002 - F 1235A

Abstract:
Text: GaAs-Infrarot-Lumineszenzdiode (950 nm, 200 µm Kantenlänge) GaAs Infrared Emitting Diode (950 nm , Zuverlässigkeit · Typ. total radiant power: 10 mW @ 100 mA in TOPLED® package · Chip size 200 x 200 µm2 · Peak wavelength of 950 nm · Very highly efficient GaAs LED · DC or pulsed operations are possible · , Alarm and safety equipment IR free air transmission Typ Type Bestellnummer Ordering Code Gehäuse Package F 1235A Q 67220-C1274 Infrarot emittierender Chip , Oberseite Anodenanschluß


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2002 - F 0094U

Abstract:
Text: power: 15 mW @ 100 mA in TOPLED® package · Chip size 300 x 300 µm2 · Very highly efficient GaAs LED , GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Light Emitting Diode , Sensor technology Alarm and safety equipment IR free air transmission Typ Type Bestellnummer Ordering Code Gehäuse Package F 0094U on request Infrarot emittierender Chip , Oberseite , 0094V Q67220-C1268 Infrarot emittierender Chip , Oberseite Anodenanschluß Infrared emitting die


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PDF 0094U F 0094U
2002 - OPTOKOPPLER

Abstract:
Text: Trennverfahren Dicing Sägen Sawing Verbindung Chip - Träger Die bonding Legieren Eutectic bonding , GaAs-Infrarot-Lumineszenzdiode (950 nm, 250 µm Kantenlänge) GaAs Infrared Emitting Diode (950 nm , radiant power: 13 mW @ 100 mA in TOPLED® package. · Chip size 250 x 250 µm2 · Peak wavelength of 950 nm · Very highly efficient GaAs LED · Good linearity (Ie = f [IF]) at high currents · DC or pulsed , technology Alarm and safety equipment IR free air transmission Optocoupler Typ Type Bestellnummer


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PDF 0235D OPTOKOPPLER
640 t fet

Abstract:
Text: · · · · Mask making Wafer thinning Wafer dicing Substrate vias DC die-sort testing RF , ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE Features · · · · · · · , -µm diodes High-Q passives 3 MIM capacitance densities TaN resistors GaAs resistors High-density , interconnect layers, precision TaN resistors, GaAs resistors, through-substrate vias and 3 MIM capacitance , vias TaN resistors sheet resistance GaAs resistors sheet resistance Vias Substrate thickness


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