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Toshiba America Electronic Components
GT60M303(Q) Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-3P(LH) GT60M303(Q) ECAD Model
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GT60M303 datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
GT60M303 GT60M303 ECAD Model Toshiba Discrete IGBTs Original PDF
GT60M303 GT60M303 ECAD Model Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Original PDF
GT60M303 GT60M303 ECAD Model Toshiba Discrete IGBTs Original PDF
GT60M303 GT60M303 ECAD Model Toshiba Silicon N-channel MOS type insulated gate bipolar transistor for high power switching applications Original PDF
GT60M303 GT60M303 ECAD Model Others N-channel iso-gate bipolar transistor (MOS technology) Scan PDF
GT60M303(Q) GT60M303(Q) ECAD Model Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 900V 60A 170W TO3P LH Original PDF

GT60M303 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - GT60M303

Abstract: GT60M303 application GT60M303 circuit
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector , GT60M303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP , 4.0 °C / W 2 2002-02-06 GT60M303 3 2002-02-06 GT60M303 4 2002-02-06 GT60M303 5 2002-02-06 GT60M303 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT60M303 GT60M303 GT60M303 application GT60M303 circuit
GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: , VGE = 15 V 2.6 GT50N322A(1000V ) 2.4 Ta = 125°C 2.2 VCE(sat) GT60M303 2.0 Ta = 25 , GT60M303 GT60M323 GT50N322A GT50N324 200 120 300 GT50J322 GT50J322H GT50J328 120 , 156 150 TO-3P(N) GT60M303 (V) tf Typ. @IC @VGE (A) (V) (s) 2.1 50 15 , ) TO-3P(L) ­ GT60M303 ­ GT60M303 GT40Q321 GT40Q321 ­ GT40T302 GT60M303 GT60M303 ­ ­ ­ GT80J101B GT60J321 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303


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PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
2001 - GT60M303

Abstract: TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and , GT60M303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP , 4.0 °C / W 2 2001-06-07 GT60M303 3 2001-06-07 GT60M303 4 2001-06-07 GT60M303 5 2001-06-07 GT60M303 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT60M303 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C
2007 - GT60M303 application

Abstract: GT60M303 gt60m303 application notes
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH , rate, etc). EQUIVALENT CIRCUIT MARKING Part No. (or abbreviation code) TOSHIBA GT60M303 , 2006-11-01 GT60M303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , Rth (j-c) Diode 4.0 °C / W 2 2006-11-01 GT60M303 3 2006-11-01 GT60M303 4 2006-11-01 GT60M303 5 2006-11-01 GT60M303 RESTRICTIONS ON PRODUCT USE


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PDF GT60M303 GT60M303 application GT60M303 gt60m303 application notes
TOSHIBA IGBT GT60M303

Abstract: GT60M303 IGBT 900v 60a GT60M303 application 2-21F2C
Text: GT60M303 NIGBT GT60M303 : mm 4 FRD IGBT : tf=0.25s () (IC=60A) FRD : trr=0.7s () (di / dt=20A /s) VCE (sat)=2.1V () (IC=60A) (Ta , : (//) ( / ) () () () TOSHIBA GT60M303 No. JAPAN (: : ) 1 2006-10-31 GT60M303 (Ta , / W 2 2006-10-31 GT60M303 3 2006-10-31 GT60M303 4 2006-10-31 GT60M303 5 2006-10-31 GT60M303 20070701-JA · · " " · · ·


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PDF GT60M303 2-21F2C 20070701-JA TOSHIBA IGBT GT60M303 GT60M303 IGBT 900v 60a GT60M303 application 2-21F2C
2004 - GT60M303

Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector , Part No. (or abbreviation code) TOSHIBA GT60M303 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 GT60M303 ELECTRICAL CHARACTERISTICS (Ta , GT60M303 3 2004-07-06 GT60M303 4 2004-07-06 GT60M303 5 2004-07-06 GT60M303


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PDF GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
GT60M303 application

Abstract: GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and , GT60M303 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60M303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , GT60M303 3 2006-11-01 GT60M303 4 2006-11-01 GT60M303 5 2006-11-01 GT60M303


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PDF GT60M303 GT60M303 application GT60M303
VQE 22

Abstract: sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS • The 4th Generation • FRD Included Between Emitter and , GT60M303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ max. UNIT , 1997-08-22 2/5 TOSHIBA GT60M303 IC - VCE VCE - VGE COMMON EMITTER Tc = 25°C 20/ 10 9.5 , TOSHIBA GT60M303 20 16 VCE, VGE - QG / COMMON EMITTER RL = 2.5fl Te = 25°C \ 150 V


