The Datasheet Archive

GT25G102 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
GT25G102 GT25G102 ECAD Model Toshiba TRANS IGBT CHIP N-CH 400V 25A 3(2-10S1C) Original PDF
GT25G102 GT25G102 ECAD Model Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Original PDF
GT25G102 GT25G102 ECAD Model Toshiba Discrete IGBTs Original PDF
GT25G102 GT25G102 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GT25G102(SM) GT25G102(SM) ECAD Model Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
GT25G102(SM) GT25G102(SM) ECAD Model Toshiba N-channel IGBT, 400V, 25A Original PDF
GT25G102SM GT25G102SM ECAD Model Toshiba IGBT Original PDF
GT25G102SM GT25G102SM ECAD Model Toshiba N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Scan PDF

GT25G102 Datasheets Context Search

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2001 - GT25G102

Abstract: No abstract text available
Text: GT25G102 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 (SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL , Thermal Resistance VGE (OFF) Rth (j-c) 1 µs °C / W 2001-06-06 GT25G102 (SM) 2 2001-06-06 GT25G102 (SM) 3 2001-06-06 GT25G102 (SM) RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF GT25G102 2-10S2C
2001 - GT25G102

Abstract: No abstract text available
Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE (sat) = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement-Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , Thermal Resistance Rth (j-c) 1 µs °C / W 2001-06-06 GT25G102 2 2001-06-06 GT25G102 3 2001-06-06 GT25G102 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT25G102 2-10S1C GT25G102
2001 - GT25G102

Abstract: No abstract text available
Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 150A) Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL , Thermal Resistance Rth (j-c) 1 µs °C / W 2001-06-06 GT25G102 2 2001-06-06 GT25G102 3 2001-06-06 GT25G102 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT25G102 2-10S1C GT25G102
lr4080

Abstract: GT25
Text: TOSHIBA GT25G102 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G10 2(S M) STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode • 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) : VCE(sat) = 8V (Max.) (IC = 150A) CHARACTERISTIC SYMBOL , GT25G102 (SM) IC - VCE VCE - VGE 0 12 -LU COMMON EMITTER Te =25°C 14 ,t / i 8 , by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA GT25G102 (SM) C - Ve E VCE, VGE - QG


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PDF GT25G102 GT25G10 2-10S2C lr4080 GT25
TOSHIBA IGBT

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25G102 G T ? R fì SILICON N-CHANNEL IGBT 1n? Unit in mm 10.3MAX STROBE FLASH APPLICATIONS · · · · High Input Impedance Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 150A) Enhancement-Mode 12V Gate Drive CHARACTERISTIC , o < £ O r £ g § ID o SJ < £ > I 0 Ni o M o w GT25G102 1 O UJ IS J UJ TOSHIBA GT25G102 C - VCE VCE, VGE - QG GATE CHARGE Qq (nC


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PDF GT25G102 2-10S1C TOSHIBA IGBT
2001 - GT25G102

Abstract: No abstract text available
Text: GT25G102 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 (SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage:VCE (sat) = 8V (Max.) (IC = 150A) l Enhancement-Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , Thermal Resistance VGE (OFF) Rth (j-c) 1 µs °C / W 2001-06-06 GT25G102 (SM) 2 2001-06-06 GT25G102 (SM) 3 2001-06-06 GT25G102 (SM) RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF GT25G102 2-10S2C
Not Available

Abstract: No abstract text available
Text: GT25G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 150A) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Emitter Voltage VCES Gate-Emitter , o< HI GT25G102


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PDF GT25G102
G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 (SM) GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101 GT25G101 (SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GT25Q301 GT30J301 GT30J311 GT40M101 GT40M301 GT40T101 GT5G101 GT5G103 GT50J102 GT50J301 GT60M104 GT60M301 GT60M302 GT8G101 GT8J101 GT8J102 (SM) GT8Q101 GT8Q102 (SM) GT80J101 Page 163 166


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PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Not Available

