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2001 - thermal compound wps II

Abstract: PHILIPS TANTALIUM
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGF844 GSM800 EDGE power module Preliminary specification 2002 Oct 25 Philips Semiconductors Preliminary specification GSM800 EDGE power module , specification GSM800 EDGE power module LIMITING VALUES In accordance with the Absolute Maximum Rating System , Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 30.2 GP 30 , 4 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844


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PDF BGF844 GSM800 SCA73 613524/04/pp12 thermal compound wps II PHILIPS TANTALIUM
2005 - K745

Abstract: capacitor shc P743
Text: TQD714022 Preliminary Data Sheet GSM800 /900 Power Amplifier Die Functional Block Diagram DC V , 16 TQD714022 Preliminary Data Sheet GSM800 /900 Power Amplifier Die GENERAL PRODUCT , designed for use in GSM handsets operating in the GSM800 and GSM 900 frequency bands. The GLC is 4 mils , , February 2, 2005 2 of 16 TQD714022 Preliminary Data Sheet GSM800 /900 Power Amplifier Die WAFER , : www.triquint.com Revision A, February 2, 2005 3 of 16 TQD714022 Preliminary Data Sheet GSM800 /900 Power


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PDF TQD714022 GSM800/900 TQD714022 TQM7M4022 K745 capacitor shc P743
2011 - safel881

Abstract: murata SAW
Text: FILTER FOR GSM800 Rx Murata part number : SAFEL881MFL0F00 Package Dimensions Top View 1.35±0.05 (6 , , 2010 1/5 SAW FILTER FOR GSM800 Rx Murata part number : SAFEL881MFL0F00 Frequency Performance Amplitude balance Phase balance Jan. 05, 2010 2/5 SAW FILTER FOR GSM800 Rx Murata part number , FILTER FOR GSM800 Rx Murata part number : SAFEL881MFL0F00 Recommended Land Pattern 0.25 0.25 0.325 , FILTER FOR GSM800 Rx Murata part number : SAFEL881MFL0F00 RoHS Compliance This component is compliant


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PDF GSM800 SAFEL881MFL0F00 894MHz) safel881 murata SAW
2006 - GSM800

Abstract: SAWEN881MCN0F00R14 murata SAW
Text: SAW FILTER FOR GSM800 /GSM900 (Rx) Murata part number : SAWEN881MCN0F00 (fc=881.5MHz) Package , . 180±5deg. max. ±0.2dB 180±2.5deg. 50 150 //82nH 1/6 SAW FILTER FOR GSM800 /GSM900 (Rx , 900 910 920 930 frequency(MHz) 2/6 SAW FILTER FOR GSM800 /GSM900 (Rx) Murata part , . 180±5deg. max. ±0.2dB 180±2deg. 50 150 //82nH 3/6 SAW FILTER FOR GSM800 /GSM900 (Rx , 960 970 980 990 frequency(MHz) 4/6 SAW FILTER FOR GSM800 /GSM900 (Rx) 9S 9S


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PDF GSM800/GSM900 SAWEN881MCN0F00 894MHz) 800MHz 900MHz GSM800 SAWEN881MCN0F00R14 murata SAW
2001 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification GSM800 EDGE power module , Semiconductors Preliminary specification GSM800 EDGE power module CHARACTERISTICS Tmb = 25 °C; VS = 26 V , GSM800 EDGE power module MOUNTING RECOMMENDATIONS BGF844 To ensure a good thermal contact and to , electrostatic damage. 2001 Sep 25 4 Philips Semiconductors Preliminary specification GSM800 EDGE


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PDF M3D737 BGF844 GSM800 OT365C BGF844 MBL257 SCA73
2001 - MBL257

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification GSM800 EDGE power module , Semiconductors Preliminary specification GSM800 EDGE power module CHARACTERISTICS Tmb = 25 °C; VS = 26 V , GSM800 EDGE power module MOUNTING RECOMMENDATIONS BGF844 To ensure a good thermal contact and to , electrostatic damage. 2002 Jan 03 4 Philips Semiconductors Preliminary specification GSM800 EDGE


