The Datasheet Archive

Top Results (4)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
ADH554-701LH5 ADH554-701LH5 ECAD Model Analog Devices Inc Aerospace GaAs Fundamental Mixer, 11 GHz - 18 GHz
ADH451-701LH5 ADH451-701LH5 ECAD Model Analog Devices Inc Aerospace GaAs PHEMT Medium Power Amplifier, 5 GHz - 18 GHz
HMC1055LP2CETR HMC1055LP2CETR ECAD Model Analog Devices Inc 0.5 GHz to 4.0 GHz, GaAs, SPST Switch
EVAL01-HMC1055LP2C EVAL01-HMC1055LP2C ECAD Model Analog Devices Inc 0.5 GHz to 4.0 GHz, GaAs, SPST Switch

GaAs MESFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
ne71084

Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Text: . 1-9 General Purpose Dual-Gate GaAs MESFET . 1-13 General Purpose Dual-Gate GaAs MESFET , . 1-45 Low Noise Ku-K Band GaAs MESFET - (Hi Rel Application O nly). 1-49 Low Noise Ku-K Band GaAs MESFET - (Hi Rel Application O nly). 1-49 Low Noise Ku-K Band GaAs MESFET


OCR Scan
PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
752 J 1600 V CAPACITOR

Abstract: RF MESFET S parameters MESFET S parameter network resistor P0* RF SOT89 752 C 1600 V CAPACITOR
Text: TRF7000 POWER GaAs MESFET SLWSQ27-JULY 1996 3.6-V and 4.8-V Operating Voltage for AMPS/NADC , Incorporated 7-47 fi^blTZM 0102T3E 13fl TRF7000 POWER GaAs MESFET slws027 - july 1986 absolute maximum , 074 ■TRF7000 POWER GaAs MESFET _ SLWS027 - JULY 1996 TYPICAL CHARACTERISTICS POWER DERATING , filib].724 0102^34 TOD ■TRF7000 POWER GaAs MESFET SLWS027-JULY 1996 TYPICAL CHARACTERISTICS E , 75265 ■8^1724 0102=135 ^47 TRF7000 POWER GaAs MESFET SLWS027-JULY 1996 TYPICAL CHARACTERISTICS


OCR Scan
PDF TRF7000 SLWSQ27-JULY OT-89 descripRF7000 SLWS027-JULY 752 J 1600 V CAPACITOR RF MESFET S parameters MESFET S parameter network resistor P0* RF SOT89 752 C 1600 V CAPACITOR
2014 - MESFET Application

Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Features , HMC637LP5(E) is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and 6 GHz. The , .1213 GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Gain & Return Loss Gain vs. Temperature 20 , .1213 GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz P1dB vs. Temperature Psat vs. Temperature 30 , : 978-250-3343 or apps@hittite.com 10 HMC637LP5/637LP5E v03.1213 GaAs MESFET MMIC 1 WATT Power


Original
PDF HMC637LP5/637LP5E HMC637LP5 25mm2 MESFET Application
the working of IC 4047

Abstract: IC 4047 working ic 4047 IC 4047 BE data sheet of IC 4047 RF MESFET S parameters pindiode switch
Text: . GaAs MESFET devices. This Designers of traditional wireline systems are difference shows up also , ), the resulting expression gives ed to PIN and GaAs MESFET semiconductor technologies. This category , diode and voltage + cos 1 + 2 t + cos 1 ­ 2 t controlled for a GaAs MESFET . If two sinusoidal , resistance variation of both the PIN diode and GaAs MESFET is nonlinear, therefore, the output response for , , or distortion, produced. Expressions for distortion in both silicon PIN diode and GaAs MESFET


Original
PDF
MESFET Application

Abstract: No abstract text available
Text: HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical , Description The HMC637LP5(E) is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and , apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Gain & , : Phone: 978-250-3343 or apps@hittite.com 9-2 HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 , .0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd


Original
PDF HMC637LP5 637LP5E 25mm2 MESFET Application
2010 - Not Available

Abstract: No abstract text available
Text: HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Features , Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 , - SMT HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Psat , .0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Supply Current vs. Vdd Vdd (V) 11.5 12.0 , Application Support: Phone: 978-250-3343 or apps@hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET


Original
PDF HMC637LP5 637LP5E 25mm2
Not Available

Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Features , HMC637LP5(E) is a GaAs MMIC MESFET Distributed Power Amplifier which operates between DC and 6 GHz. The , Order On-line at www.hittite.com HMC637LP5/637LP5E v03.1213 GAAS MESFET MMIC 1 WATT Power , /637LP5E v03.1213 GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz P1dB vs. Temperature Psat vs , /637LP5E v03.1213 GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Supply Current vs. Vdd


