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QRW025A0A1 GE Critical Power QRW010/025/035/040 Series Power Module; dc-dc Converter, 36 Vdc - 75 Vdc Input, 1.0 to 12 Vdc Output; 10 A to 40 A
QRW035A0F1 GE Critical Power QRW010/025/035/040 Series Power Module; dc-dc Converter, 36 Vdc - 75 Vdc Input, 1.0 to 12 Vdc Output; 10 A to 40 A
QRW035A0G1-H GE Critical Power QRW010/025/035/040 Series Power Module; dc-dc Converter, 36 Vdc - 75 Vdc Input, 1.0 to 12 Vdc Output; 10 A to 40 A
QRW025A0A641Z GE Critical Power QRW010/025/035/040 Series Power Module; dc-dc Converter, 36 Vdc - 75 Vdc Input, 1.0 to 12 Vdc Output; 10 A to 40 A
QRW035A0F41Z GE Critical Power QRW010/025/035/040 Series Power Module; dc-dc Converter, 36 Vdc - 75 Vdc Input, 1.0 to 12 Vdc Output; 10 A to 40 A
QRW025A0A41 GE Critical Power QRW010/025/035/040 Series Power Module; dc-dc Converter, 36 Vdc - 75 Vdc Input, 1.0 to 12 Vdc Output; 10 A to 40 A

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GTC030RV16S-1P(025)(LC Amphenol Industrial Operations Heilind Electronics - -
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GTC030RV16S-1P(025)(LC) datasheet (1)

Part Manufacturer Description Type PDF
GTC030RV-16S-1P(025)LC Amphenol Industrial Operations Circular Connectors - Housings, Connectors, Interconnects, CONN HSG RCPT 7POS FLANGE PIN Original PDF

GTC030RV16S-1P(025)(LC) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract:
Text: 0.90 0.25 0.10 0.10 1.00 0.40 0.25 T M All Dim ensions in mm MaxiITÌUITI Ratings , < 3001ns, duty cycle < 2%. DS30079 Rev. 1P 1 of 2 MMST3906 Electrical Characteristics , (BR)EBO Ic EX Ib l -40 -40 -5.0 - - - - - V = -10|uA, lE = 0 V V nA nA lc = -1.0mA( Ib = 0 lE = -10|uA, lc = 0 V c E = -30V, V e b (OFF) = -3.0V V c e = -30V, V e b (o f f ) = -3.0V -50 -50 DC Current Gain hFE 60 80 100 60 30 300 lc lc lc lc V V -100mA


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PDF MMST3904) MMST3906 OT-323 OT-323, MIL-STD-202, -10mA, 100MHz 3001ns,
Not Available

Abstract:
Text: 0.30 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0-25 0.10 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0-40 0.25 , °C unless otherwise specified Symbol MMST2222A Unit Characteristic VcBO VcEO V ebo lc Pd R bja Tj> T , . Pulse test: Pulse width < 3001ns, duty cycle < 2%. DS30080 Rev. 1P 1 of 2 MMST2222A , Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) V (B R )C B O 75 40 6.0 = 10|uA, lE = 0 V(BR)CEO lc = 10mA( Ib = 0 lE = 10|uA, lc = 0 V,(BR)EBO ICBO ICEX Ie b o Ib l


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PDF MMST2222A MMST2907A) OT-323 OT-323, MIL-STD-202, 100MHz 100mA, 150mA, DS30080
Not Available

Abstract:
Text: : 0.006 grams (approx.) w -U l* D D E G H J M 0.65 Nominal 0-30 1.20 1.80 0.0 0.90 0.25 0.10 0-40 1.40 2.20 0.10 1.00 0.40 0.25 K L M t H T All Dimensions in mm Maximum , : Pulse width < 3001ns, duty cycle < 2%. DS30083 Rev. 1P 1 of 2 MMST4403 Electrical , Max - - - -100 -100 Unit V V V nA nA Test Condition = -100|uA, lE = 0 lc = -1.0mA( Ib = 0 lE = -100|uA, lc = 0 V c e = -35V, Veb(OFF) = -0-4V V ç e = -35V, V e b (o f f ) = -0.4V lc lc lc