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PDF M3D737 BGF844 GSM800 OT365C BGF844 MBL257 SCA73 MBL257
2001 - BGF844

Abstract: SR200 SR400 SR600
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGF844 GSM800 EDGE power module Preliminary specification 2002 Mar 28 Philips Semiconductors Preliminary specification GSM800 EDGE power module , Preliminary specification GSM800 EDGE power module BGF844 CHARACTERISTICS Tmb = 25 °C; VS = 26 V; PL , Preliminary specification GSM800 EDGE power module BGF844 MOUNTING RECOMMENDATIONS To ensure a good , Preliminary specification GSM800 EDGE power module BGF844 PACKAGE OUTLINE 1 2002 Mar 28 2


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PDF BGF844 GSM800 OT365C BGF844 OT365C SCA73 613524/04/pp7 SR200 SR400 SR600
2003 - BGF844

Abstract: SR200 SR400 SR600 smd INCOMING INSPECTION procedure
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product , GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C · Typical GSM EDGE performance at , Product specification GSM800 EDGE power module BGF844 LIMITING VALUES In accordance with the , . 2003 Feb 26 3 Philips Semiconductors Product specification GSM800 EDGE power module , GSM800 EDGE power module BGF844 MBL776 30.4 Gp (dB) 30 handbook, halfpage (%


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PDF M3D737 BGF844 GSM800 OT365C SCA75 613524/06/pp12 BGF844 SR200 SR400 SR600 smd INCOMING INSPECTION procedure
2003 - thermal compound wps II

Abstract: austerlitz BGF844 SR200 SR400 SR600
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product , GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C · Typical GSM EDGE performance at , Product specification GSM800 EDGE power module BGF844 LIMITING VALUES In accordance with the , . 2003 Jun 06 3 Philips Semiconductors Product specification GSM800 EDGE power module , GSM800 EDGE power module BGF844 MBL776 30.4 Gp (dB) 30 handbook, halfpage (%


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PDF M3D737 BGF844 GSM800 OT365C SCA75 613524/07/pp12 thermal compound wps II austerlitz BGF844 SR200 SR400 SR600
2010 - GSM800

Abstract: SAW FILTER 881.5MHZ safel881 murata SAW
Text: SAW FILTER FOR GSM800 Rx Murata part number : SAFEL881MFL0F00 Package Dimensions Specification Item Nominal Center Frequency(fc) 1.05±0.05 Specification -30 to 85°C 25±2°C 881.5MHz 1.9dB max , , 2010 Ver. 2 1/4 SAW FILTER FOR GSM800 Rx Murata part number : SAFEL881MFL0F00 Frequency Performance Amplitude balance Phase balance Jan. 05, 2010 Ver. 2 2/4 SAW FILTER FOR GSM800 Rx , 4000pcs/reel SAFEL881MFL0F00R12 . 2000pcs/reel Jan. 05, 2010 Ver. 2 3/4 SAW FILTER FOR GSM800 Rx


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PDF GSM800 SAFEL881MFL0F00 894MHz) SAW FILTER 881.5MHZ safel881 murata SAW
2001 - sr600

Abstract: GSM800
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Preliminary specification 2001 Nov 06 Philips Semiconductors Preliminary specification GSM800 EDGE power module , Semiconductors Preliminary specification GSM800 EDGE power module CHARACTERISTICS Tmb = 25 °C; VS = 26 V , dBc % % 2001 Nov 06 3 Philips Semiconductors Preliminary specification GSM800 EDGE , 4 Philips Semiconductors Preliminary specification GSM800 EDGE power module PACKAGE


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PDF M3D737 BGF844 GSM800 OT365C BGF844 MBL257 SCA73 sr600
2002 - 2 LOIF

