GT30J121 Search Results
GT30J121 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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GT30J121 |
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Insulated Gate Bipolar Transistor Silicon N Channel IGBT | Original | |||
GT30J121 |
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Discrete IGBTs | Original | |||
GT30J121 |
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High-Speed IGBTs | Original | |||
GT30J121(Q) |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 170W TO3PN | Original |
GT30J121 Price and Stock
Toshiba America Electronic Components GT30J121(Q)IGBT 600V 30A 170W TO3PN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT30J121(Q) | Tray | 157 | 1 |
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Buy Now | |||||
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GT30J121(Q) | Tube | 53 Weeks, 1 Days | 100 |
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Buy Now | |||||
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GT30J121(Q) | 45 |
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Buy Now | |||||||
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GT30J121(Q) | 70 | 1 |
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Buy Now |