Abstract: No abstract text available
Text: TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 GT2 5 G 102 STROBE FLASH APPLICATIONS U nit in mm · · · · H igh Input Impedance Low Saturation Voltage : VQ E(say = 8V (Max.) (Ic = 150A) Enhancement-Mode 12V Gate Drive CHARACTERISTIC , is sub ject to c h a n g e w it h o u t notice. # 0 224 TOSHIBA GT25G102 IC - VCE , 225 TOSHIBA GT25G102 V C E VCE, V q e - QG SW ITC H IN G TIM E - R q 1 1 SW ITC H


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PDF GT25G102 2-10S1C
Not Available

Abstract: No abstract text available
Text: TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR GT25G102 (SM) SILICON N-CHANNEL IGBT G T 2 5 G 1 0 2 ( S M ) STROBE FLASH APPLICATIO NS U n it in mm · · · · High Input Impedance Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode 12V Gate Drive SYMBOL VCES DC 1ms Ta = 25°C Tc = 25°C vqes MAXIM UM RATINGS (Ta = 25 , (A) V c e (sat) - Tc COLLECTOR CURRENT 02 [z] ñ ° « 2 228 TOSHIBA GT25G102 (SM


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PDF GT25G102 2-10S2C GT25G1Q2
Not Available

Abstract: No abstract text available
Text: SILICON N CHANNEL MOS TYPE GT25G102 (SM) Unit in nn STROBE FLASH APPLICATIONS . High Input Impedance . Low Saturation Voltage : Vcg(sat)= &V(Max.) (Ic=150A) · Enhancement-Mode . 12V Gate Drive 10.3MAX 132, MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Enitter Voltage DC Collector Current 1ms Collector Potier Dissipation Junction Tenperature Storage Tenperature Range , GT25G102 (SM) COLLECTOR CURRENT ê g § (A ) COLLECTOR-EM ITT HR VOLTAGE V(:E (V I COLLECTOR


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PDF GT25G102
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 STROBE FLASH APPLICATIONS · · · · High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 150A) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Emitter Voltage VCES Gate-Emitter Voltage VGES DC ic Collector Current 1ms !CP Collector Power Ta = 25 , M x> Q < O H < o H 1 td O o JO 1998 09-28 - GT25G102 3/3 GATE-EMITTER


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PDF GT25G102
GT25G102

Abstract: No abstract text available
Text: TOSHIBA GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode • 12V Gate Drive : VCE(sat) = 8V (Max.) (IC = 150A) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , 1/3 TOSHIBA GT25G102 IC - VCE VCE - VGE 200 160 120 80 40 12 14 / // 1 / / â , TEMPERATURE Tc (°C) 1998-09-28 2/3 TOSHIBA GT25G102 C - VCE VCE, VGE - QG


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PDF GT25G102 GT25G102
Not Available

Abstract: No abstract text available
Text: T O S H IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25G102 (SM) SILICON N-CHANNEL IGBT GT25G102 (S M ) STROBE FLASH APPLICATIONS Unit in mm · · · · High Input Impedance Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 150A) Enhancement-Mode 12V Gate Drive CHARACTERISTIC , COLLECTOR-EMITTER VOLTAGE Vq K (V) GATE -EMITTER VOLTAGE V qe (V) GT25G102 (SM) T O S H IB A GT25G102 (SM) C - VCE VCE, VGE - QG GATE CHARGE Q COLLECTOR-EMITTER VOLTAGE V q e (V) 30 10 s El


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PDF GT25G102 2-10S2C 2T25G102
Not Available

Abstract: No abstract text available
Text: GT25G102 ST R O B E F L A S H A P P L I C A T I O N S . High Input Impedance . Low Saturation Voltage . Enhancement-Mode . 1 2 V G a t e D r ive SILICON N CHANNEL MOS TYPE Unit in mm 10.3 MAX -rt: V c E ( s a t ) = 8 V ( M a x . ) (Ic=150A) n 0.76 H A X I M U M R A T I N G S (Ta=25°C) CHARACTERISTIC Collector-Enitter Voltage Gate-Enitter Voltage C o l l e c t o r C u r rent C o l l e c t o r P o , ( V ) GATE-EMITTER VOLTAGE VG E GT25G102 (V) GT25G102 GATE-EMITTER VOLTAGE V0E (V


