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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTM4627IY#PBF Linear Technology LTM4627 - 15A DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 133; Temperature Range: -40°C to 85°C
LTM4627MPY#PBF Linear Technology LTM4627 - 15A DC/DC µModule (Power Module) Regulator; Package: BGA; Pins: 133; Temperature Range: -55°C to 125°C
LTM4627IV#PBF Linear Technology LTM4627 - 15A DC/DC µModule (Power Module) Regulator; Package: LGA; Pins: 133; Temperature Range: -40°C to 85°C
LTC3613EWKH#PBF Linear Technology LTC3613 - 24V, 15A Monolithic Step Down Regulator with Differential Output Sensing; Package: QFN; Pins: 56; Temperature Range: -40°C to 85°C
LTM4627EV#PBF Linear Technology LTM4627 - 15A DC/DC µModule (Power Module) Regulator; Package: LGA; Pins: 133; Temperature Range: -40°C to 85°C
LTC3613EWKH#TRPBF Linear Technology LTC3613 - 24V, 15A Monolithic Step Down Regulator with Differential Output Sensing; Package: QFN; Pins: 56; Temperature Range: -40°C to 85°C

GaAs FET 15A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - CR10

Abstract: MGFC47B3436B GaAs FET 15A
Text: PRELIMINARY MITSUBISHI SEMICONDUCTOR < GaAs FET > Notice: This is not a final specification , MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed , : Channel-case MITSUBISHI ELECTRIC (1/4) Spe. 2007 PRELIMINARY MITSUBISHI SEMICONDUCTOR < GaAs FET , . MGFC47B3436B 3.4 - 3.6GHz BAND 50W INTERNALLY MATCHED GaAs FET EVM(@WiMAX) vs . Pout characteristics freq


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PDF MGFC47B3436B MGFC47B3436B 37dBm CR10 GaAs FET 15A
2011 - Not Available

Abstract: No abstract text available
Text: =12V,Idq= 1.5A ,Pout=37dBm,Ta=25deg.C WiMAX:64QAM-3/4,Bw=7MHz < C band internally matched power GaAs FET , < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use , Bandwidth:6MHz *3 :Channel-case 1 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 â , GaAs FET > MGFC47B3436B 3.4 – 3.6 GHz BAND / 50W Keep safety first in your circuit designs


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PDF MGFC47B3436 MGFC47B3436B 37dBm 10ohm
2011 - MGFC47B3436

Abstract: MGFC47B
Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 ­ 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in , Publication Date : Apr., 2011 1 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6 , internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6 GHz BAND / 50W MGFC47B3436B RF TEST FIXTURE Publication Date : Apr., 2011 3 < C band internally matched power GaAs FET > MGFC47B3436B 3.4 ­ 3.6


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PDF MGFC47B3436 MGFC47B3436B 37dBm 10ohm MGFC47B3436 MGFC47B
1999 - FLL600IQ-2C

Abstract: Fujitsu GaAs FET Amplifier
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , FLL600IQ-2C L-Band High Power GaAs FET 1 2.0 (0.079) ±0.15 4 5 2.5 MIN. 4


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PDF FLL600IQ-2C FLL600IQ-2C FCSI1199M200 Fujitsu GaAs FET Amplifier
2004 - Fujitsu GaAs FET Amplifier design

Abstract: FLL600IQ-2C
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , GaAs FET 2 0.1 (0.004) 17.4±0.2 (0.685) 4.7 8.0 (0.315) 3 6 4-2.6±0.2


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PDF FLL600IQ-2C FLL600IQ-2C Fujitsu GaAs FET Amplifier design
1999 - FLL600IQ-2C

Abstract: No abstract text available
Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull , - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 , 36 40 add (%) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET , GaAs FET 1 2.0 (0.079) ±0.15 4 5 2.5 MIN. 4-R1.3 (0.051) 17.4 (0.685) 8.0


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PDF FLL600IQ-2C FLL600IQ-2C FCSI1199M200
2004 - Not Available

