The Datasheet Archive

GT20D101 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
GT20D101 GT20D101 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
GT20D101 GT20D101 ECAD Model Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Scan PDF
GT20D101 GT20D101 ECAD Model Toshiba N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) Scan PDF
GT20D101O GT20D101O ECAD Model Toshiba Silicon N-Channel IGBT - High Power Amplifier Apps Scan PDF
GT20D101Y GT20D101Y ECAD Model Toshiba Silicon N-Channel IGBT - High Power Amplifier Apps Scan PDF

GT20D101 Datasheets Context Search

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toshiba gt20d101

Abstract: GT20D101 GT20D201
Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE GT20D101 HIGH POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vç;Eg = 250V (Min.) • High Forward , 10V, IE = 0 f= 1MHz — 65 — pF 1 2001-05-24 TOSHIBA GT20D101 IC - VCE IC - VGE r r 4.5 , ) 2 2001-05-24 TOSHIBA GT20D101 SAFE OPERATING AREA * SINGLE NONREPETITIVE PULSE Ta = 25 , VOLTAGE VQE (V) 3 2001-05-24 TOSHIBA GT20D101 RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA is


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PDF GT20D101 GT20D201 toshiba gt20d101 GT20D101 GT20D201
Toshiba gt20d101

Abstract: GT20D101 GT20D201
Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE GT20D101 HIGH POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VceS =250V (Min-) • High Forward Transfer Admittance : |Yfe| = 10S (Typ.) • Complementary to GT20D201 • Enhancement-Mode MAXIMUM , . 1997-08-22 1/3 TOSHIBA GT20D101 IC - VCE ic - VGE 20 16 12 5.5 £ A common emitter tc = 25 , contained herein is subject to change without notice. 1997-08-22 2/3 TOSHIBA GT20D101 SAFE OPERATING


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PDF GT20D101 GT20D201 961001EAA2' Toshiba gt20d101 GT20D101 GT20D201
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20D101 G T 2 0 D 1 01 HIGH POWER AMPLIFIER APPLICATION Unit in mm · · · · High Breakdown Voltage : VCES~ 250V (Min.) High Forward Transfer Admittance : |Yfe|= 10S(Typ.) Complementary to GT20D201 , < GT20D101 TO SH IBA GT20D101 SAFE OPERATING AREA 100 < o 300 COLLECTOR-EMITTER VOLTAGE V q e (V) 3 2002 - 02-06 TO SH IBA GT20D101 RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF GT20D101 GT20D201
GT200101

Abstract: GT20D101 GT20D201 toshiba gt20d101 TOS-M
Text: 45E D m 1CH755G 0017340 T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TOSM SILICON N CHANNEL TYPE TOSHIBA (DISCRETE/OPTO) GT20D101 I HIGH POWER AMPLIFIER APPLICATION . High Breakdown Voltage . High Forward Transfer Admittance . Complementary to GT20D201 . Enhancement-Mode VCES = 250V , /OPTO) T-39-31 - GT20D101 Ic - VCE ic - VGE 12 E 4.5 common emitter tc - 25"c 4.0 vge=30v 4 8 , GT20D101 SAFE OPERATING AREA 3 10 30 lOO 300 collector-emitter voltage vce (v) - 111 - This Material


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PDF 1CH755G GT20D101 GT20D201 T-39-31 GT200101 GT20D101 GT20D201 toshiba gt20d101 TOS-M
toshiba gt20d101

Abstract: No abstract text available
Text: SEMICONDUCTOR TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TOSHIBA ( GT20D101 ) G T 2 0 D 1 01 SILICON N CHANNEL TYPE TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. Unit in mm 20.5MAX 03.3±O .2 · · · · High Breakdown Voltage : VCES -250V (Min.) High Forward Transfer Admittance , such equ ipm en t or ap plications w ith o u t prior consultation w ith T O SH IBA. GT20D101 -1 , ) SEMICONDUCTOR TOSHIBA ( GT20D101 ) G T 2 0 D 1 01 TECHNICAL DATA SAFE OPERATING AREA GT20D101 -