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PDF MMST4403 MMST4401) OT-323 OT-323, MIL-STD-202, -20mA, 100MHz -150mA, -15mA
K2F transistor

Abstract:
Text: F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm , width < 300tis, duty cycle < 2%. DS30109 Rev. 1P 1 of 2 This Material Copyrighted By Its Respective , (br)cbo -60 — V lc = -10nA, lE = 0 Collector-Emitter Breakdown Voltage v(br)ceo -60 — V lc = -10mA, Ib = 0 Emitter-Base Breakdown Voltage V(br)ebo -5.0 — V lE = -10nA, lC = 0 Collector Cutoff , -0.5V ON CHARACTERISTICS (Note 2) DC Current Gain hfe 75 100 100 100 50 300 — lc = -100MA, VCe =


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PDF MMDT2907A OT-363, MIL-STD-202, OT-363 MMDT2907A -50mA, 100MHz -150mA, -15mA K2F transistor pnp k2f
Not Available

Abstract:
Text: 0.30 1.20 1.80 0.0 0.90 0.25 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 T B C C D E G H , -U 1 *D 0.65 Nominal +IJ JT * M T M 0.10 0.25 All Dimensions in mm Maximum , otherwise specified Symbol VcBO VcEO V ebo lc Pd Rbja Tj> T STG Characteristic MMST2907A -60 -60 -5.0 , width < 3001ns, duty cycle < 2%. DS30081 Rev. 1P 1 of 2 MMST2907A Electrical , Unit V V V nA MA nA nA Test Condition = -10|uA, lE = 0 lc = -10mA( Ib = 0 lE = -10|uA, lc = 0 VCB =


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PDF MMST2907A MMST2222A) OT-323 OT-323, MIL-STD-202, -150mA, -15mA -500mA, -50mA 150mA,
Not Available

Abstract:
Text: SURFACE MOUNT TRANSISTOR SOT-323 Dim -*l ¡h -' Min 0.30 1.15 2.00 0-30 1.20 1.80 0.0 0.90 0.25 , 0.65 Nominal K L t H T M 0.10 0.25 All Dimensions in mm Maximum Ratings , cycle < 2%. DS30084 Rev. 1P 1 of 2 MMST4401 Electrical Characteristics Characteristic OFF , 100 40 Max - - - 100 100 Unit V V V nA nA Test Condition = 100|uA, lE = 0 lc = 1.0mA( Ib = 0 lE = 100|uA, lc = 0 V ce = 35V, V eb (OFF) = 0-4V V çe = 35V, V e b (o ff ) = 0.4V DC


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PDF MMST4403) MMST4401 OT-323 OT-323, MIL-STD-202, 150mA, 500mA, 100MHz
marking WMP

Abstract:
Text: 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All , . Pulse test: Pulse width < 300tis, duty cycle < 2%. DS30111 Rev. 1P 1 of 2 This Material Copyrighted By , )ceo 40 — V lc = 1.0mA, lb = 0 Emitter-Base Breakdown Voltage V(br)ebo 6.0 — V le= 100nA, lc = 0 , €” lc = 100jjA,VCe= 1.0V lc = 1.0mA, Vce = 10V lc = 10mA, Vce = 10V lc = 150mA, VCe = 10V lc = 500mA, Vce = 2.0V Collector-Emitter Saturation Voltage vce(sat) — 0.40 0.75 V lc = 150mA, Ib = 15mA lc = 500mA


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PDF MMDT4401 OT-363, MIL-STD-202, OT-363 MMDT4401 100MHz 150mA, 300ns, DS30111 marking WMP 1P NPN NPN SMALL SIGNAL TRANSISTOR TRANSISTOR MARKING TE SOT363 marking 1p transistor TRANSISTOR 1P
DS301-2