OCR Scan
PDF GT60M303 VQE 22 sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
s5j53

Abstract: S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
Text: trade-off. 4th Generation( GT60M303 ) 2 1.8 0.12 0.2 0.28 0.36 tf (µs) 0.44 35 0.52 , ) products 5 10 15 20 GT60M302 GT60M303 GT60M323(*) GT60N321 GT40Q321 10 20 30 40 60 100 , -3P (LH) GT60M303 900 V / 60 A I 0.4 2.7 15 V / 60 A TO-3P (LH) GT60M323 100 V , Product GT60M303 GT40T301 ­ GT60M303 GT60M303 GT60M303 GT40T301 GT40T101 GT40T301 GT40T101 GT40T301 GT40T101 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT50J102 GT80J101A


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PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: ): GT60M303 2.0 Ta = 25°C 1.8 NEW 1.6 GT60M324 1.4 0 0.1 0.2 0.3 0.4 0.5 0.6 , 300 Plasma display panels GT60M303 GT60M323 GT60M324 GT50N322A GT50N324 GT60N322 GT60N321 , ) Fast switching Fast switching R GT50M322 GT60M303 TO-3P(N) 900 Fast switching TO , Maximum Ratings Recommended Obsolete Replacements VCES (V) IC (A) DC ­ GT60M303 ­ GT60M303 GT40Q321 GT40Q321 ­ GT40T302 GT60M303 GT60M303 ­ ­ ­ GT80J101B GT60J321 GT60M303 GT60M303


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PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
2006 - GT60M303 application

Abstract: GT60M303 circuit igbt failure rate
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER , abbreviation code) TOSHIBA GT60M303 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60M303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , 2 2006-11-01 GT60M303 3 2006-11-01 GT60M303 4 2006-11-01 GT60M303 5 2006-11-01 GT60M303 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to


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PDF GT60M303 GT60M303 application GT60M303 circuit igbt failure rate
GT60M303

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT60M303 SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between , contained herein is subject to change w ith out notice. 1997 08-22 - 1/5 TOSHIBA GT60M303 , > O M l < o P3 ID ^ sl I 0 E M IT T E R GT60M303 00 < o hJ N J U J U 1 1 TOSHIBA GT60M303 SWITCHING TIME - Rg > o X > C OM M ON E M IT T E R V c c = 600V IC = 60A V G E =


OCR Scan
PDF GT60M303 25//s GT60M303
Not Available

Abstract: No abstract text available
Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between , TOSHIBA GT60M303 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Gate Leakage , < O O E J r O H < O H GT60M303 ^ sl I (V) g M H Vq e TOSHIBA GT60M303 SWITCHING TIME - Rg > o COMMON EMITTER V c c = 600V IC = 60A X > ÜO


OCR Scan
PDF GT60M303 25//s
GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
Text: Generation ( GT60M303 ) 2 1.8 0.12 0.2 0.28 0.36 tf (µs) 0.44 35 0.52 1200 V (1 , GT15M321 GT60M303 GT60M323 GT60M322 GT50N321 GT60N322 GT60N321 GT40Q323 GT40Q321 GT40T301 170 , Switching) IGBT AC Input Voltage VCES / IC GT15M321 900 V / 15 A GT60M303 900 V / 60 A , Equivalent Product GT40T301 GT60M303 - GT60M303 GT40T301 GT60M303 GT60M303 GT40T301 GT40T301 GT40T301 GT50J102 GT60J321 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M303 GT60M322A


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PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
2fy transistor

Abstract: RJ 0822 R K J 0822
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT60M303 SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS · · · · The 4th Generation FRD Included Between E m itter and , herein is su b je ct to ch a n g e w ith o u t notice. 1997 08-22 - 1/5 TOSHIBA GT60M303 , /W 1997 08-22 - 2/5 TOSHIBA GT60M303 IC - VCE 10 VCE - Vge > w o COMMON , TOSHIBA GT60M303 > o ta a OO > > Vc e , vge - Qg SWITCHING TIME - R q ë Í OH Di f