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PDF GT25G102
s5j53

Abstract: S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
Text: 1200 GT25G101 GT25G101 GT30J322 30 High rugged products GT25G102 GT25G102 100 15 , Package Remarks 12 V Gate Drive Series Product No. VCES / IC GT25G102 400 V / 130 A VCE , GT25G102 GT25G101 GT25G101 GT25G102 GT25G101 GT25G102 GT25G101 Maximum Ratings VCES (V) 900


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PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Text: ) GT20G102 GT20G102(SM) GT25G101 GT25G101(SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GTS0J102 GT50J301


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PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Not Available

Abstract: No abstract text available
Text: GT25G102 (SM) T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 150A) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Emitter Voltage VCES Gate-Emitter Voltage , EMITTER VOLTAGE V qe (V) GT25G102 (SM) - 1998 09-28 JO a


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PDF GT25G102 GT25G1
transistor SM 200

Abstract: 12V1 GT25G102 12V11 GT25
Text: TOSHIBA GT25G102 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G10 2(S M) STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode • 12V Gate Drive : VCE(sat) = 8V (Max.) (IC = 150A) MAXIMUM RATINGS (Ta = 25 , contained herein is subject to change without notice. 1998-09-28 1/3 TOSHIBA GT25G102 (SM) IC - VCE VCE , 20 60 100 140 180 CASE TEMPERATURE Tc (°C) 1998-09-28 2/3 TOSHIBA GT25G102 (SM) C - VCE VCE, VGE


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PDF GT25G102 GT25G10 transistor SM 200 12V1 12V11 GT25
GT30J322

Abstract: MP6750 MG200Q2YS40 MG75J2YS50 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: 40 (A) GT30J301 GT30J311 25 GT25G101 GT25G102 20 GT20D101 GT20D201 15 GT20G101 , ) GT25G102 /(SM) 400 V/150 A 8 12 V/150 A 75 TO-220 (FL)/(SM) GT5G102/(LB) 400 V/130 A , GT20G101 GT25G101 GT40G121 GT20G101 (SM) GT25G101 (SM) 400 GT5G102 GT20G102 GT25G102 GT20G102 (SM) GT25G102 (SM) GT5G103 GT8G103 GT8G121 GT15J101 GT8J101 600 GT15J102 GT8J102


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PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25G102 (SM) SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS · · · · High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 150A) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Emitter Voltage VCES Gate-Emitter Voltage VGES DC ic Collector Current 1ms !CP Collector Power Ta = 25°C PC Dissipation Tc = 25°C PC Junction Temperature Tj Storage Temperature Range Tstg


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PDF GT25G102 GT25G1
S6A35

Abstract: SF3G42 SF10JZ47 S6785G 1R5GU41 SF3J42 S6A37 SCR S6A37 GT8G132 SF3J47
Text: (ICP) GT8G132 IGBT 150 A (ICP) GT5G131 170 A (ICP) GT25G101 150 A (ICP) GT25G102


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PDF AC100 1JU42 AC200 05NU42 CMS04, CMS05 5FWJ2CZ47M 5FWJ2C48M 10FWJ2CZ47M 10FWJ2C48M S6A35 SF3G42 SF10JZ47 S6785G 1R5GU41 SF3J42 S6A37 SCR S6A37 GT8G132 SF3J47
2000 - GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: 12V GT25G101 GT15G101 170A 150A 20V GT8G121 GT25G102 GT5G103 130A GT8G103 , GT20G102 400 V / 130 A 8 12 V / 130 A 60 TO-220FL GT25G102 400 V / 150 A 8 12 V


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PDF
GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
Text: GT15G101 GT20G101 GT20G102 GT25G102 GT50G101 GT50G102 GT75G101 GT20D101 GT20D201 400 400 400 , GT5G103 GT8G103 GT8G121 GT25G101 GT25G102 GT25G101 GT25G101 GT8G103 GT8G103 GT25G101 GT8G103


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PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
S5J53

Abstract: S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
Text: GT5G10I (LB) GT20G102 GT25G102 · 4 -V G ate Bias Series Product No. VCES/ICP 400 V / 130 A 4 0 0 V


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PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
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