Abstract:
Text: _o_o_o_o_o Collector-Emitter Saturation Voltage vce(sat) — - 0.25 -0.40 V le = -10mA, Ib = -1.0mA lc = , 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25°C unless otherwise specified , temperature. 2. Pulse test: Pulse width < 300tis, duty cycle < 2%. DS30124 Rev. 1P 1 of 2 This Material , ) Collector-Base Breakdown Voltage v(br)cbo -40 — V lc = -lOpA, lE = 0 Collector-Emitter Breakdown Voltage v(br)ceo -40 — V lc = -1.0mA, lB = 0 Emitter-Base Breakdown Voltage V(br)ebo -5.0 — V lE = -10nA, lc =


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PDF MMDT3906 OT-363, MIL-STD-202, OT-363 MMDT3906 -10mA, 100MHz -100nA, DS301-2
dual npn 500ma

Abstract:
Text: D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All , Voltage V(br)cbo 75 — V lC = 10nA, lE = 0 Collector-Emitter Breakdown Voltage V(br)ceo 40 — V lc = 10mA, Ib = 0 Emitter-Base Breakdown Voltage V(br)ebo 6.0 — V lE = 10tiA, lC = 0 Collector Cutoff , — 10 nA VCe = 60V, Veb(off) = 3.0V Emitter Cutoff Current !ebo — 10 nA Veb = 3.0V, lc = 0 Base , Gain hfe 35 50 75 100 40 50 35 300 — lc = 100nA, VCe= 10V lc = 1.0mA, VCe= 10V lc = 10mA, VCe = 10V lc


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PDF MMDT2222A MMDT2907A) OT-363, MIL-STD-202, OT-363 MMDT2222A 100MHz 100nA, 150mA, dual npn 500ma marking k1p MMDT2907A
2222a sot23

Abstract:
Text: Conditions Min. Max. Min. Max. Collector-emitter breakdown voltage V(BR)CEO 30 — 40 — V lc = 10 mA iB = o Collector-base breakdown voltage V(BR)CBO 60 — 75 — V lc = 10|xA lE = 0 Emitter-base breakdown voltage V(BR)EBO 5 — 6 — V lE= 10(xA lc — 0 Collector-emitter cut-off current 'CEX — â , =150'C Emitter base cut-off current 'ebo — — — 10 nA Veb = 3V lc = 0 Static forward current transfer ratio hFE 35 50 75 35 100 50 30 300 35 50 75 35 100 50 40 300 lc = 0.1 mA VCE =10V' lc - 1 mA VCE= 10V lc


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PDF FMMT2222 FMMT2222A FMMT2907 OT-23 FMMT2222A Co00/300 FMMT2369A 2222a sot23 2222a bc 2222a 50s MARKING CODE BCV72 G4 BC 30 BFQ31
MMST2222A

Abstract:
Text: 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25°C unless otherwise , Voltage VCEO -60 V Emitter-Base Voltage Ve bo -5.0 V Collector Current - Continuous (Note 1) lc -600 mA , CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO -60 — V lc = -10nA, lE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 — V lc = -10mA, lB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 — V Ie = -10HA, lc = 0 Collector Cutoff Current ICBO — -10 nA HA VQB = -50V, lE = 0 VQB =


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PDF MMST2907A MMST2222A) OT-323, MIL-STD-202, OT-323 Symb50mA -50mA, 100MHz -150mA, -15mA MMST2222A MMST2907A
Maxim sot-363