Original
PDF HMC637LP5/637LP5E HMC637LP5 25mm2
2009 - HMC637LP5E

Abstract: HMC637LP5 GaAs MESFET amplifier with high input impedance
Text: HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical , www.hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Gain & , POWER AMPLIFIERS - SMT HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC , : 978-250-3373 Order On-line at www.hittite.com HMC637LP5 / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT , / 637LP5E v02.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Outline Drawing 11 LINEAR &


Original
PDF HMC637LP5 637LP5E 25mm2 HMC637LP5E GaAs MESFET amplifier with high input impedance
PE42552

Abstract: 42552 multigate FETs SPDT FETs SPDT stack 3 pins spdt push switch rf mems switch signal path designer
Text: ) PE42552 Final settling Time = 13uS GaAs MESFET RF Switching Time for 0.05dB final settling Overshoot = 1.03dB 0.05dB error (0.04dB) final settling (-1.9dBm) GaAs MESFET Final settling Time = 83uS Figure 3 ­ This GaAs MESFET switch took 83 µs to achieve a 0.05dB final settling time, which , 0.05dBm limit, the faster the ATE can report a measurement. Figure 3 shows a typical GaAs MESFET switch , significantly better performance than a GaAs MESFET switch at low frequency. they use. One inefficient way


Original
PDF 731-9400x441 com/articles/2004/2004 PE42552 42552 multigate FETs SPDT FETs SPDT stack 3 pins spdt push switch rf mems switch signal path designer
wireless on off switch

Abstract: antenna diversity switch pin configuration of switch antenna diversity switch for WLAN diversity SPDT SWITCH 6 GHZ 1 WATT GaAs MESFET
Text: issues affect the choice of a PIN switch or a GaAs MESFET switch. www. .com [1] GaAs MESFET , The attached table displays the key performance characteristics of a GaAs MESFET SPDT switch and the , switch. 1 GaAs MESFET SPDT switch DC to 2500 MHz Bandwidth Microsemi Silicon Nanomount switch , welcome. [1] "Silicon PIN Diode and GaAs MESFET Switches And Their Effects On Linearity Of Digital , MicroNote #708 The Advantages of PIN Diode Switches Over MESFET Switches By Bill Doherty


Original
PDF
MNM4200

Abstract: SPDT SWITCH 6 GHZ 1 WATT GaAs MESFET
Text: bandwidth far superior to GaAs MESFET designs. We accomplish this in a smaller footprint and with an order of magnitude greater power handling capacity than in GaAs MESFET designs. This makes the GaAs , signal switching tasks all the way to 6 GHz. Unlike GaAs MESFET designs, our NanoMount SPDT is , smaller as well. Thus the plastic injection molded lead frame construction used in many GaAs MESFET , to innovating new products. And just because the device is silicon (Si) vs. gallium arsenide ( GaAs


Original
PDF
2010 - MESFET Application

Abstract: No abstract text available
Text: HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Features P1dB Output , HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Gain vs. Temperature 18 16 , apps@hittite.com 3-2 Amplifiers - Linear & Power - Chip 6 HMC637 v03.0709 GaAs MESFET MMIC 1 WATT , apps@hittite.com HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Supply , .0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Outline Drawing 3 Amplifiers - Linear &


Original
PDF HMC637 HMC637 400mA MESFET Application
Not Available

Abstract: No abstract text available
Text: HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications , General Description The HMC637 is a GaAs MMIC MESFET Distributed Power Amplifier die which operates , Support: Phone: 978-250-3343 or apps@hittite.com HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER , HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Drain Bias Voltage (Vdd , - LINEAR & POWER - CHIP Absolute Maximum Ratings 3-4 HMC637 v03.0709 GaAs MESFET MMIC 1


Original
PDF HMC637 HMC637
RF7000

Abstract: RCA 836 network resistor L1C8
Text: TRF7000 POWER GaAs MESFET SLWS027- JULY 1996 · 3.6-V and 4.8-V Operating Voltage for AMPS/NADC , DALLAS, TEXAS 75265 7 -4 7 PRODUCT PREVIEW PK PACKAGE (TOP VIEW) TRF7000 POWER GaAs MESFET , en ts 7 -4 8 POST OFFICE BOX 655303 · DALLAS, TEXAS 75265 TRF7000 POWER GaAs MESFET S L W S 0 , 7 -4 9 TRF7000 POWER GaAs MESFET SLWS027 TYPICAL CHARACTERISTICS CD £ CD D -O I I * I , a s In s t r u m e n t s POST OFFICE SOX 655303 · DALLAS, TEXAS 75265 TRF7000 POWER GaAs MESFET