OCR Scan
PDF GT60M303 2fy transistor RJ 0822 R K J 0822
GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: improved carrier lifetime control techniques. Soft-Switching 900-V IGBT (Example: GT60M303 vs. GT60M323 , 10 GT60M323 2 GT60M303 20 GT60M323 4th Gen. GT60M303 0.25(s), 2.1(V) Typ. 30 GT60M303 2.5 Power Loss (W) VCE(sat) (V) 3 5th Gen. GT60M323 0.09(s), 2.3(V) Typ. 1.5 0 , 4 Example GT15M321 GT50M322 GT60M303 GT60M323 GT50N322A GT60N322 GT60N321 GT60N323 , 50 GT60M303 AC 100 V Fast switching TO-3P(N) GT40J322 GT50J322 Remarks (s


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PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
2000 - GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: 75 2.4 2.2 Trench( GT60M303 ) 2 Toshiba is also working on an intelligent power device (IPD , GT80J101A 80A Under development (GT60N321 ) GT60M303 GT60M302 GT60M301 GT60M104 60A , GT60M301 900 V / 60 A GT60M302 100 V to 120 V max 900 V / 60 A GT60M303 900 V / 60 A , ) GT60M303 900 60 3.4 0.40 TO-3P (LH) GT50M101 900 50 5.0 0.40 TO-3P (LH) GT60M303 900 60 3.4 0.40 TO-3P (LH) GT50Q101 1200 50 4.0 0.50 IH Package


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PDF
GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: (sat): GT60M303 2.0 Ta = 25°C 1.8 NEW 1.6 GT60M324 1.4 0 0.1 0.2 0.3 0.4 , 430 GT60M303 GT60M323 GT50N322A GT50N324 120 400 GT50J322 GT50J322H GT50J328 30 , 2.1 Load (*2) 0.25 GT50J322H GT60M303 Fast switching TO-3P(N) TO-3P(LH) Fast , Obsolete Replacements VCES (V) IC (A) DC ­ ­ ­ 900 60 GT60M303 ­ ­ ­ 900 60 GT60M303 1200 42 GT40Q321 1200 42 GT40Q321 ­ ­ ­ 1500 40 GT40T302 900 60 GT60M303 900 60 GT60M303


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PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Sine wave PWM DC to AC Inverter ics

Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an ta7606p HIGH VOLTAGE DIODE for microwave ovens induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
Text: for Induction Heating Cooking Appliances and Microwave Ovens Device IC (A) GT60M303 GT40T 101 , AC line Ratings VCES = 900 V IC = 60 A Doubletransistor current resonance GT60M303 , GT60M303 VCES = 600 V IC = 50 A GT30J322 GT50J322 Discrete IGBT for Inverters (Built-in FWD


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PDF TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F TA7327P SSOP10 GT60M303 Sine wave PWM DC to AC Inverter ics ULN2803 PIN CONFIGURATION TA8316S tc9653an ta7606p HIGH VOLTAGE DIODE for microwave ovens induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
GT30J322

Abstract: MP6750 MG200Q2YS40 MG75J2YS50 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: GT50J301 GT60M104 GT60M301 GT60M302 GT60M303 GT40M301 GT40M101 GT60N321 GT40T101 GT40T301 , GT60M303 900 V/60 A 0.4 2.7 15 V/60 A TO-3P (LH) GT60N321 100~120 V 900 V/15 A 1000 , GT60M301 GT60M302 GT60M303 1000 1200 GT60N321 GT10Q301 GT15Q301 *GT10Q311 GT25Q301


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PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 TPCA*8023 GT30F123 GT50N322
Text: No file text available


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PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 TPCA*8023 GT30F123 GT50N322
2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent 2SC5386 equivalent equivalent 2SC5200 2Sc5588 equivalent
Text: MG400J1US51 2 US GT15M321 (900 V) 1000 GT60M302 GT60M303 (900 V / 60 A) GT60N321 (60 A) GT25Q301


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PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent 2SC5386 equivalent equivalent 2SC5200 2Sc5588 equivalent
GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
Text: No file text available


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PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 GT45F123 MARKING SMD PNP TRANSISTOR h2a gt35j321 GT45F122 GT45f122 Series gt30f122
Text: No file text available


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PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 GT45F123 MARKING SMD PNP TRANSISTOR h2a gt35j321 GT45F122 GT45f122 Series gt30f122
GT30J124

Abstract: gt45f122 smd transistor h2a TPCP8R01 GT30F123 smd marking 8L01 2sc1815 smd type h2a smd 2sc5200 amplifiers circuit diagram 2SC5471
Text: No file text available


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PDF SCE0004I SC-43) 2SC1815 GT30J124 gt45f122 smd transistor h2a TPCP8R01 GT30F123 smd marking 8L01 2sc1815 smd type h2a smd 2sc5200 amplifiers circuit diagram 2SC5471
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