Abstract:
Text: 2.00 0.30 1.80 - 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 T B 1 B C C D F H J , Nominal M 5 P jQ h l K 0.90 0.25 0.10 _L T L M All Dim ensions in mm Maxim urn , : Pulse width < 300|ns> duty cycle < 2%. DS30088 Rev. 1P 1 of 2 MMDT3904 Electrical , (BR)CBO V(BR)CEO V(BR)EBO Ic EX 60 40 5.0 - - - - V V V nA nA = 10|uA, lE = 0 lc = 1.0mA( Ib = 0 lE = 10|uA, lc = 0 VcE = 30V, V e b (OFF) = 3-OV V ç e = 30V, V e b (o f f ) = 3.0V


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PDF MMDT3904 OT-363 OT-363, MIL-STD-202, 100MHz 3001ns, DS30088 Maxim sot-363
Not Available

Abstract:
Text: SURFACE MOUNT TRANSISTOR SOT-323 H ,h-A Dim A Min 0.30 1.15 2.00 0.30 1.20 1.80 0-0 0.90 0.25 , { M K L n \±ÌJ njr M 0.10 0.25 All Dimensions in mm Maximum Ratings Collector-Base , Rev. 1P 1 of 2 MMST3904 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note , V V nA nA Test Condition = 10|uA, lE = 0 lc = 1.0mA( Ib = 0 lE = 10|uA, lc = 0 VcE = 30V, V eb , - PF PF kQ X 1C T 4 VCB = 5.0V, f = 1.0MHz, lE = 0 VEB = 0.5V, f = 1.0MHz, lc = 0 1.0 0.5


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PDF MMST3906) MMST3904 OT-323 OT-323, MIL-STD-202, 100MHz 3001ns, DS30082
MMST2222A

Abstract:
Text: 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25°C unless otherwise , VCEO 40 V Emitter-Base Voltage Ve bo 6.0 V Collector Current - Continuous (Note 1) lc 600 mA Power , 2) Collector-Base Breakdown Voltage V(BR)CBO 75 — V lc = 10nA, lE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 — V lc = 10mA, lB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 — V lE = 10tiA, lc = 0 Collector Cutoff Current ICBO — 10 nA HA VQB = 60V, IE = 0 VQB = 60V, IE = 0, TA


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PDF MMST2222A MMST2907A) OT-323, MIL-STD-202, OT-323 100MHz 100nA, 150mA, 300tis, MMST2222A MMST2907A
MMST4401

Abstract:
Text: 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25°C unless otherwise specified , ) Collector-Base Breakdown Voltage v(br)cbo -40 — V lc = -100nA, lE = 0 Collector-Emitter Breakdown Voltage v(br)ceo -40 — V lc = -1.0mA, lB = 0 Emitter-Base Breakdown Voltage V(br)ebo -5.0 — V Ie = -100mA, lc , 60 100 100 20 300 — lc = -100MA, VCe= -10V lc = -1.0mA, VCe= -10V lc = -10mA, VCe= -10V lc =-150mA, Vce= -2.0V lc =-500mA, VCe = -2.0V Collector-Emitter Saturation Voltage vce(sat) — -0.40 -0.75 V lc


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PDF MMST4403 MMST4401) OT-323, MIL-STD-202, OT-323 -20mA, 100MHz -150mA, -15mA MMST4401 MMST4403
MMST3904

Abstract:
Text: 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25°C unless otherwise specified , ) Collector-Base Breakdown Voltage v(br)cbo 60 — V lc = 100nA, lE = 0 Collector-Emitter Breakdown Voltage v(br)ceo 40 — V lc = 1.0mA, lB = 0 Emitter-Base Breakdown Voltage V(br)ebo 6.0 — V lE= 100nA, lc = 0 , €” lc = 100jjA,VCe= 1.0v lc = 1.0mA, Vce = 10V lc = 10mA, Vce = 10V lc = 150mA, vce = 1.0V lc = 500mA, Vce = 2.0V Collector-Emitter Saturation Voltage vce(sat) — 0.40 0.75 V lc = 150mA, ib = 15mA lc =


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PDF MMST4401 MMST4403) OT-323, MIL-STD-202, OT-323 MMST30 100MHz 150mA, 300tis, MMST3904 MMST4401 MMST4403
K6N sot363 marking