OCR Scan
PDF TRF7000 SLWS027- OT-89 F7000 1000pF RF7000 RCA 836 network resistor L1C8
2009 - HMC637

Abstract: No abstract text available
Text: HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications , The HMC637 is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz , .0709 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Broadband Gain & Return Loss Gain vs , : 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 103 HMC637 v03.0709 GaAs MESFET , Order On-line at www.hittite.com 12.5 HMC637 v03.0709 GaAs MESFET MMIC 1 WATT POWER


Original
PDF HMC637 HMC637
1998 - RF MESFET S parameters

Abstract: 1 transistor fm transmitter 5 watt "RF Power Amplifier" wireless mobile charging through microwaves UPP9401 GaAs MESFET amplifier Microsemi micronote 703 irfc20
Text: MicroNote 703 Silicon PIN Diode and GaAs MESFET Switches and Their Effects On Linearity of , performance of silicon PIN diode and GaAs MESFET switches. From: WIRELESS TECHNOLOGY Conference & , performance of Silicon PIN and GaAs MESFET Switches is given and particular system design considerations are , . Often a GaAs MESFET Switch is chosen for the T/R switching function because of convenience and apparent , budget and designers often choose a GaAs MESFET Switch driven from a voltage source. The trend toward


Original
PDF 64-QAM 256-QAM RF MESFET S parameters 1 transistor fm transmitter 5 watt "RF Power Amplifier" wireless mobile charging through microwaves UPP9401 GaAs MESFET amplifier Microsemi micronote 703 irfc20
2000 - power bjt advantages and disadvantages

Abstract: common base bjt GaAs MESFET amplifier small signal BJT transistor 915MHz Spread Spectrum TA0037 MESFET Application
Text: Bipolar Transistor ( GaAs HBT); Gallium Arsenide Metal Semiconductor Field Effect Transistor ( GaAs MESFET , TA0037 GaAs MESFET technology is widely used in high frequency applications. In addition to their , the control applications for GaAs MESFET technology and exploits the switching characteristics of the , amplifier slots from the GaAs MESFET , the MESFET remains a useful device for some applications , , Optimum Technology Match- GaAs HBT technology has found wide acceptance in the marketplace


Original
PDF TA0037 power bjt advantages and disadvantages common base bjt GaAs MESFET amplifier small signal BJT transistor 915MHz Spread Spectrum TA0037 MESFET Application
2000 - amplitude modulation ic,s

Abstract: rf digital data modulators ic uhf phase shifter rf2803 RF2402 rf digital modulators ic vhf gmsk receiver pll fsk MODULATOR rs232 TRANSMITTER GMSK vhf fsk modulator
Text: .) Fabrication processes for IC quadrature modulators include silicon-bipolar, GaAs MESFET , and , external circuitry must contain some form of internal or external balun. GaAs MESFET modulators provide , at the same frequency and includes a gain-control function. GaAs MESFET IC technology is the , compared to GaAs MESFET devices. (Model RF2422 uses this technology to match the performance of the , silicon-bipolar or GaAs MESFET technologies so HBT technology should be reserved for those applications above 2


Original
PDF TA0010 RF2422 RF2402 amplitude modulation ic,s rf digital data modulators ic uhf phase shifter rf2803 RF2402 rf digital modulators ic vhf gmsk receiver pll fsk MODULATOR rs232 TRANSMITTER GMSK vhf fsk modulator
2000 - MARCONI antennas

Abstract: marconi company 5V STANDBY grounded MARCONI antennas M198 NN12
Text: M198 CUSTOM SWITCH DRIVER FOR WIRELESS LAN AND OTHER GaAs MESFET CONTROL APPLICATIONS Features · 3 Complimentary outputs for GaAs MESFET switch control applications · Pin out compatibility , GaAs MESFET devices and switches. Outline Specification Parameter Symbol Positive supply , incoming CMOS control signals to the eight 0/­5V lines required by the GaAs LAN chip. The internal logic is , with complimentary outputs. These are inhibited by the STANDBY input. 6. Control of the GaAs


Original
PDF P35-4700 MARCONI antennas marconi company 5V STANDBY grounded MARCONI antennas M198 NN12
s parameters 4ghz