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PDF GT20D101) --250V GT20D201 GT20D101 toshiba gt20d101
transistor d 4515

Abstract: Transistor 4515 2-21F1C GT20D101
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage : Vc e s =250V (MIN.) 20.5MAX ¿3.3 ¿0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode 2 . 5 +2 . 5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) 5.45±0.15 5 . 45±0.15 CHARACTERISTIC , > GT20D101 GT20D101 SAFE OPERATING AREA 100 : iL m a x . E:E=EE:EE: E 50 - Ic MAX.(PULSED


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PDF GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101
TOSH18A

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE GT20D101 G T 2 0 D 1 01 HIGH POWER AM PLIFIER APPLICATION · · · · H igh Breakdown Voltage : V cE S -250V (Min.; H igh Forward Transfer Adm ittance : |Yfe|= 10S(Typ.) Complementary to GT20D201 Enhancement-Mode , iconductor R elia b ility H andbook. 196 TOSHIBA GT20D101 1C - VCE ¡C - Vg e G A T E -E , 197 TOSHIBA GT20D101 SAFE OPERATING AREA COLLECTOR CURRENT Iq (A) 3 10 30


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PDF GT20D101 --250V GT20D201 TOSH18A
Not Available

Abstract: No abstract text available
Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE G T 2 0 D 1 01 Unit in mm HIGH PO W ER AM PLIFIER APPLICATION 03.3±O .2 2 0.5M A X • • • • High Breakdown Voltage : VCES~ 250V (Min.) High Forward Transfer Admittance : |Yfe | = , GT20D101 IC - VCE IC - Vge < < C Ü H z E-1 I Ü s °3 P4 D O PS o H , to change w ith o u t notice. 1997 08-22 - 2/3 TOSHIBA GT20D101 SA FE OPERATING A R


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PDF GT20D101 GT20D201
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE GT20D101 G T 2 0 D 1 01 HIGH POWER AMPLIFIER APPLICATION 2 0.5M A X Unit in mm 0d.S±O.2 · · · · High Breakdown Voltage High Forward Transfer Admittance Complementary to GT20D201 Enhancement-Mode : V C E S , Handbook. 1997 08-22 - 1/3 TOSHIBA GT20D101 IC - VCE < C IC - Vg e < Ü E-1 H z , is subject to change w ith o u t notice. # 1997 08-22 - 2/3 TOSHIBA GT20D101 SA


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PDF GT20D101 GT20D201
Not Available

Abstract: No abstract text available
Text: 45E D ■TDT7E50 0017fl4fl I T OSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N C H A N N EL T Y P E TOSHIBA T (DISCRETE/OPTO) HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 03 : V c e s =250V (MIN.) 3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 :=m| _ ïfs , – TCHTSSO TOSHIBA 100 DD17ASD 8 «T0S4 - GT20D101 (DISCRETE/OPTO) SA FE O PER A T IN G


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PDF TDT7E50 0017fl4fl GT20D101 GT20D201 DD17ASD
GT20D101

Abstract: No abstract text available
Text: GT20D101 HIGH POWER AMPLIFIER APPLICATION . High Breakdown Voltage SILICON N CHANNEL IGBT Unit in mm : Vc£g=250V (MIN.) 20 5 MAX # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5 3.0 +2.5 1.0 -0.25 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Cate-Emitter Voltage Collector Current Latch Up , ) $ a w < a H ro GT20D101 SAFE OPERATING AREA COLLECTOR CURRENT COLL EC TO R -E


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PDF GT20D101 GT20D201 100mA GT20D101
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL TYPE f i u n GT20D101 ' W mmr r n m w m HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX Unit in mm 0 3 .3 ± O .2 · · · · High Breakdown Voltage : V c e £>= 250V (Min.) High Forward Transfer , Reliability Handbook. 1997 08-22 1/3 - TOSHIBA GT20D101 le - VCE ic - vge 0 , herein is subject to change w ith o u t notice. 1997 08-22 2/3 - TOSHIBA GT20D101 SAFE


