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GT8Q101 Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel GT8Q101 ECAD Model
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GT8Q101 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
GT8Q101 GT8Q101 ECAD Model Toshiba Discrete IGBTs Original PDF
GT8Q101 GT8Q101 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
GT8Q101 GT8Q101 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
GT8Q101 GT8Q101 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GT8Q101 GT8Q101 ECAD Model Toshiba GTR Module Silicon N Channel IGBT Scan PDF
GT8Q101 GT8Q101 ECAD Model Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Scan PDF
GT8Q101 GT8Q101 ECAD Model Toshiba N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

GT8Q101 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
S200-20

Abstract: GT8Q101 GT8Q101 Transistor RQ150
Text: TOSHIBA GT8Q101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT8Q101 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=0.5/^s (Max.) • Low Saturation Voltage : Vqe (sat)= 4.0V (Max.) • Enhancement-Mode MAXIMUM , GT8Q101 IC - VCE VCE - VGE 16 12 COMMON EMITTER Tc = 25°C ^20 \ \ s_Pr = 100W ^15 1 0 \ S , \ s200 20 15 10 20 40 60 80 GATE CHARGE QG (nC) 1997-02-03 2/3 TOSHIBA GT8Q101 switching


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PDF GT8Q101 2-16C1C Rq-150 S200-20 GT8Q101 GT8Q101 Transistor RQ150
Not Available

Abstract: No abstract text available
Text: GT8Q101 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15.9 MAX . High Input Impedance . High Speed : tf-0.5(/s(f1ax.) r 03-2 ± 0.2 . Low Saturation Voltage : \'c e ( s a t)" 4 .0V(Max. ) . Enhancement-Mode M O < MAXIMUM RATINGS (Ta , O D O O > I GT8Q101 Ok d pi £ O V» *- GATE-EM ITTER VOLTAGE O « tn fO Vr, F_ (V ) o 3 w 30 GT8Q101 SWITCHING TIME (it' ) SWITCHING TIME COMMON


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PDF GT8Q101 Ta-25 Tc-25
GT8Q101 Transistor

Abstract: GT8Q101 V400
Text: TOSHIBA GT8Q101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT8Q101 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed , GT8Q101 IC - VCE VCE - VGE 16 12 COMMON EMITTER Tc = 25°C ^20 I \ \ 1 i^Pr = 100W ^15 1 0 , \ s200 20 15 10 20 40 60 80 GATE CHARGE QG (nC) 2 2001-05-24 TOSHIBA GT8Q101 switching , 0 400 800 1200 1600 2000 2400 COLLECTOR-EMITTER VOLTAGE VQE (V) 3 2001-05-24 TOSHIBA GT8Q101


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PDF GT8Q101 2-16C1C GT8Q101 Transistor GT8Q101 V400
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT8Q101 fi T R n 1 n 1 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS · · · · High Input Impedance High Speed : tf- 0.5/^s (Max.) (sa t) Unit in mm 15.9M A X 53.2 ±0.2 m 2.0 ± 0.3 + 0.3 1 .0 - 0 .2 5 Low Saturation Voltage : V qe Enhancement-Mode = 4-0V (Max.) MAXIMUM RATINGS (Ta , (V) EMITTER / / - Vj r*¡II " > GT8Q101 TO SH IB A GT8Q101 SWITCHING


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PDF GT8Q101
GT8Q101 Transistor

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT8Q101 G T 8 Q 1 01 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1 5 .9 M A X # 3 .2 Í Q . ? U nit in mm High Input Impedance High Speed : tf=0.5/^s (Max.) Low Saturation Voltage : V c e (sat) = 4 -°V (Max.) Enhancement-Mode MAXIMUM RATINGS (Ta = 2S°C) CHARACTERISTIC Collector-Emitter , 296 TOSHIBA_ GT8Q101 IC - V CE VCE - Vg E 0 C O


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PDF GT8Q101 2-16C1C GT8Q101 Transistor
Not Available

Abstract: No abstract text available
Text: TO SHIBA GT8Q101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 8 Q 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • 1 5 .9 M A X High Input Impedance High Speed : tf=0.5,«s (Max.) Low Saturation Voltage : VGE (sat)~4-0V (Max.) Enhancement-Mode m C) 2 .0 ± 0 . 3 + 0.3 1.0 - 0 .2 5 , § i-g Q H < s o o c £ O P3 < O 0 1 < o H H GT8Q101


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PDF GT8Q101
G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 (SM) GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101 GT25G101 (SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GT25Q301 GT30J301 GT30J311 GT40M101 GT40M301 GT40T101 GT5G101 GT5G103 GT50J102 GT50J301 GT60M104 GT60M301 GT60M302 GT8G101 GT8J101 GT8J102 (SM) GT8Q101 GT8Q102 (SM) GT80J101 Page 163 166


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PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Not Available

Abstract: No abstract text available
Text: SILICON N CHANNEL IGBT GT8Q101 Unit in HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=0.5(js(Max.) r. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 15.9 MAX 0 3 .2 ÍO .2 r m - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature SYIJBOL VCES vges 2.0 ± 0 .3 + 0.3 1 . 0 -


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PDF GT8Q101 2-16C
GT30J322

Abstract: MP6750 MG200Q2YS40 MG75J2YS50 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: GT10Q311 GT15M321 FRD GT8Q101 GT8Q102 (SM) GT8J101 GT8J102 (SM) 5 GT5G102 GT5G103 P-ch , TO-3P (N) GT25J102 600 25 80 3.0 25 0.15 TO-3P (N) IS GT8Q101 1200 8 , GT40M101 GT8Q101 1200 GT8Q102 (SM) *GT10Q101 GT15Q101 GT60M105 GT25Q101 *GT15Q102


