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Toshiba Corporation
GT20G101 GT20G101 ECAD Model
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Bristol Electronics GT20G101 41 - - - - - More Info

GT20G101 datasheet (10)

Part ECAD Model Manufacturer Description Type PDF
GT20G101 GT20G101 ECAD Model Toshiba TRANS IGBT CHIP N-CH 400V 20A 3(2-10S1C) Original PDF
GT20G101 GT20G101 ECAD Model Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Original PDF
GT20G101 GT20G101 ECAD Model Toshiba Discrete IGBTs Original PDF
GT20G101 GT20G101 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GT20G101 GT20G101 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
GT20G101(SM) GT20G101(SM) ECAD Model Toshiba N-Channel IGBT Original PDF
GT20G101SM GT20G101SM ECAD Model Toshiba IGBT Original PDF
GT20G101SM GT20G101SM ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
GT20G101(SM) GT20G101(SM) ECAD Model Toshiba TRANS IGBT CHIP N-CH 400V 20A 3(2-10S2C) Scan PDF
GT20G101SM GT20G101SM ECAD Model Toshiba N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Scan PDF

GT20G101 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - GT20G101

Abstract: No abstract text available
Text: GT20G101 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 (SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , ) Rth (j-c) 1 µs °C / W 2001-06-06 GT20G101 (SM) 2 2001-06-06 GT20G101 (SM) 3 2001-06-06 GT20G101 (SM) RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT20G101 2-10S2C
GT20

Abstract: GT20G101
Text: TOSHIBA GT20G101 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 (SM) STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : Vqe (sat) = 8V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL , subject to change without notice. 1998-09-28 1/3 TOSHIBA GT20G101 (SM) IC - VCE VCE - VGE 160 120 0 , ) 180 1998-09-28 2/3 TOSHIBA GT20G101 (SM) C - VCE VCE, VGE - QG


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PDF GT20G101 2-10S2C GT20
2001 - GT20G101

Abstract: No abstract text available
Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL , Resistance VGE (OFF) Rth (j-c) 1 µs °C / W 2001-06-06 GT20G101 2 2001-06-06 GT20G101 3 2001-06-06 GT20G101 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT20G101 2-10S1C GT20G101
GT20G101

Abstract: No abstract text available
Text: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : Vqe (sat) = 8V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT , GT20G101 IC - VCE VCE - VGE 160 120 80 40 COMMON EMITTER Tc = 25°C 25, ,20 18 6 f , TOSHIBA GT20G101 C - VCE VCE, VGE - QG 1 3 5 10 30 50 100 300 500 1000 COLLECTOR-EMITTER VOLTAGE VQE


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PDF GT20G101 2-10S1C GT20G101
2001 - GT20G101

Abstract: No abstract text available
Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement-Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , Resistance VGE (OFF) Rth (j-c) 1 µs °C / W 2001-06-06 GT20G101 2 2001-06-06 GT20G101 3 2001-06-06 GT20G101 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT20G101 2-10S1C GT20G101
2001 - Not Available

Abstract: No abstract text available
Text: GT20G101 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 (SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25 , (j−c) ― 1 µs °C / W 2001-06-06 GT20G101 (SM) 2 2001-06-06 GT20G101 (SM) 3 2001-06-06 GT20G101 (SM) RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF GT20G101 10S2C
G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 (SM) GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101 GT25G101 (SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GT25Q301 GT30J301 GT30J311 GT40M101 GT40M301 GT40T101 GT5G101 GT5G103 GT50J102 GT50J301 GT60M104 GT60M301 GT60M302 GT8G101 GT8J101 GT8J102 (SM) GT8Q101 GT8Q102 (SM) GT80J101 Page 163 166


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PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
AFC5

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 riT ?n riim STROBE FLASH APPLICATIONS 10.3MAX Unit in mm 5.0 1.32 H- · · · · High Input Impedance Low Saturation Voltage : Vq e (sat)= ^V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive 1.6MAX , to change w itho ut notice. 1997 02-03 1/3 - TOSHIBA GT20G101 IC - V C E VCE - , VOLTAGE V q e (V) CASE TEMPERATURE Tc (°C) 1997 02-03 2/3 - TOSHIBA GT20G101 C - VCE u


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PDF GT20G101 AFC5
Not Available

Abstract: No abstract text available
Text: TOSHIBA GT20G101 (SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 (SM) STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage : Vqe (sat) = 8V (Max.) (Iq-130A) • Enhancement-Mode • 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING , GT20G101 (SM) IC - VCE VCE - VGE a S BS BS P o 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE GT20G101 (SM) C - VCE VCE, VGE - QG


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PDF GT20G101 GT20G101 Iq-130A) 2-10S2C TcS70Â RGS51Ã
Not Available

Abstract: No abstract text available
Text: GT20G101 (SM) T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive M A X IM U M , R < O R GT20G101 (SM) Ic p (A) SWITCHING TIM E (jus) CAPACITANCE C (pF) a , Q HI o < O P3 GT20G101 (SM)