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PDF GT20D101 GT20D201 F001EAA2'
GT20D101

Abstract: No abstract text available
Text: 45E D m 10T755G 0017340 T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TOSM SILICON N CHANNEL TYPE TOSHIBA (DISCRETE/OPTO ) GT20D101 I HIGH POWER AMPLI FI ER APPLICATION . High Breakdown Voltage . High Forward Transfer Admittance . Compiementary to GT20D201 . Enhancement-Mode VCES = 250V (MIN.) j Yfe I =10S (TYP.) MAXIMUM RATINGS (Ta=25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter , 45E D ■10^7250 0G17Ö41 1 «TOSM TOSHIBA (DISCRETE/OPTO) T-39-31 - GT20D101 Ic - VCE ic - VGE 12 E


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PDF 10T755G GT20D101 GT20D201 T-39-31 --GT20D101
Not Available

Abstract: No abstract text available
Text: 45E D ■T0T72SG 0017ÔS1 T ■T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA ( DISCRETE/OPTO) HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.) . Complementary to GT20D101 . Enhancement-Mode +2 5 10-025 MAXIMUM RATINGS (Ta=25°C) 5.4 5 ± 0 1 5 SYMBOL CHARACTERISTIC Collector-Emitter Voltage RATING UNIT


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PDF T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201
2sk1529

Abstract: 2sk405 2sj115 2sc3281 YTFP450 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405 YTFP150
Text: TRANSISTORS Type No. N-CHANNEL 2SK405 2SK1529 2SK1530 GT20D101 P-CHANNEL 2SJ115 2SJ200 2SJ201 GT20D201 VCE S


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PDF YTFP150 YTFP151 YTFP152 YTFP153 YTFP250 YTFP251 YTFP252 YTFP253 YTFP450 YTFP451 2sk1529 2sk405 2sj115 2sc3281 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405
2N3904

Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
Text: . 103 2SK1530 . 106 GT20D101


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PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150
gt20d201

Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE P T ^ n n ^ fM GT20D201 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage : VcES=~250V (MIN.) . High Forward Transfer Admittance : | Y f e | =10S (TYP.) . Complementary to GT20D101 . Enhancement-Mode ) < 2.5 3.0 + 2.5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Latch Up Current Collector Power Dissipation (Tc=25°C) Junction


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PDF GT20D201 GT20D101 gt20d201
IGBT gt20d201

Abstract: No abstract text available
Text: SILICON N CHANNEL IGBT GT20D201 Unit in mm 20.5M A X ¿ 3 .3 ± 0 .2 HIGH POWER AMPLIFIER APPLICATION . High Breakdown Voltage . High Forward Transfer Admittance . Complementary to GT20D101 . Enhancement-Mode VCES=-250V (MIN.) I Yfe I =10S (TYP.) 2.5 3.0 + 2.5 1.0-0.25 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Latch Up Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCES VGES ic IL PC Tj Tstg RATING


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PDF GT20D201 GT20D101 -250V -250V, -100yA, -100mA IGBT gt20d201
T20D201

Abstract: gt20d201
Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor Silicon P Channel MOS Type High Power Amplifier Application Features U nit in m m · High Breakdown Voltage - VCES = -250V (Min) · High Forward Transfer Admittance - Yfs' = 10S (Typ.) · Complementary to GT20D101 · Enhancement-Mode A bsolute M axim um Ratings (Ta = 25 C) CHARACTERISTIC C ollector-E m itter Voltage G ate-Em ltter Voltage C ollector Current Latch Up Current C ollector Power D issipation (Tc = 25CC) J u nction Temperature Storage Temperature


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PDF GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201
G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 (SM) GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101 GT25G101 (SM) GT25G102 GT25G102 (SM) GT25J101 GT25Q101 GT25Q301 GT30J301 GT30J311 GT40M101 GT40M301 GT40T101 GT5G101 GT5G103 GT50J102 GT50J301 GT60M104 GT60M301 GT60M302 GT8G101 GT8J101 GT8J102 (SM) GT8Q101 GT8Q102 (SM) GT80J101 Page 163 166