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PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
GT80J101

Abstract: MG150Q1JS mg100j6es5 MG150Q2YS40 MG300Q2YS40 MG15J6ES40 GT60M301 MG75J6ES50 MG100Q2YS42 MG360V1US41
Text: INDEX Page , Discrete Types GT8J101 . . 69-71 GT8J102 (SM ). . 72-75 GT8Q101 GT15J101 GT15J102 . . 76-78 . . 82-84 . . 85-87 GT8Q102 (SM) . . 79-81 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 Page . 214-219 . 220-225 . 226-231 . . 232-235 MG100Q1JS40 MG150J1ZS50 MG150Q1JS40 MG200Q1JS40 Page . 398-402 . . 408-412 . 413-417 . . 418-422 MG100Q1ZS40 . 403-407


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PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG150Q1JS mg100j6es5 MG150Q2YS40 MG300Q2YS40 MG15J6ES40 GT60M301 MG75J6ES50 MG100Q2YS42 MG360V1US41
2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Text: 2SD2498 2SD2499 2SD2525 2SD2526 2SD2536 2SD2539 S2000N S2055N GT5G101 GT8G101 GT8J101 GT8J102 (SM) GT8Q101


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PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
10A600V

Abstract: 1XGH20N60AU1 HGTP20N6QB3 IGBT cross reference IXSH20N60AU1 12A600V 20a600v SGL40N150 CT60AM-20 igbt 400V 5A
Text: .TO-3P IRGPH40M IRGPH50M IRGPH50K IRGPH20M GT40T101 GT8Q101 GT15Q101 GT25Q101 SGH5N120RUFD 5A1200V


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PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 12A600V 20a600v SGL40N150 CT60AM-20 igbt 400V 5A
2000 - GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: GT15Q101 GT15Q102 GT15Q311 GT10Q301 GT10Q101 GT8Q101 GT8Q102 600V GT25J102 GT25Q301 , No. GT8J101 GT8J102 GT15J101 GT15J102 GT15J103 GT25J101 GT25J102 GT8Q101 GT8Q102 GT15Q101 , 2.00* NPM GT8N101 1000 8 4.0 1.00 TO-3P (N) GT8Q101 1200 8 4.0 0.50


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PDF
MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400J2YS40 MG400Q1US11 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Text: S5979 2-33F1A 2 x 5 0 A FRD GT8Q101 @ TO-3P(N) o 1200 GT8Q102(SM) T0-220(SM) BS MG300J1US1


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PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400J2YS40 MG400Q1US11 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Not Available

Abstract: No abstract text available
Text: T O S H IB A TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT GT8Q101 G T 8 Q 1 01 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 15.9M AX Unit in mm · · · · High Input Impedance High Speed : tf=0.5,«s (Max.) Low Saturation Voltage : VGE (sat)~4-0V (Max.) Enhancement-Mode SYMBOL VCES DC lms vges Ic m C) - 2 - 3 - ?S3.2 + 0.2 eÆ 2 .01 0 .3 + 0.3 1.0 - 0.25 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Colleetor-Emitter


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PDF GT8Q101
GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG400Q1US11 MG50J6ES40 MG75J2YS40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: MG50Q1BS1 2-33F1A S5979 2-33F1A 2 x 5 0 A FRD GT8Q101 @ TO-3P(N) o GT8Q102(SM) T0-220{SM) BS S5J17M


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PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG400Q1US11 MG50J6ES40 MG75J2YS40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
S5J53

Abstract: S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
Text: } GT25J101 GT8Q101 GT8Q102 GT15Q101 GT25Q1Û1 - - 18 TOSHIBA [ 2 1 Introduction · Th ird


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PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 3SK283 F1411 S2000F 2SK455 3SK275 3SK284 GT8N101 GT8Q101 2SK456


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PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: GT8Q101 GT8Q102 GT10Q311 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101 GT15Q311 GT20J311 GT25H101


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PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
MG30H1BL1

Abstract: s3885 MG100g2ys1 MG100H2ZS1 MG100N2YS1 MP6502 MP6101 MG15J6ES1 MG25Q6ES1 GT50J101
Text: BIPOLAR DARLINGTON I (400-600V) # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX CONNECTION CIRCUIT SYMBOL VCES (V) 500 BS 600 1000 1200 500 600 US GT8 J 101 * GT8N101 it GT8Q101 * M A X IM U M RATING le (A) 8 15 g t is h io i 25 GT25H101P MG25H1BS1 GT25JI01 50 (400V) GT50G102* MG50H1BS1 GT50J101


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PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100g2ys1 MG100H2ZS1 MG100N2YS1 MP6502 MP6101 MG15J6ES1 MG25Q6ES1 GT50J101
s5j53

Abstract: S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
Text: switching Applications 900 900 900 900 900 900 600 600 GT8J101 GT8J102 GT8N101 GT8Q101


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PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
Text: applications Audio amp applications 80 TO-3P(L) GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101


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PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: TO-3P(L) GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101 GT8Q102 GT10Q311 GT15J101 GT15J102


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PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: GT8J101 GT8J102 GT8N101 GT8Q101 GT8Q102 GT10Q311 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101


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PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: GT60M301 GT60M302 GT60M305 GT60M322 GT60N323 GT80J101 GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101


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PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
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