Abstract: No abstract text available
Text: High Power GaAs FET ACP vs. OUTPUT POWER VDS = 12V IDS = 1.5A fo = 2.14GHz W-CDMA Single Signal -5MHz , FLL600IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that offers , GaAs FET S-PARAMETERS VDS = 12V, IDS = 750mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 , -2C L-Band High Power GaAs FET Case Style "IQ" 2.0 MIN. (0.079) 1 2 0.1 (0.004) 4-2.6±0.2


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PDF FLL600IQ-2C FLL600IQ-2C
2011 - Not Available

Abstract: No abstract text available
Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in , internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W MGFK38A3745 TYPICAL , internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W MGFK38A3745 S-parameters , internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W Keep safety first in


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PDF MGFK38A3745 MGFK38A3745 50GHz
2011 - F1375

Abstract: 9137 006 208 MGFK38A3745
Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­ 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in , band internally matched power GaAs FET > MGFK38A3745 13.75 ­ 14.50 GHz BAND / 6W MGFK38A3745 , =10MHz Publication Date : Apr., 2011 2 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­ , Publication Date : Apr., 2011 3 < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 ­


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PDF MGFK38A3745 MGFK38A3745 50GHz 100ohm F1375 9137 006 208
2004 - 8002 1011 amplifier

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers , June-'04 MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET , CORPORATION June-'04 MGFL48V1920 TEST CONDITIONS : f=1.5-2.5GHz,VDS=12V,ID= 1.5A S11,S22 Smith Chart Z , -0.5 -1.0 -2.0 0.04 0.05 S PARAMETERS (Ta=25deg.C,VDS=12V,ID= 1.5A ) S Parameters (TYP.) S11 S21


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PDF MGFL48V1920 MGFL48V1920 gate22 8002 1011 amplifier
2011 - Not Available

Abstract: No abstract text available
Text: GaAs FET > MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use , deg.C/W GaAs FET > MGFC42V7177 7.1 - 7.7GHz BAND / 16W EVM , internally matched power GaAs FET > MGFC42V7177 7.1 - 7.7GHz BAND / 16W MGFC47B3538B RF TEST FIXTURE , :Teflon t=0.8mm Specific dielectric constant=2.6 UNIT:(mm) GaAs FET


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PDF MGFC47B3538B MGFC47B3538B 37dBm GF-60
2011 - MGFC47B3538B

Abstract: MGFC47B
Text: GaAs FET > MGFC47B3538B 3.5 ­ 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 , internally matched power GaAs FET > MGFC42V7177 7.1 - 7.7GHz BAND / 16W EVM(@WiMAX) vs . Pout , EVM GaAs FET > MGFC42V7177 7.1 - 7.7GHz BAND / 16W , 3 GaAs FET > MGFC42V7177 7.1 - 7.7GHz BAND / 16W Keep


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PDF MGFC47B3538B MGFC47B3538B 37dBm GF-60 MGFC47B
s18a

Abstract: MGFC38V5867 675g
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFC38V5867 5.8-6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC38V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees , < GaAs FET > MGFC38V5867 5.8 - 6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta , Transconductance VDS=3V,ID= 1.5A - 2 VGS(off) Pinch-off voltage VDS~3V,ID=15mA - - -4.5 V P1dB Output power at


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PDF MGFC38V5867 75GHz MGFC38V5867 38dBm 25deg s18a 675g
2005 - High Power GaAs FET

Abstract: GaAs FET 15A fll400ik-2c ED-4701 RM1101
Text: FLL400IK-2C High Voltage - High Power GaAs FET FEATURES High Output Power: P1dB=46.0dBm(Typ , Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in , Voltage - High Power GaAs FET Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm 2 FLL400IK-2C High Voltage - High Power GaAs FET For further information please , =2.17GHz IDS(DC)= 1.5A Pin=35dBm Rth -0.1 -5.0 -0.3 - -0.5 - V V 45.0 P1dB Power


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PDF FLL400IK-2C 17GHz FLL400IK-2C High Power GaAs FET GaAs FET 15A ED-4701 RM1101
2003 - MGFL48V1920