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PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 G75Q1BS11 gt15j103 GT60M301 MG25Q6ES50A mg150q1js MP6753 TOSHIBA MG300J2YS50
GT20D201

Abstract: toshiba gt20d201 GT20 GT20D101
Text: TOSHIBA GT20D201 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE GT20D201 HIGH POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VGEs = -250V (Min.) • High Forward Transfer Admittance : |Yfe| = 10S (Typ.) • Complementary to GT20D101 • Enhancement-Mode MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES -250 V Gate-Emitter Voltage VGES ±20 V Collector Current ic -20 A Latch Up Current iL -60 A Collector Power


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PDF GT20D201 -250V GT20D101 961001EAA2' GT20D201 toshiba gt20d201 GT20 GT20D101
GT20D201

Abstract: GT20D101 10S0V
Text: TOSHIBA GT20D101 insulated Gate Bipolar Transistor Silicon N Channel MOS Type High Power Amplifier Application Features · High Breakdown Voltage - v c e s = 2 5 0 V (M in ) Unit in mm · High Forward Transfer Admittance - Yfs = 10S0VP-) · Complementary to GT20D201 · Enhancement-Mode Absolute Maximum Ratings fTa = 25°C) CHARACTERISTIC C o lle cto r-E m itle r Voltage G a le-E m itter Voltage C o lle cto r C urrent Latch Up C urrent C o lle cto r Power D issip a tio n (Tc = 2 5 °C ) Ju n


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PDF GT20D101 10S0VP-) GT20D201 GT20D201 GT20D101 10S0V
toshiba gt20d201

Abstract: GT20D201
Text: SEMICONDUCTOR TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TOSHIBA (GT20D201) GT20D201 SILICON P CHANNEL TYPE TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. Unit in mm · · · · High Breakdown Voltage : VGEg = -250V (MIN.) High Forward Transfer Admittance : |Yfe| = 10S (TYP.) Complementary to GT20D101 Enhancement-Mode CHARACTERISTIC Colleetor-Emitter Voltage Gate-Emitter Voltage Collector Current Latch Up Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage


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PDF GT20D201) GT20D201 --250V GT20D101 GT20D201 toshiba gt20d201
Toshiba gt20d101

Abstract: No abstract text available
Text: 45E D ■=10^7250 OOlTfiSl T ■TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TOSM SILICON P CHANNEL TYPE TOSHIBA (DISCRETE/OPTO) HIGH POWER AMPLI FIER APPLICATION . High Breakdown Voltage . High Forward Transfer Adnittance . Complementary to GT20D101 . Enhancement-Mode VCES=-250V (MIN.) | Yfe | =10S (TYP.) MAXIMUM RATINGS (Ta=25°C) - GT20D201 T-3VM Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES -250 V Gate-Emitter Voltage VGES ±20 V Collector Current ic -20 A Latch Up Current IL -60 A


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PDF GT20D101 -250V GT20D201 T-39-31 Toshiba gt20d101
GT20D101

Abstract: GT20D201 pc180
Text: 45E D ■TDT72S0 0017AS1 T ■TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TOSM SILICON P CHANNEL TYPE TOSHIBA (DISCRETE/OPTO) HIGH POWER AMPLIFIER APPLICATION . High Breakdown Voltage . High Forward Transfer Adnittance . Complementary to GT20D101 . Enhancement-Mode VCES=-250V (MIN.) I Yfe I =10S (TYP.) MAXIMUM RATINGS (Ta=25°C) - GT20D201 T-3VM Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES -250 V Gate-Emitter Voltage VGES ±20 V Collector Current ic -20 A Latch Up


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PDF TDT72S0 0017AS1 GT20D101 -250V GT20D201 T-39-31 GT20D101 GT20D201 pc180
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