Abstract: CMAC cm2002 c-mac CMAC frequency c.mac
Text: CM2002-800 Preliminary Specification PRELIMINARY SPECIFICATION CM2002-800 High Linearity MOSFET Quad Mixer For GSM800 and Cellular BTS Features · · · · · Integrated, Single-ended RF & LO Interfaces High linearity: IIP3 >+ 30 dBm, 820 - 920 MHz (+17 dBm LO) Low-conversion loss: 7dB (+17 dBm LO , Description The CM2002-800 is a high linearity, passive MOSFET Quad Mixer for GSM800 and Cellular Base Station , CM2002-800 is optimized for frequency down conversion using low-side LO injection for GSM800 and Cellular


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PDF CM2002-800 CM2002-800 GSM800 2 LOIF CMAC cm2002 c-mac CMAC frequency c.mac
2002 - CMAC

Abstract: No abstract text available
Text: PRELIMINARY SPECIFICATION CM2002-800 Product Description The CM2002-800 is a high linearity, passive MOSFET Quad Mixer for GSM800 and Cellular Base Station Receivers, exhibiting high dynamic range performance over an LO drive range of +14 dBm to +20 dBm. The CM2002-800 is optimized for frequency down conversion using low-side LO injection for GSM800 and Cellular Base Station applications. Figure 1. Functional Schematic Diagram · · · · High Linearity MOSFET Quad Mixer For GSM800 and Cellular BTS Features ·


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PDF CM2002-800 CM2002-800 GSM800 CMAC
2001 - bts 2140 1b data sheet

Abstract: RFIC RF Identification Devices bts 2140 ETC1-1-13 PE4125 PE4125-EK
Text: ADVANCE INFORMATION PE4125 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Product Description The PE4125 is a high linearity, passive MOSFET Quad Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over an LO drive range of 14 dBm to 20 dBm. This mixer integrates passive matching networks to provide single ended interfaces for the RF and LO , frequency down conversion using high-side LO injection for GSM800 & Cellular Base Station applications


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PDF PE4125 GSM800 PE4125 bts 2140 1b data sheet RFIC RF Identification Devices bts 2140 ETC1-1-13 PE4125-EK
2001 - bts 2140 1b data sheet

Abstract: RFIC RF Identification Devices bts 2140 bts 2140 1b ETC1-1-13 PE4124 PE4124-EK peregrine rfic marking 162
Text: ADVANCE INFORMATION PE4124 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Product Description The PE4124 is a high linearity, passive MOSFET Quad Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over an LO drive range of 14 dBm to 20 dBm. This mixer integrates passive matching networks to provide single ended interfaces for the RF and LO , frequency down conversion using low-side LO injection for GSM800 & Cellular Base Station applications


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PDF PE4124 GSM800 PE4124 bts 2140 1b data sheet RFIC RF Identification Devices bts 2140 bts 2140 1b ETC1-1-13 PE4124-EK peregrine rfic marking 162
2014 - COAXIAL CABLE 5D

Abstract: No abstract text available
Text: 1.10 1.10 1.15 1.15 GSM800 /900 818 − 960 1.15 1.15 1.15 1.15 1.15 , GSM800 FOUR BAND 818 − 960, 1429 − 1513, 1710 − 1910, 1920 − 2170 1∼11 , 1.15 1.15 GSM800 818 − 960 1.15 1.15 1.15 1.15 1.15 PDC 1429 â , GSM800 818 − 960, 1429 − 1513, 1710 − 1910, 1920 − 2170 FOUR BAND 1∼9 , 1.10 1.10 1.10 1.15 470 − 960 1.10 1.10 1.10 1.15 1.15 GSM800 818


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PDF H1-p31 KT302D COAXIAL CABLE 5D
2002 - bts 2140 1b data sheet

Abstract: mosfet 408C RFIC RF Identification Devices 858C ETC1-1-13 PE4125 PE4125-EK peregrine 408C
Text: PRELIMINARY SPECIFICATION PE4125 High Linearity Quad MOSFET Mixer For GSM800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO , frequency down-conversion using high-side LO injection for GSM800 & Cellular Base Station applications


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PDF PE4125 GSM800 PE4125 bts 2140 1b data sheet mosfet 408C RFIC RF Identification Devices 858C ETC1-1-13 PE4125-EK peregrine 408C
2002 - PE4124

