The Datasheet Archive

GT25J101 datasheet (6)

Part ECAD Model Manufacturer Description Type PDF
GT25J101 GT25J101 ECAD Model Toshiba Discrete IGBTs Original PDF
GT25J101 GT25J101 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GT25J101 GT25J101 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
GT25J101 GT25J101 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
GT25J101 GT25J101 ECAD Model Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Scan PDF
GT25J101 GT25J101 ECAD Model Toshiba N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

GT25J101 Datasheets Context Search

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gt25j101

Abstract: 2-16C1C IGBT GT25J101
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 f' w i HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS T ? wmr R v i i m ^ht Unit in mm 15.9MAX 53.2 ± 0.2 · · · · High Input Impedance High Speed : tf=0.35/^s (Max.) 2.0 ±0.3 + 0.3 1 .0 - 0 .2 5 m Low Saturation Voltage ; VQE (sat)~4,0V (Max,) Enhancement-Mode , ) GT25J101 TOSHIBA GT25J101 SWITCHING TIME - Ic SWITCHING TIME - R q COLLECTOR CURRENT Ic


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PDF GT25J101 gt25j101 2-16C1C IGBT GT25J101
Not Available

Abstract: No abstract text available
Text: TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 G T 2 5 J 1 01 HIGH PO W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIO NS 1 5.9 M A X ^ 3 2 Í 0.2 U n it in mm · · · · H ig h In p u t Im pedance H ig h Speed : tf= 0.35^s (M ax.) M , s u b je ct to c h a n g e w it h o u t n otice. # # 230 TOSHIBA GT25J101 i c - , COLLECTOR VOLTAGE VG E TOSHIBA GT25J101 SWITCHING TIME - le SWITCHING TIME - R q COMMON


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PDF GT25J101
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 G T 2 5 J 1 01 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1 5.9M A X Unit in mm V , < GT25J101 1 0 N 1J O GATE-EMITTER VOLTAGE V g e (V) TO SH IBA GT25J101 SWITCHING TIME - Iq SWITCHING TIME - Rq COMMON EMITTER VCC = 300V VGG= ± , ) COLLECTOR-EMITTER VOLTAGE V q e (V) 3 2 00 2 - 02-06 TO SH IBA GT25J101 RESTRICTIONS ON PRODUCT USE


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PDF GT25J101 2-16C1C
IGBT GT25J101

Abstract: GT25J101
Text: TOSHIBA GT25J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J1 01 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf=0.35,«s (Max.) • Low Saturation Voltage : Vqe (sa^) = 4.0V (Max.) • Enhancement-Mode , to change without notice. 1997-02-03 1/3 TOSHIBA GT25J101 IC - VCE VCE - VGE 80 60 40 20 , GT25J101 switching time - iq switching time - rq 0.5 0.3 0.1 0.05 COMMON EMITTER Vcc = 300V, Tc =


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PDF GT25J101 GT25J1 2-16C1C IGBT GT25J101 GT25J101
IGBT GT25J101

Abstract: GT25J101
Text: TOSHIBA GT25J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J1 01 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed , TOSHIBA GT25J101 IC - VCE VCE - VGE COMMON EMITTER Tc = 25°C 20 15 , TOSHIBA GT25J101 switching time - iq switching time - rq 0.5 0.3 0.1 0.05 COMMON EMITTER Vcc = , COLLECTOR-EMITTER VOLTAGE VQE (V) 3 2001-05-24 TOSHIBA GT25J101 RESTRICTIONS ON PRODUCT USE _000707E â


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PDF GT25J101 GT25J1 2-16C1C IGBT GT25J101 GT25J101
Not Available

Abstract: No abstract text available
Text: TOSHIBA GT25J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 2 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • 1 5 .9 M A X High Input Impedance High Speed : tf=0.35/*s (Max.) Low Saturation Voltage : VGE (sat) = 4-0V (Max.) Enhancement-Mode }S3.2 + 0 .2 m C) 2 .0 ± 0 . 3 + , s o r £ P3 O < O H GT25J101 TOSHIBA GT25J101 SWITCHING TIME - Ic


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PDF GT25J101 150TTER
Not Available

Abstract: No abstract text available
Text: n io o n h MS 0 J I - * -15V At Vcc = 300 V 0.35 1.00 94 GT25J101 < C J , COLLKCTOR VOLTAGE GT25J101 SWITCHING TIME Ic SWITCHING TIME C O M M O N EMITTER (»·) VC C = 3 0 0 V


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PDF 2-16C1C
LT-15V

Abstract: No abstract text available
Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25J101 Unit in m m HIGH P O W E R S W I T C H I N G A P P L I C A TIO NS. M O T O R C O N TR OL A P P L I C ATI ONS . 15.9 MAX . High Input Impedance : t f = 0 . 35lis(Max.) : V c E ( s a t ) = 4 · O V ( M a x .) . High Speed . Low Saturation Voltage . Enhancement-Mode 0 3 .2 ± O .2 TT M A X I M U M RATI NGS (Ta=25° C , 100ÍX 1 lei p - Ms LT-15V VC C = 3 0 0 V - 577 GT25J101 I c - VCE ^ CE " VGE