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR < GaAs FET > MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - , =1.5-2.5GHz,VDS=12V,ID= 1.5A 1.0 2.0 S11 S22 S21,S12 Polar Chart 4.0 3.0 2.0 5.0 0.2 S21 , -1.0 S PARAMETERS (Ta=25deg.C,VDS=12V,ID= 1.5A ) S Parameters (TYP.) S11 S21 S12 f (GHz) 1.50 , push-pull FET . MITSUBISHI ELECTRIC CORPORATION Mag. 0.837 0.843 0.847 0.852 0.860 0.866 0.873


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PDF MGFL48V1920 MGFL48V1920
L 0929

Abstract: s 0934 91564
Text: HSXAWAVS Hexawave, Inc. HWL34YRA L-Band Power GaAs FET Description The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. presently offered in low cost ceramic package. It is Outline Dimensions 1.625 ( 0 .065 ) Features · · · · Low Cost GaAs Power FET , HEXAWAVE Hexawave, Inc. HWL34YRA L-Band Power GaAs FET Small Signal Common Source Scattering , Power GaAs FET PAE (% 50 40 25 20 15 lGain 30 20 10 5 10 0 0 12 16


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PDF HWL34YRA HWL34YRA L 0929 s 0934 91564
2007 - Not Available

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5359-4SL TECHNICAL DATA FEATURES LOW , POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5359-4UL TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET , 5.9GHz HIGH GAIN G1dB=9.5dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS


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PDF TIM5359-4SL TIM5359-4UL
2009 - Not Available

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-4SL TECHNICAL DATA FEATURES LOW , 25 27 29 31 Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET MICROWAVE , 6.4GHz HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS , G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF


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PDF TIM5964-4SL TIM5964-4UL 15GHz
2007 - Not Available

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-4SL TECHNICAL DATA FEATURES HIGH , Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742 , MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at , IDSS VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A Rth(c-c , 4.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


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PDF TIM3742-4SL TIM3742-4UL 95GHz
2008 - Not Available

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7785-4SL TECHNICAL DATA FEATURES LOW , 25 27 29 31 Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET MICROWAVE , 8.5GHz HIGH GAIN G1dB=6.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , . -1.0 -5 TYP. 900 -2.5 2.6 4.5 MAX. -4.0 6.5 CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS , G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF


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PDF TIM7785-4SL TIM7785-4UL
2009 - tim7179-4ul

Abstract: TIM7179-4SL
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-4SL TECHNICAL DATA FEATURES LOW , 7.9GHz HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS , ) -40 -50 -60 21 23 25 27 29 31 Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-4UL TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at


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PDF TIM7179-4SL TIM7179-4UL tim7179-4ul TIM7179-4SL
2007 - Not Available

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM6472-4SL TECHNICAL DATA FEATURES LOW , 7.2GHz HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS , ) -40 -50 -60 21 23 25 27 29 31 Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM6472-4UL FEATURES HIGH POWER P1dB=36.5dBm at


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PDF TIM6472-4SL TIM6472-4UL
2009 - Not Available

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7785-4SL TECHNICAL DATA FEATURES LOW , -50 -60 32 34 36 38 40 42 Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET , 8.5GHz HIGH GAIN G1dB=6.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , . -1.0 -5 TYP. 900 -2.5 2.6 4.5 MAX. -4.0 6.5 CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS , 8.5GHz HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED


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PDF TIM7785-4SL TIM7785-4UL
2007 - Not Available

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-4SL TECHNICAL DATA FEATURES LOW , POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-4UL TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET , 5.0GHz HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS


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PDF TIM4450-4SL TIM4450-4UL
2007 - PIN275

Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-4SL TECHNICAL DATA FEATURES LOW , 25 27 29 31 Pout(dBm) @Single carrier level 4 MICROWAVE POWER GaAs FET MICROWAVE , 6.4GHz HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED , 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS , G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF


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PDF TIM5964-4SL TIM5964-4UL 15GHz PIN275
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