Abstract: PE4124-EK 858C ETC1-1-13 IF70MHz
Text: PRODUCT SPECIFICATION PE4124 High Linearity Quad MOSFET Mixer For GSM800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO , frequency down-conversion using low-side LO injection for GSM800 & Cellular Base Station applications, and


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PDF PE4124 GSM800 PE4124 PE4124-EK 858C ETC1-1-13 IF70MHz
2003 - ETC1-1-13

Abstract: PE4124 PE4124-EK Transformer tee
Text: PRODUCT SPECIFICATION PE4124 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO , frequency down-conversion using low-side LO injection for GSM800 & Cellular Base Station applications, and


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PDF PE4124 GSM800 PE4124 ETC1-1-13 PE4124-EK Transformer tee
455 mhz if transformer

Abstract: PE4124 PE4124-EK
Text: Advance Information PE4124 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Features · Integrated, Single Ended RF & LO Interfaces · High linearity: IIP3 >+30 dBm, 820 ­ 920 MHz (+17 dBm LO) · Low conversion loss: 8 dB (+17 dBm LO) · High Isolation: Typical LO-IF at 38 dB Typical LO-RF at 38 dB · Designed for Low-Side LO Injection Product Description Package Drawings The PE4124 is a high linearity, passive MOSFET Quad Mixer for GSM800 &Cellular Base Station Receivers


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PDF PE4124 GSM800 PE4124 455 mhz if transformer PE4124-EK
2003 - RFIC RF Identification Devices

Abstract: ETC1-1-13 PE4125 PE4125-EK
Text: PRODUCT SPECIFICATION PE4125 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO , frequency down-conversion using high-side LO injection for GSM800 & Cellular Base Station applications


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PDF PE4125 GSM800 PE4125 RFIC RF Identification Devices ETC1-1-13 PE4125-EK
2002 - bts 2140

Abstract: ETC1-1-13 858C PE4135 ETK1-1-13 4135-01
Text: PRELIMINARY SPECIFICATION PE4135 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4135 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO , frequency down-conversion using low-side LO injection for GSM800 & Cellular Base Station application, and


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PDF PE4135 GSM800 PE4135 bts 2140 ETC1-1-13 858C ETK1-1-13 4135-01
2003 - mrf 861

Abstract: ETC1-1-13 PE4135 RF POWER MOSFET
Text: PRODUCT SPECIFICATION PE4135 High Linearity Quad MOSFET Mixer for GSM800 & Cellular BTS Product Description The PE4135 is a high linearity, passive Quad MOSFET Mixer for GSM800 & Cellular Base Station Receivers, exhibiting high dynamic range performance over a broad LO drive range of up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO , frequency down-conversion using low-side LO injection for GSM800 & Cellular Base Station application, and


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PDF PE4135 GSM800 PE4135 mrf 861 ETC1-1-13 RF POWER MOSFET
455 mhz if transformer

Abstract: PE4125 PE4125-EK
Text: Advance Information PE4125 High Linearity MOSFET Quad Mixer For GSM800 & Cellular BTS Features · Integrated, Single Ended RF & LO Interfaces · High linearity: IIP3 >+30 dBm, 820 ­ 920 MHz (+17 dBm LO · Low conversion loss: 8 dB (+17 dBm LO) · High Isolation: Typical LO-IF at 38 dB Typical LO-RF at 38 dB · Designed for High-Side LO Injection Product Description Package Drawings The PE4125 is a high linearity, passive MOSFET Quad Mixer for GSM800 & Cellular Base Station


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PDF PE4125 GSM800 PE4125 455 mhz if transformer PE4125-EK
2003 - 50w LF amplifier

Abstract: No abstract text available
Text: routing has been sized to present a 50W impedance. DCS/PCS RFIN DCS/PCS RFOUT GSM800 /GSM900 RFIN GSM800 /GSM900 RFOUT Figure 6: AWT6146 Evaluation Board 18 VCC2 17 GND DCS/PCS RF INPUT 1 DCS


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PDF GSM850/GSM900/DCS/PCS AWT6146 50w LF amplifier
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