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PDF GT25J101 35lis 5000i LT-15V
Not Available

Abstract: No abstract text available
Text: TOSHIBA TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT GT25J101 G T 2 5 J 1 01 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X Unit in mm ?S3.2 + 0 .2 · · · · High Input Impedance High Speed : tf=0.35/*s (Max.) Low Saturation Voltage : VGE (sat) = 4-0V (Max.) Enhancement-Mode CHARACTERISTIC Colleetor-Emitter Voltage Gate-Emitter , c r O H § GT25J101 TOSHIBA GT25J101 SWITCHING TIME - Ic


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PDF GT25J101
GT80J101

Abstract: MG150Q1JS mg100j6es5 MG150Q2YS40 MG300Q2YS40 MG15J6ES40 GT60M301 MG75J6ES50 MG100Q2YS42 MG360V1US41
Text: . 88-90 GT15Q101 . . 91-93 GT25J101 . . 94-96 GT25Q101


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PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG150Q1JS mg100j6es5 MG150Q2YS40 MG300Q2YS40 MG15J6ES40 GT60M301 MG75J6ES50 MG100Q2YS42 MG360V1US41
GT30J322

Abstract: MP6750 MG200Q2YS40 MG75J2YS50 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: GT25J101 GT20J301 GT20J311 GT15J101 GT15J102 GT15J103 (SM) GT10J301 GT10J311 GT15Q101 GT10Q301 , 15 70 3.0 15 0.15 TO-220 (SM) GT25J101 600 25 150 3.0 25 0.15 , (SM) *GT20J101 GT15J103 (SM) GT25J101 GT25J102 *GT30J101 900 GT50J102 GT60M104


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PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 (SM) GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101 GT25G101 (SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GT25Q301 GT30J301 GT30J311 GT40M101 GT40M301 GT40T101 GT5G101 GT5G103 GT50J102 GT50J301 GT60M104 GT60M301 GT60M302 GT8G101 GT8J101 GT8J102 (SM) GT8Q101 GT8Q102 (SM) GT80J101 Page 163 166


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PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
2000 - GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: GT30J101 GT30J311 GT25J101 GT20J301 GT20J101 GT20J311 GT15J301 GT15J311 GT15J101 GT15J102 , No. GT8J101 GT8J102 GT15J101 GT15J102 GT15J103 GT25J101 GT25J102 GT8Q101 GT8Q102 GT15Q101 , 0.50 TO-3P (N) GT25H101 500 25 4.0 1.00 TO-3P (N) GT25J101 600 25 4.0


Original
PDF
Not Available

Abstract: No abstract text available
Text: GT25J101 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed SILICON N CHANNEL IGBT Unit in mm 15.9MAX #3.2±0.2 : tf=0.35ys(Max.) . Low Saturation Voltage : VcE(sat)=¿*·0V(Max.) . Enhancement-tlode m +0 . 3 1.0-0.25 / H o ©I © MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC Ins Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature SYMBOL VCES


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PDF GT25J101
MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400J2YS40 MG400Q1US11 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Text: 600 800 600 GT8J102(SM) T0-220(SM) GT15J101 @ GT25J101 @ TO-3P(N) TO-3P(N) GT15J102 T0


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PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400J2YS40 MG400Q1US11 MG150J2YS40 MG200Q2YS1 MG200J2YS45
2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Text: ) GT20G102 GT20G102(SM) GT25G101 GT25G101(SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GTS0J102 GT50J301


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PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG400Q1US11 MG50J6ES40 MG75J2YS40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: GT15Q101 @ TO-3P(N) 25 GT25J101 @ TO-3P(N) 50 GT50J101 @ TO-3P(L) 60/200 80/300 400 500


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PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG400Q1US11 MG50J6ES40 MG75J2YS40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
S5J53

Abstract: S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
Text: } GT25J101 GT8Q101 GT8Q102 GT15Q101 GT25Q1Û1 - - 18 TOSHIBA [ 2 1 Introduction · Th ird


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PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: GT25J101 GT25J102 GT25Q101 GT30J311 GT50J101 GT5G101 GT5G102 GT5G103 GT8G101 GT8G102 GT8G103


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PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 2SK584 BD137NP GT15N101 GT15Q101 2SK590 BD138NP GT25H101 GT25J101


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PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
s5j53

Abstract: S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
Text: GT8Q102 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101 GT25H101 GT25J101 GT25J102 GT25Q101


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PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
Text: GT8Q102 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101 GT25H101 GT25J101 GT25J102 GT25Q101


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PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: GT15J103 GT15N101 GT15Q101 GT15Q311 GT20J311 GT25H101 GT25J101 GT25J102 GT25Q101 GT30J311


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PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: GT15Q311 GT20J311 GT25H101 GT25J101 GT25J102 GT25Q101 GT30J311 GT50J101 GT5G101 GT5G102 GT5G103


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PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: GT25J101 GT25J102 GT25Q101 GT30J311 GT50J101 GT5G101 GT5G102 GT5G103 GT8G101 GT8G102 GT8G103


Original
PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
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