Abstract:
Text: 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25°C unless otherwise specified , temperature. 2. Pulse test: Pulse width < 300tis, duty cycle < 2%. DS30088 Rev. 1P 1 of 2 This Material , ) Collector-Base Breakdown Voltage V(BR)CBO 60 — V lc = 10(JA, Ie = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 — V lc = 1.0mA, lB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 6.0 V Ie=10HA, Ic = O


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PDF MMDT3904 OT-363, MIL-STD-202, OT-363 MMDT3904 100MHz 100nA, 300tis, DS30088 K6N sot363 marking 1P NPN 1P surface mount transistor 33ro Scans-0026527 TRANSISTOR marking k2 dual
MMST3904

Abstract:
Text: 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25°C unless otherwise specified , Emitter-Base Voltage Ve bo -5.0 V Collector Current - Continuous (Note 1) lc -200 mA Power Dissipation (Note , 2) Collector-Base Breakdown Voltage V(BR)CBO -40 — V lc = -lOpA, lE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 — V lc = -1.0mA, lB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 — V lE = -10nA, lc = 0 Collector Cutoff Current ICEX — -50 nA VCE = -30V, VEB(OFF) = -3.0V Base


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PDF MMST3906 MMST3904) OT-323, MIL-STD-202, OT-323 MMST391 -10mA, 100MHz -100nA, MMST3904 MMST3906
BSS66

Abstract:
Text: Conditions Min. Typ. Max. Collector-emitter breakdown voltage V(BR)CEO 40 — — V lc = 1 mA Collector-base breakdown voltage V(BR)CBO 60 — — V lc = 10 nA Emitter-base breakdown voltage V(BR)EBO 6 â , Collector-emitter saturation voltage VCE lc = 10 mA, lB = 1 mA lc = 50 mA, lB = 5 mA Base-emitter saturation voltage VBE(sat) 0.65 — 0.85 0.95 V V lc = 10 mA, lB = 1 mA lc = 50 mA, lB = 5 mA Static forward current transfer ratio BSS66 bFE 20 35 50 30 15 — 150 lc = 100 iiA ' lc = 1 mA lc = 10


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PDF BSS66 BSS67 BSS69 BSS70. OT-23 BSS66& BSS67 FMMT2222 FMMT2369A cg 5763 BSS67R BSS66R BFQ31 FMMT2369 TR marking L6 sot23 BSS70
TF411

Abstract:
Text: Discrete POWER & Signal Technologies PN2222A MMBT2222A PZT2222A SOT-23 Mark: 1P SOT , V ebo lc Tj, Tstg * Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector , Current Base Cutoff Current lc = 10 mA, IB = 0 40 75 6 .0 V V V 10 0 .0 1 10 10 l c = 1 0 jj^A, l E = 0 Ie = 1 0 hA, lc = 0 VC E = 60 V, V e b (o ff) = 3.0 V nA HA nA Iebo Ibl V cb = 60 V, lE = 0 VC B = 6 0 V, lE = 0, Ta = 150°C VE B= 3.0 V, lc = 0 V ce = 60 V, VE B (O F F


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PDF PN2222A MMBT2222A MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 TF411 PN2222A le t2222 TF-411
BCW71K1

Abstract:
Text: Voltage Vcbo 50 Volts Collector-Emitter Voltage ( lc = 2.0 mA) Vceo 45 Volts Emitter-Base Voltage Vebo 5.0 Volts Collector Current lc 100 mA Peak Collector Current •cm 200 mA Power Dissipation at Tamb , 550 — 700 mV lc = 2 mA, VCE = 5V Collector-emitter saturation voltage VCE(sat) — 120 210 250 mV mV lc = 10 mA, lB = 0.5 mA lc = 50 mA, lB = 2.5 mA Base-emitter saturation voltage VBE(sat) — 750 850 — mV mV lc = 10 mA, lB = 0.5 mA lc = 50 mA, lB = 2.5 mA Static forward current transfer ratio


