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Toshiba America Electronic Components
GT50JR22(STA1,E,S) TOSGT50JR22(STA1,E,S) IGBT FOR SOFT SWIT (Alt: GT50JR22(STA1,E,S))
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Avnet GT50JR22(STA1,E,S) 120 16 Weeks, 2 Days 1 €2.59 €2.39 €2.09 €1.89 €1.89 Buy Now
Chip1Stop GT50JR22(STA1,E,S) 50 5 - $10.9 $9.35 $9.35 $9.35 Buy Now
New Advantage Corporation GT50JR22(STA1,E,S) 86 86 - - $3.22 $3.45 $3.45 Buy Now
Toshiba America Electronic Components
GT50JR22 IGBT N-CH 600V 50A ENHANCEMENT TO3PN, TU
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RS Components (2) GT50JR22 Tube 425 10 - £2.52 £2.46 £2.38 £2.38 Buy Now
GT50JR22 Bulk 126 1 £3.95 £2.52 £2.46 £2.38 £2.38 Buy Now

GT50JR22 datasheet (2)

Part Manufacturer Description Type PDF
GT50JR22 Toshiba Transistors Original PDF
GT50JR22 Toshiba Japanese - Transistors Original PDF

GT50JR22 Datasheets Context Search

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GT50JR22

Abstract: IGBT control circuit
Text: GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 1. Applications · Dedicated to , Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) 1 2012-10-15 Rev.1.0 GT50JR22 4 , thermal resistance Symbol Rth(j-c) Max 0.65 Unit /W 2 2012-10-15 Rev.1.0 GT50JR22 6. Electrical , care. 3 2012-10-15 Rev.1.0 GT50JR22 8. Characteristics Curves (Note) Fig. 8.1 IC - VCE , Switching Time - IC 4 2012-10-15 Rev.1.0 GT50JR22 Fig. 8.7 Switching Time - RG Fig. 8.8 rth


Original
PDF GT50JR22 GT50JR22 IGBT control circuit
Not Available

Abstract: No abstract text available
Text: GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 1. Applications • Dedicated to , TO-3P(N) 1 2012-10-15 Rev.1.0 GT50JR22 4. Absolute Maximum Ratings (Note) (Ta = 25î , 0.65 /W 2012-10-15 Rev.1.0 GT50JR22 6. Electrical Characteristics 6.1. Static , .1.0 GT50JR22 8. Characteristics Curves (Note) Fig. 8.1 IC - VCE Fig. 8.2 IC - VCE Fig. 8.3 IC - VCE , .1.0 GT50JR22 Fig. 8.7 Switching Time - RG Fig. 8.9 Safe Operating Area (Guaranteed Maximum) Note


Original
PDF GT50JR22
2003 - Not Available

Abstract: No abstract text available
Text: GT50JR22 ディスクリートIGBT シリコンNチャネルIGBT GT50JR22 1. 用途 â , 2012-10-15 Rev.1.0 GT50JR22 4. çµ¶å¯¾æœ€å¤§å®šæ ¼ (注) (特に指定のない限り, Ta = 25) (æ , €Œ/W 2012-10-15 Rev.1.0 GT50JR22 6. 電気的特性 6.1. 静的特性 (特に指定のないé , 2012-10-15 Rev.1.0 GT50JR22 8. 特性図 (注) (注 図 8.1 IC - VCE 図 8.2 IC - VCE 図 8.3 , 2012-10-15 Rev.1.0 GT50JR22 図 8.7 スイッチング時間 - RG 図 8.8 rth(j-c) - tw (最大å


Original
PDF GT50JR22
2014 - Not Available

Abstract: No abstract text available
Text: GT50JR22 Discrete IGBTs Silicon N-Channel IGBT GT50JR22 1. Applications • Dedicated , .2.0 GT50JR22 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) 25î , .2.0 GT50JR22 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25, unless otherwise , discharge and should be handled with care. 3 2014-01-06 Rev.2.0 GT50JR22 8. Characteristics , Fig. 8.5 IC - VGE Fig. 8.6 Switching Time - IC 4 2014-01-06 Rev.2.0 GT50JR22 Fig. 8.7


Original
PDF GT50JR22
gt50jr22

Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
Text: TK39N60X TK62N60X TK62N60X TK100L60W GT50JR22 GT50JR22 SiC Schottky Barrier Up to 300


Original
PDF SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
fast tlp785

Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
Text: , GT50JR22 * TLP701H, TLP351H, TLP155E TLP701H, TLP351H, TLP155E TLP700H, TLP352 TLP358H


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PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH
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