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PDF GT20G101
2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Text: 1166 1169 1172 1175 1178 1181 1184 Type No. GTI5Q101 GT20D101 GT20D201 GT20G101 GT20G101 (SM


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PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SD2088 2SC3303 2SC4532 2SA1803 2sc4408 GT10G102 2S0635
Not Available

Abstract: No abstract text available
Text: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g ( s a t ) ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Collector-Emitter Voltage 400 , K < n P3 GT20G101 TOSHIBA GT20G101 C - VCE VCE, V g e - QG O > C=3 0


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PDF GT20G101 TcS70Â
Not Available

Abstract: No abstract text available
Text: GT20G101 STROBE FLASH APPLICATIONS . High Input Impedance . Enhancement-Mode . 20V Gate Drive SILICON N CHANNEL MOS TYPE Unit in mm 10.3MAX - Low Saturation Voltage : VcE(sat)=8V(Itax. ) (Ic=130A) 1.6 MAX 0.76 MAXIMUM RATINGS (Ta-25°C) SYMBOL VcES Vf.ES DC 1ms Collector Power Dissipât ion Junction Temperature Storage Temperature Range Ta=25°C Tc=25°C ic ICP PC Pc Tj Tstg RATING 400 ±25 20 130 1.3 60 150 , VOLTAGE VCE ( V ) GATE-EMITTER VOLTAGE VQE V CE( sat ) GT20G101 (V ) PE A K CO LLECTO R


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PDF GT20G101 Ta-25
GT30J322

Abstract: MP6750 MG200Q2YS40 MG75J2YS50 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: 40 (A) GT30J301 GT30J311 25 GT25G101 GT25G102 20 GT20D101 GT20D201 15 GT20G101 , 30 TO-220 (NIS) GT20G101 /(SM) 400 V/130 A 8 20 V/130 A 60 TO-220 (FL)/(SM , GT20G101 GT25G101 GT40G121 GT20G101 (SM) GT25G101 (SM) 400 GT5G102 GT20G102 GT25G102


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PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Not Available

Abstract: No abstract text available
Text: TOSHIBA T O S H IB A IN S U L A T E D G A T E B IP O L A R T R A N S IS T O R S IL IC O N N - C H A N N E L IG B T GT20G101 G T 2 0 G 1 01 S T R O B E F LA SH A P P L IC A T IO N S U n it in mm · · · · H igh In p u t Impedance Low S a tu ratio n Voltage : V q e (s a t) = 8V (M ax.) (I c = 130A ) E nhanceraent-M ode 20V Gate Drive R A T IN G S (T a = 2 5 ° C ) M A X IM U M , h a n g e w it h o u t n o tic e. 202 TOSHIBA GT20G101 IC - VCE (A l VCE - Vq e


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PDF GT20G101
2000 - GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: GT5G102 GT20G102 GT10G101 GT20G101 Product Number Format Table 1 (Example) GT 60 M 3 03 A , 20V / 130 A 30 TO-220(NIS) GT20G101 400V / 130 A 8 20V / 130 A 60 TO


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PDF
S5J53

Abstract: S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
Text: GT10G101 GT20G101 GT15G101 GT25G101 · 12-V G ate Bias Series Product No. VCES/ICP 400 V / 130 A 400


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PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 S5J25 200J2 MIG30J103H mg7502ys MIG30J103HB GT60M301 MP6753 MIG100Q201 GT10Q311
GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: GT8G121 GT10G101 GT10G102 GT15G101 GT20G101 GT20G102 GT25G101 GT25G102 GT50G101 GT50G102


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PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 T15J103 02SC5030 Driver IC 2SC3346
Text: . GT5G101 GT5G101 (LB) GT8G101 GT10G101 GT10G102 GT15G101 GT20G101 GT20G102 GT20G101 (SM) GT20G102 (SM


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PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 T15J103 02SC5030 Driver IC 2SC3346
s5j53

Abstract: S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
Text: GT15G101 GT20G101 GT20G102 GT50G101 GT50G102 GT75G101 60 60 60 60 60 60 60 80 IH IH TO


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PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F S5783 GT30J322 GT50j101 Electronic IH rice cooker MG30T1AL1 igbt induction cooker mosfet 500V 50A MG60M1AL1
GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
Text: GT15G101 GT20G101 GT20G102 GT25G102 GT50G101 GT50G102 GT75G101 GT20D101 GT20D201 400 400 400


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PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT45F12 GT30*122 MG60M1AL1 gt30f DC regulator with IGBT GT60M303 GT60M301
GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: GT10G101 GT10G102 GT15G101 GT20G101 GT20G102 GT25G101 GT25G102 GT50G101 GT50G102 GT75G101


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PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: -220FL TO-220FL TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(L) TO-3P(L) GT10G101 GT10G102 GT15G101 GT20G101


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PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: GT8G101 GT8G102 GT8G103 GT8G121 GT10G101 GT10G102 GT15G101 GT20G101 GT20G102 GT25G101 GT25G102


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PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
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