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PDF BCW71 BCW72 BCW69 OT-23 FMMT5087 BCW70 BCX71G BCX71H BCW71K1 BCW72R-K5 BFQ31 BCW71 AG BCW71R BCW72 BCW72R BCW29
FB222

Abstract:
Text: #1 B1 SC70-6 M a rk : . 1P SuperSOTTM-6 M a rk : . 1P SOIC-16 C 1 NPN Multi-Chip General , lc T a = 25°C unless otherwise noted Parameter C ollector-Em itter Voltage Collector-Base , Current Em itter Cutoff Current Base Cutoff Current lc = 1 0 m A , Ib = 0 lc = 1 0 |oA, lE = 0 I e = 1 0 |oA, lc = 0 V c e = 6 0 V , V e b ( o ff ) = 3 .0 V o o > > > > O o C O CD Il II O o' Il II t n , J 10 10 20 II Iebo I bl V eb = 3 .0 V , lc = o V c e = 6 0 V , V e b ( o f f ) = 3 .0 V


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PDF FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16 FB222 SOIC1
BCV71R-K6

Abstract:
Text: BCV72 Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage ( lc = 2mA) VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current lc 100 mA Peak Collector Current 'CM 200 mA Power , MA lE = 0, VCB=20V lE = 0, Vcb = 20V Tj = 100°C Base-emitter voltage VBE 550 - 750 mV lc = 2mA, Vce = 5V Collector-emitter saturation voltage VcElsiltl - 120 210 250 mV mV lc = 10mA, lB = 0.5mA lc = 50mA, lB = 2.5mA Base-emitter saturation voltage VBEIsat) 750 850 - mV mV lc = 10mA, lB = 0.5mA


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PDF BCV71 BCV72 OT-23 BCV72 FMMT5087 BCW69 BCW70 BCV71R-K6 BCV72R BCV72-K8 small signal transistor transistor marking code 7E SOT-23 BCV72R-K9 BCW29 BFQ31 BFQ31A
MMST3904

Abstract:
Text: ’ <<<<< Collector-Emitter Saturation Voltage VCE(SAT) — 0.25 0.40 V le = 10mA, Ib = 1.0mA lc = 50mA, lB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) 0.65 0.85 0.95 V lc = 10mA, lB = 1.0mA lc = 50mA, lB = 5.0mA SMALL , 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 , Voltage V(BR)CBO 60 — V lc = 10(JA, Ie = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 — V lc = , Capacitance Cibo — 8.0 PF VEB = 0.5V, f = 1.0MHz, lc = 0 Input Impedance hie 1.0 10 k£2 VCe= 10V, lc =


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PDF MMST3904 MMST3906) OT-323, MIL-STD-202, OT-323 MMST3904 100MHz 100nA, 300tis, DS30082 MMST3906
sd marking bh

Abstract:
Text: . Unit Conditions Collector-base breakdown voltage v(br)cbo 60 - V lc = 10MA Collector-emitter breakdown voltage v(br)ceo 60 - V lc = 10mA Emitter-base breakdown voltage 6 - V lE=10HA Collector , nA VBE = 5V Static forward current transfer ratio hFE 30 100 20 175 200 250 500 800 lc = VA, Vce = 5V Ic=10hA, Vce = 5V Ic=10^A, VCe = 5V Tamb = 55°C lc = 100mA, Vce = 5V Ic = 500/jA, Vce = 5V lc =1mA, Vce = 5V lc = 10mA, Vce = 5V Base-emitter voltage Vbe - 0.95 V lc = 1mA, Vce = 5V Collector-emitter


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PDF FMMT2484 100mA, 500/jA, FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J BCX71K sd marking bh FMMT3903 FMMT2484 Ferranti Semiconductors BFS20 BFQ31A BFQ31 BCW30 BCW29 BCV72
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