Abstract: transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters
Text: 2003 I 6427414 N E C/ CALIFORNIA S3 DE| tMH?mM □□DDflDfl 1 1 _NE463, DUAL GATE GaAs MESFET DEVICE , QDQDflDi 3 | 7~-3r*V NE463, DUAL GATE GaAs MESFET DEVICE CI I A RACTERISTICS ( Ta =25°C) (Com •d) DC , GATE GaAs MESFET " ■'' NE46385 COMMON SOURCE SCATTERING PARAMETERS +¡50 +90° +j10 -¡10 , □□□□filS 3 7 _NE463, DUAL GATE GaAs MESFET NE46J85 COMMON SOURCE SCATTERING PARAMETERS +j50 +¡10 -¡10 , ]>E|tM574m DOOOfllB S | 7 NE463, DUAL GATE GaAs MESFET NOTES: 1. Gain Calculations: MAG - |u{ k -


OCR Scan
PDF NE463 45GHz 12GHz NE463 s parameters 4ghz transistor GaAs FET low noise 4Ghz CCT-C3 MU1520 NE46300 NE46385 4ghz s parameters transistor NE46383 S110 transistor RF MESFET S parameters
1999 - POS-25

Abstract: 32 data input multiplexer explanation KGL4217 KGL4221 KGL4222 MULTIPLEXER IC
Text: manufactured using Oki Semiconductor's 0.2-µm gate length GaAs MESFET process. The KGL4217 Limiting Amplifier , Low-power dissipation · 0.2-µm gate length GaAs MESFET process · KGL4217 Limiting Amplifier: 24 , speed, low-power Limiting Amplifier IC uses 0.2-µm gate length GaAs MESFET and DCFL (Direct Coupled FET , -V power-supply 0.2-µm gate length GaAs MESFET process DCFL (Direct Coupled FET Logic) technology 24 , manufactured using Oki's 0.2-µm gate length GaAs MESFET process, and is mounted in a 48-pin package. By using


Original
PDF KGL4217/KGL4221/KGL4222 10-Gbps KGL4217 KGL4221 KGL4222 KGL4217venue POS-25 32 data input multiplexer explanation MULTIPLEXER IC
GSM repeater circuit

Abstract: GSM repeater ic gsm repeater DP-36 IMT-2000 GaAs MESFET
Text: Power Amplifier RFM0902-10 Product Features Application · Small size by using simple matching circuit board · High Efficiency · Single Supply Voltage · High Linearity, 10W Power · Heat sink 99.9% copper, gold plate · High Productivity · Low Manufacturing Cost · GaAs MESFET · GSM , . GaAs MESFET is used and attached on a copper sub carrier. It is connected by using bias and in/out , than other circuits for silicon IC's, LDMOS because GaAs MESFET is operated by low supply voltage


Original
PDF RFM0902-10 DP-36 IMT-2000, GSM repeater circuit GSM repeater ic gsm repeater DP-36 IMT-2000 GaAs MESFET
DP-36

Abstract: IMT-2000
Text: Power Amplifier RFM1950-10 Product Features Application · Small size by using simple matching circuit board · High Efficiency · Single Supply Voltage · High Linearity, 10W Power · Heat sink 99.9% copper, gold plate · High Productivity · Low Manufacturing Cost · GaAs MESFET · USPCS , . GaAs MESFET is used and attached on a copper sub carrier. It is connected by using bias and in/out , than other circuits for silicon IC's, LDMOS because GaAs MESFET is operated by low supply voltage


Original
PDF RFM1950-10 DP-36 IMT-2000, DP-36 IMT-2000
2008 - "p1db 37dbm"

Abstract: DP-36 IMT-2000
Text: Power Amplifier RFM0415-10 Product Features Application · Small size by using simple matching circuit board · High Efficiency · Single Supply Voltage · High Linearity, 10W Power · Heat sink 99.9% copper, gold plate · High Productivity · Low Manufacturing Cost · GaAs MESFET · TRS · , systems. GaAs MESFET is used and attached on a copper sub carrier. It is connected by using bias and in , simpler than other circuits for silicon IC's, LDMOS because GaAs MESFET is operated by low supply voltage


Original
PDF RFM0415-10 DP-36 IMT-2000, "p1db 37dbm" DP-36 IMT-2000
GSM repeater power amplifier module

Abstract: DP-36 IMT-2000 RFM1765-10 cdma repeater circuit
Text: Power Amplifier RFM1765-10 Product Features Application · Small size by using simple matching circuit board · High Efficiency · Single Supply Voltage · High Linearity, 10W Power · Heat sink 99.9% copper, gold plate · High Productivity · Low Manufacturing Cost · GaAs MESFET · PCS , . GaAs MESFET is used and attached on a copper sub carrier. It is connected by using bias and in/out , than other circuits for silicon IC's, LDMOS because GaAs MESFET is operated by low supply voltage


Original
PDF RFM1765-10 DP-36 IMT-2000, GSM repeater power amplifier module DP-36 IMT-2000 RFM1765-10 cdma repeater circuit
Supplyframe Tracking Pixel