The Datasheet Archive

GT8J102 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
GT8J102 GT8J102 ECAD Model Toshiba Discrete IGBTs Original PDF
GT8J102 GT8J102 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GT8J102 GT8J102 ECAD Model Others IGBT Scan PDF
GT8J102 GT8J102 ECAD Model Toshiba 600V 8A N-Channel IGBT Scan PDF
GT8J102(SM) GT8J102(SM) ECAD Model Toshiba N-Channel IGBT Scan PDF
GT8J102SM GT8J102SM ECAD Model Toshiba N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
GT8J102SM GT8J102SM ECAD Model Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Scan PDF

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GT8J102

Abstract: No abstract text available
Text: TOSHIBA GT8J102 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance , tf — 0.15 0.35 Turn-off Time toff — 0.5 1.0 1 2001-05-24 TOSHIBA GT8J102 (SM) IC - VCE , TOSHIBA GT8J102 (SM) switching time - iq switching time - rq 0.5 0.3 0.1 0.05 COMMON EMITTER Vcc = , ­ 0 100 200 300 400 500 600 700 COLLECTOR-EMITTER VOLTAGE VQE (V) 3 2001-05-24 TOSHIBA GT8J102 (SM


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PDF GT8J102 2-10S2C
Not Available

Abstract: No abstract text available
Text: GT8J102 (SM)- O O HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm · High Input Impedance · High Speed · Low Saturation Voltage · Enhancement-Mode MAXIMUM RATINGS (Ta - 25°C) CHARACTERISTICS Collector-Emitter Voltage G ate-Em itter Voltage Collector C urrent DC 1ms , 1160 GT8J102 (SM) Ic Vq e (V) - Vc e VCE - Vq e C OM M ON MITTBR T - -4 0 * C , IC (A) SAFE OPERATING AREA CTi ro C O L LEC TO R C U R R E N T IC (A) GT8J102 (SM


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PDF GT8J102 35/us
Not Available

Abstract: No abstract text available
Text: GT8J102 (SM) O HIGH POWER SWITCHING APPLICATIONS. 0 M OTOR CONTROL APPLICATIONS. Unit in mm · High Input Impedance · High Speed · Low Saturation Voltage · Enhancement-Mode M A X IM U M RATINGS (Ta = 2 5'C ) tf=0.35^s(Max.) : Vc e (sat) = 4-0 (Max.) CHARACTERISTICS Collector-Emitter Voltage , H WO n 2 -H iii 338 z o ro co III 111 GT8J102 (SM) GATE-EMITTER , o lta g e v c e GT8J102 (SM) SW ITCHING TIM E - lc SW ITCHING TIM E - R q COMMON


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PDF GT8J102 Te-26
GT8J102

Abstract: PFE13
Text: TOSHIBA GT8J102 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8J1 02 (S M) O HIGH POWER SWITCHING APPLICATIONS. O MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : • Low Saturation Voltage : • Enhancement-Mode MAXIMUM RATINGS (Ta = 25 , subject to change without notice. 1997-10-13 1/3 TOSHIBA GT8J102 (SM) IC - VCE VCE - VGE 16 12 I , CHARGE qq (nc) 1997-10-13 2/3 TOSHIBA GT8J102 (SM) switching time - iq switching time - rg 0.5 0.3


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PDF GT8J102 2-10S2C PFE13
Not Available

Abstract: No abstract text available
Text: TO SHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR GT8J102 (SM) SILICON N CHANNEL IGBT G T 8 J 1 0 2 (SM) O HIGH P O W E R SW ITCHIN G APPLICATIONS. O M O TO R CONTROL APPLICATIONS. · H igh In p u t Im pedance · H igh Speed · Low S atu ratio n Voltage · E nhancem ent-M ode M A X IM U M , change without notice 293 TOSHIBA GT8J102 (SM) ic - V CE VCE - V GE VC E - VGE , CURRENT Ic IA) n ts f 295 S W IT C H IN G T IM E (pa) GATE RESISTA N C E F < c GT8J102


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PDF GT8J102
k168

Abstract: GT8J102
Text: TOSHIBA GT8J102 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement-Mode MAXIMUM RATINGS (Ta = 25°C) tf , 1/3 TOSHIBA GT8J102 (SM) IC - VCE vce - vge 16 12 I 1 / 20/ / COMMON EMITTER Tc = 25 , 10 20 30 40 50 GATE CHARGE Qq (nc) 1998-09-28 2/3 TOSHIBA GT8J102 (SM) switching time - iq


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PDF GT8J102 2-10S2C k168
Not Available

Abstract: No abstract text available
Text: TO SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT8J102 (SM) SILICON N CHANNEL IGBT G T 8 J 1 0 2 (S M) O HIGH POWER SWITCHING APPLICATIONS. O U nit in mm MOTOR CONTROL APPLICATIONS. 1 0.3 MAX 5.0 1.32 V m p u u x iiip & u a u v ^ · High Speed · Low Saturation Voltage · Enhancement-Mode MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS Collector-Emitter Voltage Gate-Em , GT8J102 (SM) SWITCHING TIME - Ic 10 COLLECTOR CURRENT le (A) 30 100 300 RG 1000 (H


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PDF GT8J102 35/ws
Not Available

Abstract: No abstract text available
Text: TO SH IB A GT8J102 (SM) G T 8 J 1 0 2 (S M) TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10.3M AX. 1.32 • • • • High Input Impedance High Speed : tf= 0.35^8 (Max.) Low Saturation Voltage : V cE(sat) = 4-0 V (Max-) Enhancement-Mode 0.1 E 2.54 M A X IM U M RATINGS (Ta , change w ith o u t notice. 1998-09-28 1/3 TO SH IB A GT8J102 (SM) IC - VCE - Vg e Vce


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PDF GT8J102
G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 (SM) GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101 GT25G101 (SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GT25Q301 GT30J301 GT30J311 GT40M101 GT40M301 GT40T101 GT5G101 GT5G103 GT50J102 GT50J301 GT60M104 GT60M301 GT60M302 GT8G101 GT8J101 GT8J102 (SM) GT8Q101 GT8Q102 (SM) GT80J101 Page 163 166


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PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
GT30J322

Abstract: MP6750 MG200Q2YS40 MG75J2YS50 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: GT10Q311 GT15M321 FRD GT8Q101 GT8Q102 (SM) GT8J101 GT8J102 (SM) 5 GT5G102 GT5G103 P-ch , ) typ. IC (A) GT8J101 600 8 30 3.0 8 0.15 TO-220 (NIS) GT8J102 (SM) 600 , GT20G102 (SM) GT25G102 (SM) GT5G103 GT8G103 GT8G121 GT15J101 GT8J101 600 GT15J102 GT8J102


Original
PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT8J102 (SM) SILICON N CHANNEL IGBT O HIGH POWER SWITCHING APPLICATIONS. O MOTOR CONTROL APPLICATIONS. G T 8 J 1 0 2 (S M) : tf=0.35,«s (Max.) : VCE (sat) = 4-0 (Max-) Unit in mm · · · · High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode CHARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage DC , 10-13 - 1/3 TO SH IBA GT8J102 (SM) IC - V C E V CE - VGE >S M Ü s? » »


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PDF GT8J102
GT80J101

Abstract: MG150Q1JS mg100j6es5 MG150Q2YS40 MG300Q2YS40 MG15J6ES40 GT60M301 MG75J6ES50 MG100Q2YS42 MG360V1US41
Text: INDEX Page , Discrete Types GT8J101 . . 69-71 GT8J102 (SM ). . 72-75 GT8Q101 GT15J101 GT15J102 . . 76-78 . . 82-84 . . 85-87 GT8Q102 (SM) . . 79-81 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 Page . 214-219 . 220-225 . 226-231 . . 232-235 MG100Q1JS40 MG150J1ZS50 MG150Q1JS40 MG200Q1JS40 Page . 398-402 . . 408-412 . 413-417 . . 418-422 MG100Q1ZS40 . 403-407


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PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG150Q1JS mg100j6es5 MG150Q2YS40 MG300Q2YS40 MG15J6ES40 GT60M301 MG75J6ES50 MG100Q2YS42 MG360V1US41
2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Text: 2SD2498 2SD2499 2SD2525 2SD2526 2SD2536 2SD2539 S2000N S2055N GT5G101 GT8G101 GT8J101 GT8J102 (SM) GT8Q101


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PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400J2YS40 MG400Q1US11 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Text: 600 800 600 GT8J102 (SM) T0-220(SM) GT15J101 @ GT25J101 @ TO-3P(N) TO-3P(N) GT15J102 T0


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PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400J2YS40 MG400Q1US11 MG150J2YS40 MG200Q2YS1 MG200J2YS45
2000 - GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: GT15J103 GT10J301 GT10J311 GT10J303 GT10J312 GT8J101 GT8J102 GT5J301 GT5J311 GT15Q301 , No. GT8J101 GT8J102 GT15J101 GT15J102 GT15J103 GT25J101 GT25J102 GT8Q101 GT8Q102 GT15Q101


Original
PDF
GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG400Q1US11 MG50J6ES40 MG75J2YS40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: ) GT8J102 (SM) T0-220(SM) S5978 2-33F1A 2x 5 0 A FRD GT250101 @ TO-3P(L) MG2501BS1 2-33F1A GT50Q101 @ IH


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PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG400Q1US11 MG50J6ES40 MG75J2YS40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
S5J53

Abstract: S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
Text: ) TO-220 (SM) TO-3P (N) TO-3P (L) Remarks GT8J101 GT8J102 (SM) GT15J101 GT15J102 GT15J103 (SM


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PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: GT60M105 GT60M301 GT60M302 GT60M305 GT60M322 GT60N323 GT80J101 GT80J101A GT8J101 GT8J102 GT8N101


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PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
s5j53

Abstract: S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
Text: switching Applications 900 900 900 900 900 900 600 600 GT8J101 GT8J102 GT8N101 GT8Q101


Original
PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
Text: applications Audio amp applications 80 TO-3P(L) GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101


Original
PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: GT60M301 GT60M302 GT60M305 GT60M322 GT60N323 GT80J101 GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101


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PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: TO-3P(L) GT80J101A GT8J101 GT8J102 GT8N101 GT8Q101 GT8Q102 GT10Q311 GT15J101 GT15J102


Original
PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: GT8J101 GT8J102 GT8N101 GT8Q101 GT8Q102 GT10Q311 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101


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PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: No file text available


Original
PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
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